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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Doping as a tuning mechanism for magnetothermoelectric effects to improve z T in polycrystalline NbP

Weyl semimetals combine topological and semimetallic effects, making them candidates for interesting and effective thermoelectric transport properties. Here, we present experimental results on polycrystalline NbP, demonstrating the simultaneous existence of a large Nernst effect and a large magneto-Seebeck effect, which is typically not observed in a single material at the same temperature. We compare transport results from two polycrystalline samples of NbP with previously published work, observing a shift in the temperature at which the maximum Nernst and magneto-Seebeck thermopowers occur, while still maintaining thermopowers of similar magnitude. Theoretical modeling shows how doping strongly alters both the Seebeck and Nernst magneto-thermopowers by shifting the temperature-dependent chemical potential, and the corresponding calculations provide a consistent interpretation of our results. Thus, we offer doping as a tuning mechanism for shifting magneto-thermoelectric effects to temperatures appropriate for device applications, improving zT at desirable operating temperatures. Furthermore, the simultaneous presence of both a large Nernst and magneto-Seebeck thermopower is uncommon and offers unique device advantages if the thermopowers are used additively. Finally, we also propose a unique thermoelectric device which would collectively harness the large Nernst and magneto-Seebeck thermopowers to greatly enhance the output and zT of conventional thermoelectric devices.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2025

Large electron-phonon drag asymmetry and reverse heat flow in the topological semimetal θ-TaN

A broad range of unusual transport behaviors have been discovered in topological semimetals. However, to date, the effect on the thermopower from intrinsic momentum exchange between electrons and phonons has received little attention. Here we report that huge electron-phonon drag enhancements of the thermopower of the to- pological semimetal, θ-phase tantalum nitride (θ-TaN), can occur that persist even up to room temperature. Our first principles calculations also identify a surprising asymmetry in which the large drag-enhanced thermopowers found slightly above the material’s chemical potential disappear just below it. The large thermopower en- hancements result from anomalous drag contributions from high frequency acoustic phonons with unusually small decay rates. The apparent vanishing drag results from (i) the emergence of an exceptionally high electrical conductivity promoted by the steep linear electronic dispersions extending below one of the topological nodal points; (ii) a remarkable cancellation in which momentum transferred from a charge current creates oppositely directed phonon heat currents of nearly equal magnitude, thereby masking the drag contributions. This extraordinary transport behavior is a consequence of an unusual interplay between intrinsic electron and phonon material properties in θ-TaN. Overall, our work gives new insights into the fundamental physical properties of coupled electron-phonon systems and motivates further exploration of drag effects in semimetals.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Structural and Thermoelectric Properties of Black Arsenic–Phosphorus

Here, we report the structural and temperature dependent transport properties of As x P 1-x (x = 0, 0.2, 0.5, 0.83, 1) alloys. It is observed that black phosphorous (BP)-related phonon modes in the alloy samples are red-shifted with increasing arsenic concentration, while black arsenic-related modes in these samples are blue-shifted with increasing phosphorus concertation. As the arsenic concentration, x increases from 0 to 1, the 4-probe resistance of the As x P 1-x alloys is found to decrease by more than 3 orders of magnitude. The transport studies reveal that samples with the highest arsenic concentration (x = 1 and 0.83) show metallic behavior in the temperature dependence of resistance with a small thermopower at room temperature with an anomalous temperature dependence. In contrast, the samples with high phosphorus concentration (x = 0, 0.2, and 0.5) show very large thermopower values at room temperature reaching a value as high as 803 μV/k for x = 0.2. The temperature dependence of the thermopower of these samples can be well described by the variable range hopping (VRH) mechanism in two-dimensions (2-d), S ~ T 1/3 . Similarly, their 4-probe resistance (R) values can be fitted with 2-d VRH mechanism, R ~ exp(T -1/3 ).

36 MATERIALS SCIENCE↗
DOE OSTI2020

Quantized thermoelectric Hall effect induces giant power factor in a topological semimetal

Abstract Thermoelectrics are promising by directly generating electricity from waste heat. However, (sub-)room-temperature thermoelectrics have been a long-standing challenge due to vanishing electronic entropy at low temperatures. Topological materials offer a new avenue for energy harvesting applications. Recent theories predicted that topological semimetals at the quantum limit can lead to a large, non-saturating thermopower and a quantized thermoelectric Hall conductivity approaching a universal value. Here, we experimentally demonstrate the non-saturating thermopower and quantized thermoelectric Hall effect in the topological Weyl semimetal (WSM) tantalum phosphide (TaP). An ultrahigh longitudinal thermopower $$S_{xx} \sim 1.1 \times 10^3 \, \mu \, {\mathrm{V}} \, {\mathrm{K}}^{ - 1}$$ S x x ~ 1.1 × 1 0 3 μ V K − 1 and giant power factor $$\sim 525 \, \mu \, {\mathrm{W}} \, {\mathrm{cm}}^{ - 1} \, {\mathrm{K}}^{ - 2}$$ ~ 525 μ W cm − 1 K − 2 are observed at ~40 K, which is largely attributed to the quantized thermoelectric Hall effect. Our work highlights the unique quantized thermoelectric Hall effect realized in a WSM toward low-temperature energy harvesting applications.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Polaronic transport and thermoelectricity in Mn 3 Si 2 Te 6 single crystals

Here, we carried out a comprehensive study of the structural, electrical transport, thermal, and thermodynamic properties in ferrimagnetic Mn 3 Si 2 Te 6 single crystals. Mn and Te K -edge x-ray absorption spectroscopy and synchrotron powder x-ray diffraction were measured to provide information on the local atomic environment and the average crystal structure. The dc and ac magnetic susceptibility measurements indicate a second-order paramagnetic to ferrimagnetic transition at T c ~ 74 K, which is further confirmed by the specific heat measurement. Mn 3 Si 2 Te 6 exhibits semiconducting behavior along with a large negative magnetoresistance of -87% at T c and a relatively high value of thermopower up to ~10 mV/K at 5 K. Besides the rapidly increasing resistivity ρ(T) and thermopower S(T) below 20 K, the large discrepancy between the activation energy for resistivity E ρ and thermopower E S above 20 K indicates the polaronic transport mechanism. Furthermore, the thermal conductivity κ(T) of Mn 3 Si 2 Te 6 is notably rather low, comparable to Cr 2 Si 2 Te 6 , and is strongly suppressed in the magnetic field across T c , indicating the presence of strong spin-lattice coupling, also similar with Cr 2 Si 2 Te 6 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Thermal transport properties of IrSbSe

Here we report a thermal transport study of IrSbSe, which crystallizes in a noncentrosymmetric cubic structure with the P2 1 3 space group and shows a narrow-gap semiconducting behavior. The large discrepancy between the activation energy for conductivity [E ρ = 128(2) meV] and for thermopower [E S = 17.7 (9) meV] from 200 to 300 K indicates a polaronic transport mechanism. The electrical resistivity varies as exp (T 0 /T) 1/4 and thermopower varies as T 1/2 at low temperatures, indicating that it evolves into Mott variable-range hopping dominant conduction with decreasing temperature. IrSbSe shows a relatively low value of thermal conductivity (~1.65 W/Km) and thermopower of about 0.24 mV/K around 100 K, yet poor electrical conductivity. On the other hand, a high vacancy defect concentration on both Ir and Sb atomic sites of up to 15% suggests a high defect tolerance and points to the possibility of a future improvement of carrier density by chemical substitution or defect optimization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Thermoelectric properties of SnSe and SnSe 2 single crystals

Thermoelectric materials can serve for conversion between thermal and electrical energy. In the search for new thermoelectric materials, layered SnSe and SnSe 2 are promising candidates. Here we have successfully synthesized SnSe and SnSe 2 single crystals by the modified Bridgman method and studied their thermoelectric properties: thermopower (S), thermal conductivity (κ), and electrical conductivity (σ) in the temperature range between 2 K and 400 K, which are absent in the literature. In particular, the kink observed in the thermopower corresponds to the metallic-nonmetallic crossover temperature for both SnSe and SnSe 2 , reflecting their inherent electronic nature. Compared to SnSe 2 above 100 K, we find that SnSe exhibits higher electrical conductivity, higher thermopower, and lower thermal conductivity, thus resulting in the higher figure of merit. Hall effect measurements reveal that the Hall mobility in SnSe is an order higher than that in SnSe 2 , advancing its thermoelectric performance. These experimental results are supported by first principles calculations, which indicate that the inequivalent Sn-Se bonding lengths help improve the figure of merit of SnSe.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Electron-phonon drag enhancement of transport properties from a fully coupled ab initio Boltzmann formalism

We present a combined treatment of the nonequilibrium dynamics and transport of electrons and phonons by carrying out ab initio calculations of the fully coupled electron and phonon Boltzmann transport equations. We find that the presence of mutual drag between the two carriers causes the thermopower to be enhanced and dominated by the transport of phonons, rather than electrons as in the traditional semiconductor picture. Drag also strongly boosts the intrinsic electron mobility, thermal conductivity and the Lorenz number. Impurity scattering is seen to suppress the drag enhancement of the thermal and electrical conductivities, while having weak effects on the enhancement of the Lorenz number and thermopower. We demonstrate these effects in n-doped 3C-SiC at room temperature, and explain their origins. This work establishes the roles of microscopic scattering mechanisms in the emergence of strong drag effects in the transport of the interacting electron-phonon gas.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Synergizing a Large Ordinary Nernst Effect and Axis‐Dependent Conduction Polarity in Flat Band KMgBi Crystals

The exploration of quantum materials in which an applied thermo/electrical/magnetic field along one crystallographic direction produces an anisotropic response has led to unique functionalities. Along these lines, KMgBi is a layered, narrow gap semiconductor near a critical state between multiple Dirac phases due to the presence of a flat band near the Fermi level. The valence band is highly anisotropic with minimal cross-plane dispersion, which, in combination with an isotropic conduction band, enables axis-dependent conduction polarity. Thermopower and Hall measurements indicate dominant p-type conduction along the cross-plane direction, and n-type conduction along the in-plane direction, leading to a significant zero-field transverse thermoelectric response when the heat flux is at an angle to the principal crystallographic directions. Additionally, a large Ordinary Nernst effect (ONE) is observed with an applied field. It arises from the ambipolar term in the Nernst effect, whereby the Lorentz force on electrons and holes makes them drift in opposite directions so that the resulting Nernst voltage becomes a function of the difference between their partial thermopowers, greatly enhancing the ONE. It is proven that axis-dependent polarity can synergistically enhance the ONE, in addition to leading to a zero-field transverse thermoelectric performance.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Real-space visualization of short-range antiferromagnetic correlations in a magnetically enhanced thermoelectric

Short-range magnetic correlations can significantly increase the thermopower of magnetic semiconductors, representing a noteworthy development in the decades-long effort to develop high-performance thermoelectric materials. Here, we reveal the nature of the thermopower-enhancing magnetic correlations in the antiferromagnetic semiconductor MnTe. Using magnetic pair distribution function analysis of neutron scattering data, we obtain a detailed, real-space view of robust, nanometer-scale, antiferromagnetic correlations that persist into the paramagnetic phase above the Neel temperature $T_N$ = 307 K. In this work, the magnetic correlation length in the paramagnetic state is significantly longer along the crystallographic c axis than within the ab plane, pointing to anisotropic magnetic interactions. Ab initio calculations of the spin-spin correlations using density functional theory in the disordered local moment approach reproduce this result with quantitative accuracy. These findings constitute the first real-space picture of short-range spin correlations in a magnetically enhanced thermoelectric and inform future efforts to optimize thermoelectric performance by magnetic means.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Computationally Guided Discovery of Axis-Dependent Conduction Polarity in NaSnAs Crystals

Most electronic materials exhibit a single dominant charge carrier type, either holes or electrons, along all crystallographic directions. However, there are a small number of compounds, mostly metals, that exhibit simultaneous p-type and n-type conduction behavior along different crystallographic directions. We demonstrate that the experimental discovery of semiconductors with this axis-dependent conduction polarity can be facilitated by identifying a large anisotropy of either the electron or hole effective masses (m*) or both, providing the electron and hole masses dominate along different crystallographic directions. We calculated the layered semiconductor NaSnAs to have a lower electron m* in-plane than the cross-plane and a very large hole m* in-plane and small hole m* cross-plane. We established the growth of >3 mm-sized NaSnAs crystals via Sn flux and confirmed the band gap to be 0.65 eV, in agreement with theory. NaSnAs exhibits p-type thermopowers cross-plane and n-type thermopowers in-plane, confirming that the large anisotropy in the effective mass at the band edges is an excellent indicator for axis-dependent conduction polarity. Altogether, this work shows that the discovery of semiconductors with such a phenomenon can be accelerated by computationally evaluating the anisotropic curvatures of the band edges, paving the way for their future discovery and application.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2022

Colossal Nernst power factor in topological semimetal NbSb 2

Today solid-state cooling technologies below liquid nitrogen boiling temperature (77 K), crucial to quantum information technology and probing quantum state of matter, are greatly limited due to the lack of good thermoelectric and/or thermomagnetic materials. Here, we report the discovery of colossal Nernst power factor of 3800 × 10 -4 W m -1 K -2 under 5 T at 25 K and high Nernst figure-of-merit of 71 × 10 -4 K -1 under 5 T at 20 K in topological semimetal NbSb 2 single crystals. The observed high thermomagnetic performance is attributed to large Nernst thermopower and longitudinal electrical conductivity, and relatively low transverse thermal conductivity. The large and unsaturated Nernst thermopower is the result of the combination of highly desirable electronic structures of NbSb 2 having compensated high mobility electrons and holes near Fermi level and strong phonon-drag effect. This discovery opens an avenue for exploring material option for the solid-state heat pumping below liquid nitrogen temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Axis dependent conduction polarity in the air-stable semiconductor, PdSe 2

Axis-dependent conduction polarity (ADCP) is a unique electronic phenomena in which the charge polarity of carrier conduction can differ from p-type to n-type depending on the direction of travel through the crystal. Most materials that exhibit ADCP are metals, and very few semiconducting materials exhibit this effect. Here, in this work, we establish that PdSe 2 , a ~0.5 eV band gap semiconductor that is air- and water-stable, exhibits ADCP, through the growth and characterization of the transport properties of crystals with extrinsic p- and n-type doping levels of Ir and Sb, respectively, in the 10 16 –10 18 cm –3 range. Electron doped PdSe 2 exhibits p-type conduction in the cross-plane direction and n-type conduction along the in-plane directions above an onset temperature of 100–200 K that varies with doping level. Lightly p-doped samples show p-type thermopower in all directions at low temperatures, but above ~360 K the in-plane thermopower turns negative. Density functional theory calculations indicate that the origin of ADCP arises from the complementary effective mass anisotropies in the valence and conduction bands in this material, which facilitate hole transport in the cross-plane direction, and electron transport along the in-plane directions. ADCP occurs at temperatures with sufficient thermal population of both carrier types to overcome the extrinsic doping levels to exploit the effective mass anisotropy. In total, the development of this stable semiconductor in which thermally or optically excited holes and electrons inherently migrate along different directions opens up numerous potential applications in a multitude of technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Probing quantum criticality in ferromagnetic CeRh 6 Ge 4

CeRh 6 Ge 4 is unusual in that its ferromagnetic transition can be suppressed continuously to zero temperature, i.e., to a ferromagnetic quantum-critical point (QCP), through the application of modest hydrostatic pressure. This discovery has raised the possibility that the ferromagnetic QCP may be of the Kondo-breakdown type characterized by a jump in Fermi volume, to which thermopower S measurements should be sensitive. Further, though S/T changes both sign and magnitude around the critical pressure P c ≈ 0.8 GPa, these changes are not abrupt but extend over a pressure interval from within the ferromagnetic state up to P c . Together with temperature and pressure variations in electrical resistivity and previously reported heat capacity, thermopower results point to the near coincidence of two sequential effects near P c , delocalization of 4f degrees of freedom through orbital-selective hybridization followed by quantum criticality of itinerant ferromagnetism.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Magnetothermopower of Nodal-Line Semimetals

The search for materials with large thermopower is of great practical interest. Dirac and Weyl semimetals have recently proven to exhibit superior thermoelectric properties, particularly when subjected to a quantizing magnetic field. Here, we consider whether a similar enhancement arises in nodal-line semimetals, for which the conduction and valence band meet at a line or ring in momentum space. We compute the Seebeck and Nernst coefficients for arbitrary temperature and magnetic field and we find a wealth of different scaling regimes. Most strikingly, when a sufficiently strong magnetic field is applied along the direction of a straight nodal line or in the plane of a nodal ring, the large degeneracy of states leads to a large linear-in- B thermopower that is temperature independent even at low temperatures. Our results suggest that nodal-line semimetals may offer significant opportunity for efficient low-temperature thermoelectrics. Published by the American Physical Society 2024

Chakraborty, Poulomi (ORCID:0000000213969473)↗
DOE OSTI2020

Scanning Tunneling Thermometry

The best spatial resolution so far achieved in thermal imaging is several nanometers, much coarser than routinely achieved for other physical properties. Here we propose a method to map electronic temperature variations in operating nanoscale conductors by relying solely upon electrical tunneling current measurements. The proposed measurement scheme involves two scanning probe operations to measure the conductance and thermopower, respectively. These two measurements are shown to determine the local temperature with high accuracy in nanoscale conductors, where the Wiedemann-Franz law holds quite generally. We report the proposed scanning tunneling thermometer, owing to its operation in the tunneling regime, would be capable of mapping temperature variations with subnanometer resolution, thereby enhancing the resolution of scanning thermometry by some 2 orders of magnitude.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Ingredients for enhanced thermoelectric power at cryotemperatures in the correlated semiconductor CoSbS revealed by its optical response

The semiconducting CoSbS is well-known for its thermoelectric performance at high-temperatures but it is also of interest because of its colossal low-temperature thermopower. Here, we address the temperature dependence of its optical response over a broad spectral range, from which we reveal several ingredients determining the thermoelectric properties at cryo-temperatures. Furthermore, we discover co- herent phonon modes and with the additional support of scanning transmission electron microscopy investigations we provide evidences for in-gap impurity states driving the formation of correlated electrons in the valence band. Their implications, with respect to the high thermoelectric power at low temperatures, are discussed within the framework of the phonon-drag transport of low-mobility heavy quasiparticles.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗