Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “trench”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Performance Assessment Closure Plan for the Active Low-Level Burial Ground Trenches 31, 34, and 94 at the Hanford Site

This report documents the closure plan for the active trenches within the Low-Level Burial Grounds of the Hanford Site, namely Trenches 31 and 34 in the 200 West Area and Trench 94 in 200 East Area. This closure plan is developed to meet the requirements of DOE O 435.1, Radioactive Waste Management. It is one of the several technical basis documents, along with the performance assessment (DOE/RL-2021-26, Performance Assessment of Active Trenches in 200 East and West Low-Level Burial Grounds at the Hanford Site), which is required for maintaining the Operating Disposal Authorization Statement as described in DOE-STD-5002-2017, Disposal Authorization Statement and Tank Closure Documentation.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2026

Sapphire Substrate Trenching to Advance Superconducting High-Coherence Quantum Devices

Achieving longer coherence times in superconducting qubits is essential for advancing quantum information processing and enabling scalable quantum computing. This work presents an innovative fabrication strategy focused on sapphire trenching of the substrate of superconducting high-coherence quantum devices, developed by the SQMS Nanofabrication Taskforce in collaboration with the materials characterization team. In this talk, we present a method to efficiently and consistently trench into the sapphire substrate, without compromising the surface roughness or profile of the etched sapphire. In the literature, trenching in the substrate has been shown to decrease losses, unwanted coupling and thermal stress. Sapphire’s strong covalent bonds make it harder to etch compared to silicon, yet it is more favorable for high-coherence quantum devices due to its lower dielectric losses. This innovative technique opens new possibilities for superconducting qubit fabrication: we fabricated high coherence qubit chips on sapphire substrates with trenching, to demonstrate that it will help pushing towards higher coherence times. By integrating this work with ongoing junction process optimization, design innovation, materials characterization and exploration, we outline a clear pathway toward transmon coherence times reaching millisecond scales and beyond.

Garattoni, S. [Fermilab]↗
DOE OSTI2026

Sapphire Substrate Trenching to Advance Superconducting High-Coherence Quantum Devices

Achieving longer coherence times in superconducting qubits is essential for advancing quantum information processing and enabling scalable quantum computing. This work presents an innovative fabrication strategy focused on sapphire trenching of the substrate of superconducting high-coherence quantum devices, developed by the SQMS Nanofabrication Taskforce in collaboration with the materials characterization team. In this talk, we present a method to efficiently and consistently trench into the sapphire substrate, without compromising the surface roughness or profile of the etched sapphire. In the literature, trenching in the substrate has been shown to decrease losses, unwanted coupling and thermal stress. Sapphire’s strong covalent bonds make it harder to etch compared to silicon, yet it is more favorable for high-coherence quantum devices due to its lower dielectric losses. This innovative technique opens new possibilities for superconducting qubit fabrication: we fabricated high coherence qubit chips on sapphire substrates with trenching, to demonstrate that it will help pushing towards higher coherence times. By integrating this work with ongoing junction process optimization, design innovation, materials characterization and exploration, we outline a clear pathway toward transmon coherence times reaching millisecond scales and beyond.

Garattoni, S. [Fermilab]↗
NASA NTRS1992

Oblique convergence and deformation along the Kuril and Japan trenches

The hypothesis that present-day deformation within the southern Kuril forearc is driven by oblique subduction of the Pacific plate is tested using 397 horizontal slip directions derived from shallow-thrust earthquakes from the Kuril and Japan trenches for the period 1963-1991. A simple two-plate model fits the 397 slip vectors significantly worse than a model that permits strike-slip motion of the southern Kuril forearc relative to the overlying plate. Weighted, mean slip directions along the southern Kuril trench are systematically rotated toward the direction orthogonal to the trench, which implies that the net convergence is partitioned into less oblique subduction and trench-parallel displacement of the southern Kuril forearc. The angular discrepancy between the observed slip direction and the direction predicted by the NUVEL-1 Pacific-North America Euler vector implies that the southern Kuril forearc translates 6-11 mm/yr to the southwest relative to the overlying North American plate. These results are consistent with geologically, geodetically, and seismologically observed convergence at the leading edge of the forearc sliver in southern Kokkaido and with previously inferred extension at the trailing edge of the sliver, which is located at the Bussol Strait at 46 deg N.

Demets, Charles↗
NASA NTRS2017

Recent Radiation Test Results for Trench Power MOSFETs

Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs. The heavy-ion response of the first (and only) radiation-hardened trench-gate power MOSFET is evaluated: the manufacturer SEE response curve is verified and importantly, no localized dosing effects are measured, distinguishing it from other, non-hardened trench-gate power MOSFETs. Evaluations are made of n-type commercial and both n- and p-type automotive grade trench-gate device using ions comparable to of those on the low linear energy transfer (LET) side of the iron knee of the galactic cosmic ray spectrum, to explore suitability of these parts for missions with higher risk tolerance and shorter duration, such as CubeSats. Part-to-part variability of SEE threshold suggests testing with larger sample sizes and applying more aggressive derating to avoid on-orbit failures. The n-type devices yielded expected localized dosing effects including when irradiated in an unbiased (0-V) configuration, adding to the challenge of inserting these parts into space flight missions.

Schottky Diodes↗
DOE OSTI2024

Investigation on gate oxide reliability under gate bias screening for commercial SiC planar and trench MOSFETs

This paper evaluates the impact of the fast high gate-voltage screening technique on gate oxide reliability of commercial 1.2 kV 4H-SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) with planar and trench gate structures. The measurements are conducted on packaged devices with the intent that the results will be applicable to wafer-level screening. The threshold voltage (V th ) of SiC MOSFETs is measured before and after various screening treatments and recovery process. In addition, constant-voltage time-dependent dielectric breakdown (TDDB) measurements are performed on SiC MOSFETs to obtain the intrinsic lifetime of gate oxide. The objective of this study is to determine the optimal screening conditions and improve screening efficiency without degradation of gate oxide reliability, such as V th shift and reduced oxide intrinsic lifetime. Due to the differences in the gate oxidation process and structural design of SiC planar and trench MOSFETs, the two types of devices exhibit different oxide reliability in the screening process. The recommended screening conditions obtained in this paper reveal that SiC trench MOSFETs can accept higher screening voltages compared to SiC planar MOSFETs. Hence, it can be concluded that more efficient screening techniques can be adopted for SiC MOSFETs with thicker gate oxide to meet the requirements of industrial applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Micro-trench measurements of the net deposition of carbon impurity ions in the DIII-D divertor and the resulting suppression of surface erosion

In this work, we report carbon impurity ion incident angles and deposition rates, along with silicon erosion rates, from measurements of micro-engineered trenches on a silicon surface exposed to L-mode deuterium plasmas at the DIII-D divertor. Post exposure ex-situ analysis determined elemental maps and concentrations, carbon deposition thicknesses, and erosion of silicon surfaces. Carbon deposition profiles on the trench floor showed carbon ion shadowing that was consistent with ERO calculations of average carbon ion angle distributions (IADs) for both polar and azimuthal angles. Measured silicon net erosion rates negatively correlated with the deposited carbon concentration at different locations. Differential erosion of surfaces on two different ion-downstream trench slope structures suggested that carbon deposition rate is affected by the carbon ion incident angle and significantly suppressed the surface erosion. The results suggest the C impurity ion incident angles, determined by the IADs and surface morphology, strongly affect erosion rates as well as the main ion (D, T, He) incident angles.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1988

Ridge-trench collision in Archean and Post-Archean crustal growth: Evidence from southern Chile

The growth of continental crust at convergent plate margins involves both continuous and episodic processes. Ridge-trench collision is one episodic process that can cause significant magmatic and tectonic effects on convergent plate margins. Because the sites of ridge collision (ridge-trench triple junctions) generally migrate along convergent plate boundaries, the effects of ridge collision will be highly diachronous in Andean-type orogenic belts and may not be adequately recognized in the geologic record. The Chile margin triple junction (CMTJ, 46 deg S), where the actively spreading Chile rise is colliding with the sediment-filled Peru-Chile trench, is geometrically and kinematically the simplest modern example of ridge collision. The south Chile margin illustrates the importance of the ridge-collision tectonic setting in crustal evolution at convergent margins. Similarities between ridge-collision features in southern Chile and features of Archean greenstone belts raise the question of the importance of ridge collision in Archean crustal growth. Archean plate tectonic processes were probably different than today; these differences may have affected the nature and importance of ridge collision during Archean crustal growth. In conclusion, it is suggested that smaller plates, greater ridge length, and/or faster spreading all point to the likelihood that ridge collision played a greater role in crustal growth and development of the greenstone-granite terranes during the Archean. However, the effects of modern ridge collision, and the processes involved, are not well enough known to develop specific models for the Archean ridge collison.

Nelson, E. P.↗
NASA NTRS1990

The relationship between plate velocity and trench viscosity in Newtonian and power-law subduction calculations

The relationship between oceanic trench viscosity and oceanic plate velocity is studied using a Newtonian rheology by varying the viscosity at the trench. The plate velocity is a function of the trench viscosity for fixed Rayleigh number and plate/slab viscosity. Slab velocities for non-Newtonian rheology calculations are significantly different from slab velocities from Newtonian rheology calculations at the same effective Rayleigh number. Both models give reasonable strain rates for the slab when compared with estimates of seismic strain rate. Non-Newtonian rheology eliminates the need for imposed weak zones and provides a self-consistent fluid dynamical mechanism for subduction in numerical convection models.

King, Scott D.↗
NASA NTRS1992

Flexural ridges, trenches, and outer rises around coronae on Venus

Flexural signatures outboard of Venusian coronal rims are examined with the purpose of inferring the thickness of the planet's elastic lithosphere. Topographic profiles of several prominent coronae which display clear trench and outer rise signatures are presented. Via a thin elastic plate flexure model to characterize the shape of the trench and outer rise, Venusian flexures are found to be similar in both amplitude and wavelength to lithospheric flexures seaward of subduction zones on earth. It is shown that circumferential fractures are concentrated in areas where the topography is curved downward, in good agreement with the high tensile stress predicted by the flexure models. Two scenarios for the development of the ridge-trench-outer rise flexural topography and circumferential fractures of coronae are presented. The first scenario involves reheating and thermal subsidence of the lithosphere interior to the corona, while the second involves expansion of the corona interior and roll back of the subducting lithosphere exterior to the corona.

Sandwell, David T.↗
NASA NTRS1993

Constraints on interseismic deformation at Japan trench from VLBI data

Space geodetic data from very long baseline interferometry (VLBI) was used to estimate velocity relative to the plate interiors of two sites on the deforming leading edge at the Japan trench. Elastic models of interseismic deformation and results obtained were used to put constraints on the slip rate along the main thrust of the Japan subduction zone. Observed velocities reflect the sum of permanent west-northwest shortening in Honshu, elastic deformation due to locking of the main thrust fault at the Japan trench, and deformation associated with the subducting Phillipine plate. These velocities limit the locked segment of the main thrust at the Japan trench to 27 km vertically and 100 km along the dip. This indicates that the main Pacific plate thrust fault is not strongly coupled and probably does not generate strong earthquakes.

Argus, Donald F.↗
NASA NTRS1993

Flame trench analysis of NLS vehicles

The present study takes the initial steps of establishing a better flame trench design criteria for future National Launch System vehicles. A three-dimensional finite element computer model for predicting the transient thermal and structural behavior of the flame trench walls was developed using both I-DEAS and MSC/NASTRAN software packages. The results of JANNAF Standardized Plume flowfield calculations of sea-level exhaust plume of the Space Shuttle Main Engine (SSME), Space Transportation Main Engine (STME), and Advanced Solid Rocket Motors (ASRM) were analyzed for different axial distances. The results of sample calculations, using the developed finite element model, are included. The further suggestions are also reported for enhancing the overall analysis of the flame trench model.

Zeytinoglu, Nuri↗
NASA NTRS1994

First geodetic measurement of convergence across the Java Trench

Convergence across the Java Trench has been estimated for the first time, from annual Global Positioning System (GPS) measurements commencing in 1989. The directions of motion of Christmas and Cocos Island are within 1 deg of that predicted by the No-Net Rotation (NNR) NUVEL-1 plate motion model for the Australian plate although their rates are 25% and 37% less than predcited, respectively. The motion of West Java differs significantly from the NNR NUVEL-1 prediction for the Eurasian plate with a 1 deg difference in direction and a 40% increase in rate. We infer that either West Java moves with a distinct Southeast Asian plate or this region experiences plate margin deformation. The convergence of Christmas Island with respect to West Java is 67 +/- mm/yr in a direction N11 deg E +/- 4 deg which is orthogonal to the trench. The magnitude of convergence agrees well with rescaled NUVEL-1 relative plate model which predicts a value of 71 mm/yr between Australia and Eurasia. The direction of motion matches the direction inferred from earthquake slip vectors at the trench but may be more northerly than the N20 deg E +/- 3 deg predicted by NUVEL-1. On June 2, 1994, almost a year after the last GPS survey, an M(sub W) = 7.5 earthquake with slip vector direction N5 deg occurred south of central Java.

Tregoning, P.↗
NASA NTRS2009

Vibro-Acoustic Analysis of NASA's Space Shuttle Launch Pad 39A Flame Trench Wall

A vital element to NASA's manned space flight launch operations is the Kennedy Space Center Launch Complex 39's launch pads A and B. Originally designed and constructed In the 1960s for the Saturn V rockets used for the Apollo missions, these pads were modified above grade to support Space Shuttle missions. But below grade, each of the pad's original walls (including a 42 feet deep, 58 feet wide, and 450 feet long tunnel designed to deflect flames and exhaust gases, the flame trench) remained unchanged. On May 31, 2008 during the launch of STS-124, over 3500 of the. 22000 interlocking refractory bricks that lined east wall of the flame trench, protecting the pad structure were liberated from pad 39A. The STS-124 launch anomaly spawned an agency-wide initiative to determine the failure root cause, to assess the impact of debris on vehicle and ground support equipment safety, and to prescribe corrective action. The investigation encompassed radar imaging, infrared video review, debris transport mechanism analysis using computational fluid dynamics, destructive testing, and non-destructive evaluation, including vibroacoustic analysis, in order to validate the corrective action. The primary focus of this paper is on the analytic approach, including static, modal, and vibro-acoustic analysis, required to certify the corrective action, and ensure Integrity and operational reliability for future launches. Due to the absence of instrumentation (including pressure transducers, acoustic pressure sensors, and accelerometers) in the flame trench, defining an accurate acoustic signature of the launch environment during shuttle main engine/solid rocket booster Ignition and vehicle ascent posed a significant challenge. Details of the analysis, including the derivation of launch environments, the finite element approach taken, and analysistest/ launch data correlation are discussed. Data obtained from the recent launch of STS-126 from Pad 39A was instrumental in validating the design analysis philosophies outlined in this paper.

Margasahayam, Ravi N.↗
DOE OSTI2023

Diffused trenches for high fill-factor Low-Gain Avalanche Diodes

Low-Gain Avalanche Diodes (LGADs) are a class of silicon detectors that have been specifically designed for the fast detection of minimum ionizing particles (mips) in High-Energy Physics experiments. While they provide timing resolution on the order of a few tens of picoseconds, they cannot achieve high spatial resolution due to the intrinsic characteristics of their structures. Thus, active R&D is on-going to develop detectors based on LGADs to improve their spatial resolution while maintaining the timing performance of the LGADs. Such devices are, for example, AC-coupled LGADs and Deep-Junction LGADs. Another device option is the Trench-Isolated LGAD (TI LGAD), where trenches etched at the periphery of the pixels isolate them while providing a high fill-factor. Here, in this paper, we present a variation of this latter approach, demonstrating its feasibility by means of 2-dimensional TCAD simulations.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

β -Ga 2 O 3 trench Schottky diodes by low-damage Ga-atomic beam etching

β-Ga 2 O 3 trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique with excellent field strength and power device figure of merit are demonstrated. Trench formation was accomplished by a low-damage Ga flux etch that enables near-ideal forward operating characteristics that are independent of fin orientation. The reverse breakdown field strength of greater than 5.10 MV/cm is demonstrated at a breakdown voltage of 1.45 kV. This result demonstrates the potential for Ga atomic beam etching and high-quality dielectric layers for improved performance in β-Ga 2 O 3 vertical power devices.

42 ENGINEERING↗
DOE OSTI2020

PORFLOW Implementation of Special Waste from Models for Slit and Engineered Trenches in the E-Area Low Level Waste Facility Performance Assessment

The implementation of special waste forms (SWFs) in the deterministic PORFLOW Slit Trench (ST) and Engineered Trench (ET) models to be used in the next revision of the E-Area Low Level Waste Facility’s (ELLWFs) Performance Assessment (PA) is outlined in this report. Four SWF implementation methods will be used: effective K d , delayed release, solubility-controlled/diffusion-controlled release, and complex SWF model updates. In addition, the implementation of models that address the presence of tall used equipment storage boxes in ST08-10 is considered a special waste form and will be described.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2020

Vadose Zone Model for A Trenches Area for Composite Analysis

The objectives of the vadose modeling for the updated Hanford Site composite analysis (CA) are to simulate the flow and transport of water and radionuclide releases from the surface to the water table and to provide radionuclide transfer rates for the plateau to river (P2R) model, version 8.3. Water additions include natural recharge and water discharged to the ground as a result of industrial processes associated with Hanford Site operations. Contaminant sources include radionuclides in water discharged to the ground during operations and radionuclides disposed “dry” in solid waste burial grounds or other means. The parallel version of the Subsurface Transport Over Multiple Phases (STOMP) simulator, officially named the exascale Subsurface Transport Over Multiple Phases (eSTOMP), is used to simulate flow and transport for the vadose models. The scope of this ECF is to document the development and results of the A Trenches Area vadose zone model. The A Trenches Area model covers the region between the 200 East Area and southwest of the 216-B-3 Pond. The primary waste sites in this area are cribs associated with PUREX Plant (202-A).

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗