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NASA NTRS1983

GaAs solar cells for concentrator systems in space

Cells for operation in space up to more than 100 suns were made, and an AMO efficiency of 21% at 100 suns with these cells was obtained. The increased efficiency resulted not only from the higher open circuit voltage associated with the higher light intensity (higher short circuit current); it also benefitted from the increase in fill factor caused by the lower relative contribution of the generation recombination current to the forward bias current when the cell's operating current density is increased. The experimental cells exhibited an AMO efficiency close to 16% at 200 C. The prospect of exploiting this capability for the continuous annealing of radiation damage or for high temperature missions (e.g., near Sun missions) remains therefore open. Space systems with concentration ratios on the order of 100 suns are presently under development. The tradeoff between increased concentration ratio and increased loss due to the cell's series resistance remains attractive even for space applications at a solar concentrator ratio of 100 suns. In the design of contact configuration with low enough series resistance for such solar concentration ratios, the shallow junction depth needed for good radiation hardness and the thin AlGaAs layer thickness needed to avoid excessive optical absorption losses have to be retained.

Loo, R. Y.↗

DOE OSTI2020

The Critical Role of AlInP Window Design in III–V Rear-Emitter Solar Cells

This article highlights the critical role of window design on short circuit carrier collection in rear-emitter solar cells, as demonstrated through modeling and experiment using metamorphic GaAs y P 1-y . Ultimately, if the window design is not carefully considered, surface depletion caused by Fermi level pinning at the window/air interface can extend into regions of active collection resulting in a large increase in effective window/base interface recombination velocity. This was experimentally shown here to result in a potential AM1.5G photocurrent loss of 8.1 mA/cm 2 , or nearly 50%, based on integrated internal quantum efficiency (IQE). Associated IQE modeling and curve fitting indicate that the effective IRV at the GaAs 0.75 P 0.25 /Al 0.64 In 0.36 P interface is increased by multiple orders of magnitude when the window is not sufficiently thick or doped to fully contain the surface depletion to within the window layer. Calculations of the surface depletion depth as a function of doping and the surface Fermi pinning energy level provides insight into the fundamental limits of window thickness. As a result, this allows the estimation of the Al 0.64 In 0.36 P surface pinning level to be at least 1.25 eV below the conduction band edge, or in the bottom half of the bandgap.

14 SOLAR ENERGY↗

DOE OSTI2026

Temperature-dependent dielectric function of tantalum nitride formed by atomic layer deposition for tunnel barriers in Josephson junctions

Here, we report the dielectric functions of insulating tantalum nitride (TaN) films deposited by atomic layer deposition (ALD) on 300 mm Si/SiO 2 substrates to evaluate their suitability as tunnel barriers in tantalum-based Josephson junctions (JJs) for superconducting quantum circuits. Temperature-dependent ellipsometric angles were measured for ALD TaN films with nominal thicknesses of 13 and 25 nm at an incidence angle of 70°, over photon energy ranges of 0.03–0.7 eV (80–300 K) and 0.5–6.5 eV (80–600 K). These data were used to develop a dispersion model for insulating ALD TaN that incorporates a Tauc–Lorentz oscillator with an optical bandgap of 1.5–1.8 eV to describe interband transitions. The extracted dielectric function shows insulating behavior (mid-infrared transparency) at all temperatures and for both film thicknesses tested. In particular, ALD TaN does not exhibit infrared absorption due to free carriers, even at elevated temperatures, consistent with the insulating behavior required for a JJ tunnel barrier. Results from transmission electron microscopy (including selected area electron diffraction) and x-ray diffraction are also discussed. Sputter depth-profile x-ray photoelectron spectroscopy shows an N/Ta ratio of ∼1.2 throughout the film. The lower bandgap, low roughness, and thermal stability of ALD TaN compared to AlO x suggest the possibility of fabricating JJs with thicker barriers while achieving critical current densities required for qubits, enabling improved thickness and composition control, reduced topography, and resistance to aging.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Impact of the Annealing Temperature on the Local Se Distribution and Optical Properties in CdSexTe1-x Solar Cells by Multimodal X-ray Microscopy

The introduction of Se in CdTe solar-cell absorbers has led to multiple beneficial effects in the devices, including an increased short-circuit current and an extended charge-carrier lifetime. A critical manufacturing step of CdSexTe1-x solar cells is CdCl2 annealing at high temperatures, during which Se diffuses through the absorber layer. Understanding the local Se distribution in the absorber and its impact on optical properties of the material is key for the further development of this thin-film solar cell technology. In a multimodal x-ray scanning microscopy approach, we investigated the impact of the annealing temperature of CdSexTe1-x solar cells on the Se distribution and on optical characteristics of the material. For this purpose, we exploited an upgraded x-ray excited optical luminescence (XEOL) detection unit that enables simultaneous spectrally and temporally resolved XEOL mapping at synchrotron facilities that are ideal for studying thin-film solar-cell materials with hard x-rays featuring high penetration depth and lateral resolution.

14 SOLAR ENERGY↗

DOE OSTI2024

What the Flicker is going on here? Temporal Light Modulation in Automotive Lighting

Temporal light modulation (TLM), colloquially known as “flicker,” is once again an issue in almost all lighting applications, due to widespread adoption of LED and OLED sources and their driving electronics. A subset of LED/OLED lighting systems delivers problematic TLM, often in specific types of residential, commercial, outdoor, and vehicular lighting. Dashboard displays, touchscreens, marker lights, taillights, daytime running lights, interior lighting, etc. frequently use PWM circuits to achieve different luminances for different times of day and user visual adaptation levels. The resulting TLM waveforms and viewing conditions can result in distraction and disorientation, nausea, cognitive effects, and serious health consequences in some populations, occurring with or without the driver, passenger, or pedestrian consciously “seeing” the flicker. There are three visual responses to TLM: direct flicker, the stroboscopic effect, and phantom array effect (also called the “beads effect”). Metrics for the first two have limitations in both calculation and application. The phantom array effect has no established visibility measure at all, and this is the effect most associated with vehicular flicker because of the widespread use of PWM. Conventional wisdom from the recent past, especially concerning acceptable driver frequency ranges, needs to be reconsidered and replaced with improved guidelines to protect health and comfort. Four principal TLM waveform characteristics affect TLM visibility: frequency, modulation depth, duty cycle, and waveshape. This paper proposes much higher frequency operation if PWM control cannot be avoided; but it may be possible to modify the four principal waveform characteristics together in order to achieve reduced TLM visibility and improved health and comfort.

flicker, TLM, temporal light modulation, automotiv↗

NASA NTRS2018

NASA Feedback to DLA Land & Maritime Moratorium on Wafer Fab Audits

On September 29, 2017 the Defense Logistics Agency (DLA), Land and Maritime, announced that on September 1, 2017 they had begun a moratorium on the auditing of wafer fabrication facilities (fabs) used in the production of semiconductor die for military (MIL) qualified integrated circuits and discrete semiconductors (transistors and diodes). The announcement said the moratorium would last for six months initially and would apply to all wafer fabs qualified to MIL-PRF-19500 (discretes) and MIL-PRF-38535 (ICs) located, onshore or offshore. The stated rationale behind this action was to give DLA time to evaluate the risk of modifying current surveillance practices across 70+ Federal Stock Classes (FSC) under the jurisdiction of the DLA Qualifying Activity (VQ). The objective was to free up the resources used in these audits so they could be redirected towards audits of other commodities which were under resourced, notably connectors. In the announcement letter, DLA-VQ requested data from the community to assist with decisions on wafer fab re-audit cycle modifications. NASA used available information on current and historical audit schedules to gather such data and analyzed it to provide an in-depth understanding of the impact of locations, part types, in-house or out-of-house fabs on those schedules over time. This presentation provides the results of NASA's data analysis and suggest some changes to auditing practices that could increase efficient use of resources without significant increases in risk.

fab audits↗

DOE OSTI2025

Unified Model of Current-Limiting Grid-Forming Inverters for Large-Signal Analysis

Grid-forming (GFM) inverters can hardly withstand any overloading. As such, GFM inverters need a current limiter in their control system to avoid hardware damage during overloading or grid disturbances. When the current limiter is engaged for inverter protection, however, it dynamically changes the inverter output impedance, which can significantly affect the system behavior against large disturbances. For example, when the current limiter curtails the output power, the primary controller of the GFM inverter-which generates the voltage and angle reference-is prone to losing synchronization with the grid. This can cause large-signal instability in the network. This paper presents a unified GFM current-limiter model to gain a deeper understanding of the impact of the GFM inverter current limiting on large-signal instability and other system behaviors. The unified model captures several well-known current limiters for GFM inverters, and it reveals their large-signal equivalence characterized by the limiter angle. We use the unified model to present in-depth insights into the driving forces that cause large-signal instability in GFM inverter-driven grids. Further, this paper illustrates that the unified model can be used as a tool for assessing the system-level impacts of various GFM current-limiter designs during grid disturbances. Using numerical, analytical, electromagnetic transient models, and a hardware setup, the validity of the unified model is evaluated.

24 POWER TRANSMISSION AND DISTRIBUTION↗

NASA NTRS2006

Neuro-Prosthetic Implants With Adjustable Electrode Arrays

Brushlike arrays of electrodes packaged with application-specific integrated circuits (ASICs) are undergoing development for use as electronic implants especially as neuro-prosthetic devices that might be implanted in brains to detect weak electrical signals generated by neurons. These implants partly resemble the ones reported in Integrated Electrode Arrays for Neuro-Prosthetic Implants (NPO-21198), NASA Tech Briefs, Vol. 27, No. 2 (February 2003), page 48. The basic idea underlying both the present and previously reported implants is that the electrodes would pick up signals from neurons and the ASICs would amplify and otherwise preprocess the signals for monitoring by external equipment. The figure presents a simplified and partly schematic view of an implant according to the present concept. Whereas the electrodes in an implant according to the previously reported concept would be microscopic wires, the electrodes according to the present concept are in the form of microscopic needles. An even more important difference would be that, unlike the previously reported concept, the present concept calls for the inclusion of microelectromechanical actuators for adjusting the depth of penetration of the electrodes into brain tissue. The prototype implant now under construction includes an array of 100 electrodes and corresponding array of electrode contact pads formed on opposite faces of a plate fabricated by techniques that are established in the art of microelectromechanical systems (MEMS). A mixed-signal ASIC under construction at the time of reporting the information for this article will include 100 analog amplifier channels (one amplifier per electrode). On one face of the mixed-signal ASIC there will be a solder-bump/micro-pad array that will have the same pitch as that of the electrode array, and that will be used to make the electrical and mechanical connections between the electrode array and the ASIC. Once the electrode array and the ASIC are soldered together, the remaining empty space between them will be filled with a biocompatible epoxy, the remaining exposed portions of the ASIC will be covered with micromachined plates for protection against corrosive bodily fluids, and then the ASIC and its covering micromachined plates will be coated with parylene

Whitacre, Jay↗

NASA NTRS2003

Curved Focal-Plane Arrays Using Back-Illuminated High-Purity Photodetectors

Curved-focal-plane arrays of back-illuminated silicon-based photodetectors are being developed. The basic idea is to improve the performance of an imaging instrument and simplify the optics needed to obtain a given level of performance by making an image sensor (e.g., a photographic film or an array of photodetectors) conform to a curved focal surface, instead of following the customary practice of designing the optics to project an image onto a flat focal surface. Eyes are natural examples of optical systems that have curved focal surfaces on which image sensors (retinas) are located. One prior approach to implementation of this concept involves the use of curved-input-surface microchannel plates as arrays of photodetectors. In comparison with microchannel plates, these curved-focal-plane arrays would weigh less, operate at much lower voltages, and consume less power. It should also be possible to fabricate the proposed devices at lower cost. It would be possible to fabricate an array of photodetectors and readout circuitry in the form of a very-large-scale integrated (VLSI) circuit on a curved focal surface, but it would be difficult and expensive to do so. In a simple and inexpensive alternate approach, a device (see figure) would have (1) a curved back surface, onto which light would be focused; and (2) a flat front surface, on which VLSI circuitry would be fabricated by techniques that are well established for flat surfaces. The device would be made from ultrapure silicon, in which it is possible to form high-resistivity, thick photodetectors that are fully depleted through their thicknesses. (As used here, "thick means having a thickness between a fraction of a millimeter and a few millimeters.) The back surface would be polished to the curvature of the focal surface of the intended application. To enable the collection of charge carriers excited by photons near the back surface or in the bulk of the device, it would be necessary to form a transparent or semitransparent back-surface electrode, possibly by delta doping. [Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac function (impulse function): the dopant is concentrated in a very thin layer - nominally, a single atomic layer.]

Nikzad, Shouleh↗

NASA NTRS2010

Electrical Capacitance Volume Tomography with High-Contrast Dielectrics

The Electrical Capacitance Volume Tomography (ECVT) system has been designed to complement the tools created to sense the presence of water in nonconductive spacecraft materials, by helping to not only find the approximate location of moisture but also its quantity and depth. The ECVT system has been created for use with a new image reconstruction algorithm capable of imaging high-contrast dielectric distributions. Rather than relying solely on mutual capacitance readings as is done in traditional electrical capacitance tomography applications, this method reconstructs high-resolution images using only the self-capacitance measurements. The image reconstruction method assumes that the material under inspection consists of a binary dielectric distribution, with either a high relative dielectric value representing the water or a low dielectric value for the background material. By constraining the unknown dielectric material to one of two values, the inverse math problem that must be solved to generate the image is no longer ill-determined. The image resolution becomes limited only by the accuracy and resolution of the measurement circuitry. Images were reconstructed using this method with both synthetic and real data acquired using an aluminum structure inserted at different positions within the sensing region. The cuboid geometry of the system has two parallel planes of 16 conductors arranged in a 4 4 pattern. The electrode geometry consists of parallel planes of copper conductors, connected through custom-built switch electronics, to a commercially available capacitance to digital converter. The figure shows two 4 4 arrays of electrodes milled from square sections of copper-clad circuit-board material and mounted on two pieces of glass-filled plastic backing, which were cut to approximately square shapes, 10 cm on a side. Each electrode is placed on 2.0-cm centers. The parallel arrays were mounted with the electrode arrays approximately 3 cm apart. The open ends were surrounded by a metal guard to reduce the sensitivity of the electrodes to outside interference and to help maintain the spacing between the arrays. Other uses for this innovation potentially include quantifying the amount of commodity remaining in the fuel and oxidizer tanks while on-orbit without having to fire spacecraft engines. Another orbit application is moisture sensing in plant-growth experiments because microgravity causes moisture in soil to distribute itself in unusual ways. At the moment, the hardware and image reconstruction technique may only be of interest to people involved in nondestructive evaluation. The reconstructed image takes almost a full week to reproduce with existing computer power. However, because computer power and speeds follows Moore s Law, execution times are likely to become acceptable within the next five to eight years. The code was written in Mathematica for dedicated use with the ECVT system. In its present form, it is not suitable to be used directly as a consumer product. However, the code could be likely improved by rewriting it in a compiled language such as C or Fortran.

Nurge, Mark↗

DOE OSTI2022

Nitrogen plasma passivated niobium resonators for superconducting quantum circuits

Microwave loss in niobium metallic structures used for superconducting quantum circuits is limited by a native surface oxide layer formed over a timescale of minutes when exposed to an ambient environment. Here, in this work, we show that nitrogen plasma treatment forms a niobium nitride layer at the metal–air interface, which prevents such oxidation. X-ray photoelectron spectroscopy confirms the doping of nitrogen more than 5 nm into the surface and a suppressed oxygen presence. This passivation remains stable after aging for 15 days in an ambient environment. Cryogenic microwave characterization shows an average filling-factor-adjusted two-level-system loss tangent Fδ TLS of (2.9±0.5)·10 –7 for resonators with a 3 μm center strip and (1.0±0.3)·10 –7 for a 20 μm center strip, exceeding the performance of unpassivated samples by a factor of four.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

NASA NTRS2011

Infrared-Bolometer Arrays with Reflective Backshorts

Integrated circuits that incorporate square arrays of superconducting-transition- edge bolometers with optically reflective backshorts are being developed for use in image sensors in the spectral range from far infrared to millimeter wavelengths. To maximize the optical efficiency (and, thus, sensitivity) of such a sensor at a specific wavelength, resonant optical structures are created by placing the backshorts at a quarter wavelength behind the bolometer plane. The bolometer and backshort arrays are fabricated separately, then integrated to form a single unit denoted a backshort-under-grid (BUG) bolometer array. In a subsequent fabrication step, the BUG bolometer array is connected, by use of single-sided indium bump bonding, to a readout device that comprises mostly a superconducting quantum interference device (SQUID) multiplexer circuit. The resulting sensor unit comprising the BUG bolometer array and the readout device is operated at a temperature below 1 K. The concept of increasing optical efficiency by use of backshorts at a quarter wavelength behind the bolometers is not new. Instead, the novelty of the present development lies mainly in several features of the design of the BUG bolometer array and the fabrication sequence used to implement the design. Prior to joining with the backshort array, the bolometer array comprises, more specifically, a square grid of free-standing molybdenum/gold superconducting-transition-edge bolometer elements on a 1.4- m-thick top layer of silicon that is part of a silicon support frame made from a silicon-on-insulator wafer. The backshort array is fabricated separately as a frame structure that includes support beams and contains a correspond - ing grid of optically reflective patches on a single-crystal silicon substrate. The process used to fabricate the bolometer array includes standard patterning and etching steps that result in the formation of deep notches in the silicon support frame. These notches are designed to interlock with the support beams on the backshort-array structure to provide structural support and precise relative positioning. The backshort-array structure is inserted in the silicon support frame behind the bolometer array, and the notches in the frame serve to receive the support beams of the backshort-array structure and thus determine the distance between the backshort and bolometer planes. The depth of the notches and, thus, the distance between the backshort and bolometer planes, can be tailored to a value between 25 to 300 m adjusting only a few process steps. The backshort array is designed so as not to interfere with the placement of indium bumps for subsequent indium bump-bonding to the multiplexing readout circuitry

Miller, Timothy M.↗

NASA NTRS2011

Operational Parameters, Considerations, and Design Decisions for Resource-Constrained Ion Trap Mass Spectrometers

Mass spectrometers are increasingly finding applications in new and unique areas, often in situations where key operational resources (i.e. power, weight and size) are limited. One such example is the Mars Organic Molecule Analyzer (MOMA). This instrument is a joint venture between NASA and the European Space Agency (ESA) to develop an ion trap mass spectrometer for chemical analysis on Mars. The constraints on such an instrument are significant as are the performance requirements. While the ideal operating parameters for an ion trap are generally well characterized, methods to maintain analytical performance with limited power and system weight need to be investigated and tested. Methods Experiments have been performed on two custom ion trap mass spectrometers developed as prototypes for the MOMA instrument. This hardware consists of quadrupole ion trap electrodes that are 70% the size of common commercial instrumentation. The trapping RF voltage is created with a custom tank circuit that can be tuned over a range of RF frequencies and is driven using laboratory supplies and amplifiers. The entire instrument is controlled with custom Lab VIEW software that allows a high degree of flexibility in the definition of the scan function defining the ion trap experiment. Ions are typically generated via an internal electron ionization source, however, a laser desorption source is also in development for analysis of larger intact molecules. Preliminary Data The main goals in this work have been to reduce the power required to generate the radio frequency trapping field used in an ion trap mass spectrometer. Generally minimizing the power will also reduce the volume and mass of the electronics to support the instrument. In order to achieve optimum performance, commercial instruments typically utilize RF frequencies in the 1 MHz range. Without much concern for power usage, they simply generate the voltage required to access the mass range of interest. In order to reduce the required RF voltage (and power), operation of the ion trap at lower RF frequencies has been investigated. Surprisingly, the performance of the instrument has only been slightly degraded at RF frequencies all the way down to 500 kHz. Mass resolution is relatively stable to this point and depending on the resonant ejection point used, the peak intensity is also quite stable. To date only masses up to m/z 200 have been fully investigated, however, additional studies are planned to verify the performance with higher mass ions. The lower frequency and voltage should reduce the pseudo potential well depth, eventually affecting the trapping efficiency of the instrument -- effect that could manifest itself in significantly limiting the mass range of trapped ions. Other methods to reduce the RF power while maintaining analytical performance are also under investigation. This includes ion ejection at lower q(sub z) values to access a given mass with a lower RF voltage. The loss of mass resolution at lower q(sub eject) points has been measured and current work is underway to leverage scan speed and the use of non-linear resonances in order to counter this trend. The overall trap performance under this range of operating conditions will be presented with a goal of identifying what trade-offs are acceptable.

Danell, Ryan M.↗

NASA NTRS2017

The Resource Prospector Neutron Spectrometer System: RP's Bloodhound

The primary goal of the Resource Prospector Neutron Spectrometer System (NSS) is to locate and characterize hydrogen-bearing volatile deposits, especially subsurface ice, that may exist at the lunar poles. A key objective is to detect water-equivalent hydrogen concentrations of 0.5 wt% or greater while on a moving rover. A second objective is to determine approximate burial depth of enhanced hydrogen-bearing materials up to 1 meter below otherwise dry regolith. The instrument will be carried aboard a landed mobility system at the lunar poles. The instrument operates by measuring the changes in the leakage flux of low energy neutrons out of the regolith. These neutrons are produced by galactic cosmic rays, which are so energetic that they shatter the nuclei in surface materials. The neutrons interact with other nuclei and lose energy, becoming thermalized in the process. Hydrogen is most efficient at thermalizing neutrons owing to protons' similar mass - statistically, neutrons lose half their energy per collision with protons. With hydrogen in the soil, leakage fluxes of neutrons in the 0.5 eV to 500 keV energy range are reduced. A concentration of only1-2 wt% water-equivalent hydrogen results in a decrease in epithermal leakage flux of a factor of two. The leakage flux of thermal neutrons, from 0 to 0.5 eV in energy, can either increase or decrease depending on the hydrogen abundance and stratigraphy. As with the highly successful Lunar Prospector Neutron Spectrometer, the RP NSS detects both thermal and epithermal neutrons by using two helium-3 gas proportional counters, one covered by cadmium and the other uncovered. The former detects only epithermal neutrons with energies above approximately 0.5 eV, the latter detects both thermal (less than 0.5 eV) and epithermal energies (greater than 0.5 eV). When a neutron enters the detector tube and interacts with a helium-3 nucleus, the resulting reaction produces an energetic proton and triton that ionize the gas. The resulting electrons are accelerated toward a high-voltage anode and cascade, amplifying the net charge, which is collected at the anode. The number of electrons produced is proportional to the energy that the triton and proton deposit in the gas. A charge sensitive pre-amplifier converts the total charge to a step voltage output. A shaper amplifier then shapes this step into a uni-polar waveform with peaking time appropriate for the detection depending on the event rate. The integrated shaped waveform, representing the deposited triton/proton energy, is then measured. A histogram, or pulse height analysis, is performed to record the main capture peak and wall effect pulses. A threshold for detection is also required to limit the low amplitude counting rate such as noise floor. The system electronics consists of 2 modules - the Sensor Module (SM) front-end and the Data Processing Module (DPM) back-end circuits. SM is designed as a light-weight and low power front-end housing the two helium-3 proportional counter detectors, preamp and HVPS. It is mounted external to the rover body to detect the thermalized neutron flux with a minimum of host background. The DPM is located inside the rover; it digitizes the SM signals, performs pulse height analysis and accumulates the count rate for each spectral channel. The DPM controls high voltage and thresholding, and sends the science data to the host craft via an RS422 serial asynchronous protocol. The payload host provides all thermal management and control for the SM and DPM.

hydrogen-bearing volatile deposits↗