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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Optically thick GaInAs/GaAsP strain-balanced quantum-well tandem solar cells with 29.2% efficiency under the AM0 space spectrum

GaAs is often used as a multijunction subcell due to its high material quality on GaAs substrates, despite having a non-optimal bandgap. The bandgap can be beneficially reduced using many layers of thin, strain-balanced GaInAs in a superlattice or quantum well device, but achieving excellent carrier collection without increased recombination has proven challenging. Here, we develop and demonstrate high performance, optically thick GaInAs/GaAsP strain-balanced solar cells. Excellent material quality is achieved in thick superlattices by using growth conditions that limit progressive thickness and composition fluctuations. Bandgap-voltage offsets as low as 0.31V are shown in superlattice cells using thin, highly strained GaP barriers. Optically thick superlattice cells with over 2500 nm of total GaInAs in the depletion region are developed, enabling 3.8 mA/cm 2 of extra photocurrent beyond the GaAs band edge under the AM0 space spectrum. Optimized superlattice solar cells are incorporated into two-junction devices that achieve 29.2% efficiency under the AM0 space spectrum due to their improved bandgap combination and high subcell voltages.

14 SOLAR ENERGY↗
DOE OSTI2024

Photoluminescence Excitation Spectroscopy of Monolithic Perovskite/Silicon Tandem Solar Cells

The contributions of each subcell to the total photoluminescence (PL) spectrum of a monolithic perovskite/silicon tandem solar cell are distinguished using a variable wavelength excitation laser source. Here, in the results, a strong overlap of the PL spectrum is shown, originating from the sub‐bandgap region of the perovskite top cell with the emission from the silicon bottom cell, even with near‐infrared excitation wavelengths. Consequently, an excitation laser wavelength of at least 815 nm is required for a dominant PL signal from the silicon bottom cell, and a wavelength no longer than 750 nm is needed for a dominant PL signal from the perovskite top cell in the investigated tandem solar cell. Moreover, a shoulder in the sub‐bandgap emission of the perovskite top cell almost coincides with the PL response region of the silicon bottom cell, which can cause signal confusion in subcell characterization.

14 SOLAR ENERGY↗
DOE OSTI2021

Fundamentals of Three-Terminal Tandem Solar Cells: a Comprehensive Taxonomy

Three-terminal tandem (3TT) solar cells can overcome some of the limitations of two- and four-terminal tandem designs. However, the coupled nature of the cells adds a degree of complexity to the devices themselves and the ways that their performance can be measured and reported. To facilitate understanding, we have developed a taxonomy which encompasses all types of 3TT devices, enabling a common nomenclature for discussing devices and performance. Once the physical devices, contact nodes, and loading circuitry have been self-consistently described, it becomes apparent that a wide range of 3TT devices share a common set of design and operating principles.

3T↗
DOE OSTI2022

Carrier control in Sn–Pb perovskites via 2D cation engineering for all-perovskite tandem solar cells with improved efficiency and stability

All-perovskite tandem solar cells are promising for achieving photovoltaics with power conversion efficiencies above the detailed balance limit of single-junction cells, while retaining the low cost, light weight and other advantages associated with metal halide perovskite photovoltaics. However, the efficiency and stability of all-perovskite tandem cells are limited by the Sn-Pb-based narrow-bandgap perovskite cells. Here we show that the formation of quasi-two-dimensional (quasi-2D) structure (PEA) 2 GAPb 2 I 7 from additives based on mixed bulky organic cations phenethylammonium (PEA+) and guanidinium (GA+) provides critical defect control to substantially improve the structural and optoelectronic properties of the narrow-bandgap (1.25 eV) Sn-Pb perovskite thin films. Additionally, this 2D additive engineering results in Sn-Pb-based absorbers with low dark carrier density (~1.3 x 10 14 cm -3 ), long bulk carrier lifetime (~9.2 us) and low surface recombination velocity (~1.4 cm s -1 ), leading to 22.1%-efficient single-junction Sn-Pb perovskite cells and 25.5%-efficient all-perovskite two-terminal tandems with high photovoltage and long operational stability.

14 SOLAR ENERGY↗
DOE OSTI2021

Relaxed Current Matching Requirements in Highly Luminescent Perovskite Tandem Solar Cells and Their Fundamental Efficiency Limits

Perovskite-based tandem solar cells are of increasing interest as they approach commercialization. Here we use experimental parameters from optical spectroscopy measurements to calculate the limiting efficiency of perovskite–silicon and all-perovskite two-terminal tandems, employing currently available bandgap materials, as 42.0% and 40.8%, respectively. We show luminescence coupling between subcells (the optical transfer of photons from the high-bandgap to low-bandgap subcell) relaxes current matching when the high-bandgap subcell is a luminescent perovskite. We calculate that luminescence coupling becomes important at charge trapping rates (=10 6 s -1 ) already being achieved in relevant halide perovskites. Luminescence coupling increases flexibility in subcell thicknesses and tolerance to different spectral conditions. For maximal benefit, the high-bandgap subcell should have the higher short-circuit current under average spectral conditions. This can be achieved by reducing the bandgap of the high-bandgap subcell, allowing wider, unstable bandgap compositions to be avoided. Lastly, we visualize luminescence coupling in an all-perovskite tandem through cross-section luminescence imaging.

14 SOLAR ENERGY↗
DOE OSTI2024

Ultra-High Efficiency and Stable All-Perovskite Tandem Solar Cells

In the project period, the research team has fabricated more than 6,000 single-junction wide-bandgap (wide-E g ) and low-bandgap (low-E g ) perovskite solar cells (PSCs) and more than 2,000 all-perovskite tandem solar cells (APTSCs). The best-performing wide-E g and low-E g PSCs and APTSCs showed PCEs greater than 19%, 23%, and 30%, respectively. The average PCEs for wide-E g and low-E g PSCs and APTSCs fabricated by the benchmark processes are (18.5 ± 0.4)%, (21.9 ± 0.8)%, and (26.8 ± 2.1)%, respectively. We have demonstrated APTSCs with T 80 lifetime of more than 1,000 h, which were measured by maximum power point tracking (MPPT) under one sun operation in the air. The team has also utilized various advanced characterization techniques to study the optical and electrical properties of wide-E g and low-E g perovskite materials and devices, developing a better understanding of the unique working principle and degradation mechanism of APTSCs. The team has met most GNG decision criteria except for the stability goal of APTSCs under 85 °C/85 RH accelerated lifetime test (ALT). The shortfall of the device ALT stability is mainly limited by the intrinsic instability of Sn-Pb perovskites under illumination at elevated temperatures. The team discussed with stakeholders in the PV academic and industry about these durability concerns and concluded that this is the major technical barrier preventing the market entry of APTSCs. Future fundamental study and R&D work are needed to advance this promising technology.

14 SOLAR ENERGY↗
NASA NTRS1988

High efficiency GaAs/Ge monolithic tandem solar cells

Two-terminal monolithic tandem cells consisting of a GaAs solar cell grown epitaxially on a Ge solar cell substrate are very attractive for space applications. Tandem cells of GaAs grown by metal-organic chemical vapor deposition on thin Ge were investigated to address both higher efficiency and reduced weight. Two materials growth issues associated with this heteroepitaxial system, autodoping of the GaAs layers by Ge and diffusion of Ga and As into the Ge substrate, were addressed. The latter appears to result in information of an unintentional p-n junction in the Ge. Early simulator measurements gave efficiencies as high as 21.7 percent for 4 cm2 GaAs/Ge cells, but recent high-altitude testing has given efficiencies of 18 percent. Sources of errors in simulator measurements of two-terminal tandem cells are discussed. A limiting efficiency of about 36 percent for the tandem cell at AMO was calculated. Ways to improve the performance of present cells, primarily by increasing the Isc and Voc of the Ge cell, are proposed.

Tobin, S. P.↗
DOE OSTI2024

Perovskite/Silicon Tandem Solar Cells: Insights and Outlooks

Organic-inorganic hybrid perovskites have been widely used in silicon-based tandem solar cells for their advantages of tunable bandgap, high light absorption coefficient, and high power conversion efficiency (PCE). However, the maximum PCE of perovskite/silicon tandem solar cells (PSTSCs) is still below the theoretical limit. This Review describes the PSTSCs' working principle and then summarizes the research progress in recent years, including a comparison of perovskite layers, interconnection layers, and silicon bottom cells. Then, the n-i-p PSTSCs and p-i-n PSTSCs are presented based on the PSCs' top cells, and the main factors affecting the efficiency of PSTSCs are discussed in detail. Finally, an outlook on the future development of PSTSCs is discussed.

electrical conductivity↗
DOE OSTI2022

Gradient Doping in Sn–Pb Perovskites by Barium Ions for Efficient Single-Junction and Tandem Solar Cells

Narrow bandgap tin-lead (NBG Sn-Pb) perovskites generally have a high density of unintentional p-type self-doping, which reduces the charge carrier lifetimes, diffusion lengths and device efficiencies. Here, we demonstrate a p-n homojunction across the Sn-Pb perovskite resulted from a gradient doping by Ba 2+ . We report that 0.1 mol% Ba 2+ can effectively compensate the p-doping of Sn-Pb perovskites or even turns it to n-type without changing its bandgap. Ba 2+ cations are found to stay at the interstitial sites and work as shallow electron donor. In addition, Ba 2+ cations show a unique heterogeneous distribution in perovskite film. Most of the barium ions stay in the top 600 nanometer region of the perovskite films and turn it into weakly n-type, while the bottom portion of the film remains to be p-type. The gradient doping forms of a homojunction from top to bottom of the perovskite films with a built-in field that facilitates extraction of photogenerated carriers, resulting an increased carrier extraction length. Furthermore, this strategy enhanced the efficiency of Sn-Pb perovskite single-junction solar cells to over 21.0% and boosted the efficiencies of monolithic perovskite-perovskite tandem solar cells to 25.3% and 24.1%, for active areas of 5.9 mm2 and 0.94 cm 2 , respectively.

14 SOLAR ENERGY↗
NASA NTRS1994

Electron-irradiated two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells and annealing of radiation damage

Radiation damage results from two-terminal monolithic InP/Ga(0.47)In(0.53)As tandem solar cells subject to 1 MeV electron irradiation are presented. Efficiencies greater than 22 percent have been measured by the National Renewable Energy Laboratory from 2x2 sq cm cells at 1 sun, AMO (25 C). The short circuit current density, open circuit voltage and fill factor are found to tolerate the same amount of radiation at low fluences. At high fluence levels, slight differences are observed. Decreasing the base amount of radiation at the Ga(0.47)In(0.53)As bottomcell improved the radiation resistance of J(sub sc) dramatically. This is turn, extended the series current flow through the subcell substantially up to a fluence of 3x10(exp 15) cm(exp -2) compared to 3x10(exp 14) cm(exp -2), as observed previously. The degradation of the maximum power output form tandem device is comparable to that from shallow homojunction (SHJ) InP solar cells, and the mechanism responsible for such degradation is explained in terms of the radiation response of the component cells. Annealing studies revealed that the recovery of the tandem cell response is dictated by the annealing characteristics exhibited by SHJ InP solar cells.

Cotal, H. L.↗
DOE OSTI2022

Subcell Coupling in Tandem Solar Cells: Measurements and Modeling

Closely stacking two or more photovoltaic (PV) subcells together to form tandem solar cells inevitably results in subcell coupling that is important to understand. Here we describe how this coupling can be modeled and characterized for two-, three-, and four-terminal tandems (hereafter 2T, 3T or 4T).

2T↗
DOE OSTI2021

Reducing sputter induced stress and damage for efficient perovskite/silicon tandem solar cells

Reducing damages caused by sputtering of transparent conductive oxide (TCO) electrodes is critical in achieving highly efficient and stable perovskite/silicon tandem solar cells. Here we study the sputter caused damage to bathocuproine (BCP), which is widely used in highly efficient p-i-n structure single junction perovskite solar cells. While BCP buffer layer protects the underneath layers from damage, itself can be damaged by sputtering of TCOs at a wide range of target-substrate distances, supported by molecular dynamic simulation. More intriguingly, it is observed that TCO easily peeled off after sputtering when the sputtering target is close to substrate. This is ascribed to formation of stress during cooling down process after sputtering due to different thermal expansion coefficients of the layers. Our studies explain why tin oxide (SnO2) made by atomic layer deposition can replace BCP for a much better tandem device performance. SnO2 has high affinity with sputtered TCO electrode to suppress peeling-off issue and has higher bond energy to resist sputter induced damage, thus it allows a wider window of target-substrate distances than BCP during TCO sputtering. Ultimately, we demonstrate an efficient perovskite/silicon monolithic tandem solar cell with efficiency of 26.0% to illustrate the beneficial effects of reduced stress and damage.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Four–Terminal Perovskite–CdSeTe Tandem Solar Cells: From 25% toward 30% Power Conversion Efficiency and Beyond

Thin-film tandem photovoltaic (PV) technology has emerged as a promising avenue to enhance power conversion efficiency beyond the radiative efficiency limit of single-junction devices. Combining a tunable wide-bandgap perovskite cell with a commercially established narrow-bandgap cadmium selenium telluride (CdSeTe) cell in a comparatively easy-to-fabricate four-terminal (4-T) arrangement is a great step in that direction. Herein, the impact of the transparent back contact and the perovskite absorber bandgap on the performance of 4-T perovskite–CdSeTe tandem solar cells is investigated. 4-T perovskite–CdSeTe tandem device architecture with ≈25% efficiency is demonstrated and a feasible pathway is shown to improve the tandem efficiency to more than 30%. Furthermore, the results show that the integration of CdSeTe with perovskite in 4-T tandem PV configurations represents a significant advancement toward achieving higher efficiency and low-cost tandem PVs.

14 SOLAR ENERGY↗
DOE OSTI2024

Advances in Mixed Tin‐Lead Narrow‐Bandgap Perovskites for Single‐Junction and All‐Perovskite Tandem Solar Cells

Abstract Organic–inorganic metal‐halide perovskites have received great attention for photovoltaic (PV) applications owing to their superior optoelectronic properties and the unprecedented performance development. For single‐junction PV devices, although lead (Pb)‐based perovskite solar cells have achieved 26.1% efficiency, the mixed tin‐lead (Sn‐Pb) perovskites offer more ideal bandgap tuning capability to enable an even higher performance. The Sn‐Pb perovskite (with a bandgap tuned to ≈1.2 eV) is also attractive as the bottom subcell for a tandem configuration to further surpass the Shockley–Queisser radiative limit for the single‐junction devices. The performance of the all‐perovskite tandem solar cells has gained rapid development and achieved a certified efficiency up to 29.1%. In this article, the properties and recent development of state‐of‐the‐art mixed Sn‐Pb perovskites and their application in single‐junction and all‐perovskite tandem solar cells are reviewed. Recent advances in various approaches covering additives, solvents, interfaces, and perovskite growth are highlighted. The authors also provide the perspective and outlook on the challenges and strategies for further development of mixed Sn‐Pb perovskites in both efficiency and stability for PV applications.

14 SOLAR ENERGY↗
DOE OSTI2022

Defect engineering in wide-bandgap perovskites for efficient perovskite–silicon tandem solar cells

Wide-bandgap (WBG) mixed-halide perovskites show promise of realizing efficient tandem solar cells but at present suffer from large open-circuit voltage loss and the mechanism is still unclear. Here we show that WBG perovskites with iodide–bromide compositions have an increased concentration of deep traps induced by iodide interstitials, which limits performance of WBG perovskite cells. We employ tribromide ions to suppress the iodide interstitial formation and thus reduce charge recombination in bladed WBG perovskite films of Cs 0.1 FA 0.2 MA 0.7 Pb(I 0.85 Br 0.15 )3. The 1-µm-thick opaque WBG perovskite solar cells have an efficiency of 21.9%, a small open-circuit voltage deficit of 0.40 V and a large fill factor of 83%. The efficiency of the best-performing monolithic perovskite–silicon tandem cell using this perovskite reaches 28.6%. Furthermore, the tribromide addition also suppresses light-induced phase segregation in WBG perovskites and thus enhance device stability. Encapsulated tandem cells maintain 93% of their initial efficiency after operation for 550 h.

14 SOLAR ENERGY↗
DOE OSTI2021

23.4% monolithic epitaxial GaAsP/Si tandem solar cells and quantification of losses from threading dislocations

A 2-terminal, dual-junction, epitaxially integrated, GaAsP/Si tandem solar cell with an 3rd party certified efficiency of 23.4 % was fabricated via MOCVD growth on an ex-situ produced Si sub cell. The drastic efficiency improvement over the authors previous peer-reviewed demonstration of such a device architecture is examined. Critical advancements in top cell design to maximize short wavelength response were critical in enabling improved top cell response. An in-depth analysis of this champion tandem cell has identified key loss mechanisms which elucidate the pathway for further efficiency gains. First, voltage dependent collection efficiency in the GaAsP top cell is the primary cause of fill factor losses currently limiting efficiency. Analysis of spectrally resolved I–V measurements and analytical device modeling and indicate poor diffusion length due to elevated dislocation densities as the likely cause for the voltage dependent collection efficiency. Second, modeling for the GaAs 0.75 P 0.25 top cell, using experimental data at multiple dislocation densities, provides quantitative understanding of the current and voltage losses associated with threading dislocations providing a clear efficiency pathway with reduction in dislocation density. Finally, Si subcell modeling identifies the pathway for further Si subcell advances over the present, simplistic design, which has yet to employ the known benefits of rear surface texture or dielectric passivation.

14 SOLAR ENERGY↗