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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Ultrafast Modulation of Semiconductor Lasers Through a Terahertz Field

We demonstrate, by means of numerical simulation, a new mechanism to modulate and switch semiconductor lasers at THz and sub-THz frequency rates. A sinusoidal terahertz field applied to a semiconductor laser heats the electron-hole plasma and consequently modifies the optical susceptibility. This allows an almost linear modulation of the output power of tile semiconductor laser and leads to a faithful reproduction of the terahertz-field waveform in the emitted laser intensity.

Ning, Cun-Zheng↗
NASA NTRS2001

Self-Sustained Ultrafast Pulsation in Coupled VCSELs

High frequency, narrow-band self-pulsating operation is demonstrated in two coupled vertical-cavity surface-emitting lasers (VCSELs). The coupled VCSELs provide an ideal source for high-repetition rate (over 40 GHz), sinusoidal-like modulated laser source with Gaussian-like near- and far-field profiles. We also show that the frequency of the modulation can be tuned by the inter-VCSEL separation or by DC-bias level.

Ning, Cun-Zheng↗
NASA NTRS1996

Computational Modeling of Ultrafast Pulse Propagation in Nonlinear Optical Materials

There is an emerging technology of photonic (or optoelectronic) integrated circuits (PICs or OEICs). In PICs, optical and electronic components are grown together on the same chip. rib build such devices and subsystems, one needs to model the entire chip. Accurate computer modeling of electromagnetic wave propagation in semiconductors is necessary for the successful development of PICs. More specifically, these computer codes would enable the modeling of such devices, including their subsystems, such as semiconductor lasers and semiconductor amplifiers in which there is femtosecond pulse propagation. Here, the computer simulations are made by solving the full vector, nonlinear, Maxwell's equations, coupled with the semiconductor Bloch equations, without any approximations. The carrier is retained in the description of the optical pulse, (i.e. the envelope approximation is not made in the Maxwell's equations), and the rotating wave approximation is not made in the Bloch equations. These coupled equations are solved to simulate the propagation of femtosecond optical pulses in semiconductor materials. The simulations describe the dynamics of the optical pulses, as well as the interband and intraband.

Goorjian, Peter M.↗
NASA NTRS2002

Ultrafast Narrow Band Modulation of VCSELs

Multimode beating was greatly enhanced by taking output from part (e.g., half) of the output facet. Simpler sources of microwaves and millimeter waves of various frequencies were generated by varying the VCSEL diameter in a single multimode VCSEL our coupling of a few VCSELs. Breathing frequency in multi-mode operations affects modulation response and bandwidth. Optimizing RO frequency and mode beating frequency could potentially expand bandwidths suitable for wide band digital communications.

Ning, Cun-Zheng↗
NASA NTRS1998

Ultrafast Modulation and Switching of Quantum-Well Lasers using Terahertz Fields

Modulation and switching of semiconductor lasers are important for laser-based information technology. Typically the speed of modulation and switching is limited by interband processes such as stimulated and spontaneous recombinations which occur on a nanosecond time scale. This is why the diode laser modulation has been restricted to tens of GHz. Modulation at higher speed is highly desirable as the information technology enters into the so-called tera-era. In this paper, we study the possibility of utilizing THz-field-induced plasma heating to modulate quantum-well lasers. This is a timely study since, with the advancement of THz solid-state sources and free-electron lasers, THz physics and related technology is currently coming out of its infancy. The investigation of interplaying THz and optical fields is also of intruiging fundamental interest. First, we introduce theoretical plasma heating results for the quantum-well optical amplifier in the presense of an intense half-cycle THz pulse. The heated carrier distributions are then utilized to calculate the THz-pulse-induced change in refractive index and gain profile. Since the electron-hole-plasma is heated using intraband transitions, we circumvent the usual complications due to an overall change in density, and the nonlinear recovery is governed solely by the carrier-LO-phonon interactions, typically 5 ps for a complete recovery. This procedure implies THz and sub-THz switching and recovery rates, respectively; using either gain modulation or index modulation. Plasma heating via steady-state THz fields is also studied. Finally, numerical simulation of a coupled set of equations to investigate the THz modulation based on a simplified model for quantum-well lasers is presented. Our results show that a semiconductor laser can be modulated at up to 1 THz with little distortion with a THz field amplitude at the order of a few kV/cm. Laser responses to a change in THz frequency will be shown. Constraints, practicalities, and applications will be discussed.

Ning, Cun-Zheng↗
NASA NTRS2008

New Insights into the Composition and Texture of Lunar Regolith Using Ultrafast Automated Electron-Beam Analysis

Sieved grain mounts of Apollo 16 drive tube samples have been examined using QEMSCAN - an innovative electron beam technology. By combining multiple energy-dispersive X-ray detectors, fully automated control, and off-line image processing, to produce digital mineral maps of particles exposed on polished surfaces, the result is an unprecedented quantity of mineralogical and petrographic data, on a particle-by-particle basis. Experimental analysis of four size fractions (500-250 microns, 150-90 microns, 75-45 microns and < 20 microns), prepared from two samples (64002,374 and 64002,262), has produced a robust and uniform dataset which allows for the quantification of mineralogy; texture; particle shape, size and density; and the digital classification of distinct particle types in each measured sample. These preliminary data show that there is a decrease in plagioclase modal content and an opposing increase in glass modal content, with decreasing particle size. These findings, together with data on trace phases (metals, sulphides, phosphates, and oxides), provide not only new insights into the make-up of lunar regolith at the Apollo 16 landing site, but also key physical parameters which can be used to design lunar simulants, and compute Figures of Merit for each material produced.

Rickman, Doug↗
NASA NTRS2018

Rayleigh Scattering Density Measurements from Ultrafast Lasers in High-Pressure, Cryogenic Wind Tunnels

The Rayleigh scattering signal from femtosecond laser pulses is examined for its utility at making instantaneous density measurements in the NASA Langley 0.3-m Transonic Cryogenic Tunnel. An electron-multiplying CCD camera is used to visualize Rayleigh scattering signal taken concurrently with velocity measurements utilizing the femtosecond laser tagging velocimetry technique (FLEET). The results indicate a strong potential for making instantaneous measurements. Viable single-shot images are obtained over the full operational envelope of the facility, and shot-to-shot variations are found to be on average 6 percent (at 95 percent confidence level) and tend to decrease as the facility density is increased. The Rayleigh scattering signals observed before the optical focus exhibit a characteristically linear dependence on the mass-density of the gas, while signals after the focus exhibit a nonlinear (sublinear) density dependence, indicative of stronger absorption at higher densities. The measured Rayleigh scattering signals compare favorably to theoretical assessments made at the tunnel operating conditions.

Burns, Ross A.↗
NASA NTRS2020

Ultrafast Melting at Metal-Semiconductor Interfaces: A Molecular Dynamics Study

Quantifying the thermodynamics of interfacial melting is important for several applications such as laser machining and designing radiation hardened electronic devices. Due to the short time and length scales that are involved in the process, molecular simulations provide an ideal path for understating the interfacial melting phenomena. In this work we investigate tungsten (W) – silicon carbide (SiC) interfaces which are relevant in modern high-power electronic devices. Classical molecular dynamics simulations along with the two-temperature model (TTM) were used to study the radiation induced melting of the interface while a neural network-based machine learning framework was used to track the transient re-crystallization process. The damage endured by the semiconductor at the interface following the radiation event is discussed in detail while the re-crystallization of the metal is described in terms of the classical nucleation theory.

Ashwin Ravichandran↗
NASA NTRS2020

Resolving the Soft X-Ray Ultrafast Outflow in PDS 456

Past X-ray observations of the nearby luminous quasar PDS 456 (at z = 0.184) have revealed a wide-angle accretion disk wind with an outflow velocity of ∼−0.25c, as observed through observations of its blueshifted iron K-shell absorption line profile. Here we present three new XMM-Newton observations of PDS 456: one in 2018 September where the quasar was bright and featureless and two in 2019 September, 22 days apart, occurring when the quasar was five times fainter and where strong blueshifted lines from the wind were present. During the second 2019 September observation, three broad (σ = 3000 km s(exp -1)) absorption lines were resolved in the high-resolution Reflection Grating Spectrometer spectrum that are identified with blueshifted O VIII Lyα, Ne IX Heα, and Ne X Lyα. The outflow velocity of this soft X-ray absorber was found to be v/c = -0.258 ± 0.003, fully consistent with an iron K absorber with v/c = -0.261 ± 0.007. The ionization parameter and column density of the soft X-ray component (log ξ = 3.4, N(sub H) = 2 × 10(exp 21) cm(exp -2)) outflow was lower by about 2 orders of magnitude when compared to the high-ionization wind at iron K (log ξ = 5, N(sub H) = 7 × 10(exp 23) cm(exp -2). Substantial variability was seen in the soft X-ray absorber between the 2019 observations, declining from N(sub H) = 10(exp 23) to 10(exp 21) cm(exp -2) over 20 days, while the iron K component was remarkably stable. We conclude that the soft X-ray wind may originate from an inhomogeneous wind streamline passing across the line of sight that, due to its lower ionization, is located further from the black hole, on parsec scales, than the innermost disk wind

Active galactic nuclei↗
NASA NTRSDate not supplied

All-Climate and Ultrafast Rechargeable Aluminum Batteries Enabled By Ternary Eutectic Electrolytes

For Rechargeable Aluminum Batteries (RABs), electrolytes emerge as the most crucial and decisive component due to the following aspects: (i) Sluggish reaction kinetics due to high gravimetric density of Al (2.70 g/cm 3 vs. 0.53 g/cm 3 for Li) and high surface charge density, (ii) a limited safe potential window owing to moderate standard redox potential values. The state-of-the-art electrolytes in the field exhibits a limited stability window (<2.6V vs. Al/Al +3 ), leading to undesired side reactions, such as Cl 2 gas generation, and self-discharge in RABs. Exploration of RABs low-temperature performance is restricted by electrolyte limitations.

Raju Vadthya↗
NASA NTRS1987

Novel optoelectronic devices; Proceedings of the Meeting, The Hague, Netherlands, Mar. 31-Apr. 2, 1987

The present conference on novel optoelectronics discusses topics in the state-of-the-art in this field in the Netherlands, quantum wells, integrated optics, nonlinear optical devices and fiber-optic-based devices, ultrafast optics, and nonlinear optics and optical bistability. Attention is given to the production of fiber-optics for telecommunications by means of PCVD, lifetime broadening in quantum wells, nonlinear multiple quantum well waveguide devices, tunable single-wavelength lasers, an Si integrated waveguiding polarimeter, and an electrooptic light modulator using long-range surface plasmons. Also discussed are backward-wave couplers and reflectors, a wavelength-selective all-fiber switching matrix, the impact of ultrafast optics in high-speed electronics, the physics of low energy optical switching, and all-optical logical elements for optical processing.

Adams, Michael J.↗
NASA NTRS2000

Modeling of Optoelectronic Devices

Ultrafast modulation of semiconductor quantum well (QW) laser is of technological importance for information technology. Improvement by order(s) of magnitude in data transfer rate is possible as terahertz (THz) radiation is available for heating the laser at picosecond time scale. Optical gain modulation in the QW is achieved via temperature modulation of electron-hole plasma (EHP). Applications include free-space THz communication, optical switching, and pulse generation. The EHP in the semiconductor QW is described with a two-band model. Semiconductor Bloch equations with many-body effects are used to derive a hydrodynamical model for the active QW region. Because of ultrafast carrier-carrier scatterings in the order of 50 fs, EHP follows quasiequilibrium Fermi-Dirac distributions and THz field interacts incoherently with it. Carrier-longitudinal optical (LO) phonon scatterings and coherent laser-EHP interaction are treated microscopically in our physical model. A set of hydrodynamical equations for plasma density, temperature, and laser envelop amplitude are derived and Runge-Kutta method is adopted for numerical simulation. A typical 8 nm GaAs/Al(0.3)Ga(0.7) As single QW at 300 K is used. Additional information is contained in the original extended abstract.

Li, Jian-Zhong↗