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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Epitaxial thinning process

A method is described for thinning an epitaxial layer of a wafer that is to be used in producing diodes having a specified breakdown voltage and which also facilitates the thinning process. Current is passed through the epitaxial layer, by connecting a current source between the substrate of the wafer and an electrolyte in which the wafer is immersed. When the wafer is initially immersed, the voltage across the wafer initially drops and then rises at a steep rate. When light is applied to the wafer the voltage drops, and when the light is interrupted the voltage rises again. These changes in voltage, each indicate the breakdown voltage of a Schottky diode that could be prepared from the wafer at that time. The epitaxial layer is thinned by continuing to apply current through the wafer while it is immersed and light is applied, to form an oxide film and when the oxide film is thick the wafer can then be cleaned of oxide and the testing and thinning continued. Uninterrupted thinning can be achieved by first forming an oxide film, and then using an electrolyte that dissolves the oxide about as fast as it is being formed, to limit the thickness of the oxide layer.

Siegel, C. M.↗
NASA NTRS1987

A study of charged particles/radiation damage to VLSI device materials

Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets.

Okyere, John G.↗
DOE OSTI2023

2-Aminoanthracene Crystallization in Its Compatible Polystyrene Block: RAFT Synthesis and Enhanced Charge Retention in Pentacene Transistor Gate Dielectrics

We synthesized polystyrene-block-polyanthrylaminomethylstyrene (PS-b-PAAS) via RAFT reaction and side chain modification where the PAAS block is 50%. By blending 2-aminoanthracene (2AA) with PS-b-PAAS, the co-aggregation behavior of the PAAS block and 2AA within the thin film was observed by optical microscopy (OM) and x-ray diffraction. At 5 and 10 wt% of 2AA within the thin film, OM results showed a clear morphological difference between PS matrix and PS-b-PAAS matrix. Differences in the 2AA excited state lifetime in these matrices were also established using transient absorption spectroscopy (TAS). Blends were used as gate dielectrics in pentacene transistors. We compared characteristic voltage (Vc, an indicator of threshold voltage) before and after charging of PS-b-PAAS blended with unsubstituted PS and both polymers individually blended with 2AA. For blended PS-b-PAAS and PS, as the concentration of PS-b-PAAS increases, the decreased Vc especially with negative charging of the pentacene indicated a larger concentration of charge carriers induced by the dielectric film. The charging experiments also revealed that the unique structure formed by the 2AA/PS-b-PAAS blend significantly affected the charge storage capability of the organic field-effect transistors (OFET). Furthermore, this work demonstrates the novel co-aggregation structure in the dielectrics, and furthermore its impact on charge storage capability in pentacene OFETs.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Voltage stability smart meter for analyzing voltage data and controlling an electrical power source and/or an electric appliance

Systems and methods for voltage stability monitoring and active/reactive power support are disclosed herein. In some embodiments, a smart electric meter of an end user in a grid power system can measure the voltage supplied to the end user via the grid power system, and can analyze the voltage data to detect critical voltage characteristics. The critical voltage characteristics may indicate that a voltage collapse event is likely. The smart electric meter can further estimate a voltage stability margin based on the voltage data. If necessary, the smart electric meter can control an electrical power source and/or an electric appliance positioned at or near the end user to increase the voltage stability margin.

Min, Liang↗
DOE OSTI2022

Voltage Stability Constrained Moving Target Defense Against Net Load Redistribution Attacks

Moving target defense (MTD) using distributed flexible AC transmission system (D-FACTS) devices is a promising defense strategy to detect stealthy false data injection (FDI) attacks against the power system state estimation. However, all existing studies myopically perturb the reactance of D-FACTS lines without considering the system voltage stability. In this paper, we first illustrate voltage instability induced by MTDs in a three-bus system. To address this issue, we further propose a novel MTD framework that explicitly considers system voltage stability by using continuation power flow and voltage stability indices. We mathematically derive the sensitivity matrix of voltage stability index to line impedance, on which an optimization problem for maximizing voltage stability index is formulated. This framework is tested on the IEEE 14-bus and the IEEE 118-bus transmission systems, in which net load redistribution attacks are launched by sophisticated attackers. Here, the simulation results show the effectiveness of the proposed framework in circumventing the voltage instability while maintaining the detection effectiveness of MTD. We conduct case studies with and without the proposed framework under different MTD planning and operational methods. The impacts of the proposed two methods on attack detection effectiveness and system economic metrics are also revealed.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS1997

Arc burst pattern analysis fault detection system

A method and apparatus are provided for detecting an arcing fault on a power line carrying a load current. Parameters indicative of power flow and possible fault events on the line, such as voltage and load current, are monitored and analyzed for an arc burst pattern exhibited by arcing faults in a power system. These arcing faults are detected by identifying bursts of each half-cycle of the fundamental current. Bursts occurring at or near a voltage peak indicate arcing on that phase. Once a faulted phase line is identified, a comparison of the current and voltage reveals whether the fault is located in a downstream direction of power flow toward customers, or upstream toward a generation station. If the fault is located downstream, the line is de-energized, and if located upstream, the line may remain energized to prevent unnecessary power outages.

Russell, B. Don↗
DOE OSTI2022

Electro-Optical Characterization of Arsenic-Doped CdSeTe and CdTe Solar Cell Absorbers Doped in-situ During Close Space Sublimation

Most contemporary device models predict that an acceptor concentration of at least 10^16 cm^-3 is required to reach an open circuit voltage of 1 V in polycrystalline CdTe-based solar cells. While copper has traditionally been used as the de facto p-type dopant in polycrystalline cadmium telluride (CdTe) and cadmium selenide telluride (CdSeTe), reaching high acceptor concentrations has proved to be challenging in such devices due to significant dopant compensation. The acceptor concentration in copper-doped CdTe and CdSeTe typically ranges from 10^13 to 10^15 cm^-3 and routinely exhibit low external radiative efficiencies below 0.01%, limiting their implied voltage (i.e., quasi-Fermi level splitting) to approximately 900 mV. As an alternative to copper, this work explores the use of arsenic as a p-type dopant for CdTe and CdSeTe. Using a novel technique in which a thin layer of arsenic-containing material is deposited and used as a reservoir for arsenic to diffuse into a front layer of previously undoped material, this contribution demonstrates that high external radiative efficiencies are achievable, a direct result of combined high acceptor concentrations and long minority-carrier lifetimes in the absorber. This leads to improved implied voltages, and indicates that As-doping represents a promising pathway towards improving the external voltage of CdSeTe/CdTe solar cells.

cadmium telluride↗
DOE OSTI2020

Broadband Characterization and Circuit Model Development of Transmission-Scale Transformers

This report describes broadband measurements of transmission-scale transformers typical in the electric power grid. This work was performed as part of the EMP Resilient Grid LDRD project at Sandia National Laboratories to generate circuit models that can be used for high-altitude electromagnetic pulse (HEMP) coupling simulations and response predictions. The objective of the work was to obtain characterization data of substation yard equipment across a frequency range relevant to HEMP. Vector network analyzer measurements up to 100 MHz were performed on two power transformers at ABB-Hitachi and a single ITEC potential transformer. Custom cable breakouts were designed to interface with the transformer terminals and provide ground connections to the chassis at the base of the transformer bushings. The three-phase terminals of the power transformers were measured as a common mode impedance using a parallel resistive splitter, and the single-phase terminals of the potential transformer were measured directly. A vector fitting algorithm was used to empirically fit circuit models to the resulting two-port networks and input impedances of the measured objects. Simplified circuit representations of the input impedances were also generated to assess the degree of precision needed for high-altitude electromagnetic pulse response predictions, which were performed in Sandia's XYCE circuit simulator platform. HEMP coupling simulations using the transformer models showed significant reduction in the voltage peak and broadening in the pulse width seen at the power transformer compared to the traveling wave voltage. This indicated the importance of the load condition when defining the coupled insult in an electric power substation. Simplified circuit models showed a similar voltage at the transformer with a smoothed waveform. The presence of potential transformers in the simulation did not significantly change the simulated voltage at the power transformer. Single-port input impedance models were also developed to define load conditions when transfer characteristics were not necessary.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS1976

High power operation of a 30-cm mercury bombardment ion thruster

The nominal input power of a 30-cm mercury bombardment ion thruster is 2.5 kW. A representative 30-cm thruster has been operated at higher power levels by increasing either the ion beam voltage or current. Initial results indicate that higher voltage (high specific impulse) operation requires only minor modifications in thruster design. Higher current (low specific impulse) operation, on the other hand, requires improvements in the capabilities of the discharge chamber and ion optics assembly designs to meet lifetime and/or performance specifications. Experimental data is presented and considerations for high power operation (up to 10 kW) are discussed.

Poeschel, R. L.↗
NASA NTRS1986

Avionics electromagnetic interference immunity and environment

Aircraft electromagnetic spectrum and radio frequency (RF) field strengths are charted, profiling the higher levels of electromagnetic voltages encountered by the commercial aircraft wiring. Selected military, urban, and rural electromagnetic field levels are plotted and provide a comparison of radiation amplitudes. Low frequency magnetic fields and electric fields from 400 H(Z) power systems are charted versus frequency and wire separation to indicate induced voltages on adjacent or neighboring circuits. Induced EMI levels and attenuation characteristics of electric, magnetic, RF fields, and transients are plotted and graphed for common types of wire circuits. The significance of wire circuit returns and shielding is emphasized to highlight the techniques that help block the paths of electromagnetic interference and maintain avionic interface signal quality.

Clarke, C. A.↗
DOE OSTI2022

Oxygen Vacancy Introduction to Increase the Capacity and Voltage Retention in Li‐Excess Cathode Materials

Li‐rich rocksalt oxides are promising cathode materials for lithium‐ion batteries due to their large capacity and energy density, and their ability to use earth‐abundant elements. The excess Li in the rocksalt, needed to achieve good Li transport, reduces the theoretical transition metal redox capacity and introduces a labile oxygen state, both of which lead to increased oxygen oxidation and concomitant capacity loss with cycling. Herein, it is demonstrated that substituting the labile oxygen in Li‐rich cation‐disordered rocksalt materials with a vacancy is an effective strategy to inhibit oxygen oxidation. It is found that the oxygen vacancy in cation‐disordered lithium manganese oxide favors high Li coordination thereby reducing the concentration of unhybridized oxygen states, while increasing the theoretical Mn capacity. It is shown that in the vacancy‐containing compound, synthesized by ball milling, the Mn valence is lowered to less than +3, providing access to more than 300 mAh g −1 capacity from the Mn 2+ /Mn 4+ redox reservoir. The increased transition metal redox and decreased O oxidation are found to improve the capacity and voltage retention, indicating that oxygen vacancy creation to remove the most vulnerable oxygen ions and reduce transition metal valence provides a new opportunity for the design of high‐performance Li‐rich rocksalt cathodes.

25 ENERGY STORAGE↗
DOE OSTI2020

Investigation on capacity loss mechanisms of lithium-ion pouch cells under mechanical indentation conditions

Capacity loss was observed in Li-ion cells after mechanical deformation approaching the onset of internal short circuit (ISCr). In this paper, a series of indentation tests were carried out on commercial Li-ion cells of three capacities (500, 1500 and 2000 mAh). Both in-situ and ex-situ methods were used to investigate the mechanisms of indentation-induced capacity loss. We note after indentation test, the cell capacity reduced by 0.5%–6% of its original value. The incremental capacity (IC) analysis results showed that IC curves generally shifted to lower voltage region, indicating the increase in cell internal resistance. In addition, the fitting results of electrochemical impedance spectroscopy (EIS) indicated that mechanical indentation can result in a reduction in ohmic resistance and the increase in polarization resistance. Scanning electron microscopy (SEM) and X-ray computed tomography (XCT) results showed crushing of graphite, mud cracking of copper current collectors and enlarged pores in separator, which is proposed to be the main reasons for the increase in polarization resistance and permanent capacity loss. The rapid capacity loss due to mechanical abuse was compared with the long-term capacity fading.

25 ENERGY STORAGE↗
DOE OSTI2022

Epitaxial Sc x Al 1- x N on GaN exhibits attractive high-K dielectric properties

Epitaxial Sc x Al 1- x N thin films of ~100 nm thickness grown on metal polar GaN substrates are found to exhibit significantly enhanced relative dielectric permittivity (ε r ) values relative to AlN. ε r values of ~17–21 for Sc mole fractions of 17%–25% ( x = 0.17–0.25) measured electrically by capacitance–voltage measurements indicate that Sc x Al 1- x N has the largest relative dielectric permittivity of any existing nitride material. Since epitaxial Sc x Al 1- x N layers deposited on GaN also exhibit large polarization discontinuity, the heterojunction can exploit the in situ high-K dielectric property to extend transistor operation for power electronics and high-speed microwave applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Improving Distribution System Operations Using Fleet Control of Electrolyzers

The proliferation of electrolyzers presents an opportunity for grid operators. Fast response times and the use of hydrogen as storage can be leveraged in a symbiotic way to support increasing penetration levels of photovoltaics (PV) in the distribution grid. This work presents the grid integration of an electrolyzer fleet and its control applications to minimize the impact of increasing solar PV penetration in the distribution network. The study involves a feeder model of a real utility circuit from a utility partner with an operational model of a fleet of electrolyzers. The operational improvements are quantified with performance metrics. The metrics show that the fleet control application of the electrolyzers can aid in reducing overvoltages, voltage fluctuations, and control device operations induced by intermittent solar generation. The locational dependence of electrolyzers are also discussed in terms of performance metrics.

39 EE - Hydrogen and Fuel Cell Technologies (EE-3F↗
DOE OSTI2021

Two-dimensional superconductivity and anisotropic transport at KTaO 3 (111) interfaces

The distinctive electronic structure found at interfaces between materials can allow unconventional quantum states to emerge. Here we report on the discovery of superconductivity in electron gases formed at interfaces between (111)-oriented KTaO 3 and insulating overlayers of either EuO or LaAlO 3 . The superconducting transition temperature, as high as 2.2 kelvin, is about one order of magnitude higher than that of the LaAlO 3 /SrTiO 3 system. Notably, similar electron gases at KTaO 3 (001) interfaces remain normal down to 25 millikelvin. The critical field and current-voltage measurements indicate that the superconductivity is two-dimensional. In EuO/KTaO 3 (111) samples, a spontaneous in-plane transport anisotropy is observed before the onset of superconductivity, suggesting the emergence of a distinct “stripe”-like phase, which is also revealed near the critical field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1971

Study of second breakdown in power transistors using infrared techniques

Infrared thermal maps pinpoint exact location where second breakdown will occur before phenomenon happens and before physical damage develops at hot spot. Crystal structure analysis at that point determines cause of fault. Absolute power of radiation emitted from hot spot is direct indication of voltage level at which second breakdown occurs

Source record↗
NASA NTRS1978

Controlled freezing of biological samples

Apparatus consists of thermocouple connected to semiconductor reference junction. Junction is connected to amplifier that boosts signal by 1,000. High-level signal is displayed on recorder and fed into second amplifier where it is compared with signal from potentiometer of programmed dc reference in bag-temperature programer. Difference in signals indicates output voltage. Remaining circuitry provides zero-phase, time-proportion control of heaters such that heater power is directly proportional to error signal.

Cygnarowicz, T. A.↗