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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Every Good Virtue You Ever Wanted in a Q-switched Solid-state Laser and More: Monolithic, Diode-pumped, Self-q-switched, Highly Reproducible, Diffraction-limited Nd:yag Laser

The applications of Q-switched lasers are well known, for example, laser radar, laser remote sensing, satellite orbit determination, Moon orbit and 'moon quake' determination, satellite laser communication, and many nonlinear optics applications. Most of the applications require additional properties of the Q-switched lasers, such as single-axial and/or single-transverse mode, high repetition rate, stable pulse shape and pulse width, or ultra compact and rugged oscillators. Furthermore, space based and airborne lasers for lidar and laser communication applications require efficient, compact, lightweight, long-lived, and stable-pulsed laser sources. Diode-pumped solid-state lasers (DPSSL) have recently shown the potential for satisfying all of these requirements. We will report on the operating characteristics of a diode-pumped, monolithic, self-Q-switched Cr,Nd:YAG laser where the chromium ions act as a saturable absorber for the laser emission at 1064 nm. The pulse duration is 3.5 ns and the output is highly polarized with an extinction ratio of 700:1. It is further shown that the output is single-longitudinal-mode with transform-limited spectral line width without pulse-to-pulse mode competition. Consequently, the pulse-to-pulse intensity fluctuation is less than the instrument resolution of 0.25 percent. This self-stabilization mechanism is because the lasing mode bleaches the distributed absorber and establishes a gain-loss grating similar to that used in the distributed feedback semiconductor lasers. A repetition rate above 5 KHz has also been demonstrated. For higher power, this laser can be used for injection seeding an amplifier (or amplifier chain) or injection locking of a power oscillator pumped by diode lasers. We will discuss some research directions on the master oscillator for higher output energy per pulse as well as how to scale the output power of the diode-pumped amplifier(s) to multi-kilowatt average power.

Chen, Y. C.↗
DOE OSTI2021

Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common- Drain Bidirectional Switch Topologies

Bidirectional, or four-quadrant switches (FQS) can be designed as back-to-back MOSFETs connected in common-drain (CD) or common-source (CS) topologies. CDFQS and CS-FQS assembled from discrete 1.2 kV commercially available SiC power MOSFETs were characterized to obtain capacitance and switching loss values. The CD-FQS exhibited a 1.17x larger turn-on loss compared to the CS-FQS, while the CS-FQS exhibited a 1.52x larger turn-off loss compared to the CD-FQS. The CS-FQS exhibited a lower input capacitance, while the CD-FQS exhibited a lower output and reverse transfer capacitance.

Silicon Carbide, Bidirectional Switch, Switching P↗
DOE OSTI2023

Safety Related Concerns with Installation and Use of Switch-Rated Plug/Receptacle Combinations in Lieu of Metal-Enclosed Disconnect Switches

The manufacturers of Nationally Recognized Testing Laboratory (NRTL) listed, switch-rated, plug and receptacle combinations tout their convenience, reliability, efficiency, and compliance with both the National Fire Protection Association (NFPA) 70®, National Electric Code (NEC), and National Fire Protection Association 70E®, The Standard for Electrical Safety in the Workplace, as advantages to using these products in lieu of traditional metal-enclosed disconnect switches. The purpose of this paper is to raise awareness of several unintended consequences that can result when replacement involves high energy cord and plug connected equipment. This paper describes several possible issues in complying with the NFPA 70 Articles 110 and 400 and NFPA 70E Articles 110 and 130 that should be considered when using load rated plug/receptacle combinations. This paper is intended to address high energy circuits typically associated with 480 volt pin and sleeve type connections in applications where incident energy levels may exceed 1.2 calories/centimeter² (cal/cm²).

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2022

Electronegative metal dopants improve switching variability in Al 2 ⁢O 3 resistive switching devices

Resistive random-access memories are promising for nonvolatile memory and brain-inspired computing applications. High variability and low yield of these devices are key drawbacks hindering reliable training of physical neural networks. In this paper, we show that doping an oxide electrolyte, Al 2 ⁢O 3 , with electronegative metals makes resistive switching significantly more reproducible, surpassing the reproducibility requirements for obtaining reliable hardware neuromorphic circuits. Based on density functional theory calculations, the underlying mechanism is hypothesized to be the ease of creating oxygen vacancies in the vicinity of electronegative dopants due to the capture of the associated electrons by dopant midgap states and the weakening of Al-O bonds. These oxygen vacancies and vacancy clusters also bind significantly to the dopant, thereby serving as preferential sites and building blocks in the formation of conducting paths. Throughout this work, we validate this theory experimentally by implanting different dopants over a range of electronegativities in devices made of multiple alternating layers of Al 2 ⁢O 3 and WN and find superior repeatability and yield with highly electronegative metals, Au, Pt, and Pd. These devices also exhibit a gradual SET transition, enabling multibit switching that is desirable for analog computing.

36 MATERIALS SCIENCE↗
DOE OSTI2024

High-temperature quantum valley Hall effect with quantized resistance and a topological switch

Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. In this work, we show wide resistance plateaus in kink states—a manifestation of the quantum valley Hall effect in Bernal bilayer graphene—quantized to the predicted value at zero magnetic field. The plateau resistance has a very weak temperature dependence up to 50 kelvin and is flat within a dc bias window of tens of millivolts. We demonstrate the electrical operation of a topology-controlled switch with an on/off ratio of 200. These results demonstrate the robustness and tunability of the kink states and its promise in constructing electron quantum optics devices.

Science & Technology - Other Topics↗
NASA NTRS1967

Hybrid solid state switch replaces motor- driven power switch

Hybrid solid state switch replaces existing motor-driven power switches used on spacecraft. It uses a transistor circuit to limit the open circuit voltage and allow small relay contacts to handle high transient currents at reasonable cycle life.

Booth, R. A.↗
NASA NTRS1993

Characteristics of switching plasma in an inverse-pinch switch

Characteristics of the plasma that switches on tens of giga volt-ampere in an inverse-pinch plasma switch (INPIStron) have been made. Through optical and spectroscopic diagnostics of the current carrying plasma, the current density, the motion of current paths, dominant ionic species have been determined in order to access their effects on circuit parameters and material erosion. Also the optimum operational condition of the plasma-puff triggering method required for azimuthally uniform conduction in the INPIStron has been determined.

Lee, Ja H.↗
NASA NTRS2002

MEMS, Ka-Band Single-Pole Double-Throw (SPDT) Switch for Switched Line Phase Shifters

Ka-band MEMS doubly anchored cantilever beam capacitive shunt devices are used to demonstrate a MEMS SPDT switch fabricated on high resistivity silicon (HRS) utilizing finite ground coplanar waveguide (FGC) transmission lines. The SPDT switch has an insertion loss (IL), return loss (RL), and isolation of 0.3dB, 40dB, and 30 dB, respectively at Ka-band.

Scardelletti, Maximilian C.↗
DOE OSTI2025

Testing of Novel Semiconductor Opening Switches Using Magnetic Switching

The performance of semiconductor opening switch (SOS) diodes with different doping profiles is assessed with the primary aim of enhancing or substituting hard-to-find devices. SOS devices are capable of providing long lifetime, gigawatt level pulses in generators with risetimes on the nanosecond scale with pulse widths on the order of 20 ns. An experimental testbed is described which allows for rapid testing of diodes with control of the forward pumping time which is a crucial parameter of SOS diodes. A saturable pulse transformer provides both the initial voltage multiplication and reverse current pulse required to drive SOS diodes. Voltage multiplication ratios of 16:1 were achieved with a modest charging voltage of 800 V and simple circuitry. With current densities of up to 1.4 kA ⋅ cm -2 , the testbed produces 10 kV output pulses into a 56 Ω load with a pulsewidth of 16 ns and delivered power of up to 1.9 MW. These novel devices are compared to legacy SOS diodes originating from Russia, with one of the profiles yielding increased performance. Finally, these profiles are studied in hopes of creating manufacturing demand to augment the availability of these useful devices.

drift step recovery diodes↗
DOE OSTI2021

Submonolayer Is Enough: Switching Reaction Channels on Pt/SiO 2 by Atomic Layer Deposition

The reaction mechanism of CO 2 with H 2 is studied on platinum nanoparticles supported on fumed silica. It is found that platinum nanoparticle size, reaction temperature, and metal oxide promoters play important roles in determining the reaction rate and the mechanism of forming surface carbonyl species. Metal oxide promoters consist of sub-monolayer titanium oxide or aluminum oxide overcoated onto the catalysts by atomic layer deposition (ALD). Furthermore, these alter the CO formation rate, influence the adsorption and desorption behavior, and switch the surface reaction channel from Eley-Rideal to Langmuir-Hinshelwood mechanism due to an enhancement of CO 2 affinity to the metal-metal oxide interface. At the temperatures relevant for catalytic turnover, ALD overcoating significantly increases catalytic activity in CO 2 hydrogenation to CH 4 and CO, while the identity of the oxide overcoat helps control product selectivity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1974

Evaluation report for toggle switches: Micro Switch and Cutler-Hammer models per MIL-S-3950

Several models of hermetically sealed toggle switches meeting the requirements of MIL-S-3950, were evaluated to determine the probability that they would withstand the environmental requirements of, and therefore be suitable for use on, the space shuttle vehicle. The evaluation was started with a comparison of the environmental requirements for space shuttle hardware. This was followed with in-house testing for those environments where a reasonably firm conclusion could not be drawn in the comparison. Space simulation, acceleration, and vibration testing were performed in-house.

Labberton, D.↗
NASA NTRS1979

Characterization of the Q-switched MOBLAS Laser Transmitter and Its Ranging Performance Relative to a PTM Q-switched System

A prototype Q-switched Nd:YAG laser transmitter intended for use in the NASA mobile laser ranging system was subjected to various tests of temporal pulse shape and stability, output energy and stability, beam divergence, and range bias errors. Peak to peak variations in the mean range were as large as 30 cm and drift rates of system bias with time as large as 6 mm per minute of operation were observed. The incorporation of a fast electro-optic cavity dump into the oscillator gave significantly improved results. Reevaluation of the ranging performance after modification showed a reduction in the peak to peak variation in the mean range to the 2 or 3 cm level and a drift rate of system time biases of less than 1 mm per minute of operation. A qualitative physical explanation for the superior performance of cavity dumped lasers is given.

Degnan, J. J., III↗
NASA NTRS1997

Stability of Large Direct-Current Power Systems That Use Switching Converters and the Application of Switching Converters to the International Space Station

As direct-current space power systems continue to grow in size, switching power converters are playing an ever larger role in power conditioning and control. When a large direct-current system that uses power converters of this type is being designed, special attention must be placed on the electrical stability of the system and of the individual loads on the system. The impedance specification approach for system stability was accomplished as a result of cooperative work of the International Space Station program team, which consists of the NASA Lewis Research Center, the Boeing Company, and Rocketdyne Division/Rockwell International. In addition, major contributions were provided by the Virginia Polytechnic Institute and State University working under a grant to NASA Lewis.

Manners, Bruce A.↗