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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Incorporation of superlattice crystal layers in multijunction solar cells

Superlattice layers are effective in decreasing the density of dislocations in lattice mismatched heterostructures at least four orders of magnitude. Hence it was proposed to utilize this feature of superlattices to alleviate the problems due to misfit dislocations generated in the regions between two or more photovoltaic collecting junctions. A further advantage is that the possibility is presented for using silicon as a low cost substrate as well as for the low band gap junction. In the test case, a silicon low gap cell was connected to a GaAs.7P.3 high gap cell through a connecting region containing a GaAs/GaP superlattice.

Blackslee, A. E.↗
DOE OSTI2020

Quantized Grain Boundary States Promote Nanoparticle Alignment During Imperfect Oriented Attachment

Oriented attachment (OA) has become a well-recognized mechanism for the growth of metal, ceramic, and biomineral crystals. While many computational and experimental studies of OA have shown that particles can attach with some misorientation then rotate to remove adjoining grain boundaries, the underlying atomistic pathways for this “Imperfect OA” process remain the subject of debate. In this paper, molecular dynamics and in situ TEM were used to probe the crystallographic evolution of up to 30 gold and copper nanoparticles during aggregation. It was found that Imperfect OA occurs because (1) grain boundaries become quantized when their size is comparable to the separation between constituent dislocations and (2) kinetic barriers associated with the glide of grain boundary dislocations are small. In support of these findings, TEM experiments show the formation of a single crystal aggregate after annealing 9 initially misoriented, agglomerated particles with evidence of dislocation slip and twin formation during particle/grain alignment. These observations motivate future work on assembled nanocrystals with tailored defects and call for a revision of Read-Shockley models for grain boundary energies in nanocrystalline materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1972

Low-temperature solid-state phase transformations in 2H silicon carbide

Single crystals of 2H SiC were observed to undergo phase transformations at temperatures as low as 400 C. Some 2H crystals transformed to a structure with one-dimensional disorder along the crystal c axis. Others transformed to a faulted cubic/6H structure. The transformation is time and temperature dependent and is greatly enhanced by dislocations. Observations indicate that the transformation takes place by means of a slip process perpendicular to the c axis. Cubic SiC crystals were observed to undergo a solid state transformation above 1400 C.

Will, H. A.↗
NASA NTRS2009

Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations. This innovation utilizes newly developed rhombohedral epitaxy of cubic semiconductors on trigonal substrates in order to solve the lattice mismatch problem of SiGe by using trigonal single crystals like sapphire (Al2O3) as substrate to give a unique growth-orientation to the SiGe layer, which is automatically controlled at the interface upon sapphire (0001). This technology is different from previous silicon on insulator (SOI) or SGOI (SiGe on insulator) technologies that use amorphous SiO2 as the growth plane. A cubic semiconductor crystal is a special case of a rhombohedron with the inter-planar angle, alpha = 90 deg. With a mathematical transformation, all rhombohedrons can be described by trigonal crystal lattice structures. Therefore, all cubic lattice constants and crystal planes (hkl) s can be transformed into those of trigonal crystal parameters. These unique alignments enable a new opportunity of perfect lattice matching conditions, which can eliminate misfit dislocations. Previously, these atomic alignments were thought to be impossible or very difficult. With the invention of a new x-ray diffraction measurement method here, growth of cubic semiconductors on trigonal crystals became possible. This epitaxy and lattice-matching condition can be applied not only to SiGe (111)/sapphire (0001) substrate relations, but also to other crystal structures and other materials, including similar crystal structures which have pointgroup rotational symmetries by 120 because the cubic (111) direction has 120 rotational symmetry. The use of slightly miscut (less than plus or minus 10 deg.) sapphire (0001) substrate can be used to improve epitaxial relationships better by providing attractive atomic steps in the epitaxial process.

Choi, Sang↗
DOE OSTI2022

Phase field modeling of dislocations and obstacles in InSb

We present a phase-field dislocation dynamics (PFDD) model informed by first-principle calculations to elucidate the competitive dislocation nucleation and propagation between the glide and shuffle sets in InSb diamond cubic crystal. The calculations are directly informed with generalized stacking fault energy curves on the (111) slip plane for both the “glide set,” with the smaller interplanar spacing, and the “shuffle set,” with the larger interplanar spacing. The formulation also includes elastic anisotropy and the gradient term associated with the dislocation core. The PFDD calculations show that under no stress the equilibrium structure of screw glide set dislocations dissociates into Shockley partials, while those of the shuffle set dislocations do not dissociate, remaining compact. The calculated dislocation core widths of these InSb dislocations agree well with the measured values for other semiconductor materials, such as Si and GaN. We find that a shuffle set dislocation emits from a dislocation source at an applied stress about three times smaller than that needed to emit leading and trailing partials successively on the glide set plane. Once the partial dislocations in the glide set are emitted, they propagate faster than the shuffle set perfect dislocation at the same stress level.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Atomic-scale identification of defects in alite

Crystallographic defects play a crucial role in cement hydration, with initial dissolution being dominated by the formation of etch pits that rely on the intersection of defects on surfaces. However, the defects present in cement particles have remained a mystery due to the lack of detailed direct observation at the atomic scale. In this study, we used scanning transmission electron microscopy to unravel the defects in alite particles at the single-atom level. Our observations identified different types of defects, including vacancies, doping, dislocations, rough surfaces, and grain boundaries. Atomic ordering in the alite crystal was further examined based on our single-atom recognition method. Our findings indicate that defects in cement particles may serve as reactive sites during the early hydration stage, facilitating the initial dissolution and providing nucleation sites for hydration products. Finally, this work provides insights into cement defect formation at the single-atom level and offers new opportunities in tuning the hydration process through defect engineering of cement particles.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Fracton-elasticity duality in twisted moiré superlattices

We formulate a fracton-elasticity duality for twisted moiré superlattices, taking into account that they are incommensurate crystals with dissipative phason dynamics. From a dual tensor-gauge formulation, as compared to standard crystals, we identify twice the number of conserved charges that describe topological lattice defects, namely, disclinations and another type of defects that we dub discompressions. Furthermore, the key implication of these conservation laws is that both glide and climb motions of lattice dislocations are suppressed, indicating that dislocation networks may become exceptionally stable. We also generalize our results to other planar incommensurate crystals and quasicrystals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1983

Observation of defects in mercury cadmium telluride crystals grown by chemical vapor transport

A mixture of nitric and hydrochloric acids was found to yield etch pits on mercury cadmium telluride crystals grown by chemical vapor transport using iodine or mercuric iodide as the transport agent. Two types of pits were observed by optical microscopy: triangular pyramidal and round saucer shaped pits. Transmission electron microscopy confirmed that two types of defects were present: dislocations and second phase occlusions. The present study suggests that the defects are near the crystal surface and therefore will probably not significantly affect the electrical characteristics.

Irene, E. A.↗
DOE OSTI2021

Identification of crystal plasticity model parameters by multi-objective optimization integrating microstructural evolution and mechanical data

Crystal plasticity models evolve a polycrystalline yield surface using meso-scale descriptions of deformation mechanisms. The activation of deformation mechanisms is governed by crystallography and a set of model parameters, which are typically calibrated through the fitting of mechanical data such as stress–strain curves and elastic lattice strains. Microstructural data such as phase fractions and texture evolution are used for verifying crystal plasticity parameters. In this study, we use a multi-objective genetic algorithm to identify hardening parameters from flow stress curves with an option to incorporate texture into the optimization approach. Robust, generalized objective functions are developed and used to identify sets of parameters pertaining to dislocation density-based hardening laws in visco-plastic and elasto-plastic self-consistent (VPSC and EPSC) homogenization models. First, the parameters are identified for pure Nb directly from texture using an objective function based on generalized spherical harmonics. Since texture evolution is driven by the relative contribution of active slip systems, the parameters governing the evolution of slip resistance ratios can be recovered from fitting discrete textures at a series of strains. Next, a comprehensive set of load reversal data for dual phase (DP) 780 steel is used to fit a hardening law and a back-stress law in EPSC. Finally, parameters pertaining to a complex hardening law for the evolution of slip and twinning in pure α-Ti are identified. Remarkably, using texture as an objective in combination with stress–strain objectives constrains the model of Ti to fully reproduce not only stress–strain and texture evolution but also hierarchical twinning measurements as a function of initial grain size and texture. Furthermore, given an appropriate model fit to representative experimental texture evolution, underlying twin volume fractions contributing to texture evolution can be predicted.

42 ENGINEERING↗
DOE OSTI2020

Three-dimensional modeling and simulations of single-crystal and bi-crystal titanium for high-strain-rate loading conditions

High purity single crystal titanium (Ti) under shock wave loading is modeled under both one-dimensional and three-dimensional cylindrical conditions. Cylinder sizes of 10 μm and 20 μm radius are both considered in order to assess influence of boundary conditions. A thermodynamically consistent single crystal model for application to shock conditions is presented. The model accounts for the coupled non-linear elastic, dislocation slip, deformation twinning, and structural phase transformation response of the titanium material. Plate impact experiment results using a copper flyer are used to compare against the simulations for crystals oriented in [0001] and [10$\overline1$1] crystallographic directions. The one-dimensional and threedimensional simulations of the two differently oriented single crystals indicate differences between the one-dimensional and three-dimensional representation, especially for the [10$\overline1$1] oriented single crystal. This orientation breaks the relative orientation symmetry between the crystal and cylinder which otherwise exists for the [0001] oriented single crystal. A significant amount of heterogeneity in the field response of the[10$\overline1$1] oriented simulation was demonstrated due to the highly coupled nature of the deformation. A bi-crystal model composed of both the [0001] and [10$\overline1$1] orientations with the boundary between the two along the axis of the cylinder is also considered for a cylinder model size of 10 μm. The results indicate a strong interaction between the two grains that affects the ω phase volume fraction achieved relative to the single crystal calculations.

36 MATERIALS SCIENCE↗
NASA NTRS1959

Factors Affecting the Plasticity of Sodium Chloride, Lithium Fluoride, and Magnesium Oxide Single Crystals

A study was made of the relative magnitude of the effects of various factors on the ductility of single crystals of sodium chloride (NaCl), lithium fluoride (LiF), and magnesium oxide (MgO). Specimen treatments included water-polishing, varying cleavage rate, annealing, quenching, X-irradiation, surface coating, aging, and combinations of some of these treatments. The mechanical behavior of the crystals was studied in flexure and in compression, the latter study being performed at both constant strain rate and constant load. Etch-pit studies were carried out to provide some pertinent information on the results of pretreatment on the dislocation concentration and distribution in the vicinity of the surface. The load deformation curves for these ionic single crystals show an initial region of very low slope which proved to be due to anelastic deformation. The extent of initial anelastic deformation is modified by specimen pretreatment in a way that suggests that this deformation is the result of expansion of cleaved-in dislocation loops, which can contract on the removal of the stress. The effects of the various pretreatments on the load and deflection at fracture are in accord with the prediction one might make with regard to their effect on the nucleation of fatal surface cracks. For NaCl, increases in ductility are always accompanied by increases in strength. The creep constants for NaCl are a function of treatments which affect the bulk structure but are not a function of treatments which only affect the surface.

Stearns, Carl A.↗
DOE OSTI2022

Performance Study of Virtual Frisch Grid CdZnTeSe Detectors

Nuclear detectors for x-ray and gamma-ray spectroscopy and imaging are a vital tool in many homeland security, medical imaging, astrophysics and other applications. Most of these applications require room-temperature operation due to the operational constraints imposed by a cryogenic cooling system. CdZnTe (CZT) has been the main material with the desired detection properties, and CZT crystals have been used commercially for three decades. However, CdZnTe still suffers from long-standing issues of high densities of performance-limiting intrinsic defects such as Te inclusions and networks of dislocation walls (sub-grain boundaries). A recently invented new quaternary material CdZnTeSe showed excellent material properties for radiation detection. The material was found to be free from dislocation networks, possess reduced Te inclusions, and have better compositional homogeneity. Virtual Frisch grid detectors were fabricated from crystals taken from a CdZnTeSe ingot that was grown by the traveling heater method. The detectors were fabricated from an as-grown ingot, bypassing the post-growth annealing process commonly practiced for industrial-grade CZT. The performances of the detectors were studied with different Frisch grid lengths using an amplifier shaping time ranging from 1–6 µs. The detectors showed high-quality spectroscopic performance with an as-measured energy resolution of ~1.1% at 662 keV for an optimum Frisch grid length of 3 mm. The charge collection was observed to enhance for longer Frisch grids.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Effect of Laser Beam Profile on Rotating Lattice Single Crystal Growth in Sb2S3 Model Glass

Laser heating of chalcogenide glasses has successfully produced rotating lattice single crystals through a solid-solid transformation. To better understand the nature of complex, orientation-dependent lattice rotation, we designed heat profiles of the continuous wave laser by beam shaping, fabricated larger Sb2S3 crystal dots in Sb2S3 glass, and investigated the lattice rotation where the crystal could grow in all radial directions under a circular thermal gradient. The results show that the rate of lattice rotation is highly anisotropic and depends on crystallographic direction. The nature of this rotation is the same in crystals of different orientation relative to the surface. The growth directions that align with the slip planes show the highest rate of rotation and the rotation rate gradually decreases away from this direction. Additionally, the presence of multiple growth directions results in a complicated rotation system. We suggest that the growth front influences the density of dislocations introduced during growth under confinement and thus affects the lattice rotation rate in these crystals.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Crystal plasticity modeling and analysis for the transition from intergranular to transgranular failure in nickel-based alloy Inconel 740H at elevated temperature

The precipitation-strengthened Nickel alloy Inconel® 740H® (IN740H) exhibits increased ductility at higher applied strain rates during quasi-static tensile tests at an elevated temperature of 760°C. The examination of fracture surfaces in this context reveals a noteworthy transition of underlying fracture mechanisms from transgranular to intergranular fracture as the applied strain rate decreases from 1×10 -3 / s to 0.83×10 -4 / s . To thoroughly understand the mechanical response of IN740H under these conditions, this study develops a crystal plasticity finite element (CPFE) model. Further, this model incorporates various deformation mechanisms including dislocation slips, climb, and grain boundary sliding, which are relevant to the test conditions. The model is calibrated using data from both tensile tests at different strain rates and creep tests across a broad stress range at 760°C, enabling the accurate determination of model parameters for each mechanism. Simulation results well captured the experimental observations of different failure modes. At higher strain rates, the model shows a dominance of dislocation slip leading to heterogeneous plastic deformation and formation of transgranular shear bands causing the failure, while at lower strain rates, an increased activity of grain boundary sliding causes grain boundaries crack leading to intergranular failure.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1978

Structure development in silicon sheet by shaped crystallization

Models are presented for the development of a parallel twinned structure of the 110 plane type and the 112 line type in silicon ribbons. The models are believed to be mutually compatible and operable. The first model relates the requirements for super-cooling during crystallization. The existence of reentrant angles associated with the twin structure is proposed to provide a rough interface to reduce super-cooling. The spacing of the twins is proposed to be limited by the geometrical relationship between the thermal gradient in the liquid and the dimensions of the twinned crystallization front. The second model relates the thermal stress configuration to detail dislocation reactions which would be expected to develop twins. While a specific dislocation mechanism cannot yet be defined, a number of alternatives are presented. All of these various dislocation mechanisms would result in the observed crystalline configuration and the choice among them is not critical.

Leipold, M. H.↗
NASA NTRS1988

Minority-carrier lifetime analysis of silicon epitaxy and bulk crystals with nonuniformly distributed defects

Existing analyses of the pulsed response of an MOS capacitor for minority-carrier lifetime determination result in a lifetime value averaged over most of the depletion region width. In this report, an analysis of MOS C-t data is presented that enables minority-carrier generation lifetime to be plotted as a function of depletion region depth. The technique is shown to be useful for samples with bulk or buried interfacial layer defects that have defect-free surfaces. Data are presented for intrinsically gettered bulk crystals and extrinsically gettered Si(2-pct Ge) epitaxial layers with misfit dislocations. In addition, for samples that do have uniform lifetimes, the measurement time required for determining carrier lifetime has been reduced by more than an order of magnitude.

Radzimski, Zbignew↗
NASA NTRS1994

High quality InP-on-Si for solar cell applications

InP on Si solar cells combine the low-cost and high-strength of Si with the high efficiency and radiation tolerance of InP. The main obstacle in the growth of single crystal InP-on-Si is the high residual strain and high dislocation density of the heteroepitaxial InP films. The dislocations result from the large differences in lattice constant and thermal expansion mismatch of InP and Si. Adjusting the size and geometry of the growth area is one possible method of addressing this problem. In this work, we conducted a material quality study of liquid phase epitaxy overgrowth layers on selective area InP grown by a proprietary vapor phase epitaxy technique on Si. The relationship between growth area and dislocation density was quantified using etch pit density measurements. Material quality of the InP on Si improved both with reduced growth area and increased aspect ratio (length/width) of the selective area. Areas with etch pit density as low as 1.6 x 10(exp 4) sq cm were obtained. Assuming dislocation density is an order of magnitude greater than etch pit density, solar cells made with this material could achieve the maximum theoretical efficiency of 23% at AMO. Etch pit density dependence on the orientation of the selective areas on the substrate was also studied.

Shellenbarger, Zane A.↗
DOE OSTI2021

High–Pressure Deformation of Iron–Nickel–Silicon Alloys and Implications for Earth’s Inner Core

Earth’s inner core exhibits strong seismic anisotropy, often attributed to the alignment of hexagonal close-packed iron (hcp-Fe) alloy crystallites with the Earth’s poles. How this alignment developed depends on material properties of the alloy and is important to our understanding of the core’s crystallization history and active geodynamical forcing. Previous studies suggested that hcp-Fe is weak under deep Earth conditions but did not investigate the effects of the lighter elements known to be part of the inner core alloy. Here, we present results from radial X-ray diffraction experiments in a diamond anvil cell that constrain the strength and deformation properties of iron-nickel-silicon (Fe–Ni–Si) alloys up to 60 GPa. We also show the results of laser heating to 1650 K to evaluate the effect of temperature. Observed alloy textures suggest different relative activities of the various hcp deformation mechanisms compared to pure Fe, but these textures could still account for the theorized polar alignment. Fe–Ni–Si alloys are mechanically stronger than Fe and Fe–Ni; extrapolated to inner core conditions, Si-bearing alloys may be more than an order of magnitude stronger. Furthermore, this enhanced strength proportionally reduces the effectivity of dislocation creep as a deformation mechanism, which may suggest that texture developed during crystallization rather than as the result of postsolidification plastic flow.

36 MATERIALS SCIENCE↗