SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Radio frequency switching technique for single receiver and data processing channel to be used for phase movement measurement is discussed. Components of interferometer radio frequency unit, X-band receiver, and interferometer data processing unit are illustrated. Elimination of major measurement error source is described.
The analytical model for the device drain-source turn-on overvoltage in three-level active neutral point clamped (3L-ANPC) converters is established in this paper. Considering the two commutation loops in the converter, the relationship between the overvoltage and the loop inductances is evaluated. The line switching frequency device usually exhibits higher overvoltage, while the high switching frequency device is not strongly influenced by the multiple loops. A 500 kVA 3L-ANPC converter using SiC MOSFETs is tested, and the model is verified with the experimental results.
Dc to dc converters which operate reliably and efficiently at switching frequencies high enough to effect substantial reductions in the size and weight of converter energy storage elements are studied. A two winding current or voltage stepup (buck boost) dc-to-dc converter power stage submodule designed to operate in the 2.5-kW range, with an input voltage range of 110 to 180 V dc, and an output voltage of 250 V dc is emphasized. In order to assess the limitations of present day component and circuit technologies, a design goal switching frequency of 10 kHz was maintained. The converter design requirements represent a unique combination of high frequency, high voltage, and high power operation. The turn off dynamics of the primary circuit power switching transistor and its associated turn off snubber circuitry are investigated.
A dc to dc converter which can start with a shorted output and which regulates output voltage and current is described. Voltage controlled switches directed current through the primary of a transformer the secondary of which includes virtual reactance. The switching frequency of the switches is appropriately varied to increase the voltage drop across the virtual reactance in the secondary winding to which there is connected a low impedance load. A starting circuit suitable for voltage switching devices is provided.
The feasibility of satisfying the switching requirements for a megawatt ultralight inverter system using HOLLOTRON switch technology was determined. The existing experimental switch hardware was modified to investigate a coaxial HOLLOTRON switch configuration and the results were compared with those obtained for a modified linear HOLLOTRON configuration. It was concluded that scaling the HOLLOTRON switch to the current and voltage specifications required for a megawatt converter system is indeed feasible using a modified linear configuration. The experimental HOLLOTRON switch operated at parameters comparable to the scaled coaxial HOLLOTRON. However, the linear HOLLOTRON data verified the capability for meeting all the design objectives simultaneously including current density (greater than 2 A/sq cm), voltage (5 kV), switching frequency (20 kHz), switching time (300 ns), and forward voltage drop (less than or equal to 20 V). Scaling relations were determined and a preliminary design was completed for an engineering model linear HOLLOTRON switch to meet the megawatt converter system specifications.
Five power filters and two types of power amplifiers were tested for use with active magnetic bearings for flywheel applications. Filter topologies included low pass filters and low pass filters combined with trap filters at the PWM switching frequency. Two state and three state PWM amplifiers were compared. Each system was evaluated based on current magnitude at the switching frequency, voltage magnitude at 500 kHz, and power consumption. The base line system was a two state amplifier without a power filter. The recommended system is a three state power amplifier with a 50 kHz low pass filter and a 27 kHz trap filter. This system uses 5.57 W. It reduces the switching current by an order of magnitude and the 500 kHz voltage by two orders of magnitude. The relative power consumption varied depending on the test condition between 60 to 130 percent of the baseline.
The current and voltage waveshapes associated with the power transitor and the power diode in an example current-or-voltage step-up (buck-boost) converter were analyzed to highlight the problems and possible tradeoffs involved in the design of high voltage high power converters operating at switching frequencies in the range of 100 Khz. Although the fast switching speeds of currently available power diodes and transistors permit converter operation at high switching frequencies, the resulting time rates of changes of current coupled with parasitic inductances in series with the semiconductor switches, produce large repetitive voltage transients across the semiconductor switches, potentially far in excess of the device voltage ratings. The need is established for semiconductor switch protection circuitry to control the peak voltages appearing across the semiconductor switches, as well as to provide the waveshaping action require for a given semiconductor device. The possible tradeoffs, as well as the factors affecting the tradeoffs that must be considered in order to maximize the efficiency of the converters are enumerated.
Three dc-to-dc converter topologies aimed at high-power high-frequency applications are introduced. Major system parasitics, namely, the leakage inductance of the transformer and the device output capacitance are efficiently utilized. Of the three circuits, the single-phase and three-phase versions of the dual active bridge topology demonstrate minimal stresses, better utilization of the transformer, bidirectional, and buck-boost modes of operation. All circuits operate at a constant switching frequency, thus simplifying design of the reactive elements. The power transfer characteristics and soft-switching regions on the Vout-Iout plane are identified. Two coaxial transformers with different cross-sections were built for a rating of 50 kVA. Based on the single-phase dual active bridge topology, a 50 kW, 50 kHz converter operating at an input voltage of 200 Vdc and an output voltage of 1600 Vdc was fabricated. Characteristics of current-fed output make the dual active bridge topologies amenable to paralleling and hence extension to megawatt power levels. Projections to a 1 MW system operating from a 500 Vdc input, at an output voltage of 10 kVdc and a switching frequency of 50 kHz, using MOS-controlled thyristors, coaxially wound transformers operating at three times the present current density with cooling, and multilayer ceramic capacitors, suggests an overall power density of 0.075 to 0.08 kg/kW and an overall efficiency of 96 percent.
The development of 5 kW converters with 100 kHz switching frequencies, consisting of two submodules each capable of 2.5 kW of output power, is discussed. Two semiconductor advances allowed increased power levels. Field effect transistors with ratings of 11 A and 400 V were operated in parallel to provide a converter output power of approximately 2000 W. Secondly, bipolar power switching transistor was operated in conjunction with a turn-off snubber circuit to provide converter output power levels approaching 1000 W. The interrelationships between mass, switching frequency, and efficiency were investigated. Converters were constructed for operation at a maximum output power level of 200 W, and a comparison was made for operation under similar input/output conditions for conversion frequencies of 20 kilohertz and 100 kilohertz. The effects of nondissipative turn-off snubber circuitry were also examined. Finally, a computerized instrumentation system allowing the measurement of pertinent converter operating conditions as well as the recording of converter waveforms is described.
Frequency shifting, commonly used in electronic signal processing, is applied in tuning, automatic frequency control, antenna element switching, phase shifting, etc. Frequency shifting can be accomplished economically and reliably with simple circuit comprising conventional resistor and solid-state switching device which can be equivalent to two capacitors, depending on switching state.
The S2 VLBI system synthesizes wide IF bandwidths by rapidly switching the local oscillator (LO) frequency in a small (1-4) number of baseband converters (BBC's). Data are recorded on video cassettes using an array of 8 VHS transports. Characteristics of the S2 Data Acquisition System (DAS), the S2 Record and Playback Terminals (RT and PT) and the S2 Correlator are summarized. The bandwidth synthesis (BWS) frequency switching sequence used in a series of system validation experiments is presented.
Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.
Ultrafast directional beam switching is achieved using coupled VCSELs. This approach is demonstrated to achieve beam switching frequencies of 40 GHz and more and switching directions of about eight degrees. This switching scheme is likely to be useful for ultrafast optical networks at frequencies much higher than achievable with other approaches.
A steerable multibeam five element cross-feed cluster antenna system is described. The feed power is divided into five branches. Each branch includes a switching network comprised of a plurality of time delay elements each individually controlled by a respective electromagnetic latching switch. Frequency independent individual two-dimensional beam steering at intermediate (IF) scanning frequencies is thereby provided wherein discrete incremental time delays are introduced by the switching networks into each branch and the signals recombined thereafter to form each beam. The electromagnetic latched switching reduces power consumption and permits higher power switching and reciprocal coincident tranmsit and receive operation. Frequency independence due to incremental time delay switching permits coincident reciprocal operation and steering for transmit-receive signal paths carrying different transmit-receive frequencies. Diagonal quarter wave plates in the waveguides alter polarization from the circular to orthogonal linear to provide transmitter-receiver isolation.
Monolithic GaAs microwave switch matrices for use in satellite switched, time division multiple access communication systems were developed. Two monolithic GaAs MESFET switch matrices were fabricated; one for switching operation at intermediate frequencies, 3.5 to 6.0 GHz, and another for switching at radio frequencies, 17.7 to 20.2 GHz. Key switch parameters were measured for both switch matrices.
Monolithic GaAs microwave switch matrices for use in satellite switched, time division multiple access communication systems were developed. Two monolithic GaAs MESFET switch matrices were fabricated; one for switching operation at intermediate frequencies, 3.5 to 6.0 GHz, and another for switching at radio frequencies, 17.7 to 20.2 GHz. Key switch parameters were measured for both switch matrices.
We report a precision and fast wavelength tuning technique demonstrated for a digital-supermode distributed Bragg reflector laser. The laser was dynamically offset-locked to a frequency-stabilized master laser using an optical phase-locked loop, enabling precision fast tuning to and from any frequencies within a ~40-GHz tuning range. The offset frequency noise was suppressed to the statically offset-locked level in less than ~40 s upon each frequency switch, allowing the laser to retain the absolute frequency stability of the master laser. This technique satisfies stringent requirements for gas sensing lidars and enables other applications that require such well-controlled precision fast tuning.
Ultrafast directional beam switching, using coupled vertical cavity surface emitting lasers (VCSELs) is combined with a light modulator to provide information transfer at bit rates of tens of GHz. This approach is demonstrated to achieve beam switching frequencies of 32-50 GHz in some embodiments and directional beam switching with angular differences of about eight degrees. This switching scheme is likely to be useful for ultrafast optical networks at frequencies much higher than achievable with other approaches. A Mach-Zehnder interferometer, a Fabry-Perot etalon, or a semiconductor-based electro-absorption transmission channel, among others, can be used as a light modulator.