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All sourcesNASA NTRSDOE OSTI
NASA NTRS2016

Phased Array Beamforming and Imaging in Composite Laminates Using Guided Waves

This paper presents the phased array beamforming and imaging using guided waves in anisotropic composite laminates. A generic phased array beamforming formula is presented, based on the classic delay-and-sum principle. The generic formula considers direction-dependent guided wave properties induced by the anisotropic material properties of composites. Moreover, the array beamforming and imaging are performed in frequency domain where the guided wave dispersion effect has been considered. The presented phased array method is implemented with a non-contact scanning laser Doppler vibrometer (SLDV) to detect multiple defects at different locations in an anisotropic composite plate. The array is constructed of scan points in a small area rapidly scanned by the SLDV. Using the phased array method, multiple defects at different locations are successfully detected. Our study shows that the guided wave phased array method is a potential effective method for rapid inspection of large composite structures.

Tian, Zhenhua↗
NASA NTRS1984

Influence of soft inclusions on the strength of wrought materials

The three dimensional soft particles (such as sulfides, silicates and voids) present in most materials are modelled by circular voids in sheet metal. Relationships are sought between the shape and orientation of a hole after rolling and testing in tension. Then, the effect of hole shape and size on mechanical properties is considered experimentally. The presence of voids has a negligible influence on the ultimate tensile stress of ductile materials based on the unperforated area because plastic flow neutralizes the stress intensification present in the elastic region. However, the shape and orientation of the defects are found to play an important role relative to strain at fracture. In certain engineering applications the strain at fracture is more important than the stress at fracture and in this sense the presence of voids are considered to influence the strength of a ductile material.

Pai, D. M.↗
NASA NTRS1998

Atomic Chain Electronics

Adatom chains, precise structures artificially created on an atomically regulated surface, are the smallest possible candidates for future nanoelectronics. Since all the devices are created by combining adatom chains precisely prepared with atomic precision, device characteristics are predictable, and free from deviations due to accidental structural defects. In this atomic dimension, however, an analogy to the current semiconductor devices may not work. For example, Si structures are not always semiconducting. Adatom states do not always localize at the substrate surface when adatoms form chemical bonds to the substrate atoms. Transport properties are often determined for the entire system of the chain and electrodes, and not for chains only. These fundamental issues are discussed, which will be useful for future device considerations.

Yamada, Toshishige↗
NASA NTRS1994

Effects of Plasma Hydrogenation on Trapping Properties of Dislocations in Heteroepitaxial InP/GaAs

In previous work, we have demonstrated the effectiveness of a post-growth hydrogen plasma treatment for passivating the electrical activity of dislocations in metalorganic chemical vapor deposition (MOCVD) grown InP on GaAs substrates by a more than two order of magnitude reduction in deep level concentration and an improvement in reverse bias leakage current by a factor of approx. 20. These results make plasma hydrogenation an extremely promising technique for achieving high efficiency large area and light weight heteroepitaxial InP solar cells for space applications. In this work we investigate the carrier trapping process by dislocations in heteroepitaxial InP/GaAs and the role of hydrogen passivation on this process. It is shown that the charge trapping kinetics of dislocations after hydrogen passivation are significantly altered, approaching point defect-like behavior consistent with a transformation from a high concentration of dislocation-related defect bands within the InP bandgap to a low concentration of individual deep levels after hydrogen passivation. It is further shown that the "apparent" activation energies of dislocation related deep levels, before and after passivation, reduce by approx. 70 meV as DLTS fill pulse times are increased from 1 usec. to 1 msec. A model is proposed which explains these effects based on a reduction of Coulombic interaction between individual core sites along the dislocation cores by hydrogen incorporation. Knowledge of the trapping properties in these specific structures is important to develop optimum, low loss heteroepitaxial InP cells.

Ringel, S. A.↗
NASA NTRS1994

Effects of plasma hydrogenation on trapping properties of dislocations in heteroepitaxial InP/GaAs

In previous work, we have demonstrated the effectiveness of a post-growth hydrogen plasma treatment for passivating the electrical activity of dislocations in metalorganic chemical vapor deposition (MOCVD) grown InP on GaAs substrates by a more than two order of magnitude reduction in deep level concentration and an improvement in reverse bias leakage current by a factor of approximately 20. These results make plasma hydrogenation an extremely promising technique for achieving high efficiency large area and light weight heteroepitaxial InP solar cells for space applications. In this work we investigate the carrier trapping process by dislocations in heteroepitaxial InP/GaAs and the role of hydrogen passivation on this process. It is shown that the charge trapping kinetics of dislocations after hydrogen passivation are significantly altered, approaching point defect-like behavior consistent with a transformation from a high concentration of dislocation-related defect bands within the InP bandgap to a low concentration of individual dislocation related deep levels, before and after passivation. It is further shown that the 'apparent' activation energies of dislocation related deep levels, before and after passivation, reduce by approximately 70 meV as DLTS fill pulse times are increased from 1 microsecond to 1 millisecond. A model is proposed which explains these effects based on a reduction of Coulombic interaction between individual core sites along the dislocation cores by hydrogen incorporation. Knowledge of the trapping properties in these specific structures is important to develop optimum, low loss heteroepitaxial InP cells.

Ringel, S. A.↗
NASA NTRS1985

Influence of voids on the strength of wrought materials

Three-dimensional voids, which are present in most materials, may be satisfactorily modelled by two-dimensional holes (i.e., cylindrical voids) in sheet metal. In this study, the influence of certain orientations and shapes of voids upon the mechanical properties and fracture behavior of certain ductile materials has been studied. The presence of voids is found to exert a negligible influence on the ultimate tensile strength, owing to plastic flow neutralizing the stress intensification present before yielding occurs. The shape and orientation of the defects, however, are seen to play an important role relative to strain at fracture. The maximum intensified tensile stress criterion which holds for brittle materials is found to apply to ductile materials as well.

Shaw, M. C.↗
NASA NTRS1999

Mechanical Properties of Friction Stir Welds in A12195-T8

An extensive study of the mechanical properties of friction stir welded Al-Li 2195 has been conducted by Lockheed Martin Michoud Space Systems under contract to NASA. The study was part of a development program in which weld parameters were defined for using FSW to assemble large-scale aluminum cryogenic tanks. In excess of 300 feet of 0.320 in. gage plate material was welded and tested. The tests include room temperature and cryogenic temperature tensile tests and surface crack tension (SCT) tests, nondestructive evaluation, metallurgical studies, and photostress analysis. The results of the testing demonstrated improved mechanical properties with FSW as compared to typical fusion welding processes. Increases in ultimate tensile strength, cryogenic enhancement and elongation were observed with the tensile test results. Increased fracture toughness was observed with the SCT results. Nondestructive evaluations were conducted on all welded Joints. No volumetric defects were indicated. Surface indications on the root side of the welds did not significantly affect weld strength. The results of the nondestructive evaluations were confirmed via metallurgical studies. Photostress analysis revealed strain concentrations in multi-pass and heat-repaired FSW's. Details of the tests and results are presented.

Kinchen, David G.↗
NASA NTRS2002

The Design of Fault Tolerant Quantum Dot Cellular Automata Based Logic

As transistor geometries are reduced, quantum effects begin to dominate device performance. At some point, transistors cease to have the properties that make them useful computational components. New computing elements must be developed in order to keep pace with Moore s Law. Quantum dot cellular automata (QCA) represent an alternative paradigm to transistor-based logic. QCA architectures that are robust to manufacturing tolerances and defects must be developed. We are developing software that allows the exploration of fault tolerant QCA gate architectures by automating the specification, simulation, analysis and documentation processes.

Armstrong, C. Duane↗
NASA NTRS2007

Bulk Crystal Growth of Piezoelectric PMN-PT Crystals Using Gradient Freeze Technique for Improved SHM Sensors

There has been a growing interest in recent years in lead based perovskite ferroelectric and relaxor ferroelectric solid solutions because of their excellent dielectric, piezoelectric and electrostrictive properties that make them very attractive for various sensing, actuating and structural health monitoring (SHM) applications. We are interested in the development of highly sensitive and efficient PMN-PT sensors based on large single crystals for the structural health monitoring of composite materials that may be used in future spacecrafts. Highly sensitive sensors are needed for detection of defects in these materials because they often tend to fail by distributed and interacting damage modes and much of the damage occurs beneath the top surface of the laminate and not detectable by visual inspection. Research is being carried out for various combinations of solid solutions for PMN-PT piezoelectric materials and bigger size crystals are being sought for improved sensor applications. Single crystals of this material are of interest for sensor applications because of their high piezoelectric coefficient (d33 greater than 1700 pC/N) and electromechanical coefficients (k33 greater than 0.90). For comparison, the commonly used piezoelectric ceramic lead zirconate titanate (PZT) has a d33 of about 600 pC/N and electromechanical coefficients k33 of about 0.75. At the present time, these piezoelectric relaxor crystals are grown by high temperature flux growth method and the size of these crystals are rather small (~3x4x5 mm(exp 3). In the present paper, we have attempted to grow bulk single crystals of PMN-PT in a 2 inch diameter platinum crucible and successfully grown a large size crystal of 67%PMN-33%PT using the vertical gradient freeze technique with no flux. Piezoelectric properties of the grown crystals are investigated. PMN-PT plates show excellent piezoelectric properties. Samples were poled under an applied electric field of 5 kV/cm. Dielectric properties at a frequency of 1 kHz are examined. The grown PMN-PT crystals show typical relaxor dielectric properties. Additionally, the thermal properties of the sample are tested. The results are in good agreement with those found in the literature and some are reported for the first time.

Aggarwal, Mohan D.↗
NASA NTRS1976

A complete model of turbulence

A set of constitutive equations suitable for a priori computation of turbulent shear flows has been developed. Since no properties of a given turbulent flow need be known in advance in order to obtain a solution, the equations comprise a complete model of turbulence. Perturbation analysis shows that the model predicts a composite five-layer structure for an incompressible turbulent boundary layer, viz, a defect layer, a law-of-the-wall layer, a viscous sublayer, a near-surface roughness layer, and a viscous superlayer at the boundary-layer edge. Analysis of the defect layer demonstrates the key improvement of the model over its predecessor, the Saffman-Wilcox two-equation model of turbulence. Examination of model-predicted sublayer structure yields model-parameter boundary conditions appropriate for surfaces with roughness and mass injection. Results of numerical computations of compressible and incompressible equilibrium boundary layers show that, for such flows, the model is as accurate as mixing-length theory. Applications to transitional boundary layers and to nonequilibrium relaxation of a boundary layer passing from a rough to a smooth surface indicate that the model's applicability extends far beyond that of mixing-length theory's.

Wilcox, D. C.↗
NASA NTRS1985

Radiation effects induced in pin photodiodes by 40- and 85-MeV protons

PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th power p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.

Becher, J.↗
NASA NTRS1985

PIN photodiodes irradiated with 40- and 85-MeV protons

PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current, and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length, and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.

Reft, C. S.↗
NASA NTRS1998

Photonic and Opto-Electronic Applications of Polydiacetylene Films Photodeposited from Solution and Polydiacetylene Copolymer Networks

Polydiacetylenes (PDAS) are attractive materials for both electronic and photonic applications because of their highly conjugated electronic structures. They have been investigated for applications as both one-dimensional (linear chain) conductors and nonlinear optical (NLO) materials. One of the chief limitations to the use of PDAs has been the inability to readily process them into useful forms such as films and fibers. In our laboratory we have developed a novel process for obtaining amorphous films of a PDA derived from 2-methyl4-nitroaniline using photodeposition with Ultraviolet (UV) light from monomer solutions onto transparent substrates. Photodeposition from solution provides a simple technique for obtaining PDA films in any desired pattern with good optical quality. This technique has been used to produce PDA films that show potential for optical applications such as holographic memory storage and optical limiting, as well as third-order NLO applications such as all-optical refractive index modulation, phase modulation and switching. Additionally, copolymerization of diacetylenes with other monomers such as methacrylates provides a means to obtain materials with good processibility. Such copolymers can be spin cast to form films, or drawn by either melt or solution extrusion into fibers. These films or fibers can then be irradiated with UV to photopolymerize the diacetylene units to form a highly stable cross-linked PDA-copolymer network. If such films are electrically poled while being irradiated, they can achieve the asymmetry necessary for second-order NLO applications such as electro-optic switching. On Earth, formation of PDAs by the above mentioned techniques suffers from defects and inhomogeneities caused by convective flows that can arise during processing. By studying the formation of these materials in the reduced-convection, diffusion-controlled environment of space we hope to better understand the factors that affect their processing, and thereby, their nature and properties. Ultimately it may even be feasible to conduct space processing of PDAs for technological applications.

Paley, Mark S.↗
NASA NTRSDate not supplied

Modernization of Insulative Reusable Thermal Protection Systems (IRTPS)

Insulative thermal protection systems, such as Flexible Reusable Surface Insulation blankets and High Temperature Reusable Surface Insulation tiles, were developed for the Shuttle Orbiter to enable reuse of the vehicle for low-earth orbit missions. Since reusability is essential to many new industry launch and space vehicles, Shuttle-derived thermal protection materials (TPMs) are being sought for their flight proven performance. Alumina Enhanced Thermal Barrier (AETB) is the state-of-the-art tile material that was developed in the 90’s. AETB along with associated coatings, reaction cured glass (RCG) and Toughened Unipiece Fibrous Insulation (TUFI), are currently made by NASA using heritage raw materials derived from lifetime purchases. Finding viable replacements for raw materials that have changed in nature or are obsolete is important for continuation of these TPMs. In some cases, the use of modern raw materials has been shown to yield tile with reduced performance, most notably in mechanical properties. ​ In this work, the production of AETB will be discussed to better understand the process-structure-property relationships and for allowing use of these modern alternatives. A small-scale tile casting system was developed for rapid and efficient exploration of the manufacturing variables such raw material selection and pre-processing, casting process parameters, and billet firing protocols. An optical transmission defect characterization technique was implemented to correlate process variables to structure. Comparisons between TUFI/RCG coated AETB derived from heritage and modern raw materials will be shown including AHF arc jet test results completed under a collaboration with Stratolaunch.

thermal protection materials↗
NASA NTRS2000

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths. In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors. With an energy gap of 2.7 eV at room temperature, and an efficient band- to-band transition, ZnSe has been studied extensively as the primary candidate for a blue light emitting diode for optical displays, high density recording, and military communications. By employing a ternary or quaternary system, the energy band gap of II-VI materials can be tuned to a specific range. While issues related to the compositional inhomogeneity and defect incorporation are still to be fully resolved, ZnSe bulk crystals and ZnSe-based heterostructures such as ZnSe/ZnSeS, ZnSe/ZnCdSe and ZnCdSe/ZnSeS have showed photopumped lasing capability in the blue-green region at a low threshold power and high temperatures. The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk H-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology.

Su, Ching-Hua↗
NASA NTRS2003

Creep Resistance of ZrO2 Ceramic Improved by the Addition of a Small Amount of Er2O3

Zirconia (ZrO2) has great technological importance in structural, electrical, and chemical applications. It is the crucial component for state-of-the art thermal barrier coatings and an enabling component as a solid electrolyte for solid-oxide fuel cell systems. Pure ZrO2 is of limited use for industrial applications because of the phase transformations that occur. Upon the addition of stabilizers, cubic (c-ZrO2) and tetragonal (t-ZrO2) forms can be preserved. It is the stabilized and partially stabilized forms of zirconia that function as thermal barrier coatings, solid electrolytes, and oxygen sensors and that have numerous applications in the electrochemical industry. The cubic form of ZrO2 is typically stabilized through Y2O3 additions. However, Y2O3-stabilized zirconia is susceptible to deformation at high temperatures (greater than 900 C) because of the large number of slip systems and the high oxygen diffusion rates, which result in high creep rates at high temperatures. Successful use of ZrO2 at high temperatures requires that new dopant additives be found that will retain or enhance the desirable properties of cubic ZrO2 and yet produce a material with lower creep rates. At the NASA Glenn Research Center, erbium oxide (Er2O3) was identified as a promising dopant for improving the creep resistance of. ZrO2. The selection of Er2O3 was based on the strong interactions of point defects and dislocations. Single crystals of 5 mol% Er2O3- doped ZrO2 rods (4 mm in diameter) and monofilaments (200 to 300 mm in diameter and 30 cm long) were grown using the laser-heated float zone technique, and their creep behavior was measured as a function of temperature. The addition of 5 mol% Er2O3 to single-crystal ZrO2 improved its creep resistance at high temperatures by 2 to 3 orders of magnitude over state-of-the-art Y2O3-doped crystals. Detailed microstructural characterization of ZrO2-Er2O3 single crystals has identified new mechanisms for improving the creep resistance of this class of materials. Adding Er2O3 to ZrO2 results in microstructure of stable and metastable tetragonal precipitates that with thermal treatment evolve to a tweed structure of nanosize tetragonal lamellae. The superior high-temperature creep resistance of Er2O3-doped ZrO2 is attributed to nanoscale precipitation hardening. Doping with Er2O3 will significantly increase the upper-use temperature limit of ZrO2. Potential applications include using Er2O3-doped ZrO2 as a high-temperature fiber for structural applications and adding Er2O3 to reduce the sintering rates of ZrO2 thermal barrier coatings. This work was conducted at Dpto. de F sica de la Materia Condensada, Universidad de Sevilla, Spain, and at NASA Glenn.

Martinez-Fernandez, Julian↗
NASA NTRS2019

Using Defects to Create Ceramics with Giant Permittivity as Ultracapacitors

Dielectrics with a high and weakly- temperature-dependent permittivity are highly desirable for the development of high performance energy storage devices. It is well known that ferroelectrics (FEs) exhibit a high permittivity that is strongly dependent on the temperature due to phase transition. In this project, the FE BaTiO3 (BTO), based ceramics are developed as ultra-capacitors by introducing defects to eliminate the phase transition and enhance the permittivity. The ceramics are fabricated using a unique process: BTO nanoparticles are coated with a nano-layer of SiO2 and, then, sintered in vacuum using SPS process. The ceramics exhibit a giant permittivity and many other unique properties.

Talebinezhad, H.↗
NASA NTRS1974

Surface topographical effects on the structural growth of thick sputtered metal and alloy coatings

Thick sputtered S-Monel, silver, and 304 stainless steel coatings were deposited on mica and metal substrates with various surface finishes to investigate the structural growth of the coating by scanning electron microscopy. The geometry and the surface structure of the nodules are characterized. Compositional changes within the coating were analyzed by X-ray dispersion miscroscopy. Defects in the surface finish act as preferential nucleation sites and form isolated and complex nodules and various surface overgrowths in the coating. The nodule boundaries are very vulnerable to chemical etching, and these nodules do not disappear after full annealing. Further, they have undesirable effects on mechanical properties; cracks are initiated at the nodules when the coating is stressed by mechanical forces.

Spalvins, T.↗