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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Strong effect of scandium source purity on chemical and electronic properties of epitaxial Sc x Al 1–x N/GaN heterostructures

Epitaxial multilayer heterostructures of Sc x Al 1–x N/GaN with Sc contents x = 0.11–0.45 are found to exhibit significant differences in structural quality, chemical impurity levels, and electronic properties depending on the starting Sc source impurity levels. A higher purity source leads to a 2–3 orders of magnitude reduction in the carbon, oxygen, and fluorine unintentional doping densities in MBE-grown Sc x Al 1–x N/GaN multilayers. Electrical measurements of Sc x Al 1–x N/n + GaN single heterostructure barriers show a 5–7 orders of magnitude reduction in the electrical leakage for films grown with a higher purity Sc source at most Sc contents. The measured chemical and electrical properties of epitaxial Sc x Al 1–x N highlight the importance of the starting Sc source material purity for epitaxial device applications that need these highly piezoelectric and/or ferroelectric transition-metal nitride alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Molecular beam epitaxy of phase-pure antiperovskite Sr 3 SnO thin films

The antiperovskite oxide Sr 3 SnO has attracted substantial interest due to its topologically non-trivial band structure. Sr-deficient Sr3-xSnO can become superconducting, making it a candidate intrinsic topological superconductor. Here, we show that epitaxial, phase-pure Sr 3-x SnO films can be synthesized by molecular beam epitaxy (MBE) using solid Sr and SnO 2 sources. Here, we show that Sn-rich growth conditions result in a large amount of a Sn-rich impurity phase, which is challenging to detect in x-ray diffraction. Carrier densities and the amount of the impurity phase change systematically with the growth conditions, indicating that MBE provides excellent control over the films' stoichiometry. We discuss the electrical properties, including quantum interference phenomena, which support the topological nature of the films.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Application of the van der Pauw method for electrical conductivity measurements at high temperatures using an insulating compressing ring

High quality data on the high temperature electrical properties of ceramics, particularly oxides, is of great value for material selection, design, and modeling for a broad range of emerging applications. Utilizing the mismatch in the coefficient of thermal expansion between two materials, a purely mechanical method for establishing electrical contact in the van der Pauw geometry to measure the bulk resistivity of ceramic disks at high temperatures is presented. Measurements of a reference material, 20 mol. % Gd-doped cerium oxide, are presented up to 1000 °C. The viability of electrical measurements up to a maximum temperature of 1600 °C is also considered. Measurements are performed using multiple techniques and compared to literature values finding excellent agreement. Finally, the approach described in this work enables the van der Pauw method to be applied to many ceramic materials over a wide range of temperatures and environments.

47 OTHER INSTRUMENTATION↗
DOE OSTI2019

Influence of fluorine doped CdO thin films by an simplified spray pyrolysis technique using nebulizer

The Cadmium oxide (CdO) and Fluorine (F) doped CdO thin films were effectively synthesized on glass substrates for different F doping concentrations (2, 4, 6, 8 at.%) using nebulized spray pyrolysis technique. The XRD analysis showed that all the films were polycrystalline having cubic structure with (111) preferential orientation. It was seen from the SEM photographs that the doping causes remarkable changes in the surface morphology. EDAX analysis clearly confirmed that the presence of expected elements cadmium, oxygen and fluorine in the final product, in appropriate proportions. The electrical study showed that the minimum resistivity value of 1.9 × 10{sup −4} Ω cm with notable higher values of carrier concentration and mobility was achieved for 6 at.% of CdO:F film. Optical study exhibited that the band gap value of CdO film increases gradually with the increase in F-doping concentration, reaching maximum band gap value of 2.61 eV at 6 at.% and starts decreasing thereafter. Photoluminescence spectra depicted that the intensity of the emission peaks was significantly varied with doping concentrations. The high transparency, wide band gap energy, enhanced electrical properties and light sensitivity had been obtained infer that F-doped CdO thin films which find application in optoelectronic applications. Graphical abstract: .

36 MATERIALS SCIENCE↗
DOE OSTI2022

Investigation of Ga 2 O 3 as a new transparent conductive oxide for photovoltaics applications

This small innovation project intended to leverage recent activity and advances in ultrawide-bandgap oxide power electronics toward the investigation of Ga 2 O 3 as a transparent conductive oxide (TCO) for use in photovoltaics (PV). Ga 2 O 3 ’s theoretical advantage over incumbent TCOs is its very large bandgap of 4.8 eV, ensuring optical transparency of photons with λ ≥ 260 nm, effectively the full terrestrial solar spectrum. At the time of proposal writing, literature on Ga 2 O 3 as a TCO/optical material was relatively sparse — what little existed was focused on for UV sensors and/or emitters, with none related to PV. As such, this project was intended to help determine the potential of Ga 2 O 3 as a PV-oriented TCO by investigating its deposition using tools common to the PV and electronics industries — atomic layer deposition (ALD) and RF sputtering (RS), both of which are already used in PV manufacturing — and its resultant optical and electronic properties. Final project goals were to test its application to Si and III-V solar cells. Controllable film thickness and excellent uniformity was established for both methods deposition methods, with ALD providing higher precision for thinner films and RS more effective for growing thicker films. The as-deposited films were found to be amorphous in nature. Spectroscopic ellipsometry (SE) confirmed bandgaps of at least 4.8 eV and non-parasitic absorption across both AM0 and AM1.5G spectra; a refractive index approaching the expected value of 1.8 was also observed, with some degree of tunability based on process parameters. Using this initial optical data, a transfer matrix model, which interfaces with in-house EQE and LIV models, was developed to simulate Ga 2 O 3 optical effects on various solar cells, included potential in antireflection coatings (ARCs). Despite promising optical properties, the resultant resistivity / conductivity metrics did not meet expectations, regardless of deposition process. Although thick RS-deposited films, using both undoped and 1 at% Ge (n-type) doped sintered targets — demonstrated high net carrier concentrations (via C-V), and low specific resistance Ohmic contacts were demonstrated, transmission line measurements (TLM) showed very high resistivity. Further analysis indicated high vertical film conductivity, but very low lateral conductivity. Deeper characterization revealed a relatively high density of nano/microcrystalline inclusions that were ostensibly the source of the vertical conductivity, with the amorphous matrix serving as an effective insulator (likely due to high concentrations of electronic trap states). Despite extensive work to increase film polycrystallinity — demonstrated via high temperature annealing — sufficient lateral conductivity for TCO use was not achieved. The final phase of the project shifted focus toward investigation of ALD-deposited Ga 2 O 3 ’s potential as a passivant and/or passivating contact for both Si and III-V solar cells, with expectation of performance similar to Al 2 O 3 . However, initial rounds of testing using our baseline ALD process yielded minimal (but not quite zero) passivation of both GaInP and Si surfaces. Dielectric passivation is well-known to be highly process sensitive; given the unoptimized nature of the process used, this work was deemed inconclusive. The final outlook with respect to feasibility of Ga 2 O 3 as a PV-oriented TCO is, ultimately, still uncertain. The work performed in this project confirmed the optical properties and deposition methods, but the achieved electrical properties do not meet technological needs; literature reports in recent years are somewhat inconsistent and potentially untrustworthy, but generally appear to be in line with our results. At the very least it is clear that, should Ga 2 O 3 still be under consideration for PV TCO and/or selective contact applications, a significant amount of optimization and study is still needed.

14 SOLAR ENERGY↗
NASA NTRS1975

The time and temperature dependence of the thermoelectric properties of silicon-germanium alloy

Experimental data on the electrical resistivity and Seebeck coefficient of n-type and p-type silicon-germanium alloys are analyzed in terms of a solid-state dopant precipitation model proposed by Lifshitz and Slyozov (1961). Experimental findings on the time and temperature dependence of the thermal conductivity of these two types of alloy indicate that the thermal conductivity of silicon-germanium alloys changes with time, contrary to previous hypothesis. A preliminary model is presented which stipulates that the observed thermal conductivity decrease in silicon-germanium alloys is due partly to dopant precipitation underlying the electrical property changes and partly to enhanced alloying of the material. It is significant that all three properties asymptotically approach equilibrium values with time. Total characterization of these properties will enable the time change to be fully compensated in the design of a thermoelectric device employing silicon-germanium alloys.

Raag, V.↗
NASA NTRS1992

A modeling study of the time-averaged electric currents in the vicinity of isolated thunderstorms

A thorough examination of the results of a time-dependent computer model of a dipole thunderstorm revealed that there are numerous similarities between the time-averaged electrical properties and the steady-state properties of an active thunderstorm. Thus, the electrical behavior of the atmosphere in the vicinity of a thunderstorm can be determined with a formulation similar to what was first described by Holzer and Saxon (1952). From the Maxwell continuity equation of electric current, a simple analytical equation was derived that expresses a thunderstorm's average current contribution to the global electric circuit in terms of the generator current within the thundercloud, the intracloud lightning current, the cloud-to-ground lightning current, the altitudes of the charge centers, and the conductivity profile of the atmosphere. This equation was found to be nearly as accurate as the more computationally expensive numerical model, even when it is applied to a thunderstorm with a reduced conductivity thundercloud, a time-varying generator current, a varying flash rate, and a changing lightning mix.

Driscoll, Kevin T.↗
NASA NTRS1994

Controlled thermal expansion printed wiring boards based on liquid crystal polymer dielectrics

Dielectric materials based on innovative Liquid Crystal Polymers (LCP's) have been used to fabricate surface mount printed wiring boards (PWB's) with a coefficient of thermal expansion matched to leadless ceramic chip carriers. Proprietary and patented polymer processing technology has resulted in self reinforcing material with balanced in-plane mechanical properties. In addition, LCP's possess excellent electrical properties, including a low dielectric constant (less than 2.9) and very low moisture absorption (less than 0.02%). LCP-based multilayer boards processed with conventional drilling and plating processes show improved performance over other materials because they eliminate the surface flatness problems of glass or aramid reinforcements. Laser drilling of blind vias in the LCP dielectric provides a very high density for use in direct chip attach and area array packages. The material is ideally suited for MCM-L and PCMCIA applications fabricated with very thin dielectric layers of the liquid crystal polymer.

Knoll, Thomas E.↗
NASA NTRS2019

Evaluation of Ultem 1000, 1010, and 9085 for Radome Applications at 24.5 GHz

The UAS in the NAS project Flight Test 6 (FT6) campaign scheduled for FY19Q3 will evaluate the proficiency of a Honeywell DAPA-Lite Radar installed on a Tiger Shark unmanned vehicle to detect the presence of air traffic operating in its vicinity. A 3D printed radome will be manufactured for the front of the Tiger Shark to enclose the radar during FT6 operations. The DAPA-Lite radar operates in the 24.5 GHz frequency band. Material properties of 3D printer filaments are widely available for the mechanical and thermal properties, but limited knowledge exists on the electrical properties for radome applications and no data was found to correspond at the 24.5 Ghz frequency band. To minimize project risk associated with the radome performance, transmissivity and reflectivity measurements were conducted on two candidate 3D printed dielectric material filaments (Ultem 1010 Natural and Ultem 9085 Black) and two thicknesses of a solid laminate (Ultem 1000) material. The 3D printed Ultem coupons were tested shortly after being printed and again 8 months later to examine ageing effects of the open cell structure. This paper presents the transmissivity and reflectivity measurement results collected on the Ultem coupons and concludes the 3D printed 1010 Natural coupon is a suitable candidate filament for radome applications at 24.5 GHz. The design of the structure’s open cell matrix has a significant impact on the material’s surface reflectivity.

Szatkowski, George N.↗
DOE OSTI2021

Structural and electronic properties of the first iridium containing mixed B-site spinel oxide: Cu [ Ir 1.5 Cu 0.5 ] O 4

Geometrically frustrated systems populated with large spin-orbit coupled ions are an ideal setting for the exploration of novel exotic states of matter. In this study we present an example of iridium on a mixed B-site spinel oxide structure: Cu [ Ir 1.498 ( 2 ) Cu 0.502 ( 2 ) ] O 4 . Synchrotron XRD refinements reveal a face-centered-cubic structure with space group F d 3 ¯ m and mixed Cu-Ir site disorder within the B 2 O 4 rocksalt substructure. Electrical properties reveal a metallic state within the 50–600-K range with a Kondo effect at T < 50 K . X-ray absorption spectroscopy (XAS) measurements show a mixed Cu 1 + / 2 + and Ir 3 + / 4 + charge partitioned picture, which suggests a metallic/band description with reduced on-site Coulomb interactions. Spin-glass-like freezing is seen at T g = 49 K , and the hysteresis behavior for T > T g resembles that of a strongly frustrated magnet. DFT calculations show sizable hybridization between the Cu 3 d and Ir 5 d states with an effective mixed Ir 3 + / 4 + charge partitioned picture, supporting the electronic and XAS results.

36 MATERIALS SCIENCE↗
DOE OSTI2019

One-Year Electric Field Study at the North Slope of Alaska Field Campaign Report

The Global Electric Circuit (GEC) of the atmosphere provides a unique prospective of the changing climate around the Earth. Monitoring this global electrical signature provides details of the global nature of electrified clouds and thunderstorms that are occurring. Using this very inexpensive measurement system, we can provide much-needed information about the vast electrical system that surrounds us, as well as gaining an understanding of how the electrical properties of global precipitation systems are changing over time. Prior to the OYESNSA field campaign (http://atmos.tamucc.edu/oyesnsa/; https://www.arm.gov/research/campaigns/nsa2017oyesnsa/), much of the electric field data used to compare to the physical properties of electrified clouds were collected in the Antarctica. With the inclusion of this high-quality data set in the Arctic, it allows for the simultaneous observation of the electric field at both poles. Preliminary results from the One-Year Electric Field Study-North Slope of Alaska (OYESNSA) field campaign already show that the GEC appears to be indeed a truly global phenomenon, with very similar fair-weather observations being taken at both poles. This first six months of data has already been uploaded to the ARM Data Center, and preliminary results have been presented at the American Geophysical Union (AGU) 2017 meeting with very positive feedback (http://atmos.tamucc.edu/oyesnsa/AGU_2017_Poster.pdf). The North Slope of Alaska provides a unique location for collecting these electric field measurements. Besides being at the opposite pole from many previous measurements, this site provides a rare opportunity to use the other instruments at the U.S. Department of Energy Atmospheric Radiation Measurement (ARM) user facility’s Barrow, Alaska observatory, such as the Ka-band radar, upwardfacing lidar, vertical profile of meteorological measures, and other aerosol measurements. This allows for the unique chance to not only provide information about the global signature of the GEC, but also the physical inputs to the local electric field, by analyzing the physical properties of the simultaneous cloud, wind, and aerosol properties occurring with the electric field. Barrow, Alaska is home to some unique cloud formations that undoubtedly influence the electric field. This field campaign allows for the quantification of the influence to the electric field of these cloud types, as well as other unique phenomenon such as blowing snow. Already, the first six months of data have shown correlations of the electric field to radar reflectivity properties, cloud types, and increased wind (blowing snow and aerosol). Providing an understanding of these inputs to the local electric field, will improve modeling techniques of this system both locally and globally. <!-- Although the year of measurements from [sic] -->

North Slope of Alaska, micropulse lidar, Ka-band r↗
DOE OSTI2024

Temperature-induced degradation of GaN HEMT: An in situ heating study

High-power electronics, such as GaN high electron mobility transistors (HEMTs), are expected to perform reliably in high-temperature conditions. This study aims to gain an understanding of the microscopic origin of both material and device vulnerabilities to high temperatures by real-time monitoring of the onset of structural degradation under varying temperature conditions. This is achieved by operating GaN HEMT devices in situ inside a transmission electron microscope (TEM). Electron-transparent specimens are prepared from a bulk device and heated up to 800 °C. High-resolution TEM (HRTEM), scanning TEM (STEM), energy-dispersive x-ray spectroscopy (EDS), and geometric phase analysis (GPA) are performed to evaluate crystal quality, material diffusion, and strain propagation in the sample before and after heating. Gate contact area reduction is visible from 470 °C accompanied by Ni/Au intermixing near the gate/AlGaN interface. Elevated temperatures induce significant out-of-plane lattice expansion at the SiNx/GaN/AlGaN interface, as revealed by geometry-phase GPA strain maps, while in-plane strains remain relatively consistent. Exposure to temperatures exceeding 500 °C leads to almost two orders of magnitude increase in leakage current in bulk devices in this study, which complements the results from our TEM experiment. The findings of this study offer real-time visual insights into identifying the initial location of degradation and highlight the impact of temperature on the bulk device’s structure, electrical properties, and material degradation.

36 MATERIALS SCIENCE↗
NASA NTRS2013

Multi-Scale CNT-Based Reinforcing Polymer Matrix Composites for Lightweight Structures

Reinforcing critical areas in carbon polymer matrix composites (PMCs), also known as fiber reinforced composites (FRCs), is advantageous for structural durability. Since carbon nanotubes (CNTs) have extremely high tensile strength, they can be used as a functional additive to enhance the mechanical properties of FRCs. However, CNTs are not readily dispersible in the polymer matrix, which leads to lower than theoretically predicted improvement in mechanical, thermal, and electrical properties of CNT composites. The inability to align CNTs in a polymer matrix is also a known issue. The feasibility of incorporating aligned CNTs into an FRC was demonstrated using a novel, yet commercially viable nanofiber approach, termed NRMs (nanofiber-reinforcing mats). The NRM concept of reinforcement allows for a convenient and safe means of incorporating CNTs into FRC structural components specifically where they are needed during the fabrication process. NRMs, fabricated through a novel and scalable process, were incorporated into FRC test panels using layup and vacuum bagging techniques, where alternating layers of the NRM and carbon prepreg were used to form the reinforced FRC structure. Control FRC test panel coupons were also fabricated in the same manner, but comprised of only carbon prepreg. The FRC coupons were machined to size and tested for flexural, tensile, and compression properties. This effort demonstrated that FRC structures can be fabricated using the NRM concept, with an increased average load at break during flexural testing versus that of the control. The NASA applications for the developed technologies are for lightweight structures for in-space and launch vehicles. In addition, the developed technologies would find use in NASA aerospace applications such as rockets, aircraft, aircraft/spacecraft propulsion systems, and supporting facilities. The reinforcing aspect of the technology will allow for more efficient joining of fiber composite parts, thus offering additional weight savings. More robust structures capable of withstanding micrometeoroid and space debris impacts will be possible with the enhanced mechanical properties imparted by the aligned CNTs incorporated into the fiber composite structure, as well as the potential for improved electrical and thermal properties. The materials fabrication approach developed in the present effort is a platform for customer applications where additional reinforcement is required or would be beneficial, especially in FRC structures and component parts. Depending upon the specific customer application, the NRM could be tailored to the specific matrix resin and desired property enhancement.

Eberly, Daniel↗
NASA NTRSDate not supplied

Print-Consistency and Process-Interaction for Inkjet-Printed Copper on Flexible Substrate

Printed electronics is a fastest growing and emerging technology that have shown much potential in several industries including automotive, wearables, healthcare, and aerospace. Its applications can be found not only in flexible but also in large area electronics. The technology provides an effective and convenient method to additively deposit conductive and insulating materials on any type of substrate. Comparing with traditional manufacturing processes, which involves chemical etching, this technology also comes to be relatively environmental friendly. Despite its status, it is not without its challenges. Starting from the material being compatible in the printer equipment to the point of achieving fine resolutions, and with excellent properties are some of the challenges that printed electronics face. Among the myriad of printing technologies such as Aerosol Jet, micro-dispensing, gravure printing, screen printing, Inkjet printing, Inkjet has gained much attention due to its low-cost, low material consumption, and roll-to-roll capability for mass manufacturing. The technology has been widely used in home and office, but recently gained interest in printed electronics in a research and development setting. Conductive materials used in Inkjet printing generally comprises of metal Nanoparticles that need to be thermally sintered for it to be conductive. The preferred metal of choice has been mostly silver due to its excellent electrical properties and ease in sintering. However, silver comes to be expensive than its counterpart copper. Since copper is prone to oxidation, much focus has been given towards photonic sintering that involves sudden burst of pulsed light at certain energy to sinter the copper Nanoparticles. With this technique, only the printed material gets sintered in a matter of seconds without having a great impact on its substrate, due to which it is also preferred in low temperature applications. With all the knowledge, there is still a large gap in the process side with copper where it is important to look how the print process affects the resolution of the print along with the effect of post-print processes on electrical and mechanical properties. In this paper, a copper Inkjet ink is utilized for understanding the effect of Inkjet print parameters on the ejected droplet and its resolution. Post-print process is also quantified using a photonic sintering equipment for excellent electrical and mechanical properties. To demonstrate the complete process, commercial-off-the-shelf components will also be mounted on the additively printed pads via Inkjet. Statistically, control charting technique will be utilized to understand the capability of the Inkjet process.

printed electronics↗