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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Effect of a Nitrogen Impurity on the Fundamental Raman Band of Diamond Single Crystals

The effect of nitrogen defects in natural and synthetic diamond single crystals on the position and half-width of the fundamental Raman band was investigated. Samples containing the main types of nitrogen lattice defects at impurity contents of 1–1500 ppm were studied. The parameters of the Stokes and anti-Stokes components in Raman spectra of crystals situated in a cell with distilled water to minimize the influence of heating by the exciting laser radiation were analyzed to determine the effect of a nitrogen impurity in the diamond crystal lattice. It was shown that an increase of impurity atoms in the crystals in the studied concentration range resulted in broadening of the Raman band from 1.61 to 2.85 cm{sup –1} and shifting of the maximum to lower frequency from 1332.65 to 1332.3 cm{sup –1}. The observed effect was directly proportional to the impurity concentration and depended on the form of the impurity incorporated into the diamond lattice. It was found that the changes in the position and half-width of the fundamental Raman band for diamond were consistent with the magnitude of crystal lattice distortions due to the presence of impurity defects and obeyed the Gruneisen law.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Focused ion beam milling of polycrystalline diamond

Focused ion beam (FIB) technology has a large potential for precise milling of ultrahard materials such as diamond. However, studies of the sputtering of diamond with ion species and energies relevant to the FIB technology are scarce. Here, we report a systematic study of the sputtering of polycrystalline diamond surfaces with ion beams in a wide range of ion energies (2 - 30 keV), incident beam angles (0 - 80°), and ion masses (N, O, Ar, and Xe). Results show that the sputter yield is relatively insensitive to ion energy but strongly depends on the ion species and incident beam angles. Bombardment with O ions results in sputter yields that are significantly larger than ballistic predictions due to chemical etching effects. Characteristic surface ripples develop for oblique beam incidence angle irradiation. The critical beam tilt angle for the onset of ripple formation and the wavelength of the ripples depend on ion species and energies. Ripples appear to suppress ion reflection at high beam tilt angles and, hence, a peak in the sputter yield angular dependence. In conclusion, these results have direct implications for the development of process parameter maps for high-precision ion-beam milling of diamond.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Thermo-physical properties of diamond nanofluids: A review

Nanofluids give ample opportunities to enhance the efficiency of thermal systems by improving the thermal properties of the host fluids. Because of its exceptional thermal, mechanical and electrical properties, diamond has attracted attention for use as a nanoparticle in fluids. Thereby, nanofluids have proven to be useful in applications, especially electronic cooling, where increasing thermal properties and avoiding electrical conductivity are vital. There have been numerous investigations of nanodiamond-nanofluid systems with many suggesting that considerable property enhancements, e.g., increased thermal conductivity, might be possible. Yet, those results have not been collectively compared or discussed. This paper reviews and summarizes the experimental values of the physical and thermal properties, including an appropriate focus on the thermal conductivity enhancement, of nanodiamond-nanofluid systems found in the literature as well as different techniques for thermal conductivity measurement. The effect of various factors on the thermal-physical properties of diamond nanofluids is also reviewed, and the stability and viscosity of diamond nanofluids are tabulated and compared. The preparation and properties of hybrid nanofluids containing diamond nanoparticles are analyzed and discussed in detail, and a list of potential uses for these enhanced heat transfer fluids in industrial and commercial applications is provided and deliberated.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Bethe-Salpeter Equation calculations of nitrogen-vacancy defects in diamond

Doped diamonds are of significant fundamental, technological, and commercial interest. For example, boron doping leads to a blue coloration at low concentration and superconductivity at high concentration. Similarly nitrogen doping can cause a variety of colors in diamond. Nitrogen-vacancy defects are also promising as quantum-computing qubits. Theoretical Bethe-Salpeter Equation (BSE) simulations of boron-doped diamonds have been found to give optical absorption spectra in good agreement with their observed blue coloration. In contrast, nitrogen defects are more complex, due in part to a plethora of possible N-defect conformations. Here, in this study, we present a theoretical study of several neutral, isolated, N-defect conformations that combines ab initio DFT calculations for relaxed 64-atom unit cells together with first principles GW/BSE calculations of their optical spectra. Spectral results are compared with available experimental data, and the effects of absorption are simulated for realistic rendered diamonds.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Photoluminescence studies of growth-sector dependence of nitrogen distribution in synthetic Ib diamond

The photoluminescence technology previously employed to investigate the boron distribution of type IIb diamond has now been applied to study the nitrogen distribution of type Ib diamond. All growth sectors were clearly distinguished by the characteristic colors and the brightness of the synthetic Ib diamond's cathodoluminescence topography. As a measure of the concentration of nitrogen impurity, the nitrogen-vacancy luminescence gave relative concentrations in different growth sectors as: the (111) sector was the highest, followed by the (311), (100) and (511) sectors. The results were reconfirmed by the evidence of the broadened and strengthened zero phonon lines of nitrogen-vacancy center with the increase of nitrogen concentration of type Ib diamond. - Highlights: • The growth sectors were clearly distinguished by CL technology. • The N distribution was investigated by the examination of PL spectroscopy. • Results showed that (111) has the highest N, followed by (311), (100) and (511). • The conclusion was reconfirmed by the PL results of NV center.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Strain-induced ordered structure of titanium carbide during depositing diamond on Ti alloy substrate

During the deposition of diamond films on Ti alloy substrates, titanium carbide is a common precipitated phase, preferentially formed at the interfacial region. However, in this case, the precipitation of an ordered structure of titanium carbide has not been reported. In our work, a long periodic ordered structure of TiC has been observed at the deposited diamond film/Ti alloy interface by high resolution transmission electron microscopy (HRTEM). The long periodic ordered structure is identified as 6H-type. The formation mechanism is revealed by comparative studies on the different structures of TiC precipitated under different diamond deposition conditions in terms of deposition time, atmosphere and temperature. A large number of carbon vacancies in the interfacial precipitated TiC phase are verified through electron energy loss spectroscopy (EELS) quantification analysis. However, an ordered arrangement of these carbon vacancies occurs only when the interfacial stress is large enough to induce the precipitation of 6H-type TiC. The supplementary analysis by X-ray diffraction (XRD) further confirms that additional diffraction peaks presented in the XRD patterns are corresponding to the precipitation of 6H-type TiC. - Highlights: •Different structures of TiC are observed during deposited diamond on Ti alloy. •One is common NaCl structure, the other is periodic structure. •The periodic structure is identified as 6H-type by HRTEM. •Carbon vacancies are verified to always exist in the TiC phase. •The precipitation of 6H-type TiC is mainly affected by interfacial stress.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Divergence study and emittance measurements for the electron beam emitted from a diamond pyramid

This paper reports the results of a divergence study and emittance measurements for an electron beam emitted from a single diamond pyramid in a sparse diamond field-emitter array (DFEA) cathode. DFEA cathodes are arrays of micrometer scale diamond pyramids with nanometer scale tips. A single diamond pyramid produces currents as high as 10 μA from a small surface area. DFEA cathodes are expected to be a good beam source for compact dielectric laser accelerators. For the electron beam divergence experiment, we have designed and assembled a test stand consisting of a DFEA cathode, a mesh anode, and a screen. We measured current and the size of the beam on the screen as functions of the distance between the cathode and the anode, the size of a pyramid’s base, and applied voltage on the cathode. In order to perform beam emittance measurements, we designed and fabricated a magnetic lens to be placed between the mesh and the screen. By measuring the size of the beam for different distances between the lens and the screen, we estimate the beam’s emittance. Here, we also simulated the electron beam dynamics with Computer Simulation Technology Studio and General Particle Tracer codes. Experimentally measured divergence angles and normalized transverse emittance show good agreement with simulations.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Extensively Microtwinned Diamond with Nanolaminates of Lonsdaleite Formed by Flash Laser Heating of Glassy Carbon

Diamond’s unique properties on the nanoscale make it one of the most important materials for use in biosensors and quantum computing and for components that can withstand the harsh environments of space. We synthesize oriented, faceted diamond particles by flash laser heating of glassy carbon at 16 GPa and 2300 K. Detailed transmission electron microscopy shows them to consist of a mosaic of diamond nanocrystals frequently joined at twin boundaries forming microtwins. Striking 3-fold translational periodicity was observed in both imaging and diffraction. This periodicity was shown to originate from nanodimensional wedge-shaped overlapping regions of twinned diamond and not from a possible 9R polytype, which has also been reported in other group IVa elements and water ice. Extended bilayers of hexagonal layer stacking were observed, forming lonsdaleite nanolaminates. In conclusion, the particles exhibited optical fluorescence with a rapid quench time (<1 ns) attributed to their unique twinned microstructure.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Plasmonic Diamond Membranes for Ultrafast Silicon Vacancy Emission

Silicon vacancy centers (SiVs) in diamond have emerged as a promising platform for quantum sciences due to their excellent photostability, minimal spectral diffusion, and substantial zero-phonon line emission. However, enhancing their slow nanosecond excited-state lifetime by coupling to optical cavities remains an outstanding challenge, as current demonstrations are limited to ~10-fold. Here, we couple negatively charged SiVs to sub-diffraction-limited plasmonic cavities and achieve an instrument-limited ≤8 ps lifetime, corresponding to a 135-fold spontaneous emission rate enhancement and a 19-fold photoluminescence enhancement. Nanoparticles are printed on ultrathin diamond membranes on gold films which create arrays of plasmonic nanogap cavities with ultrasmall volumes. SiVs implanted at 5 and 10 nm depths are examined to elucidate surface effects on their lifetime and brightness. The interplay between cavity, implantation depth, and ultrathin diamond membranes provides insights into generating ultrafast, bright SiV emission for next-generation diamond devices.

Purcell enhancement↗
DOE OSTI2025

Heterogenous Integration of Boron-Doped p -Diamond with Monolayer n -MoS 2 for PN Junctions Operating at Room Temperature

Diamond has tremendous potential for power electronics, due to its superior thermal conductivity, large electric field strength, and high carrier mobilities. However, the absence of a reliable room temperature n-type transport has impeded any advancements in diamond-based electronics. Here, we circumvent this bottleneck by integrating n-type two-dimensional (2D) monolayers of molybdenum disulfide (MoS 2 ) with boron doped p-type single crystal diamond and demonstrate 2D/3D heterostructure-based PN junction diodes that operate at room temperature with excellent rectification characteristics. Our diodes achieve a maximum forward current density (J D ) of ∼4000 A/cm 2 , an ideality factor (η) value of ∼3.7, and a rectification ratio (RR) of 10 6 . We find that the origin of current rectification stems from the interlayer recombination of majority carriers driven by direct tunnelling (DT) and Fowler Nordheim (FN) tunnelling mechanisms. In conclusion, our demonstration can open new avenues for diamond-based power electronics through its integration with 2D materials.

2D/3D integration↗
DOE OSTI2013

Enhanced p-type conduction of B-doped nanocrystalline diamond films by high temperature annealing

We report the enhanced p-type conduction with Hall mobility of 53.3 cm{sup 2} V{sup -1} s{sup -1} in B-doped nanocrystalline diamond (NCD) films by 1000 Degree-Sign C annealing. High resolution transmission electronic microscopy, uv, and visible Raman spectroscopy measurements show that a part of amorphous carbon grain boundaries (GBs) transforms to diamond phase, which increases the opportunity of boron atoms located at the GBs to enter into the nano-diamond grains. This phase transition doping is confirmed by the secondary ion mass spectrum depth profile results that the concentration of B atoms in nano-diamond grains increases after 1000 Degree-Sign C annealing. It is also observed that 1000 Degree-Sign C annealing improves the lattice perfection, reduces the internal stress, decreases the amount of trans-polyacetylene, and increases the number or size of aromatic rings in the sp{sup 2}-bonded carbon cluster in B-doped NCD films. These give the contributions to improve the electrical properties of 1000 Degree-Sign C annealed B-doped NCD films.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Electronic properties of graphene-single crystal diamond heterostructures

Single crystal diamond has been used as a substrate to support single layer graphene grown by chemical vapor deposition methods. It is possible to chemically functionalise the diamond surface, and in the present case H-, F-, O-, and N-group have been purposefully added prior to graphene deposition. The electronic properties of the resultant heterostructures vary strongly; a p-type layer with good mobility and a band gap of ∼0.7 eV is created when H-terminated diamond layers are used, whilst a layer with more metallic-like character (high carrier density and low carrier mobility) arises when N(O)-terminations are introduced. Since it is relatively easy to pattern these functional groups on the diamond surface, this suggests that this approach may offer an exciting route to 2D device structures on single layer graphene sheets.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

New route to the fabrication of nanocrystalline diamond films

Nanocrystalline diamond (NCD) thin films offer applications in various fields, but the existing synthetic approaches are cumbersome and destructive. A major breakthrough has been achieved by our group in the direction of a non-destructive, scalable, and economic process of NCD thin-film fabrication. Here, we report a cheap precursor for the growth of nanocrystalline diamond in the form of paraffin wax. We show that NCD thin films can be fabricated on a copper support by using simple, commonplace paraffin wax under reaction conditions of Hot Filament Chemical Vapor Deposition (HFCVD). Surprisingly, even the presence of any catalyst or seeding that has been conventionally used in the state-of-the-art is not required. The structure of the obtained films was analyzed by scanning electron microscopy and transmission electron microscopy. Raman spectroscopy and electron energy-loss spectroscopy recorded at the carbon K-edge region confirm the presence of nanocrystalline diamond. The process is a significant step towards cost-effective and non-cumbersome fabrication of nanocrystalline diamond thin films for commercial production.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Native and induced triplet nitrogen-vacancy centers in nano- and micro-diamonds: Half-field electron paramagnetic resonance fingerprint

Multiple frequency electron paramagnetic resonance (EPR) study of small (4–25 nm) nanodiamonds obtained by various dynamic synthesis techniques reveals systematic presence in the half-field (HF) region a distinctive doublet fingerprint consisting of resolved g{sub HF1} = 4.26 and g{sub HF2} = 4.00 signals. This feature is attributed to “forbidden” ΔM{sub S} = 2 transitions in EPR spectra of two native paramagnetic centers of triplet (S = 1) origin designated as TR1 and TR2, characterized by zero field splitting values D{sub 1} = 0.0950 ± 0.002 cm{sup −1} and D{sub 2} = 0.030 ± 0.005 cm{sup −1}. Nanodiamonds of ∼50 nm particle size, obtained by crushing of Ib type nitrogen rich synthetic diamonds, show only HF TR2 signal whereas the same sample undergone high energy (20 MeV) electron irradiation and thermal annealing demonstrates rise of HF TR1 signal. The same HF TR1 signals appear in the process of fabrication of fluorescent nanodiamonds from micron-size synthetic diamond precursors. Results obtained allow unambiguous attribution of the half-field TR1 EPR signals with g{sub HF1} = 4.26, observed in nano- and micron-diamond powders, to triplet negatively charged nitrogen-vacancy centers. These signals are proposed as reliable and convenient fingerprints in both qualitative and quantitative study of fluorescent nano- and micron-diamonds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Ferromagnetic ordering of Cr and Fe doped p-type diamond: An ab initio study

Ferromagnetic ordering of transition metal dopants in semiconductors holds the prospect of combining the capabilities of semiconductors and magnetic systems in single hybrid devices for spintronic applications. Various semiconductors have so far been considered for spintronic applications, but low Curie temperatures have hindered room temperature applications. We report ab initio DFT calculations on the stability and magnetic properties of Fe and Cr impurities in diamond, and show that their ground state magnetic ordering and stabilization energies depend strongly on the charge state and type of co-doping. We predict that divacancy Cr{sup +2} and substitutional Fe{sup +1} order ferromagnetically in p-type diamond, with magnetic stabilization energies (and magnetic moment per impurity ion) of 16.9 meV (2.5 μ{sub B}) and 33.3 meV (1.0 μ{sub B}), respectively. These magnetic stabilization energies are much larger than what has been achieved in other semiconductors at comparable impurity concentrations, including the archetypal dilute magnetic semiconductor GaAs:Mn. In addition, substitutional Fe{sup +1} exhibits a strong half-metallic character, with the Fermi level crossing bands in only the spin down channel. These results, combined with diamond’s extreme properties, demonstrate that Cr or Fe dopedp-type diamond may successfully be considered in the search for room temperature spintronic materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces

Synthetic diamond production is a key to the development of quantum metrology and quantum information applications of diamond. The major quantum sensor and qubit candidate in diamond is the nitrogen-vacancy (NV) color center. This lattice defect comes in four different crystallographic orientations leading to an intrinsic inhomogeneity among NV centers, which is undesirable in some applications. Here, we report a microwave plasma-assisted chemical vapor deposition diamond growth technique on (111)-oriented substrates, which yields perfect alignment (94% ± 2%) of as-grown NV centers along a single crystallographic direction. In addition, clear evidence is found that the majority (74% ± 4%) of the aligned NV centers were formed by the nitrogen being first included in the (111) growth surface and then followed by the formation of a neighboring vacancy on top. The achieved homogeneity of the grown NV centers will tremendously benefit quantum information and metrology applications.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample

We show that the orientation of nitrogen-vacancy (NV) defects in diamond can be efficiently controlled through chemical vapor deposition growth on a (111)-oriented diamond substrate. More precisely, we demonstrate that spontaneously generated NV defects are oriented with a ∼97% probability along the [111] axis, corresponding to the most appealing orientation among the four possible crystallographic axes. Such a nearly perfect preferential orientation is explained by analyzing the diamond growth mechanism on a (111)-oriented substrate and could be extended to other types of defects. This work is a significant step towards the design of optimized diamond samples for quantum information and sensing applications.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Superconducting nanowire single photon detector on diamond

Superconducting nanowire single photon detectors are fabricated directly on diamond substrates and their optical and electrical properties are characterized. Dark count performance and photon count rates are measured at varying temperatures for 1310 nm and 632 nm photons. A multi-step diamond surface polishing procedure is reported, involving iterative reactive ion etching and mechanical polishing to create a suitable diamond surface for the deposition and patterning of thin film superconducting layers. Using this approach, diamond substrates with less than 300 pm Root Mean Square surface roughness are obtained.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗