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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Atomically layer-by-layer diffusion of oxygen/hydrogen in highly epitaxial PrBaCo{sub 2}O{sub 5.5+δ} thin films

Single-crystalline epitaxial thin films of PrBaCo{sub 2}O{sub 5.5+δ} (PrBCO) were prepared, and their resistance R(t) under a switching flow of oxidizing and reducing gases were measured as a function of the gas flow time t in the temperature range of 200–800 °C. During the oxidation cycle under O{sub 2}, the PrBCO films exhibit fast oscillations in their dR(t)/dt vs. t plots, which reflect the oxidation processes, Co{sup 2+}/Co{sup 3+} → Co{sup 3+} and Co{sup 3+} → Co{sup 3+}/Co{sup 4+}, that the Co atoms of PrBCO undergo. Each oscillation consists of two peaks, with larger and smaller peaks representing the oxygen/hydrogen diffusion through the (BaO)(CoO{sub 2})(PrO)(CoO{sub 2}) layers of PrBCO via the oxygen-vacancy-exchange mechanism. This finding paves a significant avenue for cathode materials operating in low-temperature solid-oxide-fuel-cell devices and for chemical sensors with wide range of operating temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Fabrication and characterization of p{sup +}-i-p{sup +} type organic thin film transistors with electrodes of highly doped polymer

Organic thin film transistors (OTFTs) have been explored because of their advantageous features such as light-weight, flexible, and large-area. For more practical application of organic electronic devices, it is very important to realize OTFTs that are composed only of organic materials. In this paper, we have fabricated p{sup +}-i-p{sup +} type of OTFTs in which an intrinsic (i) regioregular poly (3-hexylthiophene) (P3HT) layer is used as the active layer and highly doped p-type (p{sup +}) P3HT is used as the source and drain electrodes. The 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F{sub 4}-TCNQ) was used as the p-type dopant. A fabricating method of p{sup +}-i-p{sup +} OTFTs has been developed by using SiO{sub 2} and aluminum films as capping layers for micro-scaled patterning of the p{sup +}-P3HT electrodes. The characteristics of the OTFTs were examined using the photoelectron spectroscopy and electrical measurements. We demonstrated that the fabricated p{sup +}-i-p{sup +} OTFTs work with carrier injection through a built-in potential at p{sup +}/i interfaces. We found that the p{sup +}-i-p{sup +} OTFTs exhibit better FET characteristics than the conventional P3HT-OTFT with metal (Au) electrodes, indicating that the influence of a carrier injection barrier at the interface between the electrode and the active layer was suppressed by replacing the metal electrodes with p{sup +}-P3HT layers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

In-plane current-driven spin-orbit torque switching in perpendicularly magnetized films with enhanced thermal tolerance

Here, we study spin-orbit-torque (SOT)-driven magnetization switching in perpendicularly magnetized Ta/Mo/Co 40 Fe 40 B 20 (CoFeB)/MgO films. The thermal tolerance of the perpendicular magnetic anisotropy (PMA) is enhanced, and the films sustain the PMA at annealing temperatures of up to 430 C, due to the ultra-thin Mo layer inserted between the Ta and CoFeB layers. More importantly, the Mo insertion layer also allows for the transmission of the spin current generated in the Ta layer due to spin Hall effect, which generates a damping-like SOT and is able to switch the perpendicular magnetization. When the Ta layer is replaced by a Pt layer, i.e., in a Pt/Mo/CoFeB/MgO multilayer, the direction of the SOT-induced damping-like effective field becomes opposite because of the opposite sign of spin Hall angle in Pt, which indicates that the SOT-driven switching is dominated by the spin current generated in the Ta or Pt layer rather than the Mo layer. Quantitative characterization through harmonic measurements reveals that the large SOT effective field is preserved for high annealing temperatures. This work provides a route to applying SOT in devices requiring high temperature processing steps during the back-end-of-line processes.

42 ENGINEERING↗
DOE OSTI2016

Effect of annealing ambient on anisotropic retraction of film edges during solid-state dewetting of thin single crystal films

During solid-state dewetting of thin single crystal films, film edges retract at a rate that is strongly dependent on their crystallographic orientations. Edges with kinetically stable in-plane orientations remain straight as they retract, while those with other in-plane orientations develop in-plane facets as they retract. Kinetically stable edges have retraction rates that are lower than edges with other orientations and thus determine the shape of the natural holes that form during solid-state dewetting. In this paper, measurements of the retraction rates of kinetically stable edges for single crystal (110) and (100) Ni films on MgO are presented. Relative retraction rates of kinetically stable edges with different crystallographic orientations are observed to change under different annealing conditions, and this accordingly changes the initial shapes of growing holes. The surfaces of (110) and (100) films were also characterized using low energy electron diffraction, and different surface reconstructions were observed under different ambient conditions. The observed surface structures were found to correlate with the observed changes in the relative retraction rates of the kinetically stable edges.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Quasi-2D superconductivity in FeTe 0.55 Se 0.45 ultrathin film [Quasi Two-Dimensional Superconductivity in FeTe 0.55 Se 0.45 ultrathin film]

Iron-chalcogenide FeTe 0.55 Se 0.45 was found to be a promising topological superconducting candidate recently, which may host Majorana bound state in the vortex core and thus attracts intensive research interests in this material. In this report, mechanically exfoliated FeTe 0.55 Se 0.45 superconducting thin films close to the two-dimensional (2D) limit, i.e. sample thickness is on the order of coherence length, were studied systematically by means of electrical transport and point-contact Andreev-reflection spectroscopy (PCARS) measurements. The quasi-2D nature of FeTe 0.55 Se 0.45 thin films is evidenced by the observation of Berezinskii–Kosterlitz–Thouless (BKT) transition and anisotropic upper critical fields in the vicinity of superconducting transition. Compared to bulk samples, we found that the superconducting transition temperature is only slightly suppressed even for films down to 5 nm. The superconducting gap symmetry remains unchanged and the gap size is weakly affected by tailoring thickness. Furthermore, our findings suggest that the superconductivity of FeTe 0.55 Se 0.45 thin films is rather robust against reduced dimensions. It provides a novel platform for device applications for quantum computations in combination with possible realization of Majorana modes in this material.

2D superconductivity↗
DOE OSTI2017

Free Surface Relaxations of Star-Shaped Polymer Films

Here, the surface relaxation dynamics of supported star-shaped polymer thin films are shown to be slower than the bulk, persisting up to temperatures at least 50 degrees above the bulk glass transition temperature T$bulk\atop{g}$. This behavior, exhibited by star-shaped polystyrenes (SPSs) with functionality f = 8 arms and molecular weights per arm M arm < M e (M e is the entanglement molecular weight), is shown by molecular dynamics simulations to be associated with a preferential localization of these macromolecules at the free surface. This new phenomenon is in notable contrast to that of linear chain polymer thin film systems where the surface relaxations are enhanced in relation to the bulk; this enhancement persists only for a limited temperature range above the bulk T$bulk\atop{g}$. Finally, evidence of the slow surface dynamics, compared to the bulk, for temperatures well above T g and at length and time scales not associated with the glass transition has not previously been reported for polymers.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Formation of Pd nanocrystals in titanium-oxide film by rapid thermal annealing of reactively cosputtered TiPdO films

In this article, the authors report a novel method for preparation of Pd nanocrystals embedded in TiO{sub 2} film; i.e., the TiPdO films are first deposited by reactively cosputtering Ti and Pd targets in a plasma mixture of O{sub 2} and Ar, followed by rapid thermal annealing (RTA). The experimental results indicate that the TiPdO film with a high content of Pd is inclined to produce big nanocrystals. Furthermore, the higher the RTA temperature, the bigger the Pd nanocrystals become. In addition, our analyses of the x-ray photoelectron spectroscopy spectra reveal that PdO, PdO{sub 2}, Ti{sub 2}O{sub 3}, and TiO{sub 2} coexist in the as-deposited film, and the RTA at 600 deg. C leads to decomposition of the entire PdO{sub 2} and partial PdO, together with the growth of Pd nanocrystals. At the same time, the released oxygen oxidizes fully Ti{sub 2}O{sub 3} into TiO{sub 2} during the decomposition. As the RTA temperature is increased up to 900 deg. C, more and more PdO is decomposed and the Pd nanocrystals become bigger and bigger.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Novel hard, tough HfAlSiN multilayers, defined by alternating Si bond structure, deposited using modulated high-flux, low-energy ion irradiation of the growing film

Hf{sub 1−x−y}Al{sub x}Si{sub y}N (0 ≤ x ≤ 0.14, 0 ≤ y ≤ 0.12) single layer and multilayer films are grown on Si(001) at 250 °C using ultrahigh vacuum magnetically unbalanced reactive magnetron sputtering from a single Hf{sub 0.6}Al{sub 0.2}Si{sub 0.2} target in mixed 5%-N{sub 2}/Ar atmospheres at a total pressure of 20 mTorr (2.67 Pa). The composition and nanostructure of Hf{sub 1−x−y}Al{sub x}Si{sub y}N films are controlled by varying the energy E{sub i} of the ions incident at the film growth surface while maintaining the ion-to-metal flux ratio constant at eight. Switching E{sub i} between 10 and 40 eV allows the growth of Hf{sub 0.78}Al{sub 0.10}Si{sub 0.12}N/Hf{sub 0.78}Al{sub 0.14}Si{sub 0.08}N multilayers with similar layer compositions, but in which the Si bonding state changes from predominantly Si–Si/Si–Hf for films grown with E{sub i} = 10 eV, to primarily Si–N with E{sub i} = 40 eV. Multilayer hardness values, which vary inversely with bilayer period Λ, range from 20 GPa with Λ = 20 nm to 27 GPa with Λ = 2 nm, while fracture toughness increases directly with Λ. Multilayers with Λ = 10 nm combine relatively high hardness, H ∼ 24 GPa, with good fracture toughness.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Dependence of the surface morphology of ultrathin bismuth films on mica substrates on the film thickness

The results of studying the surface of 15- to 100-nm-thick bismuth films by atomic-force microscopy are reported. The near-linear character of the dependences of the average surface roughness and the average height of growth patterns on the film thickness is established. It is found that the average crystallite size increases, as the film thickness is increased. A slight dependence of the crystallite size on the film thickness is observed at thicknesses in the range of 27–70 nm.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Assessing the Thickness of Thin Films Based on Elemental Data Composition of Film Structures

Abstract—We demonstrate the possibility of a quantitative assessment of the thickness of thin films using to measurements of the cationic composition of film structures using the INCA Energy-350 energy dispersion spectrometer that is part of the JSM-6490 LV electron microscope (Japan). The use of this method is especially useful if it is impossible to provide sufficient contrast between the images of the film and substrate sections obtained with a scanning electron microscope on a transverse cleavage of the film structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Stiff and Transparent Multilayer Thin Films Prepared Through Hydrogen-Bonding Layer-by-Layer Assembly of Graphene and Polymer [Super Stiff and Highly Transparent Multilayer Thin Films Prepared through Hydrogen-Bonding Layer-by-Layer Assembly of Graphene and Polymer]

Due to their exceptional orientation of 2D nanofillers, layer–by–layer (LbL) assembled polymer/graphene oxide thin films exhibit unmatched mechanical performance relative to any conventionally produced counterparts with similar composition. Unprecedented mechanical property improvement, by replacing graphene oxide with pristine graphene, is demonstrated in this work. Polyvinylpyrrolidone–stabilized graphene platelets are alternately deposited with poly(acrylic acid) using hydrogen bonding assisted LbL assembly. Transmission electron microscopy imaging and the Halpin–Tsai model are used to demonstrate, for the first time, that intact graphene can be processed from water to generate polymer nanocomposite thin films with simultaneous parallel–alignment, high packing density, and exfoliation. A multilayer thin film with only 3.9 vol% of highly exfoliated, and structurally intact graphene, increases the elastic modulus (E) of a polymer multilayer thin film by 322% (from 1.41 to 4.81 GPa), while maintaining visible light transmittance of ≈90%. This is one of the greatest improvements in elastic modulus ever reported for a graphene–filled polymer nanocomposite with a glassy (E > 1 GPa) matrix. In conclusion, the technique described here provides a powerful new tool to improve nanocomposite properties (mechanical, gas transport, etc.) that can be universally applied to a variety of polymer matrices and 2D nanoplatelets.

36 MATERIALS SCIENCE↗
DOE OSTI2019

3D Conformal Printing and Photonic Sintering of High‐Performance Flexible Thermoelectric Films Using 2D Nanoplates

Abstract Flexible thermoelectric (TE) devices hold great promise for energy harvesting and cooling applications, with increasing significance to serve as perpetual power sources for flexible electronics and wearable devices. Despite unique and superior TE properties widely reported in nanocrystals, transforming these nanocrystals into flexible and functional forms remains a major challenge. Herein, demonstrated is a transformative 3D conformal aerosol jet printing and rapid photonic sintering process to print and sinter solution‐processed Bi 2 Te 2.7 Se 0.3 nanoplate inks onto virtually any flexible substrates. Within seconds of photonic sintering, the electrical conductivity of the printed film is dramatically improved from nonconductive to 2.7 × 10 4 S m −1 . The films demonstrate a room temperature power factor of 730 µW m −1 K −2 , which is among the highest values reported in flexible TE films. Additionally, the film shows negligible performance changes after 500 bending cycles. The highly scalable and low‐cost fabrication process paves the way for large‐scale manufacturing of flexible devices using a variety of high‐performing nanoparticle inks.

Saeidi‐Javash, Mortaza↗
DOE OSTI2018

Enhanced Cyclability of Lithium-Oxygen Batteries with Electrodes Protected by Surface Films Induced via In Situ Electrochemical Process

Although the rechargeable lithium-oxygen (Li-O2) batteries have extremely high theoretical specific energy, the practical application of these batteries is still limited by the instability of their carbon-based air-electrode, Li metal anode, and electrolytes towards reduced oxygen species. Here we demonstrate a simple one-step in-situ electrochemical pre-charging strategy to generate thin protective films on both carbon nanotubes (CNTs) air-electrode and Li metal anode simultaneously under an inert atmosphere. Li-O2 cells after such pre-treatment demonstrate significantly extended cycle life of 110 and 180 cycles under the capacity-limited protocol of 1000 mAh g-1 and 500 mAh g-1, respectively, which is far more than those without pre-treatment. The thin-films formed from decomposition of electrolyte during in-situ electrochemical pre-charging process in an inert environment can protect both CNTs air-electrode and Li metal anode prior to conventional Li-O2 discharge/charge cycling where reactive reduced oxygen species are formed. This work provides a new approach for protections of carbon-based air-electrode and Li metal anode in practical Li-O2 batteries, and may also be applied to other battery systems.

Environmental Molecular Sciences Laboratory↗
DOE OSTI2018

Obtaining a Low and Wide Atomic Layer Deposition Window (150-275 °C) for In 2 O 3 Films Using an In III Amidinate and H 2 O

Indium oxide is a major component of many technologically important thin films, most notably the transparent conductor indium tin oxide (ITO). Despite being pyrophoric, homoleptic indium(III) alkyls do not allow atomic layer deposition (ALD) of In 2 O 3 using water as a co-precursor at substrate temperatures below 200 °C. Several alternative indium sources have been developed, but none allows ALD at lower temperatures except in the presence of oxidants such as O 2 or O 3 , which are not compatible with some substrates or alloying processes. We have synthesized a new indium precursor, tris( N , N' -diisopropylformamidinato)indium(III), compound 1 , which allows ALD of pure, carbon-free In 2 O 3 films using H 2 O as the only co-reactant, on substrates in the temperature range 150–275 °C. In contrast, replacing just the H of the anionic i PrNC(H)N i Pr ligand with a methyl group (affording the known tris( N , N' -diisopropylacetamidinato)indium(III), compound 2 ) results in a considerably higher and narrower ALD window in the analogous reaction with H 2 O (225–300 °C). Kinetic studies demonstrate that a higher rate of surface reactions in both parts of the ALD cycle gives rise to this difference in the ALD windows.

charge transport↗