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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Exciton photoluminescence and benign defect complex formation in zinc tin nitride

Emerging photovoltaic materials need to prove their viability by demonstrating excellent electronic properties. In ternary and multinary semiconductors, disorder and off-stoichiometry often cause defects that limit the potential for high-efficiency solar cells. We report on Zn-rich ZnSnN 2 (Zn/(Zn + Sn) = 0.67) photoluminescence, high-resolution X-ray diffraction, and electronic structure calculations based on Monte-Carlo structural models. The mutual compensation of Zn excess and O incorporation affords a desirable reduction of the otherwise degenerate n-type doping, but also leads to a strongly off-stoichiometric and disordered atomic structure. It is therefore remarkable that we observe only near-edge photoluminescence from well-resolved excitons and shallow donors and acceptors. Based on first principles calculations, this result is explained by the mutual passivation of Zn Sn and O N defects that renders both electronically benign. The calculated bandgaps range between 1.4 and 1.8 eV, depending on the degree of non-equilibrium disorder. The experimentally determined value of 1.5 eV in post-deposition annealed samples falls within this interval, indicating that further bandgap engineering by disorder control should be feasible via appropriate annealing protocols.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Thermally Stable and Regenerable Platinum–Tin Clusters for Propane Dehydrogenation Prepared by Atom Trapping on Ceria

Abstract Ceria (CeO 2 ) supports are unique in their ability to trap ionic platinum (Pt), providing exceptional stability for isolated single atoms of Pt. The reactivity and stability of single‐atom Pt species was explored for the industrially important light alkane dehydrogenation reaction. The single‐atom Pt/CeO 2 catalysts are stable during propane dehydrogenation, but are not selective for propylene. DFT calculations show strong adsorption of the olefin produced, leading to further unwanted reactions. In contrast, when tin (Sn) is added to CeO 2 , the single‐atom Pt catalyst undergoes an activation phase where it transforms into Pt–Sn clusters under reaction conditions. Formation of small Pt–Sn clusters allows the catalyst to achieve high selectivity towards propylene because of facile desorption of the product. The CeO 2 ‐supported Pt–Sn clusters are very stable, even during extended reaction at 680 °C. Coke formation is almost completely suppressed by adding water vapor to the feed. Furthermore, upon oxidation the Pt–Sn clusters readily revert to the atomically dispersed species on CeO 2 , making Pt–Sn/CeO 2 a fully regenerable catalyst.

Xiong, Haifeng↗
DOE OSTI2018

Pressure‐Tuneable Visible‐Range Band Gap in the Ionic Spinel Tin Nitride

Abstract The application of pressure allows systematic tuning of the charge density of a material cleanly, that is, without changes to the chemical composition via dopants, and exploratory high‐pressure experiments can inform the design of bulk syntheses of materials that benefit from their properties under compression. The electronic and structural response of semiconducting tin nitride Sn 3 N 4 under compression is now reported. A continuous opening of the optical band gap was observed from 1.3 eV to 3.0 eV over a range of 100 GPa, a 540 nm blue‐shift spanning the entire visible spectrum. The pressure‐mediated band gap opening is general to this material across numerous high‐density polymorphs, implicating the predominant ionic bonding in the material as the cause. The rate of decompression to ambient conditions permits access to recoverable metastable states with varying band gaps energies, opening the possibility of pressure‐tuneable electronic properties for future applications.

Kearney, John S. C.↗
DOE OSTI2018

Air-Stable Direct Bandgap Perovskite Semiconductors: All-Inorganic Tin-Based Heteroleptic Halides A x SnCl y I z (A = Cs, Rb)

Semiconducting halide perovskites are a group of materials with exciting photoelectronic properties. Compared to the widely studied hybrid organic–inorganic perovskites, the all-inorganic derivatives are less well understood even as they promise high inherent stability. At the moment, such materials are limited due to the fact that there is a very narrow choice of inorganic cations that can stabilize the desirable perovskite structure. Herein we report on the synthesis and characterization of novel all-inorganic tin-based perovskites and perovskitoids that can be stabilized by the heteroleptic coordination of chloride and iodide anions, Cs 2 SnCl 2 I 2 ( 1 ) and Cs 2.38 Rb 1.62 Sn 3 Cl 8 I 2 ( 2 ), consist of two-dimensional (2D) layers of [SnCl 4 I 2 ] 4– octahedra with different connectivity modes. Compound 1 is an n = 1 Ruddlesden–Popper type perovskite adopting the tetragonal archetype structure ( I 4/ mmm space group; a = 5.5905(3) Å, c = 18.8982(13) Å), while compound 2 crystallizes as an orthorhombic modification ( Cmcm space group; a = 5.6730(11) Å, b = 25.973(5) Å, c = 16.587(3) Å) with corrugated layers. The crystal chemistry changes drastically when Cs + is replaced by the smaller Rb + cation which leads to the isolation of the low dimensional compounds Rb 3 SnCl 3 I 2 ( 3a ), Rb 3 SnCl 2.33 I 2.67 ( 3b ) and Rb 7 Sn 4.25 Cl 12 I 3.5 ( 4 ), thus illustrating the importance of the A-cation size in the formation of perovskites. The 2D perovskites show wide band gaps and relatively large resistivities, associated with their chemical stability against the oxidation of Sn 2+ . The chemical stability is coupled with remarkable electronic properties that derive from the perovskite structure. DFT calculations suggest that both compounds are direct band gap semiconductors with large bandwidths, consistently with the experimentally determined band gaps of E g = 2.62 and 2.81 eV for 1 and 2 , respectively. The combination of stability and favorable electronic structure in heteroleptic-halide perovskites presents a new direction toward the realization of functional devices made exclusively from inorganic perovskites.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Crystal Structure Evolution and Notable Thermal Expansion in Hybrid Perovskites Formamidinium Tin Iodide and Formamidinium Lead Bromide

The temperature-dependent structure evolution of the hybrid halide perovskite compounds, formamidinium tin iodide (FASnI 3 , FA + = CH[NH 2 ] 2 + ) and formamidinium lead bromide (FAPbBr 3 ), has been monitored using high-resolution synchrotron X-ray powder diffraction between 300 and 100 K. The data are consistent with a transition from cubic Pm$\bar{3}$m (No. 221) to tetragonal P 4 /mbm (No. 127) for both materials upon cooling; this occurs for FAPbBr 3 between 275 and 250 K, and for FASnI 3 between 250 and 225 K. Upon further cooling, between 150 and 125 K, both materials undergo a transition to an orthorhombic Pnma (No. 62) structure. The transitions are confirmed by calorimetry and dielectric measurements. In the tetragonal regime, the coefficients of volumetric thermal expansion of FASnI 3 and FAPbBr 3 are among the highest recorded for any extended inorganic crystalline solid, reaching 219 ppm K –1 for FASnI 3 at 225 K. Atomic displacement parameters of all atoms for both materials suggest dynamic motion is occurring in the inorganic sublattice due to the flexibility of the inorganic network and dynamic lone pair stereochemical activity on the B-site. Unusual pseudocubic behavior is displayed in the tetragonal phase of the FAPbBr 3 , similar to that previously observed in FAPbI 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2018

Wide Band Gap CuGa(S,Se) 2 Thin Films on Transparent Conductive Fluorinated Tin Oxide Substrates as Photocathode Candidates for Tandem Water Splitting Devices

Theaim of this report was to explore the potential of CuGa(S,Se)2 thin films as wide-E G top cell absorbers for photoelectrochemical (PEC) water splitting. A synthesis was developed on fluorinated tin oxide (FTO) photocathodes by converting copper-rich co-evaporated CuGaSe2 into CuGa(S,Se)2 via a post-deposition annealing. We found it necessary to first anneal CuGaSe2 at low-temperature in sulfur then at high-temperature in nitrogen to preserve the transparency and conductivity of the FTO. Using this two-step synthesis, we fabricated a 1.72eV CuGa(S,Se) 2 photocathode with a saturation current density and photocurrent onset potential of 10mA/cm 2 and -0.20V vs. RHE, respectively. Yet we found that the PEC performance and sub-E G transmittance, worsened with increasing copper content. Using flatband potential measurements and the Gerischer model, we show that divergences in PEC performance of CuGa(S,Se) 2 photocathodes can be explained by differences in conduction band minimums and Fermi levels. We also explain that sub-E G transmittance is likely hampered by a defect band 100-400 meV below E C . Additional external quantum efficiency measurements of a high-efficiency 1.1 eV Cu(In,Ga)Se 2 photovoltaic driver, while shaded by the CuGa(S,Se) 2 photocathode, yielded a short-circuit current density of 4.14 mA/cm 2 revealing that CuGa(S,Se) 2 reflects promise as a top cell for PEC water splitting.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Optical and electrical properties of indium tin oxide films near their laser damage threshold [Electrical and optical properties of indium tin oxide films under multi-pulse laser irradiation at 1064 nm]

In this paper, we investigated whether the optical and electrical properties of indium tin oxide (ITO) films are degraded under laser irradiation below their laser ablation threshold. While performing multi-pulse laser damage experiments on a single ITO film (4.7 ns, 1064 nm, 10 Hz), we examined the optical and electrical properties in situ . A decrease in reflectance was observed prior to laser damage initiation. However, under sub-damage threshold irradiation, conductivity and reflectance of the film were maintained without measurable degradation. This indicates that ITO films in optoelectronic devices may be operated below their lifetime laser damage threshold without noticeable performance degradation.

36 MATERIALS SCIENCE↗
NASA NTRS2016

Design, Fabrication, and Testing of a TiN Ti TiN Trilayer KID Array for 3mm CMB Observations

Kinetic inductance detectors (KIDs) are a promising technology for astronomical observations over a wide range of wavelengths in the mm and sub-mm regime. Simple fabrication, in as little as one lithographic layer, and passive frequency-domain multiplexing, with readout of up to 1000 pixels on a single line with a single cold amplifier, make KIDs an attractive solution for high-pixel-count detector arrays. We are developing an array that optimizes KIDs for optical frequencies near 100GHz to expand their usefulness in mm-wave applications, with a particular focus on CMBB-mode measurement efforts in association with the QUBIC telescope. We have designed, fabricated, and tested a 20-pixel prototype array using a simple quasi lumped microstrip design and pulsed DC reactive magnetron-sputtered TiNTiTiN trilayer resonators, optimized for detecting 100GHz (3mm) signals. Here we present a discussion of design considerations for the array, as well as preliminary detector characterization measurements and results from a study of TiN trilayer properties.

passive frequency-domain multiplexing↗