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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Reliability Improvement and Effective Switching Layer Model of Thin-Film MoS 2 Memristors

2D memristors have demonstrated attractive resistive switching characteristics recently but also suffer from the reliability issue, which limits practical applications. Previous efforts on 2D memristors have primarily focused on exploring new material systems, while damage from the metallization step remains a practical concern for the reliability of 2D memristors. Here, the impact of metallization conditions and the thickness of MoS 2 films on the reliability and other device metrics of MoS 2 -based memristors is carefully studied. The statistical electrical measurements show that the reliability can be improved to 92% for yield and improved by ≈16× for average DC cycling endurance in the devices by reducing the top electrode (TE) deposition rate and increasing the thickness of MoS 2 films. Intriguing convergence of switching voltages and resistance ratio is revealed by the statistical analysis of experimental switching cycles. An “effective switching layer” model compatible with both monolayer and few-layer MoS 2 , is proposed to understand the reliability improvement related to the optimization of fabrication configuration and the convergence of switching metrics. In conclusion, the Monte Carlo simulations help illustrate the underlying physics of endurance failure associated with cluster formation and provide additional insight into endurance improvement with device fabrication optimization.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Heteroepitaxial control of thickness, strain, and domain architecture in few-layer ferroelectric tin monochalcogenides

Thin-film epitaxy and epitaxial strain have been widely exploited to tune domain configurations, switching behavior, and ferroic properties in conventional three-dimensional ferroelectric thin films; however, its application to controlling the properties of two-dimensional (2D) ferroelectrics has remained largely unexplored. Here, using SnX (X = Se, S) as a model system, we demonstrate heteroepitaxial control of thickness, strain state, and domain architecture in few-layer ferroelectric SnX via growth on monolayer MoS2 van der Waals (vdW) templates. Compared with conventional growth, MoS2-templated heteroepitaxy promotes epitaxial alignment, yielding ultrathin SnSe films with improved crystalline quality, full areal coverage, and enlarged lateral dimensions. Strong interfacial epitaxial coupling induces pronounced in-plane strain and stabilizes a hierarchical ferroelastic domain architecture, in which long-range 90° stripe domains are further subdivided into nanoscale rotational variants, as revealed by scanning transmission electron microscopy and synchrotron X-ray microscopy. Piezoresponse force microscopy and second-harmonic polarimetry confirm robust in-plane polarization, while ferroelectricity in SnSe is established through polarization-electric field hysteresis and nonvolatile ferroelectric resistive switching with on/off ratios approaching 1000. A nonvolatile, switchable ferroelectric diode effect further evidences direct coupling between polarization and charge transport. Notably, ferroelectric switchability exhibits a strong thickness dependence and is preserved only below ∼10 layers. This vdW heteroepitaxial strategy is further extended to ferroelectric SnS. The seamless heteroepitaxial integration of 2D ferroelectrics with CMOS-compatible, wafer-scale MoS2 templates provides a general and scalable route for strain-enabled structural and ferroelectric engineering in emerging memory and low-power optoelectronic applications.

Wang, Yueyin↗
DOE OSTI2024

High-temperature quantum valley Hall effect with quantized resistance and a topological switch

Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. In this work, we show wide resistance plateaus in kink states—a manifestation of the quantum valley Hall effect in Bernal bilayer graphene—quantized to the predicted value at zero magnetic field. The plateau resistance has a very weak temperature dependence up to 50 kelvin and is flat within a dc bias window of tens of millivolts. We demonstrate the electrical operation of a topology-controlled switch with an on/off ratio of 200. These results demonstrate the robustness and tunability of the kink states and its promise in constructing electron quantum optics devices.

Science & Technology - Other Topics↗
DOE OSTI2022

Electrical and structural properties of binary Ga–Sb phase change memory alloys

Material properties of Ga–Sb binary alloy thin films deposited under ultra-high vacuum conditions were studied for analog phase change memory (PCM) applications. Crystallization of this alloy was shown to occur in the temperature range of 180–264 °C, with activation energy >2.5 eV depending on the composition. X-ray diffraction (XRD) studies showed phase separation upon crystallization into two phases, Ga-doped A7 antimony and cubic zinc-blende GaSb. Synchrotron in situ XRD analysis revealed that crystallization into the A7 phase is accompanied by Ga out-diffusion from the grains. X-ray absorption fine structure studies of the local structure of these alloys demonstrated a bond length decrease with a stable coordination number of 4 upon amorphous-to-crystalline phase transformation. Mushroom cell structures built with Ga–Sb alloys on ø110 nm TiN heater show a phase change material resistance switching behavior with resistance ratio >100 under electrical pulse measurements. TEM and Energy Dispersive Spectroscopy (EDS) studies of the Ga–Sb cells after ∼100 switching cycles revealed that partial SET or intermediate resistance states are attained by the variation of the grain size of the material as well as the Ga content in the A7 phase. A mechanism for a reversible composition control is proposed for analog cell performance. These results indicate that Te-free Ga–Sb binary alloys are potential candidates for analog PCM applications.

Ume, Rubab (ORCID:0000000324766900)↗
DOE OSTI2023

Switching current reduction in magnetoresistive random access memories

We present an approach for minimizing the critical current for the magnetization switching in magnetic tunnel junctions by optimizing the spatial distribution of the current density. We show that such a minimization is possible because critical current is determined by the condition of making one of the magnetization eigenstates grow in time. The excitation of the eigenstates is enhanced when the spatial distributions of the eigenstates and current density overlap. Critical current can be viewed as a functional of the current density spatial distribution and it can be minimized by optimizing this distribution. Such an optimization results in a major reduction of the critical current and increase of the switching efficiency, viz. the ratio between the energy barrier and critical current. The minimized critical current increases approximately linearly with the magnetic tunnel junction size, which is much slower than critical current for the case of a uniform current density. The optimized efficiency can be approximately a constant with respect to the magnetic tunnel junction size, which is much higher than the efficiency for the uniform current density. Additional optimization can be achieved by spatially modulating the material parameters, e.g., the saturation magnetization. The presented approach and obtained scaling of the critical current and efficiency offers opportunities for the magnetic tunnel junction optimization.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Progress toward picosecond on-chip magnetic memory

Here, we offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ~3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ~6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.

42 ENGINEERING↗
DOE OSTI2024

Variation Tolerant and Energy-Efficient Charge Domain Compute-in-Memory Array with Binary and Multi-Level Cell Ferroelectric FET

Here, in this work, we present a variation-tolerant and energy-efficient charge-domain Ferroelectric FET (FeFET) based Compute-in-Memory (CiM) array design that is compatible with both binary and multi-level cell memory sensing. We demonstrate that: 1) by exploiting FeFET as a nonvolatile switch, its high ON/OFF ratio in the subthreshold region can suppress the error introduced by the inaccurate ON state conductance, thus realizing robust CiM operations, unlike the current-domain CiM design where the computation results is highly sensitive to the device conductance variation; 2) by leveraging a dense dynamic random access memory (DRAM)-like 1FeFET1C cell structure, the proposed design benefits from the existing high density DRAM establishment while also significantly relaxing the capacitor retention and transistor leakage requirement; 3) the charge-domain CiM supports both binary FeFET with minimum overhead and MLC FeFET with tolerable latency for MLC state sensing, whose efficacy is validated experimentally on both cell-level and array-level; 4) the proposed CiM shows much better device variation resilience than conventional current-domain CiM, and also improves inference accuracy. Macro-level evaluation results demonstrate significantly higher energy efficiency and area efficiency compared to prior CiM works.

Duan, Jiahui [University of Notre Dame, IN (United↗
DOE OSTI2021

Comprehensive Efficiency Analysis of Current Source Inverter Based on CSI-Type Double Pulse Test and Genetic Algorithm

A current-source inverter (CSI) has a natural output voltage boost feature that can be advantageous for traction applications. Switching frequency is one of the easily-controlled variables that can be adjusted to improve the CSI efficiency at different operating points when the boost function is used. This paper investigates a CSI-based double-pulse test (DPT) measurement that mimics normal operation of the CSI. A loss model of the CSI is developed based on the CSI-type DPT experimental results. The impacts of the switching frequency and voltage boost ratio on the CSI efficiency and output voltage ripple are investigated. Based on the loss model, a genetic algorithm has been introduced that makes it possible to optimize the CSI's switching frequency and modulation index to maximize its efficiency under any desired operating condition.

current-source inverter, genetic algorithm, SPM ma↗
DOE OSTI2021

Tailoring magnetization reversal of a single-domain bar nanomagnet via its end geometry

Nanoscale single-domain bar magnets are building blocks for a variety of fundamental and applied mesoscopic magnetic systems, such as artificial spin ices, magnetic shape-morphing microbots, and magnetic majority logic gates. The magnetization reversal switching field of the bar nanomagnets is a crucial parameter that determines the physical properties and functionalities of their constituted artificial systems. Previous methods on tuning the magnetization reversal switching field of a bar nanomagnet usually relied on modifying its aspect ratio, such as its length, width, and/or thickness. Here, we show that the switching field of a bar nanomagnet saturates when extending its length beyond a certain value, preventing further tailoring of the magnetization reversal via aspect ratios. We showcase a highly tunable switching field of a bar nanomagnet by tailoring its end geometry without altering its size. This provides an easy method to control the magnetization reversal of a single-domain bar nanomagnet. It would enable new research and/or applications, such as designing artificial spin ices with additional tuning parameters, engineering magnetic microbots with more flexibility, and developing magnetic quantum-dot cellular automata systems for low power computing.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Bottom‐Up Synthesized Nanoporous Graphene Transistors

Abstract Nanoporous graphene (NPG) can exhibit a uniform electronic band gap and rationally‐engineered emergent electronic properties, promising for electronic devices such as field‐effect transistors (FETs), when synthesized with atomic precision. Bottom‐up, on‐surface synthetic approaches developed for graphene nanoribbons (GNRs) now provide the necessary atomic precision in NPG formation to access these desirable properties. However, the potential of bottom‐up synthesized NPG for electronic devices has remained largely unexplored to date. Here, FETs based on bottom‐up synthesized chevron‐type NPG (C‐NPG), consisting of ordered arrays of nanopores defined by laterally connected chevron GNRs, are demonstrated. C‐NPG FETs show excellent switching performance with on–off ratios exceeding 10 4 , which are tightly linked to the structural quality of C‐NPG. The devices operate as p‐type transistors in the air, while n‐type transport is observed when measured under vacuum, which is associated with reversible adsorption of gases or moisture. Theoretical analysis of charge transport in C‐NPG is also performed through electronic structure and transport calculations, which reveal strong conductance anisotropy effects in C‐NPG. The present study provides important insights into the design of high‐performance graphene‐based electronic devices where ballistic conductance and conduction anisotropy are achieved, which could be used in logic applications, and ultra‐sensitive sensors for chemical or biological detection.

Mutlu, Zafer↗
DOE OSTI2021

Biomaterial–Based Solid–Electrolyte Organic Electrochemical Transistors for Electronic and Neuromorphic Applications

In this work a systematic study of biomaterial–based solid–state organic electrochemical transistors (OECTs) is presented in which biogels consisting of gelatin and glycerol, two food–grade materials, are chosen as the model solid electrolyte. Such gels are fundamentally attractive for bioelectronics and wearable applications due to their superior and tunable electrical and mechanical properties, which allow one to fabricate solid–state organic transistors with high ON/OFF ratio and transconductance, possible millisecond–switching speed, and 6–month stability in ambient air. Next, the authors show a good control of the state–retention property of biogel OECTs, demonstrated herein by employing them as artificial synapses with various synaptic functions, such as frequency–based short–term plasticity. This study herein paves the way for the development of biomaterial–based electronics by providing guiding principles for future works that employ biomaterials in OECTs.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Integration of CeO 2 -Based Memristor with Vertically Aligned Nanocomposite Thin Film: Enabling Selective Conductive Filament Formation for High-Performance Electronic Synapses

The CeO 2 -based memristor has attracted significant attention due to its intrinsic resistive switching (RS) properties, large on/off ratio, and great plasticity, making it a promising candidate for artificial synapses. However, significant challenges such as high power consumption and poor device reliability hinder its broad application in neuromorphic microchips. To tackle these issues, in this work, we design a novel bilayer (BL) memristor by integrating a CeO 2 -based memristor with a Co-CeO 2 vertically aligned nanocomposite (VAN) layer and compare it with the single layer (SL) memristor. Preliminary electrical testing reveals that the BL memristor offers a reduced set/reset voltage (~67% lower), a higher on/off ratio (~5 × 10 2 ), enhanced device reliability, and improved device-to-device variation compared to the SL memristor. Insight from COMSOL simulation, coupled with microstructural analysis, provides a comprehensive elucidation on how the VAN layer facilitates the selective conductive filament (CF) formation. Subsequently, the plasticity of the BL memristor is evaluated through long-term potentiation/depression (LTP/LTD), paired-pulse facilitation (PPF), and spike-time-dependent plasticity (STDP). The spiking neural network (SNN) built upon the BL memristor achieves remarkable accuracy (~94%) after only 12 iterations, underscoring its potential for high-performance neural networks.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

DualSPHysics-INL

Funded by the DOE's Bioenergy Technology Office through the Feedstock-Conversion Interface Consortium, INL researchers developed this code to model biomass freestock flow in various handling equipment, such as hoppers and augers. Built on top of an existing open-source code DualSPHysics (https://dual.sphysics.org/) , the enrichment includes modification of the mass conservation equation that switching tracking density to void ratio, adding a hypoplastic constitutive law to better capture the flow physics of this type of material and implementing a novel boundary condition that can handle the dynamic contact between material and equipment. All implementation were realized via Nvidia CUDA, so GPU accelaration can be leveraged to signifiantly speed up the computational process.

Jin, Wencheng [Idaho National Laboratory (INL), Id↗
DOE OSTI2024

Development and performance evaluation of active insulation systems using solid-state thermal switches

Traditional building envelopes have passive insulation systems that cannot respond to dynamic changes in the environment. An Active Insulation System (AIS) consists of Active Insulation Materials (AIMs) that dynamically vary the thermal conductivity of the insulation system. Several researchers have evaluated the impact of AIS on building thermal and energy performance by using simulation tools. Up to 70% savings in annual heating and cooling energy and significant reductions in peak demand have been predicted for some climates with wall systems employing AIS. However, materials and assembly development still need a cost-effective product that achieves the required performance. Here, in this study, we present the process of developing an AIS that we will install in a test hut for its performance evaluation. Minimum performance criteria of the AIS system are developed based on R-low/R-high ratio, required time and efficiency to switch states, and cost estimates. The following steps during this study are creating the concept to meet the requirements, predicting the performance via simulations, developing the experimental setup for bench-scale testing, and finally, constructing a full-scale wall assembly and monitoring the performance when exposed to environmental chamber tests. The selected approach uses off-the-shelf products to create an AIS that can switch R-value between 0.98 ft 2 ·°F·h/BTU (0.173 m 2 ·K/W) and 5.81 ft 2 ·°F·h/BTU (1.02 m 2 ·K/W) and have a switching time of less than one minute between R-high and R-low.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2022

Development and Performance Evaluation of of Active Insulation Systems using Solid-State Thermal Switches

Traditional building envelopes have passive insulation systems that cannot respond to dynamic changes in the environment. An Active Insulation System (AIS) consists of Active Insulation Materials (AIMs), which dynamically vary the thermal conductivity of the insulation system. Several researchers have evaluated the impact of AIS on building thermal and energy performance by using simulation tools. Up to 70% savings in annual heating and cooling energy and significant reductions in peak demand have been predicted for some climates with wall systems employing AIS. Sensitivity studies have provided requirements for the AIS properties and control schemes that can lead to those savings. However, materials and assembly development have not yet achieved a cost-effective product that achieves the required performance. In this study, we present the process to develop an AIS that we will install in a test hut for their performance evaluation. Minimum performance criteria of the AIS system are developed based on Rmin/Rmax ratio, required time and efficiency to switch states and cost estimate. The next step carried out during this study is creating the concept to meet the requirements, predicting the performance by simulations, developing the experimental setup for bench-scale testing, and finally, constructing a full-scale wall assembly and monitoring the performance when exposed to natural weather conditions. The selected approach uses off-the-shelf products to create a materials system that can switch R-value between R~=1 ft2·°F·h/BTU (0.18 m2·K/W) and R~=7 ft2·°F·h/BTU (1.23 m2·K/W and have a switching time of less than one minute between R-high and R-low.

Iffa, Emishaw↗
DOE OSTI2022

Modeling Isothermal Reduction of Iron Ore Pellet Using Finite Element Analysis Method: Experiments & Validation

Iron ore pellet reduction experiments were performed with pure hydrogen (H2) and mixtures with carbon monoxide (CO) at different ratios. For direct reduction processes that switch dynamically between reformed natural gas and hydrogen as the reductant, it is important to understand the effects of the transition on the oxide reduction kinetics to optimize the residence time of iron ore pellets in a shaft reactor. Hence, the reduction rates were studied by varying experimental parameters such as the temperature (800, 850 & 900 °C), reactant gas flow rate (100, 150 & 200 cm3/min), pellet size and composition of the reactant gas mixture. The rate of reduction was observed to increase with an increase in temperature and reactant gas flow rate, but it decreased with an increase in pellet size. SEM greyscale analysis was performed to analyze the porosity and phase composition of partially reduced pellets. The porosity of the pellets was observed to increase from 0.3 for unreacted pellet to 0.42 for a completely reduced pellet. Energy-dispersive X-ray spectroscopy (EDAX) analysis was performed to identify the phases observed in the SEM images. The fraction of iron phase was observed to increase from the shell region of the pellet to the core region with an increase in the degree of reduction. A 2D-axisymmetric numerical model was developed on COMSOL Multiphysics, and it was validated using the conversion (X) vs. time curves obtained from each experiment. The model was able to accurately predict the total time needed for the complete conversion of a single iron ore pellet for multiple experiments. Effects of changes in the porosity and tortuosity of the pellet on the model were also studied and the rate of reduction was observed to be sensitive to changes in both porosity and tortuosity. The SEM analysis and the model results show that tortuosity is higher for pellets reduced with H2 than for pellets reduced with H2-CO gas mixtures.

08 HYDROGEN↗
DOE OSTI2024

Dynamic operation of metal-supported solid oxide electrolysis cells

Symmetric-structure metal-supported solid oxide fuel cells and electrolysis cells (MS-SOFCs, MS-SOECs) offer several advantages over conventional solid oxide cells, including the use of inexpensive materials, high mechanical strength, and rapid ramp-up ability. Aggressive operation of MS-SOCs in fuel cell mode is well-established, including extremely fast start-up, redox tolerance, and imbalanced pressure. Here, we extend dynamic operation to MS-SOCs in SOEC mode with high steam content for both small button cells and a large rectangular cell, including: steam cycling, thermal cycling, redox cycling and power cycling. Steam cycling entailed switching between 3:97 and 50:50 steam:hydrogen ratio. For thermal cycling, the temperature was rapidly varied between 150°C and 700°C for 50 cycles. Redox cycling involved switching the steam side gas between 50 % humidified H 2 and 50 % humidified N 2 for 5 cycles. Power cycling was performed by operating the cell under variable current density, resulting in cell voltage between 1.3V and 2.8V. Degradation rates for each testing strategy were compared to a baseline cell, and found to be similar. In conclusion, the excellent tolerance to dynamic operation increases confidence that MS-SOECs will be compatible with dynamic or intermittent renewable resources.

08 HYDROGEN↗