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At least 37 records · Page 2

Underwater plasma breakdown characteristics with respect to highly pressurized drilling applications

Deep earth drilling is a key technique to extract oil, gas, and geothermal heat from the earth. Many complex energy focusing methods have been explored as an alternative approach to reach these resources but most of them require high energy. However, by utilizing short time span liquid plasma discharges, energy focusing can be achieved within traditional drilling systems. These discharges induce a rapid expansion process and a resulting shockwave. It is believed that this focused energy will lower the required cutting force to progress through the rock. Lowering the required cutting force will allow for lower drill bit wear, quicker rate of penetration, and an overall cost savings of the project. Plasma breakdown characteristics at drilling relevant pressures, ranging from 1 to 350 atm, were studied. A resistance–capacitance circuit with an air gapped spark switch was utilized to generate pulsed plasma between the pressurized electrodes. It was found that the required breakdown voltage increases as the pressure increases. It was also found that a plasma channel formation and an associated breakdown may or may not occur between the electrodes at different pressures due to variation in required breakdown voltages. Breakdown time-lag in the dielectric medium (tap water, 780 μS cm –1 ) increased as the pressure was increased, which indicated a higher voltage drop at higher pressures (>100 atm). The plasma generated cavitation bubble with an associated shockwave occurred as pressures were increased. However, the bubble radius and the bubble duration decreased as the pressure was increased. The plasma generated shockwave speeds fall within the expected speed of sound in water. Lastly, preliminary rock cracking tests were performed on granite at high pressures (340 and 272 atm) and it was found that plasma is able to create cracks in the rock.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Anomalous Redox Features Induced by Strong Covalency in Layered NaTi 1-y V y S 2 Cathodes for Na-Ion Batteries

The rising demand for energy density of cathodes means the need to raise the voltage or capacity of cathodes. Transition metal (TM) doping has been employed to enhance the electrochemical properties in multiple aspects. The redox voltage of doped cathodes usually falls in between the voltage of undoped layered cathodes. However, in this study, we found anomalous redox features in NaTi 1-y V y S 2 . The first discharge platform potential (2.4 V) is significantly higher than that of undoped NaTiS 2 and NaVS 2 (both around 2.2 V), and the energy density is raised by 15%. We speculate that the anomalous voltage is mainly attributed to the strong hybridization in the Ti-V-S system. Ti 3+ and V 3+ undergo charge transfer and form a more stable Ti (t 2g 0 e g 0 ) and V (t 2g 3 e g 0 ) electronic configuration. Our results indicate that higher voltage of cathode materials could be achieved by strong TM-ligand covalency, and this conclusion provides possible opportunities to explore high voltage materials for future layered cathodes.

36 MATERIALS SCIENCE↗

Evaluation of Adaptive Volt-VAR to Mitigate PV Impacts [Slides]

Distributed generation (DG) sources like photovoltaic (PV) systems with advanced inverters are able to perform grid-support functions, like autonomous Volt-VAR that attempts to mitigate voltage issues by injecting or consuming reactive power. However, the Volt-VAR function operates with VAR priority, meaning real power may be curtailed to provide additional reactive power support. Since some locations on the grid may be more prone to higher voltages than others, PV systems installed at those locations may be forced to curtail more power, adversely impacting the value of that PV system. Adaptive Volt-VAR (AVV) could be implemented as an alternative, whereby the Volt-VAR reference voltage changes over time, but this functionality has not been well-explored in the literature. In this work, the potential benefits and grid impacts of AVV were investigated using yearlong quasi-static time-series (QSTS) simulations. After testing a variety of allowable AVV settings, we found that even with aggressive settings AVV resulted in <0.01% real power curtailment and significantly reduced the reactive power support required from the PV inverter compared to conventional Volt-VAR but did not provide much mitigation for extreme voltage conditions. The reactive power support provided by AVV was injected to oppose large deviations in voltage (in either direction), indicating that it could be useful for other applications like reducing voltage flicker or minimizing interactions with other voltage regulating devices.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Phosphonic-Acid-Reinforced Polymer Hole Transport Layers for Deployable p-i-n Perovskite Photovoltaics

The long-term durability prospects of halide perovskite solar cells are rapidly improving; however, the interface between the hole transport layer (HTL) and the perovskite remains a source of degradation. Alone, polymer- or carbazole-based HTLs suffer from incomplete coverage of the underlying indium tin oxide glass, leading to degradation and compromised performance. Here, we show a multi-HTL approach whereby a polymer HTL is reinforced using a phosphonic acid modification leading to better protection of the buried perovskite interface and more columnar growth of perovskite film, resulting in an ~40-mV open-circuit voltage (VOC) improvement indicative of suppressed interfacial recombination across multiple p-i-n device architectures. Solar cells with this reinforced HTL show higher tolerance to several accelerated stress tests. We report, among the best durabilities for unencapsulated cells, a T90 ~3,000 h (T80 ~5,900 h) at 65 degrees C under continuous 1.2 sun AM 1.5G illumination and maximum power point tracking, representing a nearly 4-fold increase compared with [2-(9H-carbazol-9-yl)ethyl]phosphonic acid (2PACz)-only devices. Furthermore, we deployed a device with this reinforced HTL on a cube satellite, with long-duration operational space testing results exceeding T80 for the complete mission duration of ~100 days in low Earth orbit.

14 SOLAR ENERGY↗

On the mechanism of performance improvement of electroactive polyvinyl chloride (PVC) gel actuators via conductive fillers

Abstract The electromechanical actuation of transparent plasticized polyvinyl chloride (PVC) gels with conductive fillers were studied. The effects of functionalized carbon nanotubes (CNTs) and 1-butyl-3-methylimidazolium tetrafluoroborate ([Bmim]BF 4 ) ionic liquid (IL) on both the electrical conduction and dielectric processes within PVC gels were investigated, and the differences between the two were clarified. Both CNTs and IL were shown to increase the conductivity of the gels and produce larger electromechanical transduction of a contraction actuator, but only CNTs were shown to increase the electrostatic adhesion force of the PVC gels. The addition of charge carriers to the gel via the inclusion of ILs was shown to significantly reduce the conductivity relaxation time, and the transient current upon voltage polarity reversal indicated multiple peaks corresponding to the introduction of carriers with different polarities and mobilities into the gel. This is believed to cause a screening effect, reducing the charge accumulation at the anode that is the foundational basis for PVC gels’ actuation mechanism. A recommendation for preferable conductive fillers for various applications is made.

36 MATERIALS SCIENCE↗

Condition monitoring of permanent magnet AC machines for all-electric transportation systems: State of the art

The current state of the art on emerging and efficient techniques for condition monitoring of permanent magnet (PM) alternating-current (AC) machines deployed in electric vehicle (EV) applications is presented. The discussion includes the most common and specific types of faults in PM motors, such as rotor demagnetisation and stator inter-turn faults, respectively. Fault indicators, such as voltage (v s ) and current (i s ) signals and machine signatures based on motor back electromotive force (EMF) (E B ) and magnetic flux (φ), are taken into account as a measuring quantity in diagnosing motor faults. Other signatures, including thermal analysis, acoustic noise, and vibrations, are also illustrated as some of the emerging techniques in estimating the performance of EV motors while under operations. In addition, various fault modelling methods, condition monitoring techniques, and comprehensive approaches applied in diagnosing the effect of machine faults during its incipient stages are illustrated. Since most of the fault diagnostic techniques discussed here include only machine-based quantities as fault indices/indicators, the provided solutions are therefore found to be more reliable and accurate for diagnosing the motor faults. This comprehensive review study is inclusive of the existing fault diagnostic techniques, which are currently employed in industrial and commercial practices, in addition to the new methodologies proposed by the authors. All the given condition monitoring schemes therefore seem significantly vital in estimating the state of health of PM AC machines while under operation in all-electric transportation systems.

33 ADVANCED PROPULSION SYSTEMS↗

Electronic and optical properties of Zn-doped β-Ga 2 O 3 Czochralski single crystals

β-Ga 2 O 3 has several soluble deep acceptors that impart insulating behavior. In this study, we investigate Zn doping (0.25at.%) in bulk Czochralski and vertical gradient freeze β-Ga 2 O 3 . Representative crystals were assessed for orientation (electron backscatter diffraction and Raman spectroscopy), purity (glow discharge mass spectrometry and secondary ion mass spectrometry), optical properties (ultraviolet to near infrared absorption), and electrical properties (resistivity and current–voltage). Purity measurements indicate that Zn evaporation is insufficient to inhibit doping of Zn into β-Ga 2 O 3 . Hybrid functional calculations show Zn substitutes nearly equally on tetrahedral and octahedral sites, with less than ~0.1eV preference for the octahedral (Ga II ) site. Furthermore, calculations show that Zn Ga acts as a deep acceptor with trapping levels ~1.3 and ~0.9eV above the valence band for one and two holes, respectively. The solubility and electronic behavior of Zn dopants are consistent with measured concentrations >1×10 18 atoms/cm 3 and electrical measurements that show resistivity 10 11 –10 13 Ωcm, with no p-type conduction.

36 MATERIALS SCIENCE↗

Identification and characterization of deep nitrogen acceptors in β-Ga 2 O 3 using defect spectroscopies

The ability to achieve highly resistive beta-phase gallium oxide (β-Ga 2 O 3 ) layers and substrates is critical for β-Ga 2 O 3 high voltage and RF devices. To date, the most common approach involves doping with iron (Fe), which generates a moderately deep acceptor-like defect state located at E C -0.8 eV in the β-Ga 2 O 3 bandgap. Recently, there has been growing interest in alternative acceptors, such as magnesium (Mg) and nitrogen (N), due to their predicted deeper energy levels, which could avoid inadvertent charge modulation during device operation. In this work, a systematic study that makes direct correlations between the introduction of N using ion implantation and the observation of a newly observed deep level at E C -2.9 eV detected by deep-level optical spectroscopy (DLOS) is presented. The concentration of this state displayed a monotonic dependence with N concentration over a range of implant conditions, as confirmed by secondary ion mass spectrometry (SIMS). With a near 1:1 match in absolute N and E C -2.9 eV trap concentrations from SIMS and DLOS, respectively, which also matched the measured removal of free electrons from capacitance-voltage studies, this indicates that N contributes a very efficiently incorporated compensating defect. Density functional theory calculations confirm the assignment of this state to be an N (0/-1) acceptor with a configuration of N occupying the oxygen site III [N O(III) ]. The near ideal efficiency for this state to compensate free electrons and its location toward the midgap region of the β-Ga 2 O 3 bandgap demonstrates the potential of N doping as a promising approach for producing semi-insulating β-Ga 2 O 3 .

36 MATERIALS SCIENCE↗

Evaluating Recombination Mechanisms in RbF Treated Cu(In${}_\mathrm{x}$Ga$_\mathrm{1-x}$)Se$_{2}$ Solar Cells

Rubidium fluoride (RbF) postdeposition treatment (PDT) has been shown to improve the performance of Cu(In x Ga 1-x )Se 2 (CIGS) photovoltaic devices. Here, in this study, temperature-dependent current voltage (JVT) and time-resolved photoluminescence (TRPL) experiments were combined with modeling using the solar cell capacitance simulator (SCAPS) computer code to investigate the effect of the RbF PDT. Two devices, one as-deposited and one with RbF PDT, were deposited by a three stage coevaporation process. JVT measurements suggest the dominant recombination mechanism may be tunneling-enhanced recombination via bandtail states, but that defect states in the bandgap can also be important. RbF PDT is shown to decrease the characteristic energy of the bandtails. TRPL data show an increase in the minority carrier lifetime after RbF PDT, leading to an improved open-circuit voltage. SCAPS modeling indicates that the dominant recombination mechanism is dependent on the specific defect makeup of a device, suggesting that small changes in processing conditions can impact device behavior. This explains the observation that, for some devices, defect states in the gap dominate while others, as is the case here, appear to be dominated by bandtails.

14 SOLAR ENERGY↗

Event Screening Methods for the Eastern Interconnection Situational Awareness and Monitoring System (ESAMS)

The Eastern Interconnection Situational Awareness and Monitoring System (ESAMS) is a tool developed to explore the applications and advantages of sharing phasor measurement unit (PMU) data among operating entities. An initial conclusion from testing was that detected events required further screening before being reported to ensure that events would be of interest to system operators. The methods described in this report were integrated into ESAMS to meet this need. First, an event is screened for whether the change in voltage angle measurements indicates that the detected disturbance is sufficiently large. Next, an event is classified to determine if it was related to a loss of generation. Finally, a neural network is used to determine if the system’s response to the disturbance is normal or abnormal. These methods were tested with one month of field-measured PMU data. Results indicate that the additional information provided by these additional screening tools will improve selection of events for inclusion in the daily event reports automatically generated by ESAMS.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Position sensing circuit for an electrostatically driven MEMS device

The present disclosure relates to a system for detecting movement of a microelectromechanical system (MEMS) device. The system uses a drive voltage signal source for generating a low frequency drive voltage signal for driving the MEMS device. An excitation signal source may be used for generating an excitation signal which is also applied to the MEMS device. The excitation signal has a frequency which is above a physical response capability of the MEMS device, such that operation of the MEMS device is not significantly affected by the excitation signal. A sensing impedance is used to help generate a signal which is responsive to the capacitance of the MEMS device. The capacitance of the MEMS device changes in response to movement of the MEMS device. An output subsystem is provided which responds to changes sensed by the sensing impedance, and which produces an output voltage signal. A filter filters the output voltage signal to produce a filtered output voltage signal. The filtered output voltage signal is indicative of a position of the MEMS device.

Panas, Robert Matthew↗

Effect of surface functional groups on MXene conductivity

In this work, we report the in-plane electron transport in the MXenes (i.e., within the MXene layers) as a function of composition using the density-functional tight-binding method, in conjunction with the non-equilibrium Green’s functions technique. Our study reveals that all MXene compositions have a linear relationship between current and voltage at lower potentials, indicating their metallic character. However, the magnitude of the current at a given voltage (conductivity) has different trends among different compositions. For example, MXenes without any surface terminations (Ti 3 C 2 ) exhibit higher conductivity compared to MXenes with surface functionalization. Among the MXenes with –O and –OH termination, those with –O surface termination have lower conductivity than the ones with –OH surface terminations. Interestingly, conductivity changes with the ratio of –O and –OH on the MXene surface. Our calculated I–V curves and their conductivities correlate well with transmission functions and the electronic density of states around the Fermi level. The surface composition-dependent conductivity of the MXenes provides a path to tune the in-plane conductivity for enhanced pseudocapacitive performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Screening method for pin diodes used in microwave limiters

A method of testing a PIN diode for a power limiter circuit comprises measuring a reverse bias current of the PIN diode; applying a reverse bias voltage to the PIN diode; increasing the reverse bias voltage until the reverse bias current of the PIN diode reaches a threshold current indicative of a reverse voltage breakdown; and determining whether the reverse bias breakdown voltage of the PIN diode is within an acceptable range of reverse bias breakdown voltages corresponding to a power range at which the power limiter circuit would enter power limiting mode with the PIN diode.

Hanna, Charles John↗

Small-Signal Stability of Grid-Forming Inverters Using Current-Limiting and Frequency Stabilization

This paper presents a small-signal stability analysis of grid-forming (GFM) inverters under current-limiting conditions. It examines how adjustments in virtual impedance angles, implemented through advanced current-limiting and frequency stabilization techniques, influence small-signal stability. This paper studies a GFM inverter control integrating a fictitious power technique stabilizing primary control by adding a virtual power term and a hybrid current limiter integrating virtual impedance in the anti-wind-up feedback with current reference saturation limiting. A small-signal model is developed to assess the impact of virtual impedance angles on GFM inverter dynamics during grid disturbances, such as voltage drops. The findings indicate that although increasing the virtual impedance angle (to make it more inductive) enhances large-signal stability and voltage support during faults, it can induce oscillations and lead to instability if the angle exceeds certain thresholds. Based on the small-signal models, this paper provides design considerations for the current-limiter impedances to ensure reliable GFM inverter behavior under grid disturbances while maintaining small-signal stability.

current limiting↗

Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV

Polarization-induced (Pi) distributed or bulk doping in GaN, with a zero dopant ionization energy, can reduce temperature or frequency dispersions in impurity-doped p–n junctions caused by the deep-acceptor-nature of Mg, thus offering GaN power devices promising prospects. Before comprehensively assessing the benefits of Pi-doping, ideal junction behaviors and high-voltage capabilities should be confirmed. In this work, we demonstrate near-ideal forward and reverse I–V characteristics in Pi-doped GaN power p–n diodes, which incorporates linearly graded, coherently strained AlGaN layers. Hall measurements show a net increase in the hole concentration of 8.9 × 1016 cm−3 in the p-layer as a result of the polarization charge. In the Pi-doped n-layer, a record-low electron concentration of 2.5 × 1016 cm−3 is realized due to the gradual grading of Al0-0.72GaN over 1 μm. The Pi-doped p–n diodes have an ideality factor as low as 1.1 and a 0.10 V higher turn-on voltage than the impurity-doped p–n diodes due to the increase in the bandgap at the junction edge. A differential specific on-resistance of 0.1 mΩ cm2 is extracted from the Pi-doped p–n diodes, similar with the impurity-doped counterpart. The Pi-doped diodes show an avalanche breakdown voltage of ∼1.25 kV, indicating a high reverse blocking capability even without an ideal edge-termination. This work confirms that distributed Pi-doping can be incorporated in high-voltage GaN power devices to increase hole concentrations while maintaining excellent junction properties.

Nomoto, Kazuki↗

The influence of V-defects, leakage, and random alloy fluctuations on the carrier transport in red InGaN MQW LEDs

Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies than violet, blue, and green InGaN LEDs due to a reduction in radiative recombination rates relative to non-radiative recombination rates as the Indium composition increases. Additionally, the larger polarization and band offset barriers between high indium content InGaN quantum wells and GaN quantum barriers increase the forward voltage. In blue and green LEDs, random alloy fluctuations and V-defects play a key role in reducing the forward voltage. When V-defects are present, either naturally or intentionally introduced, they create an alternative path for carrier injection into the MQWs through the V-defect sidewalls. This injection mechanism explains the turn-on voltages of green LEDs. However, in InGaN red LEDs, these two phenomena do not reduce the forward voltage as effectively as in blue and green LEDs, and consequently, the computed forward voltage remains significantly higher than the measured one. Furthermore, currents are observed at low voltages before the turn-on voltage (V<ℏω/e=2.0 V) of red LEDs. To address this, we introduce dislocation-induced tail states in the modeling, suggesting that leakage current through these states may play a significant role both below and at turn-on voltages. The simulation also indicates that leakage carriers below turn-on accumulate, partially diffuse in the QWs, screen the polarization-induced barrier in the low injection regime, and further reduce the forward voltage. Despite these beneficial effects, a drawback of dislocation-induced tail states is the enhanced nonradiative recombination in the dislocation line region. This study provides a detailed analysis of device injection physics in InGaN QW red LEDs and outlines potential optimization strategies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Coupling of Ca 2+ and voltage activation in BK channels through the αB helix/voltage sensor interface

Large-conductance Ca 2+ and voltage-activated K + (BK) channels control membrane excitability in many cell types. BK channels are tetrameric. Each subunit is composed of a voltage sensor domain (VSD), a central pore-gate domain, and a large cytoplasmic domain (CTD) that contains the Ca 2+ sensors. While it is known that BK channels are activated by voltage and Ca 2+ , and that voltage and Ca 2+ activations interact, less is known about the mechanisms involved. In this work we explore these mechanisms by examining the gating contribution of an interface formed between the VSDs and the αB helices located at the top of the CTDs. Proline mutations in the αB helix greatly decreased voltage activation while having negligible effects on gating currents. Analysis with the Horrigan, Cui, and Aldrich model indicated a decreased coupling between voltage sensors and pore gate. Proline mutations decreased Ca 2+ activation for both Ca 2+ bowl and RCK1 Ca 2+ sites, suggesting that both high-affinity Ca 2+ sites transduce their effect, at least in part, through the αB helix. Mg 2+ activation also decreased. The crystal structure of the CTD with proline mutation L390P showed a flattening of the first helical turn in the αB helix compared to wild type, without other notable differences in the CTD, indicating that structural changes from the mutation were confined to the αB helix. These findings indicate that an intact αB helix/VSD interface is required for effective coupling of Ca 2+ binding and voltage depolarization to pore opening and that shared Ca 2+ and voltage transduction pathways involving the αB helix may be involved.

59 BASIC BIOLOGICAL SCIENCES↗

Spatiotemporally resolved measurements of electric field around a piezoelectric transformer using electric-field induced second harmonic (E-FISH) generation

When a piezoelectric transformer (PT) is actuated at its second harmonic frequency by a low input voltage, the generated electric field at the distal end can be sufficient to breakdown the surrounding gas, making them attractive power sources for non-equilibrium plasma generation. Understanding the potential and electric fields produced in the surrounding medium by the PT is important for effectively designing and using PT plasma devices. In this work, the spatiotemporally resolved characteristics of the electric field generated by a PT operating in open air have been investigated using the femtosecond electric field-induced second harmonic generation (E-FISH) method. Here, electric field components were determined by simultaneously conducting E-FISH measurements with the incident laser polarized in two orthogonal directions relative to the PT crystal. Results of this work demonstrate the spatial distribution of electric field around the PT’s output distal end and how it evolves as a function of time. Notably, the strongest electric field appears on the face of the PT’s distal surface, near the top and bottom edges and decreases by approximately 70% over 3 mm. The time delay between the PT’s input voltage and measured electric field indicates that there is an about 0.45 phase difference between the PT’s input voltage and output signal.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗