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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

A variable-geometry combustor used to study primary and secondary zone stoichiometry

A combustion program is underway to evaluate fuel quality effects on gas turbine combustors. A rich-lean variable geometry combustor design was chosen to evaluate fuel quality effects over a wide range of primary and secondary zone equivalence ratios at simulated engine operating conditions. The first task of this effort, was to evaluate the performance of the variable geometry combustor. The combustor incorporates three stations of variable geometry to control primary and secondary zone equivalence ratio and overall pressure loss. Geometry changes could be made while a test was in progress through the use of remote control actuators. The primary zone liner was water cooled to eliminate the concern of liner durability. Emissions and performance data were obtained at simulated engine conditions of 80 percent and full power. Inlet air temperature varied from 611 to 665K, inlet total pressure varied from 1.02 to 1.24 MPa, reference velocity was a constant 1400 K.

Briehl, D.↗
NASA NTRS1988

Electron Diffraction Evidence for the Ordering of Excess Nickel Atoms by Relation to Stoichiometry in Nickel-Rich Beta'-Nial Formation of a Nickel-Aluminum (Ni2al) Superlattices

In electron diffraction patterns of nickel-rich beta-NiAl alloys, many anomalies are observed. One of these is the appearance of diffuse intensity maxima between the reflexions of the B2 structure. This is explained by the short-range ordering of the excess nickel atoms on the simple cubic sublattice occupied only by aluminum atoms in the stoichiometric, perfectly ordered NiAl alloy. After annealing Ni 37.5 atomic percent Al and Ni 37.75 atomic percent Al for 1 week at 300 and 400 C, the diffuse intensity maxima transformed into sharp superstructure reflexions. These reflexions are explained by the formation of the four possible variants of an ordered hexagonal superstructure corresponding to the Ni2Al composition. This structure is closely related to the Ni2Al3 structure (same space group) formed by the ordering of vacancies on the nickel sublattice in aluminum-rich beta-NiAl alloys.

Reynaud, F.↗
NASA NTRS1987

Rapidly solidified nickel aluminide of improved stoichiometry and ductilization

It has been found that tri-nickel aluminide compositions are quite sensitive to the ratio of nickel to aluminum in their ability to receive boron as a dopant and that compositions which are relatively poor in the aluminum component can be doped more effectively with boron. Further, it has been found for the nickel aluminides which have lower concentrations of aluminum that the percentage of boron which can be added to the composition to effectively increase the strength of the alloys is . favored by the lower aluminum ratio so that higher concentrations of boron are addable. The compositions which result have significant strength properties based on tensile tests of the compositions.

Alan I Taub↗
NASA NTRS1995

The control of purity and stoichiometry of compound semiconductors by high vapor pressure transport

In this report we summarize the results of a three year research program on high pressure vapor transport (HPVT) of compound semiconductors. Most of our work focused onto pnictides, in particular ZnGeP2, as a model system. Access to single crystals of well controlled composition of this material is desired for advancing the understanding and control of its point defect chemistry in the contest of remote, real-time sensing of trace impurities, e.g., greenhouse gases, in the atmosphere by ZnGeP2 optical parametric oscillators (OPO's).

Bachmann, Klaus J.↗
NASA NTRS1993

Electron Mobility Studies of Device Quality InAs/GaAs Short Period Supprlattices Grown by Dynamic Stoichiometry Control and Floating In Flash-off Methods

The Strained Layer InGaAs/GaAs system has been the subject of substantial work emphasizing both growth studies and device applications. Relatively few studies have successfully explored the binary InAs on GaAs system because of the difficulties of maintaining a specular growth front and the apparently small value of the critical thickness.

Electron Mobility↗
NASA NTRS2022

Atomic-Scale Structure and Non-Stoichiometry of Meteoritic Hibonite: A Transmission Electron Microscope Study

Hibonite (CaAl_12O_19) is a common refractory mineral in Ca-Al-rich inclusions (CAIs) in primitive meteorites. Transmission electron microscope (TEM) studies have identified enigmatic planar defects in different occurrences of hibonite in the Allende meteorite that give rise to strong streaking along c* in electron diffraction patterns. Atomic resolution high-angle annular dark-field (HAADF) imaging and energy-dispersive X-ray (EDX) analyses were used to determine the nature and origin of these planar features. HAADF images of hibonite grains reveal lamellar intergrowths of common 1.6 nm spacing, and less commonly 2.0 and 2.5 nm spacings, interspersed in stoichiometric hibonite showing 1.1 nm (002) spacing. Stoichiometric hibonite consists of alternating Ca-containing (“R”) and spinel-structured (“S”) blocks stacked in a sequence RS. In contrast, the 1.6 nm layers result from a doubled S block such that the stacking sequence is RSS, while in the widest defect observed, the stacking sequence is RSSSS. These intergrowths are epitaxial and have coherent, low-strain boundaries with the host hibonite Meteoritic hibonite shows common Ti and Mg substitution for Al in its structure. Atomic-resolution EDX maps of hibonite grains in the Allende CAI confirm the preferred site occupancy of Mg on tetragonal M3 sites in S blocks and of Ti on trigonal bipyramidal M2 and octahedral M4 sites in R blocks. Mg is highly concentrated, but Ti is absent in the planar defects where wider S blocks show Al-rich compositions compared to stoichiometric MgAl_2O_4 spinel. Therefore, Mg likely played the major role in the formation and metastability of planar defects in hibonite. Electron energy loss spectroscopy data from the Ti L_2,3 edge show the presence of mixed Ti oxidation states with ~ 15–20% of Ti as Ti^(3+) in hibonite, suggesting a direct substitution of Ti^(3+) ↔ Al^(3+) in hibonite. The remaining ~ 80–85% of Ti is present as Ti^(4+) and corresponding EDX analyses are consistent with the well-known coupled substitution 2Al^(3+) ↔ Ti^(4+) + Mg^(2+) being the major mechanism for Ti and Mg substitution in hibonite. The formation of planar defects in hibonite occurred during high-temperature nebular condensation or melting/crystallization processes. The occurrence of non-stoichiometric hibonite in the Allende CAI deviates from the mineral formation sequence predicted from equilibrium condensation models. Overall, our atomic resolution TEM observations signify non-equilibrium, kinetic-controlled crystal growth during the high-temperature formation of refractory solids in the early solar nebula.

hibonite↗
NASA NTRSDate not supplied

Cryogenic Extension of NASA Species Polynomials Using Hydrogen and Oxygen at Stoichiometry

NASA has been conducting research in Rotating Detonation Rocket Engines (RDREs) for several years. A recent test at the Marshall Spaceflight Center has successfully shown operation of a RDRE that ran for 251 seconds which had combustion chamber cryogenic inlet conditions [1]. However, an overall pressure gain was not observed in the performance of the engine. Such an indication could mean an optimal chamber design is yet to be discovered. Such a design could significantly reduce parasitic pressure loses and improve overall engine efficiency beyond that of conventional rockets. To investigate different chamber configurations, new CFD capability is needed to accurately capture cryogenic thermophysical and transport property data. Such an effort is currently part of NASA’s Early Career Initiative (ECI) program. This paper focuses on the thermophysical property mixture model approach that makes use of NASA’s polynomial fits of species and another cryogenic model chosen from NIST’s Refprop program. Presented in this paper are results of a 1D denotation CFD simulation of stoichiometric Hydrogen and Oxygen mixture at a cryogenic upstream condition.

Combustion↗
NASA NTRS2005

Characterization of Ternary NiTiPt High-Temperature Shape Memory Alloys

Pt additions substituted for Ni in NiTi alloys are known to increase the transformation temperature of the alloy but only at fairly high Pt levels. However, until now only ternary compositions with a very specific stoichiometry, Ni50-xPtxTi50, have been investigated and then only to very limited extent. In order to learn about this potential high-temperature shape memory alloy system, a series of over twenty alloys along and on either side of a line of constant stoichiometry between NiTi and TiPt were arc melted, homogenized, and characterized in terms of their microstructure, transformation temperatures, and hardness. The resulting microstructures were examined by scanning electron microscopy and the phase compositions quantified by energy dispersive spectroscopy."Stoichiometric" compositions along a line of constant stoichiometry between NiTi to TiPt were essentially single phase but by any deviations from a stoichiometry of (Ni,Pt)50Ti50 resulted in the presence of at least two different intermetallic phases, depending on the overall composition of the alloy. Essentially all alloys, whether single or two-phase, still under went a martensitic transformation. It was found that the transformation temperatures were depressed with initial Pt additions but at levels greater than 10 at.% the transformation temperature increased linearly with Pt content. Also, the transformation temperatures were relatively insensitive to alloy stoichiometry within the range of alloys examined. Finally, the dependence of hardness on Pt content for a series of Ni50-xPtxTi50 alloys showed solution softening at low Pt levels, while hardening was observed in ternary alloys containing more than about 10 at.% Pt. On either side of these "stoichiometric" compositions, hardness was also found to increase significantly.

Rios, Orlando↗
NASA NTRS1985

Nonstoichiometric defects in GaAs and the EL2 bandwagon

In the present paper, an attempt is made to formulate a common framework for a discussion of nonstoichiometric defects, especially EL2 and dislocations. An outline is provided of the most important settled and unsettled issues, taking into account not only fundamental interests, but also urgent needs in advancing IC technology. Attention is given to stoichiometry-controlled compensation, the expected role of melt stoichiometry in electrical conductivity for the basic atomic disorders, defect equilibria-dislocations and EL2, and current issues pertaining to the identification of EL2. It is concluded that nonstoichiometric defects play a critical role in the electronic properties of GaAs and its electronic applications. Very significant progress has been recently made in learning how to adjust melt stoichiometry in order to maximize its beneficial effects and minimize its detrimental ones.

Lagowski, J.↗
NASA NTRS1984

Crystal growth of GaAs in space

It is shown that stoichiometry variations in the GaAs melt during growth constitute the most critical parameter regarding defect formations and their interactions; this defect structure determines all relevant characteristics of GaAs. Convection in the melt leads to stoichiometric variations. Growth in axial magnetic fields reduces convection and permits the study of defect structure. In order to control stoichiometry in space and to accommodate expansion during solidification, a partially confined configuration was developed. A triangular prism is employed to contain the growth melt. This configuration permits the presence of the desired vapor phase in contact with the melt for controlling the melt stoichiometry.

Gatos, H. C.↗
NASA NTRS1990

Influence of the deposition conditions on radiofrequency magnetron sputtered MoS2 films

By varying the radiofrequency (RF) power, the Ar pressure, and the potential on the substrates, MoS(x) films of various stoichiometry, density, adhesion, and morphology were produced. An increase of RF power increased the deposition rate and density of the MoS2 films as well as improved adhesion. However, the stoichiometry remained constant. An increase of Ar pressure increased the deposition rate but decreased the density, wheras both stoichiometry and adhesion were maximized at around 20 mtorr Ar pressure. Furthermore, a transition from compact film growth to columnar film growth was observed when the pressure was varied from 5 to 15 mtorr. Substoichiometric films were grown when a negative (bias) voltage was applied to the substrates.

Steinmann, Pierre A.↗
NASA NTRS1993

Vickers indentation hardness of stoichiometric and reduced single crystal TiO2 (rutile) from 25 to 800 C

The indentation microhardness of stoichiometric and reduced single crystal rutile (TiO2) from 25 to 800 C is presented in this paper. The results serve two main purposes. One is to assess the effect of rutile's stoichiometry on its hardness. The other is to test recently suggested theory on solid lubrication with sub Stoichiometric rutile in an effort to better understand shear controlled phenomenon. Microhardness was measured using a Vickers diamond indentor on both vacuum and hydrogen reduced single crystal rutile from 25 to 800 C. The results indicate that stoichiometry and temperature have a pronounced effect on rutile's hardness. The measured effects lend support to theory on solid lubrication by enhanced crystallographic slip and suggest that solid lubricant materials may be produced by careful atomic level tailoring (stoichiometry control).

Dellacorte, Christopher↗
NASA NTRS1997

Electrodeposited CuInSe2 Thin Film Junctions

We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.

Raffaelle, R. P.↗
NASA NTRS1998

Electrodeposited CulnSe2 Thin Film Junctions

We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.

Raffaelle, R. P.↗