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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Development of Leaky Wave Antennas for Layered Ridge Dielectric Waveguide

The millimeter wave, especially above 100 GHz, and the submillimeter wave frequency spectrum offers the possibility for narrow-beam, high-resolution antennas which are critical for high definition radars required for space debris tracking, airport ground avoidance radars, and missile tracking. In addition, the frequency which most atmospheric constituents may be detected lie in this part of the frequency spectrum. Therefore, the development of electronic components for millimeter/submillimeter wave passive sensors is required for environmental monitoring of the Earth's atmosphere. Typical microwave transmission lines such as microstrip and coplanar waveguide rely on two or more electrical conductors to concentrate and guide the electromagnetic energy. Unfortunately, the surface resistance of the conductors increases as the square root of frequency. In addition, the circuit dimensions must be decreased with increasing frequency to maintain a single mode transmission line which further increases the conductor loss. An alternative family of transmission lines are formed from two or more insulating materials and rely on the differences in the permittivities between the two materials to guide the wave. No metal conductors are required although some dielectric waveguides do utilize a metallic ground plane to facilitate the interconnections of active electrical elements or to reduce the transmission line size. Examples of such transmission lines are image guides, insulated image guides, trapped image guides, ridge guide, and layered ridge dielectric waveguide (LRDW). Although most dielectric waveguides have dimensions on the order of lambda to provide sufficient field confinement, the LRDW has been shown to provide good field confinement for electrically small lines. This offers an advantage in circuit integration. It has been shown that a periodic array of metallic strips placed either along or on top of a dielectric waveguide forms an effective radiator. This antenna is easy to fabricate and there is good background of microstrip type antenna design information in the literature. This paper reports the development of the first frequency scanning antenna fed by a LRDW.

Ponchak, George E.↗
NASA NTRS2008

Split-Block Waveguide Polarization Twist for 220 to 325 GHz

A split-block waveguide circuit that rotates polarization by 90 has been designed with WR-3 input and output waveguides, which are rectangular waveguides used for a nominal frequency range of 220 to 325 GHz. Heretofore, twisted rectangular waveguides equipped with flanges at the input and output have been the standard means of rotating the polarizations of guided microwave signals. However, the fabrication and assembly of such components become difficult at high frequency due to decreasing wavelength, such that twisted rectangular waveguides become impractical at frequencies above a few hundred gigahertz. Conventional twisted rectangular waveguides are also not amenable to integration into highly miniaturized subassemblies of advanced millimeter- and submillimeter-wave detector arrays now undergoing development. In contrast, the present polarization- rotating waveguide can readily be incorporated into complex integrated waveguide circuits such as miniaturized detector arrays fabricated by either conventional end milling of metal blocks or by deep reactive ion etching of silicon blocks. Moreover, the present split-block design can be scaled up in frequency to at least 5 THz. The main step in fabricating a splitblock polarization-rotating waveguide of the present design is to cut channels having special asymmetrically shaped steps into mating upper and lower blocks (see Figure 1). The dimensions of the steps are chosen to be consistent with the WR-3 waveguide cross section, which is 0.864 by 0.432 mm. The channels are characterized by varying widths with constant depths of 0.432, 0.324, and 0.216 mm and by relatively large corner radii to facilitate fabrication. The steps effect both a geometric transition and the corresponding impedance-matched electromagnetic-polarization transition between (1) a WR-3 rectangular waveguide oriented with the electric field vector normal to the block mating surfaces and (2) a corresponding WR-3 waveguide oriented with its electric field vector parallel to the mating surfaces of the blocks. A prototype has been built and tested. Figure 2 presents test results indicative of good performance over nearly the entire WR-3 waveguide frequency band.

Ward, John↗
NASA NTRS2002

Submillimeter Laboratory Investigations: Spectroscopy and Collisions

Currently, millimeter-wave and submillimeter-wave spectroscopy is conducted in our laboratory on several different types of spectrometers. Our standard spectrometer utilizes the output of a phase-locked klystron operating in the 40-60 GHz region, which is sent into a crossed-waveguide harmonic generator, or "multiplier". The high frequency millimeter-and submillimeter-wave radiation is transmitted via quasi-optical techniques through an absorption cell and then onto a detector, which is either an InSb hot electron bolometer cooled to 1.4 K or a Si bolometer cooled to 0.3 K. The detector response is sent to a computer for measurement and analysis. The frequency range produced and detected in this manner goes from 80 GHz to upwards of 1 THz. Spectra are normally taken with source modulation, with line frequencies typically measured to an accuracy of 50-100 kHz. Higher accuracy is available when needed. Recently, we developed a new, broad-band spectrometer in our laboratory based on a free-running backward wave oscillator (BWO) of Russian manufacture as the primary source of radiation. The so-called FASSST (fast-scan submillimeter spectroscopic technique) system uses fast-scan and optical calibration methods rather than the traditional locking techniques. The output power from the BWO is split such that 90% goes into the absorption cell while 10% is coupled to a 40-meter Fabry-Perot cavity, which yields fringe? for frequency measurement. Results from this spectrometer on the spectrum of nitric acid (HNO3) show that 100 GHz of spectral data can be obtained in 5 seconds with a measurement accuracy of 50 kHz. Currently, the frequency range of the FASSST system in our laboratory is roughly 100-700 GHz.

Herbst, Eric↗
NASA NTRS2011

Compact Submillimeter-Wave Receivers Made with Semiconductor Nano-Fabrication Technologies

Advanced semiconductor nanofabrication techniques are utilized to design, fabricate and demonstrate a super-compact, low-mass (<10 grams) submillimeter-wave heterodyne front-end. RF elements such as waveguides and channels are fabricated in a silicon wafer substrate using deep-reactive ion etching (DRIE). Etched patterns with sidewalls angles controlled with 1 deg precision are reported, while maintaining a surface roughness of better than 20 nm rms for the etched structures. This approach is being developed to build compact 2-D imaging arrays in the THz frequency range.

Silicon micromachining↗
NASA NTRS1994

Generating Submillimeter-Wave Frequencies From Laser Pulses

Semiconductor photoconductive switches generate electrical pulses containing submillimeter-wavelength carrier signals (frequency between 300 and 3,000 GHz) and harmonics thereof when illuminated with short-rise-time pulses from lasers. Device of this type used as local oscilator in heterodyne submillimeter-wave receiver. Electrical output of device coupled via transmission line, waveguide, or antenna to mixer circuitry of receiver. Phase delays between optically activated semiconductor switches determine output carrier frequencies. N electrical pulses generated by each laser pulse. Thus, fundamental output frequency is N times laser-pulse-repetition rate.

Spencer, Michael G.↗
NASA NTRS2012

Cryogenic Amplifier Based Receivers at Submillimeter Wavelengths

The operating frequency of InP high electron mobility transistor (HEMT) based amplifiers has moved well in the submillimeter-wave frequencies over the last couple of years. Working amplifiers with usable gain in waveguide packages has been reported beyond 700 GHz. When cooled cryogenically, they have shown substantial improvement in their noise temperature. This has opened up the real possibility of cryogenic amplifier based heterodyne receivers at submillimeter wavelengths for ground-based, air-borne, and space-based instruments for astrophysics, planetary, and Earth science applications. This paper provides an overview of the science applications at submillimeter wavelengths that will benefit from this technology. It also describes the current state of the InP HEMT based cryogenic amplifier receivers at submillimeter wavelengths.

cryogenically cooled superconductorinsulator- supe↗
NASA NTRS1995

Micromachined Silicon Waveguide Circuits

Rectangular waveguides are commonly used as circuit elements in remote-sensing heterodyne receivers at millimeter wavelengths. The advantages of waveguides are low loss and mechanical tunability. However, conventional machining techniques for waveguide components operating above a few hundred GHz are complicated and costly. Waveguides micromachined from silicon however would have several important advantages including low-cost; small size for very high frequency (submillimeter wave) operation; high dimensional accuracy (important for high-Q circuits); atomically smooth walls, thereby reducing rf losses; and the ability to integrate active and passive devices directly in the waveguide on thin membranes, thereby solving the traditional problem of mounting thin substrates.

Silicon Waveguide↗
NASA NTRS1995

Fabrication and Performance of Planar Schottky Diodes with T-gate-like Anodes in 200 GHz Subharmonically-Pumped Waveguide Mixers

A T-gate-like structure has been developed, fabricated and tested as the anode for millimeter and submillimeter-wave Schottky diodes. The low parasitics of the T-anode diodes yield extremely high cutoff frequencies, making the diodes useable at frequencies well beyond 1 THz. The diodes were tested as an antiparallel-pair, integrated monolithically with microstrip circuitry on a quartz substrate, in a subharmonically pumped waveguide mixer. A double sideband noise temperature of 600 K with a conversion loss of 4.7 dB were measured at 200 GHz. This is believed to be the lowest noise temperature ever reported for a room temperature subharmonically-pumped Schottky diode mixer at this frequency.

Planar↗
NASA NTRS2011

Dielectric Covered Planar Antennas at Submillimeter Wavelengths for Terahertz Imaging

Most optical systems require antennas with directive patterns. This means that the physical area of the antenna will be large in terms of the wavelength. When non-cooled systems are used, the losses of microstrip or coplanar waveguide lines impede the use of standard patch or slot antennas for a large number of elements in a phased array format. Traditionally, this problem has been solved by using silicon lenses. However, if an array of such highly directive antennas is to be used for imaging applications, the fabrication of many closely spaced lenses becomes a problem. Moreover, planar antennas are usually fed by microstrip or coplanar waveguides while the mixer or the detector elements (usually Schottky diodes) are coupled in a waveguide environment. The coupling between the antenna and the detector/ mixer can be a fabrication challenge in an imaging array at submillimeter wavelengths. Antennas excited by a waveguide (TE10) mode makes use of dielectric superlayers to increase the directivity. These antennas create a kind of Fabry- Perot cavity between the ground plane and the first layer of dielectric. In reality, the antenna operates as a leaky wave mode where a leaky wave pole propagates along the cavity while it radiates. Thanks to this pole, the directivity of a small antenna is considerably enhanced. The antenna consists of a waveguide feed, which can be coupled to a mixer or detector such as a Schottky diode via a standard probe design. The waveguide is loaded with a double-slot iris to perform an impedance match and to suppress undesired modes that can propagate on the cavity. On top of the slot there is an air cavity and on top, a small portion of a hemispherical lens. The fractional bandwidth of such antennas is around 10 percent, which is good enough for heterodyne imaging applications.The new geometry makes use of a silicon lens instead of dielectric quarter wavelength substrates. This design presents several advantages when used in the submillimeter-wave and terahertz bands: a) Antenna fabrication compatible with lithographic techniques. b) Much simpler fabrication of the lens. c) A simple quarter-wavelength matching layer of the lens will be more efficient if a smaller portion of the lens is used. d) The directivity is given by the lens diameter instead of the leaky pole (the bandwidth will not depend anymore on the directivity but just on the initial cavity). The feed is a standard waveguide, which is compatible with proven Schottky diode mixer/detector technologies. The development of such technology will benefit applications where submillimeter- wave heterodyne array designs are required. The main fields are national security, planetary exploration, and biomedicine. For national security, wideband submillimeter radars could be an effective tool for the standoff detection of hidden weapons or bombs concealed by clothing or packaging. In the field of planetary exploration, wideband submillimeter radars can be used as a spectrometer to detect trace concentrations of chemicals in atmospheres that are too cold to rely on thermal imaging techniques. In biomedicine, an imaging heterodyne system could be helpful in detecting skin diseases.

Chattopadhyay, Goutam↗
NASA NTRS1993

A 200 GHz tripler using a single barrier varactor

The GaAs Schottky varactor diode is the nonlinear device most commonly used for submillimeter wave harmonic generation. Output power adequate to serve as a local oscillator source for SIS tunnel junctions has been demonstrated with whisker-contacted GaAs Schottky varactor multipliers in waveguide mounts up to about 800 GHz. In this paper, we present results for a tripler to 200 GHz using a new multiplier device, the single barrier varactor (SBV). This new varactor has potential advantages such as stronger nonlinearities or special symmetry, which make it attractive for submillimeter wave frequency multiplication. The performance of a tripler using a SBV over a output frequency range from 186 to 207 GHz has been measured in a crossed waveguide mount. The theoretical performance of the device has been calculated using large signal analysis. A comparison of theoretical and measured results and a discussion of various losses in the mount and the varactor have also been presented.

Choudhury, Debabani↗
NASA NTRS1992

A 200 GHz tripler using single barrier varactor

The GaAs Schottky varactor diode is the nonlinear device most commonly used for submillimeter wave harmonic generation. Output power adequate to serve as a local oscillator source for SIS tunnel junctions has been demonstrated with whisker-contacted GaAs Schottky varactor multipliers in waveguide mounts up to about 800 GHz. In this paper, we present results for a tripler to 200 GHz using a new multiplier device, the single barrier varactor (SBV). This new varactor has a potential advantages such as stronger nonlinearities or special symmetry, which make it attractive for submillimeter wave frequency multiplication. The performance of a tripler using a SBV over a output frequency range from 186 to 207 GHz has been measured in a crossed waveguide mount. The theoretical performance of the device has been calculated using large signal analysis. A comparison of theoretical and measured results and a discussion of various losses in the mount and the varactor have also been presented.

Choudhury, Debabani↗
NASA NTRS1991

Making High-Pass Filters For Submillimeter Waves

Micromachining-and-electroforming process makes rigid metal meshes with cells ranging in size from 0.002 in. to 0.05 in. square. Series of steps involving cutting, grinding, vapor deposition, and electroforming creates self-supporting, electrically thick mesh. Width of holes typically 1.2 times cutoff wavelength of dominant waveguide mode in hole. To obtain sharp frequency-cutoff characteristic, thickness of mesh made greater than one-half of guide wavelength of mode in hole. Meshes used as high-pass filters (dichroic plates) for submillimeter electromagnetic waves. Process not limited to square silicon wafers. Round wafers also used, with slightly more complication in grinding periphery. Grid in any pattern produced in electroforming mandrel. Any platable metal or alloy used for mesh.

Siegel, Peter H.↗
NASA NTRS1984

Dielectric based submillimeter backward wave oscillator circuit

A ladder circuit especially useful in backward wave oscillators operating in the 500 GHz to 2000 GHz range has a waveguide with transversely orientated slabs which contact an upper wall of the waveguide. The edges of the slabs adjacent to the physical center of waveguide are curved segments and stubs of electrically conductive, nonmagnetic material. The ends of slabs include metal layers at opposite ends to provide a conductive leakage path. A ridge bar is attached to the inside of the bottom wall of the waveguide and includes a concave upper surface which partially straddles the electron beam. The novelty of the invention lies in the ladder structure compared of thin, vapor deposited rungs supported on the edge of diamond slabs; each rung having a curved segment which straddles the electron beam together with a ridge bar which also straddles the electron beam.

Kosmahl, H. G.↗
NASA NTRS1995

Millimeter And Submillimeter-Wave Integrated Circuits On Quartz

Proposed Quartz substrate Upside-down Integrated Device (QUID) relies on UV-curable adhesive to bond semiconductor with quartz. Integrated circuits including planar GaAs Schottky diodes and passive circuit elements (such as bandpass filters) fabricated on quartz substrates. Circuits designed to operate as mixers in waveguide circuit at millimeter and submillimeter wavelengths. Integrated circuits mechanically more robust, larger, and easier to handle than planar Schottky diode chips. Quartz substrate more suitable for waveguide circuits than GaAs substrate.

Mehdi, Imran↗
NASA NTRS2014

Challenges and Techniques in Measurements of Noise, Cryogenic Noise and Power in Millimeter-Wave and Submillimeter-Wave Amplifiers

We will present the topic of noise measurements, including cryogenic noise measurements, of Monolithic Microwave Integrated Circuit (MMIC) and Sub-Millimeter-Wave Monolithic Microwave Integrated Circuit (S-MMIC) amplifiers, both on-wafer, and interfaced to waveguide modules via coupling probes. We will also present an overview of the state-of-the-art in waveguide probe techniques for packaging amplifier chips, and discuss methods to obtain the lowest loss packaging techniques available to date. Linearity in noise measurements will be discussed, and experimental methods for room temperature and cryogenic noise measurements will be presented. We will also present a discussion of power amplifier measurements for millimeter-wave and submillimeter-wave amplifiers, and the tools and hardware needed for this characterization.

Samoska, Lorene↗
NASA NTRS1996

Thin-Ribbon Tapered Couplers For Dielectric Waveguides

Thin-ribbon tapered couplers proposed for launching electro-magnetic waves into dielectric waveguides, which include optical fibers. Intended for use with ribbon dielectric waveguides designed for operation at millimeter or submillimeter wavelengths, made of high-relative-permittivity, low-loss materials and thicknesses comparable to or less than free-space design wavelengths. Coupling efficiencies exceeds those of older tapered couplers.

Otoshi, Tom Y.↗