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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Tunnel drift step recovery diode

Devices, methods and techniques are disclosed for providing a multi-layer diode without voids between layers. In one example aspect, a multi-stack diode includes at least two Drift Step Recovery Diodes (DSRDs). Each DSRD comprises a first layer having a first type of dopant, a second layer forming a region with at least ten times lower concentration of dopants compared to the adjacent layers, and a third layer having a second type of dopant that is opposite to the first type of dopant. The first layer of a second DSRD is positioned on top of the third layer of first DSRD. The first layer of the second DSRD and the third layer of the first DSRD are degenerate to form a tunneling diode at an interface of the first DSRD and second DSRD, the tunneling diode demonstrating a linear current-voltage characteristic.

Voss, Lars F.↗
DOE OSTI2023

Pyrolyzer Assisted Vapor Transport Deposition of Antimony-doped Cadmium Telluride

A new method for in-situ Sb doping of CdTe that uses a modified vapor transport deposition system is described. This modification enables control of the Sb concentration with a pyrolysis stage to enhance the doping efficiency. CdTe:Sb films under different deposition conditions are characterized by SEM, XRD, and CV measurements for determining morphology, crystal structure, and hole concentration. Variations of the Sb dopant heater and pyrolyzer temperatures do not affect the CdTe morphology and crystal structure. However, CV measurements show that a higher dopant heater or pyrolyzer temperature leads to higher hole concentration. In this study, CdTe: Sb films achieve a hole concentration of 1016 cm-3 and 10% doping efficiency when the dopant heater is 600C and the pyrolyzer temperature is 1100C. This demonstrates a path to produce high hole concentration polycrystalline CdTe film with a low concentration of dopant-induced defect.

14 SOLAR ENERGY↗
DOE OSTI2023

Method of chemical doping that uses CMOS-compatible processes

A method of Atomic Precision Advanced Manufacturing (APAM) is provided, in which a substrate is doped from a dopant precursor gas. The method involves covering a surface of the substrate with a hard mask, selectively removing material from the hard mask such that selected areas of the substrate surface are laid bare, exposing the laid-bare areas to the dopant precursor gas, and heating the substrate so as to incorporate dopant from the dopant precursor gas into the substrate surface.

Misra, Shashank↗
DOE OSTI2020

Tuning Fermi Levels in Intrinsic Antiferromagnetic Topological Insulators MnBi 2 Te 4 and MnBi 4 Te 7 by Defect Engineering and Chemical Doping

MnBi 2 Te 4 and MnBi 4 Te 7 are intrinsic antiferromagnetic topological insulators, offering a promising materials platform for realizing exotic topological quantum states. However, high densities of intrinsic defects in these materials not only cause bulk metallic conductivity, preventing the measurement of quantum transport in surface states, but may also affect magnetism and topological properties. In this paper, systematic density functional theory calculations reveal specific material chemistry and growth conditions that determine the defect formation and dopant incorporation in MnBi 2 Te 4 and MnBi 4 Te 7 . The large strain induced by the internal heterostructure promotes the formation of large-size-mismatched antisite defects and substitutional dopants. The results here show that the abundance of antisite defects is responsible for the observed n-type metallic conductivity. Additionally, a Te-rich growth condition is predicted to reduce the bulk free electron density, which is confirmed by experimental synthesis and transport measurements in MnBi 2 Te 4 . Furthermore, Na doping is proposed to be an effective acceptor dopant to pin the Fermi level within the bulk band gap to enable the observation of surface quantum transport. The defect engineering and doping strategies proposed here should stimulate further studies for improving synthesis and for manipulating magnetic and topological properties in MnBi 2 Te 4 , MnBi 4 Te 7 , and related magnetic topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2024

The effect of cerium, neodymium, and ytterbium doping on UO 2 dissolution

Here, the dissolution rate of spent nuclear fuel has been studied heavily to understand the impacts of a failed waste package scenario on potential radionuclide release from a geologic repository. Multiple countries have evaluated these scenarios in oxidizing and reducing environments respective to their relevant repository conditions. The repository environment (e.g., water chemistry, temperature, oxygen content) and the fuel itself (e.g., chemical content of the fuel) both heavily impact the dissolution rate of the spent fuel. This work examined the impact that rare earth element dopants (Ce, Nd, Yb) have on the fuel dissolution under repository relevant conditions with decreasing oxidizing conditions using a single pass flowthrough system. UO 2 samples were doped with Ce, Nd, or Yb with concentrations between 1 and 5 at%. The addition of dopants to the samples reduced the dissolution rates on most samples relative to pure UO 2 samples. Scoping experiments that occurred in a less oxidizing environment showed a reduction in dissolution rate compared to fully oxidizing conditions. The results within highlight the importance of dopant behavior in used fuel dissolution modeling.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2021

Calibration-Free Quantitative Analysis of Lithium-Ion Battery (LiB) Electrode Materials Using Laser-Induced Breakdown Spectroscopy (LIBS)

Recent years have seen a surge in the demand for high-performance battery electrode materials for automotive and various electronic device applications. Improving battery performance requires precise knowledge of the structure–composition properties of active electrode materials. To this effect, quantitative and precise estimation of the composition of advanced electrode materials, containing trace amounts of dopants, provide immense value toward developing next-generation high-capacity battery materials. Herein, we demonstrate the application of calibration-free laser-induced breakdown spectroscopy (LIBS) as a powerful analytical tool for rapid and reliable quantitative spectrochemical characterizations of layered Li metal oxide cathodes containing Mo and Cr dopants (<5 atom %). Specifically, we employ the LIBS using an internal calibration methodology to establish the quantitative elemental ratios of major (Ni, Mn, Co) and trace dopant (Cr, Mo) transition metals to bulk Li contents in diverse cathode material samples such as LiNi 0.5 Mn 0.5 O 2 (NM-50/50), LiNi 0.33 Mn 0.33 Co 0.33 O 2 (NMC), LiNi 0.317 Mn 0.317 Co 0.317 Cr 0.05 O 2 (Cr-doped NMC), and LiNi 0.5– x /2 Mn 0.5– x /2 Mo x O 2 ( x = 0.03, 0.04, 0.05) (Mo-doped NM-50/50) that were synthesized via sol–gel routes. The LIBS-estimated elemental compositions are in good agreement with the nominal stoichiometric values. Furthermore, ex situ LIBS characterizations presented here pave the path for future high-efficacy application of calibration-free quantitative LIBS for rapid in situ analyses of elemental composition changes in battery electrode materials under operation that need not resort to off-site analytical techniques requiring cumbersome sample preparations and/or external standards.

25 ENERGY STORAGE↗
DOE OSTI2021

Elastic and thermodynamic properties of cerium-doped yttrium aluminum garnets

Cerium-doped yttrium aluminum garnets (Y 3-x Ce x Al 5 O 12 , Ce:YAGs) are promising yellow light-emitting components of solid-state white light-emitting diodes. Although there have been numerous studies examining the effects of Ce concentrations on the luminescent properties of Y 3-x Ce x Al 5 O 12 , the impacts of Ce dopant on the elastic and thermodynamic properties are not well understood. In this work, we used resonant ultrasound spectroscopy (RUS) to determine the effects of Ce doping (0.025, 0.1, 1 at. %) on the elastic and thermodynamic properties of Y 3-x Ce x Al 5 O 12 . The elastic moduli calculated via the Voigt–Reuss–Hill (VRH) method demonstrated that low Ce dopant concentrations (≤0.1 at. %) induced negligible effects on the elasticity of the YAG host matrix, while a high Ce concentration (1 at. %) yielded significant softening. RUS spectral analysis and SEM images suggested that the elastic softening originated from microstructural differences induced at higher Ce dopant concentrations. Additionally, we demonstrated an increase in elastic anisotropy at higher Ce concentrations, which further elucidated the correlations between structure and elasticity of Y 3-x Ce x Al 5 O 12 . Debye temperatures ($θ_D$), heat capacities ($C_p$), and thermal conductivities ($\mathit{κ}$) were calculated for Ce:YAGs through the relations of RUS-derived parameters (sound velocities, elastic moduli) and previously determined thermal expansion coefficients. Ce:YAG was found to have a significant reduction in $θ_D$, Cp, and $\mathit{κ}$ at Ce concentrations ≥1 at. %. Lastly, extrapolation of $C_p$ and $\mathit{κ}$ to higher temperatures allowed the modeling of thermal stress experienced by Y 3-x Ce x Al 5 O 12 disks up to 1073.15 K.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A Quenched Disorder in the Quantum-Critical Superconductor CeCoIn 5

Emergent inhomogeneous electronic phases in metallic quantum systems are crucial for understanding high- T c superconductivity and other novel quantum states. In particular, spin droplets introduced by nonmagnetic dopants in quantum-critical superconductors (QCSs) can lead to a novel magnetic state in superconducting phases. However, the role of disorders caused by nonmagnetic dopants in quantum-critical regimes and their precise relation with superconductivity remain unclear. Here, the systematic evolution of a strong correlation between superconductive intertwined electronic phases and antiferromagnetism in Cd-doped CeCoIn 5 is presented by measuring current–voltage characteristics under an external pressure. In the low-pressure coexisting regime where antiferromagnetic (AFM) and superconducting (SC) orders coexist, the critical current ( I c ) is gradually suppressed by the increasing magnetic field, as in conventional type-II superconductors. At pressures higher than the critical pressure where the AFM order disappears, I c remarkably shows a sudden spike near the irreversible magnetic field. In addition, at high pressures far from the critical pressure point, the peak effect is not suppressed, but remains robust over the whole superconducting region. These results indicate that magnetic islands are protected around dopant sites despite being suppressed by the increasingly correlated effects under pressure, providing a new perspective on the role of quenched disorders in QCSs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Ultradoping Boron on Si(100) via Solvothermal Chemistry

Ultradoping introduces unprecedented dopant levels into Si, which transforms its electronic behavior and enables its use as a next-generation electronic material. Commercialization of ultradoping is currently limited by gas-phase ultra-high vacuum requirements. Solvothermal chemistry is amenable to scale-up. However, an integral part of ultradoping is a direct chemical bond between dopants and Si, and solvothermal dopant-Si surface reactions are not well-developed. This work provides the first quantified demonstration of achieving ultradoping concentrations of boron (~1e14 cm 2 ) by using a solvothermal process. Surface characterizations indicate the catalyst cross-reacted, which led to multiple surface products and caused ambiguity in experimental confirmation of direct surface attachment. Density functional theory computations elucidate that the reaction results in direct B-Si surface bonds. Finally, this proof-of-principle work lays groundwork for emerging solvothermal ultradoping processes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Benefits of using multiple Raman laser wavelengths for characterizing defects in a UO 2 matrix

Abstract Raman spectroscopy is one of the most useful techniques for studying the structure of UO 2 and changes due to specific defects caused by doping, changes in stoichiometry, irradiation, or heating under oxidizing conditions. In this paper, we illustrate several aspects of the application of Raman techniques to the study of UO 2 , including the use of wavelength‐dependent excitation (455, 532, and 785 nm) to assess the effects of doping (Nd, Th, and Zr), ion irradiation, and in situ heating and oxidation (UO 2 to U 3 O 8 ). Additionally, we show examples of how correlative microscopy is possible using electron backscatter diffraction combined with Raman maps of specific vibration bands or of laser‐induced luminescence generated by rare‐earth dopants in the matrix. For each of these applications, we suggest optimal excitation wavelengths that vary depending on the desired data. Blue (455 nm) excitation tends to promote oxidation even at low powers, but because Raman spectra change little with doping, irradiation‐induced changes are easier to observe. Green (532 nm) excitation is optimal for observing electron–phonon resonance effects in UO 2 and offers a good compromise for high‐temperature oxidation experiments, delivering high‐quality spectra for both UO 2 and U 3 O 8 . Infrared (785 nm) excitation is best for observing “defect” bands associated with doping in UO 2 , as changes with irradiation are small. Raman spectroscopy is particularly suited for studying the stability of UO 2 towards oxidation in the presence of dopants simulating fission products, where electron–phonon resonant effects, dopant ion luminescence, and mapping can be used together to investigate structural rearrangement as a function of temperature. These techniques can offer insight into microstructural changes in UO 2 fuels at higher burnups envisioned in future reactors.

42 ENGINEERING↗
DOE OSTI2020

Extrinsic Absorption Pathways in Vanadium-Doped SiC Measured Using a Total Internal Reflection Geometry

Vanadium-doped SiC is under study for high-power photoconductive switches and is receiving increased attention as a potential material system for quantum computing, as the V can act as a quantum emitter at telecom wavelengths. Knowledge of the defect-mediated electronic transition pathways from sub-bandgap illumination in this material with low absorption and multi-photon and multi-path transition probability is important in optimizing quantum efficiency. Herein, the optical transitions of vanadium-doped SiC for two polytypes as a function of dopant concentration using a total internal reflection (TIR) geometry are examined. Furthermore, normalized quantum efficiency is reported and correlated with both dopant concentrations (V, N, B, and Al) measured by secondary ion mass spectroscopy (SIMS) and absorption measurements. Although both polytypes respond well to 532 nm light, efficiency at longer wavelengths does not correlate 1:1 with absorption coefficient and strongly depends on the polytype and net background co-dopant concentration. This has important implications for efficient excitation of both carriers for optoelectronics and for the use of V as a quantum emitter.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Metalloborophenes: Structural Diversity and Emerging Properties of Metal–Boron Two‐Dimensional Frameworks

Metalloborophenes, an emerging subclass of 2D materials, have attracted growing attention owing to their exceptional structural diversity and highly tunable electronic and magnetic properties. Constructed from vacancy‐rich borophene frameworks stabilized by electron donation from incorporated metal atoms, metalloborophenes merge the chemical versatility of boron with the functional richness of metal dopants. The first experimental realization of Cu–borophene nanoribbons in 2024 marked a pivotal advance, confirming long‐standing theoretical predictions and revitalizing interest in this new frontier of boron‐based 2D chemistry. Despite this progress, most studies to date remain conceptual and theoretical, constrained by challenges in scalable synthesis, dopant precision, and substrate control. Computational investigations have revealed a broad landscape of stable metalloborophene structures, exhibiting metallic, semiconducting, and magnetic behavior across diverse dopant families, including alkali, alkaline‐earth, transition, and lanthanide elements. These tunable characteristics open promising avenues for applications in spintronics, catalysis, and hydrogen storage. This review provides a comprehensive overview of metalloborophenes, emphasizing the interplay between structure, stability, and functionality, and outlining future directions toward bridging predictive modeling with experimental realization of this rapidly evolving class of 2D materials.

2D materials↗
DOE OSTI2025

A dual promotional effect of doping tantalum (Ta) in atomically dispersed Ru/CeO 2 catalyst toward CO 2 methanation: Enhanced associative adsorption of CO 2 and activation of H 2

Precisely controlling the product selectivity in CO 2 hydrogenation through rational catalyst design presents a promising approach to mitigate environmental and energy-related challenges, though it remains a significant scientific hurdle. Herein, the CH 4 selectivity of 0.5 wt% Ru loaded catalysts at 250 °C was effectively shifted from approximately 35 % to 100 % through the incorporation of Ta dopant into the CeO 2 support. The EXAFS spectra in conjunction with CO DRIFTS experiment indicated the presence of atomically dispersed Ru particles anchored on the Ta-doped CeO 2 surface. A higher oxidized CeO 2 surface was evidenced in the presence of Ta dopant. The presence of Ta dopant also improved the dispersion of Ru species and their interaction with the support. Most importantly, the Ru/Ta-CeO 2 catalyst exhibited a pronounced capacity for associative CO 2 -adsorption under atmospheric pressure at 50 °C. An improved H 2 activation was also observed under CO 2 hydrogenation conditions. This novel finding of the dual promotional effect of Ta carries a significant impact in the field of CO 2 capture and utilization.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Impact of Cr and Co on 99Tc retention in magnetite: A combined study of ab initio molecular dynamics and experiments

This work explores the effect of co-mingled dopants, Co(II) and Cr(III), on Tc(IV) incorporation and retention in magnetite when heat treated to 625 or 700 °C. Key trends in Tc retention in the high temperature regime were identified using a combination of density-functional-theory based ab initio molecular dynamics (AIMD) simulations, and batch experiments including solid phase characterization techniques, e.g. X-ray absorption spectroscopy. A stabilizing effect on Tc(IV) was observed when the number of Tc and Cr atoms are equal or when the magnetite surface is oversaturated with Tc and Cr inclusions. Here, oversaturation is hypothesized to force Cr from the magnetite surface to form a Cr2O3 phase, which may act as a protective layer that prevents Tc release. With the addition of Co, Tc(IV) is stabilized via redox processes. The presence of Cr in low concentrations interferes with this redox stabilization and Cr is preferentially stabilized as opposed to Tc. As a result, using Co as a stabilizing dopant for Tc may be compromised in the presence of Cr. When the relative concentration of Tc, Cr and Co is the same, or more Co atoms are added to high Cr incorporated systems, the formation of the Cr2O3 phase may be suppressed. Although waste streams with co-mingled Tc and Cr potentially may benefit from a Co dopant, since the formation of a Cr2O3 passivation layer may protect incorporated Tc from being released, the relative concentration of the three elements will be a critical parameter for maximizing effectiveness of this strategy.

Lee, Mal Soon↗
DOE OSTI2020

Grand potential sintering simulations of doped UO 2 accident-tolerant fuel concepts

Chromium-doped UO is a widely-studied near-term deployable accident-tolerant fuel concept because it results in a dense, large-grain structure that increases the fuel resistance to densification, swelling, and fission gas release. A new charged-interstitial mechanism was recently proposed to describe the behavior of dopants like chromium in sintered UO 2 . Based on that mechanism, manganese was suggested as an even stronger dopant than chromium. In the current work we use mesoscale sintering simulations in an effort to validate the new mechanism. We compare the relative behavior of Cr-doped and undoped UO 2 against experimental data in the literature. We also make predictions of the relative behavior of Mn-doped UO 2 . Simulations are done using the phase field-based grand potential sintering model. Dopants have two effects on sintered UO 2 . They marginally increase the densification rate and greatly increase the average grain size. Both of these effects are individually tested in small-scale simulations. Then large 3D sintering simulations are used to test the combined behavior of both effects. The results for the densification rate simulations are consistent with experiments for Cr-doped fuels. However, we note the grain growth rates are lower than what is found in the literature for Cr-doped fuels.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2025

Statistical fracture behavior of doped UO 2 using a ball-on-ring equibiaxial flexure test method

Metal oxide dopants, such as titanium and chromium oxides, have garnered considerable attention for their potential to increase grain size (≥ 30 µm) in UO 2 fuel, purportedly enhancing fission gas retention during reactor operation. Fuel performance is significantly impacted by fuel fracture behavior, so it is important to understand the effects of enhanced grain size and dopant content on UO 2 fuel fracture. UO 2 pellets were doped with 0.1 wt% TiO 2 and 0.3 wt% Cr 2 O 3 to alter density and grain size. Inductively coupled plasma mass spectroscopy measured dopant levels pre- and post-sintering. X-ray diffraction revealed lattice changes and microstrain via Rietveld refinement. Field emission scanning electron microscopy determined grain sizes of approximately 30 µm for TiO 2 doping and 7 µm for Cr 2 O 3 doping. Transverse rupture strength tests were performed on over 30 samples per dataset to obtain characteristic strength and Weibull modulus. Results indicate no statistical difference in fracture strength between 0.1 wt% TiO 2 doped UO 2 and undoped UO 2 , while 0.3 wt% Cr 2 O 3 doped UO 2 exhibited a 20% decrease in fracture strength. Doped UO 2 samples also showed reduced Weibull modulus compared to undoped UO 2 , suggesting increased scatter in fracture strength. This study's findings suggest that titanium and chromium oxide doping in UO 2 , regardless of grain size, induce residual stresses, decreasing fracture strength and increasing variability in fracture behavior.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2022

Modeling assisted synthesis of Zr-doped Li 3-x In 1-x Zr x Cl 6 with ultrahigh ionic conductivity for lithium-ion batteries

All-solid-state lithium-ion batteries (ASSLBs) are an important milestone for the future of energy storage because of their capability of impressive energy density and outstanding safety. However, oxide and sulfide solid-state electrolytes (SSEs) suffer from either low ionic conductivity or poor chemical stability. In contrast, halide-based SSEs, are promising as candidate materials owing to high conductivity, good stability, and broad cathode compatibility. Though element doping of the SSEs is an effective and common approach to further improve their electrochemical properties, dopant exploration and optimization through solely experimental trials are both costly and time-consuming. For this aspect, computational simulations for dopant element and concentration screening are adopted in this research and zirconium is selected as a suitable dopant for Li 3 InCl 6 . Further, the synthesized Li 2.75 In 0.75 Zr 0.25 Cl 6 exhibited Li ionic conductivity of 5.82 x 10 -3 Scm -1 at room temperature, which is the highest among reported halide SSEs. The ASSLB formed with Li 2 CoO 2 -Li 2.75 In 0.75 Zr 0.25 Cl 6 -Li/In delivers a high initial capacity of 129.3 mAh∙g -1 . Conclusively, this work provides an effective approach which combines computational modeling and experimental verification for the development of halide SSEs with improved stability and conductivity. The successful design approach and compelling results provide further possibilities and capabilities in future SSE research.

25 ENERGY STORAGE↗