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At least 37 records · Page 2

Polarity dependent heating at the phase interface in metal-insulator transitions

We show that in a model of a metal photoexcited by a transient pump pulse resonant with a phonon mode, the absolute dc conductivity may become negative, depending on the interplay between the electronic structure, the phonon frequency, and the pump intensity. The analysis includes the effects of inelastic scattering and thermal relaxation. Results for the time evolution of the negative conductivity state are presented; the associated nonequilibrium physics may persist for long times after the pulse. Furthermore, our findings provide a theoretical justification for previously proposed phenomenology and indicate new routes to the generation and exploration of intrinsically nonequilibrium states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Exploring the $A$-V-Sb landscape beyond $A$$\mathrm{V_3}$ $\mathrm{Sb_5}$: A case study on the $\mathrm{KV_6}$ $\mathrm{Sb_6}$ Kagome compound

Kagome compounds have garnered attention in the past few years for their intriguing magnetic properties arising from spin frustration dictated by the geometry of the Kagome sublattice. In this paper, we highlight the success of the unconventional hydride route for the fast and easy synthesis of the Kagome compound $\mathrm{KV_6}$ $\mathrm{Sb_6}$. Here, high-temperature in situ powder x-ray diffraction (PXRD) studies proved to be useful in hinting at the existence of $\mathrm{KV_6}$ $\mathrm{Sb_6}$, identifying its synthesis conditions, and understanding the reaction mechanism. The crystal structure for $\mathrm{KV_6}$ $\mathrm{Sb_6}$ was determined from high-resolution PXRD data. The compound has a layered structure [$R\overline{3}m, a = 5.5318$ (9) Å, $c = 34.23$ (3)Å 3 $Z = 3$] at room temperature] and features a Kagome bilayer of V atoms. $\mathrm{KV_6}$ $\mathrm{Sb_6}$ is isostructural to the previously reported $\mathrm{RbV_6}$ $\mathrm{Sb_6}$ and $\mathrm{CsV_6}$ $\mathrm{Sb_6}$ compounds. $\mathrm{KV_6}$ $\mathrm{Sb_6}$ is thermally stable in vacuum up to 1173 K, as evident from the high-temperature in situ PXRD and differential scanning calorimetric analysis. Investigation of magnetic properties for $\mathrm{KV_6}$ $\mathrm{Sb_6}$ between 2 and 300 K reveals temperature-independent paramagnetism and an absence of superconductivity, like the Rb and Cs analogs. Furthermore, we compare the magnetic properties of K V 3 Sb 5 , another ternary Kagome compound, synthesized via two different methods: the hydride route and the traditional route from elements. Low-temperature transport property measurements of $\mathrm{KV_6}$ $\mathrm{Sb_6}$ indicate metallic behavior and an intrinsically low thermal conductivity of $\mathrm{1.0 W K^-1}$ $\mathrm{m^-1}$ at 300 K. The layered structure of $\mathrm{KV_6}$ $\mathrm{Sb_6}$ makes it an attractive candidate for deintercalation and doping studies to tune both magnetic and transport properties, laying a foundation for further studies.

36 MATERIALS SCIENCE↗

On Stochastic Heating and Its Phase-space Signatures in Low-beta Kinetic Turbulence

We revisit the theory of stochastic heating of ions and investigate its phase-space signatures in kinetic turbulence of relevance to low- β portions of the solar wind. In particular, we retain a full scale-dependent approach in our treatment, and we explicitly consider the case in which electric-field fluctuations can be described by a generalized Ohm's law that includes Hall and thermoelectric effects. These two electric-field terms provide the dominant contributions to stochastic ion heating when the ion-Larmor scale is much smaller than the ion skin depth, ρ i << d i , which is the case at β << 1. Employing well-known spectral scaling laws for Alfvén-wave and kinetic-Alfvén-wave turbulent fluctuations, we obtain scaling relations characterizing the field-perpendicular particle-energization rate and energy diffusion coefficient associated with stochastic heating in these two regimes. Phase-space signatures of ion heating are then investigated using three-dimensional hybrid-kinetic simulations of continuously driven Alfvénic turbulence at low β (namely, β i = β e = 0.3 and β i = β e = 1/9). In these simulations, energization of ions parallel to the magnetic field is subdominant compared to its perpendicular counterpart ( Q ∥,i << Q ⊥,i ), and the fraction of turbulent energy that goes into ion heating is ≈75% at β i = 0.3 and ≈40% at β i ≃ 0.1. The phase-space signatures of ion energization are consistent with Landau-resonant collisionless damping and a ( β -dependent) combination of ion-cyclotron and stochastic heating. We demonstrate good agreement between our scale-dependent theory and various signatures associated with the stochastic portion of the heating. We discuss briefly the effect of intermittency on stochastic heating and the implications of our work for the interpretation of stochastic heating in solar-wind spacecraft data.

79 ASTRONOMY AND ASTROPHYSICS↗

Hydrodynamic thermoelectric transport in Corbino geometry

We study hydrodynamic electron transport in Corbino graphene devices. Due to the irrotational character of the flow, the forces exerted on the electron liquid are expelled from the bulk. We show that in the absence of Galilean invariance, force expulsion produces qualitatively new features in thermoelectric transport: (i) it results in drops of both voltage and temperature at the system boundaries and (ii) in conductance measurements in pristine systems, the electric field is not expelled from the bulk. We obtain thermoelectric coefficients of the system in the entire crossover region between charge neutrality and high electron density regime. The thermal conductance exhibits a sensitive Lorentzian dependence on the electron density. The width of the Lorentzian is determined by the fluid viscosity. Furthermore, this enables determination of the viscosity of electron liquid near charge neutrality from purely thermal transport measurements. In general, the thermoelectric response is anomalous: It violates the Matthiessen's rule, the Wiedemann-Franz law, and the Mott relation.

36 MATERIALS SCIENCE↗

Effects of aluminum content on thermoelectric performance of Al x CoCrFeNi high-entropy alloys

Introducing a non-regular distribution in the mass and bonding by including distinctly different elements can reduce the phonon transport even within structurally well-ordered materials. These distributions are a quality of all high-entropy alloys (HEAs), however the inclusion of aluminum in Al x CoCrFeNi is particularly impactful due to the large mismatch in atomic mass with other components. The resultant low phonon conductivity is a requirement for high thermoelectric performance, motivating the investigation of the effects of Al content on phonon transport as well as other thermoelectric properties. This work examines the phonon and electron transport and thermoelectric conversion properties with various Al contents (0 ≤ x Al ≤ 2) in this Cantor alloy using first-principles calculations, molecular dynamics, and semi-classical Boltzmann transport theory. The calculated phonon density of states and thermoelectric properties present reasonable agreements with experiments, including neutron scattering. A large reduction of phonon conductivity (k L ) is observed even with low x Al s, which we attribute to effective phonon scatterings by the large mass mismatch. However, its temperature dependence is not significant, demonstrating a minor contribution of interphonon scattering. In contrast, electrical conductivity (σ) and Seebeck coefficient (S) increase with temperature at higher x Al s with body-centered cubic structures. Therefore, the thermoelectric figure of merit (ZT) of Al x CoCrFeNi HEAs is enhanced by increasing the Al content mainly due to the increase of the thermoelectric power factor (σS 2 ) at high temperatures, while at low temperatures the phonon-scattering enhancement by mass mismatch is also important.

36 MATERIALS SCIENCE↗

Acoustoelectric drag current in vanadium oxide films

Two different Mott insulator wires, vanadium dioxide and vanadium sesquioxide, were prepared on the piezoelectric LiNbO 3 substrates. Coupling of acoustic waves propagating in LiNbO 3 with free carriers in vanadium oxide gives rise to the acoustoelectric effect that manifests itself as the generation of direct electric current by the acoustic wave. According to a phenomenological model, the value of the effect strongly depends on the wires conductivity, which, for the vanadium-oxide films, changes by a few orders of magnitude. We demonstrated that this yields a significant enhancement of the direct current (DC) current generated in the wires at the metal–insulator transition temperatures. The sign of the generated DC voltage is different for excitations by surface and bulk acoustic wave modes, which may happen due to reverse wave propagation at the substrate surface. For each resonance mode, polarities of the generated DC signal are the same in both wires, despite the signs of charge carriers being different for these materials. It was shown that two complementary techniques (acoustoelectric and Hall effect measurements) yield opposite signs of charge carriers in VO 2 .

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Microscopic formulas for thermoelectric transport coefficients in lattice systems

Here, a macroscopic description of thermoelectric phenomena involves several tensorial transport coefficients. Textbook microscopic Kubo formulas for them are plagued with ambiguities in the definitions of the current operators and the magnetization. We derive a version of these formulas for lattice systems that is free from ambiguities but contains additional terms compared to the textbook results. For symmetric components of thermoelectric tensors, we identify a large class of lattice systems for which the additional terms vanish with a natural choice of the energy current. To eliminate ambiguities in the skew-symmetric components, one needs to interpret them as relative quantities: only their differences for pairs of materials are well-defined.

36 MATERIALS SCIENCE↗

High-frequency phonons drive large phonon-drag thermopower in semiconductors at high carrier density

It has been well established that (i) the thermopower of semiconductors can be enhanced through a phe- nomenon known as the drag effect, and (ii) the drag enhancement involves only low-frequency acoustic phonons and benefits from low electron densities and low temperatures. Using first-principles calculations we show that large drag enhancements to the thermopower are possible at high carrier density even at room temperature and arise from high-frequency acoustic phonons. A fascinating example is cubic boron arsenide (BAs) for which the calculated room temperature drag enhancement of the thermopower exceeds an order of magnitude at a high hole density of 10 21 cm –3 . This remarkable behavior stems from the simultaneously weak phonon-phonon and phonon-hole scattering of the high-frequency phonons in BAs that become drag active at high carrier densities through electron-phonon interactions. Furthermore, this work advances our understanding of coupled electron-phonon nanoscale transport and introduces an unexpected paradigm for achieving large thermopowers.

36 MATERIALS SCIENCE↗

Spin Seebeck effect at low temperatures in the nominally paramagnetic insulating state of vanadium dioxide

The low temperature monoclinic, insulating phase of vanadium dioxide is ordinarily considered nonmagnetic, with dimerized vanadium atoms forming spin singlets, though paramagnetic response is seen at low temperatures. Here, we find a nonlocal spin Seebeck signal in VO 2 films that appears below 30 K and that increases with a decrease in temperature. The spin Seebeck response has a nonhysteretic dependence on the in-plane external magnetic field. This paramagnetic spin Seebeck response is discussed in terms of prior findings on paramagnetic spin Seebeck effects and expected magnetic excitations of the monoclinic ground state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Epitaxial growth of rock salt MgZrN 2 semiconductors on MgO and GaN

Ternary nitride compound semiconductors have attracted recent attention as electronic materials since their properties can be tuned by cation stoichiometry and ordering. A recently discovered example is MgZrN 2 , a ternary analog to the rock salt semiconductor ScN. MgZrN 2 has a larger bandgap and stronger dielectric response than the binary compound. Polycrystalline thin films of MgZrN 2 have been studied, but demonstration of high-quality growth is still required to establish its suitability for technological applications. Here, we report on epitaxial growth of MgZrN 2 thin films on (100) and (111) MgO substrates and (001) GaN templates. The MgZrN 2 composition is confirmed by Rutherford backscattering spectrometry, showing no oxygen in the film except for a thin surface oxide layer. Epitaxial growth results in MgZrN 2 with x-ray diffraction rocking curves with a full-width at half-maximum in the range of 0.3–3.0°, depending on the substrate. Transmission electron microscopy analysis of the MgZrN 2 film grown on a (111) MgO substrate confirms epitaxial growth and shows a sharp film/substrate interface. In-plane temperature-dependent Hall effect measurements show that the material is an n-type semiconductor with a relatively high concentration ( n 300K ≈ 10 19 –10 20 cm -3 ) of thermally activated electrons. Room-temperature transport measurements show a conductivity of 25 S cm -1 and a Seebeck coefficient of -80 μ V K -1 . Overall, these results provide an important step toward integration of rock salt MgZrN 2 with other technological nitrides for device applications.

36 MATERIALS SCIENCE↗

High-Performance Thermoelectric Generators for Field Deployments

Thermoelectric power generation is a reliable energy harvesting technique for directly converting heat into electricity. Recent studies have reported the thermal-to-electrical energy conversion efficiency of thermoelectric generators (TEGs) up to 11% under laboratory settings. However, the practical effectiveness of TEGs deployed under real environments is still not more than a few percent. In this study, we provide fundamental insight on the operation of TEGs in realistic environments by illustrating the combinatory effect of thermoelectric material properties, device boundary conditions, and environmental thermal resistivity on TEG performance in conjunction with the module parameters. Using numerical and experimental studies, we demonstrate the existence of a critical heat transfer coefficient that dramatically affects the design and performance of TEGs. Results provide a set of concrete design criteria for developing efficient TEGs that meet the metrics for field deployments. High-performance TEGs demonstrated in this study generated up to 28% higher power and 162% higher power per unit mass of thermoelectric materials as compared to the commercial module deployed for low-grade waste heat recovery. This advancement in understanding the TEG operation will have a transformative impact on the development of scalable thermal energy harvesters and in realizing their practical targets for efficiency, power density, and total output power.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Anomalous Hall effect in the weak-itinerant ferrimagnet FeCr 2 Te 4

In this study, we carried out a comprehensive study of electronic transport, thermal, and thermodynamic properties in Fe Cr 2 Te 4 single crystals. It exhibits bad-metallic behavior and anomalous Hall effect (AHE) below a weak-itinerant paramagnetic-to-ferrimagnetic transition T c ~ 123 K. The linear scaling between the anomalous Hall resistivity ρ x y and the longitudinal resistivity ρ x x implies that the AHE in Fe Cr 2 Te 4 is most likely dominated by an extrinsic skew-scattering mechanism rather than an intrinsic KL or an extrinsic side-jump mechanism, which is supported by our Berry phase calculations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Validation of galvanomagnetic and thermomagnetic transport measurements using Standard Reference Material 3451

In the “method of four coefficients,” electrical resistivity (ρ), Seebeck coefficient (S), Hall coefficient (RH), and Nernst coefficient (Q) of a material are measured and typically fit or modeled with theoretical expressions based on Boltzmann transport theory to glean experimental insights into features of electronic structure and/or charge carrier scattering mechanisms in materials. Although well-defined and readily available reference materials exist for validating measurements of ρ and S, none currently exists for R H or Q. We show that measurements of all four transport coefficients—ρ, S, R H , and Q—can be validated using a single reference sample, namely, the low-temperature Seebeck coefficient Standard Reference Material® (SRM) 3451 (composition Bi 2 Te 3+x ) available from the National Institute for Standards and Technology (NIST) without the need for inter-laboratory sample exchange. Here, R H and Q data for NIST SRM 3451 reported here for the temperature range 80–400 K complement the data already available for ρ and S and will therefore be of interest to researchers desiring to validate new or existing galvanomagnetic and thermomagnetic transport properties measurement systems.

47 OTHER INSTRUMENTATION↗

High Thermoelectric Performance in Chalcopyrite Cu 1-x Ag x GaTe 2 –ZnTe: Nontrivial Band Structure and Dynamic Doping Effect

The understanding of thermoelectric properties of ternary I–III–VI 2 type (I = Cu, Ag; III = Ga, In; and VI = Te) chalcopyrites is less well developed. Although their thermal transport properties are relatively well studied, the relationship between the electronic band structure and charge transport properties of chalcopyrites has been rarely discussed. In this study, we reveal the unusual electronic band structure and the dynamic doping effect that could underpin the promising thermoelectric properties of Cu 1–x Ag x GaTe 2 compounds. Density functional theory (DFT) calculations and electronic transport measurements suggest that the Cu 1–x Ag x GaTe 2 compounds possess an unusual non-parabolic band structure, which is important for obtaining a high Seebeck coefficient. Moreover, a mid-gap impurity level was also observed in Cu 1–x Ag x GaTe 2 , which leads to a strong temperature-dependent carrier concentration and is able to regulate the carrier density at the optimized value for a wide temperature region and thus is beneficial to obtaining the high power factor and high average ZT of Cu 1–x Ag x GaTe 2 compounds. We also demonstrate a great improvement in the thermoelectric performance of Cu 1–x Ag x GaTe 2 by introducing Cu vacancies and ZnTe alloying. The Cu vacancies are effective in increasing the hole density and the electrical conductivity, while ZnTe alloying reduces the thermal conductivity. As a result, a maximum ZT of 1.43 at 850 K and a record-high average ZT of 0.81 for the Cu 0.68 Ag 0.3 GaTe 2 –0.5%ZnTe compound are achieved.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Visualization of bulk and edge photocurrent flow in anisotropic Weyl semimetals

Materials that rectify light into current in their bulk are desired for optoelectronic applications. In Weyl semimetals that break inversion symmetry, bulk photocurrents may arise due to nonlinear optical processes that are enhanced near the Weyl nodes. However, the photoresponse of these materials is commonly studied by scanning photocurrent microscopy, which convolves the effects of photocurrent generation and collection. Here we directly image the photocurrent flow inside the type-II Weyl semimetals WTe 2 and TaIrTe 4 using high-sensitivity quantum magnetometry with nitrogen-vacancy centre spins. We elucidate a mechanism for bulk photocurrent generation, which we call the anisotropic photothermoelectric effect, where unequal thermopowers along different crystal axes drive intricate circulations of photocurrent around the photoexcitation. Using overlapping scanning photocurrent microscopy and magnetic imaging at the interior and edges of the sample, we visualize how the anisotropic photothermoelectric effect stimulates the long-range photocurrent collected in our WTe 2 and TaIrTe 4 devices through the Shockley–Ramo mechanism. Furthermore, our results highlight a widely relevant source of current flow and will inspire photodetectors that utilize bulk materials with thermoelectric anisotropy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗