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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

JOVE NASA-FIT program: Microgravity and aeronomy projects

This semi-annual status report is divided into two sections: Scanning Tunneling Microscopy Lab and Aeronomy Lab. The Scanning Tunneling Microscopy (STM) research involves studying solar cell materials using the STM built at Florida Tech using a portion of our initial Jove equipment funding. One result of the participation in the FSEC project will be to design and build an STM system which is portable. This could serve as a prototype STM system which might be used on the Space Shuttle during a Spacelab mission, or onboard the proposed Space Station. The scanning tunneling microscope is only able to image the surface structure of electrically conductive crystals; by building an atomic force microscope (AFM) the surface structure of any sample, regardless of its conductivity, will be able to be imaged. With regards to the Aeronomy Lab, a total of four different mesospheric oxygen emission codes were created to calculate the intensity along the line of sight of the shuttle observations for 2972A, Herzberg I, Herzberg II, and Chamberlain bands. The thermosphere-ionosphere coupling project was completed with two major accomplishments: collection of 500 data points on modulation of neutral wind with geophysical variables, and establishment of constraints on behavior of the height of the ionosphere as a result of interaction between geophysical and geometrical factors. The magnetotail plasma project has been centered around familiarization with the subject in the form of a literature search and preprocessing of IMP-8 data.

Patterson, James D.↗
NASA NTRS2019

An Initial Analysis of Automating Conjunction Assessment and Collision Avoidance Planning in Space Traffic Management

We introduce a framework that automates the process of assessing potential satellite conjunctions in space, and generating collision avoidance maneuvers to support mitigation efforts within a novel space traffic management (STM) architecture. A software implementation of the framework was developed in a MATLAB-STK integrated environment, however, the concept and framework is agnostic to the language or environment. The software pulls from existing catalogs of spaceborne objects and ingests user-defined parameters to produce conjunction data, which could potentially aid collision avoidance planning in the STM architecture. The utility of the software in maneuver planning and exploring a performance-based tradespace of actions is demonstrated using three example cases: one-to-one conjunction, one-versus-four conjunctions, and a near head-on collision. The framework also provides a test-bed for the use of application programming interfaces (APIs) to demonstrate machine-to-machine communication between entities in our proposed STM architecture. Results from this software implementation are expected to aid distributed decision-making among various stakeholders, and inform efficient, autonomous, structured but flexible concept of operations within STM.

Space Systems Engineering↗
NASA NTRS2018

A Concept for Civil Space Traffic Management

As technology has improved, operators have sought to use cubesats, as well as smallsats more generally, to perform increasingly more ambitious and sophisticated functions. Despite this, practical concerns associated with cubesat infant mortality, conjunctions, limited maneuverability, and debris generation have been relatively muted because most cubesats have been launched to lower orbits that limit both their orbital lifetime and consequences should a collision occur. NASA ARC has developed a concept for a highly-automated and distributed space traffic management (STM) architecture, drawing on similar work done to provide traffic management for small unmanned aerial systems (UAS) operating at low altitudes. The system proposes a strategy to accommodate growing space traffic volume safely, as well as pave the way for a transition of civil STM authority to a civilian governmental entity. The architecture envisions an open-access software platform architecture of data and service suppliers, consumers, and regulators, connected via a set of application programming interfaces (APIs). The platform would build on, rather than replicate existing integration and coordination efforts within the space situational awareness ecosystem, using existing standards for data message formats from organizations like the Consultative Committee for Space Data Systems and wrapping, rather than replacing existing integrations. We will present an initial STM architecture in this presentation, with a few examples showing how stakeholders can interact structurally, but flexibly, within this architecture.

Space Situational Awareness↗
NASA NTRS1988

Scanning Tunneling Microscopy methods for spectroscopic imaging of subsurface interfaces

A new method for spatially-resolved, spectroscopic investigation of subsurface interface structure has been developed. The method, Ballistic Electron Emission Microscopy (BEEM), is based on Scanning Tunneling Microscopy (STM) techniques. BEEM combines STM vacuum tunneling with unique ballistic electron spectroscopy capabilities. BEEM enables, for the first time, direct imaging of subsurface interface electronic properties with nanometer spatial resolution. STM topographic images of surface structure and BEEM images of subsurface properties are obtained simultaneously. BEEM capabilities are demonstrated by investigation of important metal-semiconductor interfaces.

Bell, L. D.↗
NASA NTRS1993

Scanning Tunneling Microscopy analysis of space-exposed polymer films

The characterization of the surface of selected space-exposed polymer films by Scanning Tunneling Microscopy (STM) is reported. Principles of STM, an emerging new technique for materials analysis, are reviewed. The analysis of several films which received up to 5.8 years of low Earth orbital (LEO) exposure onboard the NASA Long Duration Exposure Facility (LDEF) is discussed. Specimens included FEP Teflon thermal blanket material, Kapton film, and several experimental polymer films. Ultraviolet and atomic oxygen-induced crazing and erosion are described. The intent of this paper is to demonstrate how STM is enhancing the understanding of LEO space environmental effects on polymer films.

Kalil, Carol R.↗
NASA NTRS1999

Computational Study of Field Initiated Surface Reactions for Synthesis of Diamond and Silicon

This project involves using quantum chemistry to simulate surface chemical reactions in the presence of an electric field for nanofabrication of diamond and silicon. A field delivered by a scanning tunneling microscope (STM) to a nanometer scale region of a surface affects chemical reaction potential energy surfaces (PES) to direct atomic scale surface modification to fabricate sub-nanometer structures. Our original hypothesis is that the applied voltage polarizes the charge distribution of the valence electrons and that these distorted molecular orbitals can be manipulated with the STM so as to change the relative stabilities of the electronic configurations over the reaction coordinates and thus the topology of the PES and reaction kinetics. Our objective is to investigate the effect of applied bias on surface reactions and the extent to which STM delivered fields can be used to direct surface chemical reactions on an atomic scale on diamond and silicon. To analyze the fundamentals of field induced chemistry and to investigate the application of this technique for the fabrication of nanostructures, we have employed methods capable of accurately describing molecular electronic structure. The methods we employ are density functional theory (DFT) quantum chemical (QC) methods. To determine the effect of applied bias on surface reactions we have calculated the QC PESs in various applied external fields for various reaction steps for depositing or etching diamond and silicon. We have chosen reactions which are thought to play a role in etching and the chemical vapor deposition growth of Si and diamond. The PESs of the elementary reaction steps involved are then calculated under the applied fields, which we vary in magnitude and configuration. We pay special attention to the change in the reaction barriers, and transition state locations, and search for low energy reaction channels which were inaccessible without the applied bias.

Musgrave, Charles Bruce↗
NASA NTRS2001

Transport Modeling for Metallic Electrode: Semiconducting Nanotube Systems

Recently, current-voltage (I-V) characteristics have been reported by Collins et al. for a system with a scanning tunneling microscope (STM) tip and a carbon nanotube. The STM tip was driven forward into a film of many entangled nanotubes on a substrate, and then was retracted, so that one of nanotubes bridged the STM and the film. I-V characteristics had two different patterns for different heights. One showed large dI/ dV with V greater than 0, small dI/dV with V less than 0, and I = 0 near V = 0 (type-I), while the other showed rectification, i.e., I does not equal 0 only with V less than 0 (type-II), with the tip grounded. We propose a physical mechanism to explain the observed I-V patterns. We consider that the observed characteristics strongly reflected the nature of the tip (metal) - nanotube (semiconductor) contact. The other end of the nanotube was entangled well in the film, and simply provided a good Ohmic contact. We will argue that there are two different contact modes: vacuum gap and touching modes, depending on the presence or absence of a tiny vacuum gap d approx. 0.1 - 0.2 nm at the junction. These modes may be related to physisorption and chemisorption, respectively. Once admitting their existence, it is naturally shown that I-V characteristics are type-I in the vacuum gap mode, and type-II in the touching mode. We argue that the nanotube had to be an n-type semiconductor judging from the I-V characteristics, contrary to often observed p-type in the transistor applications, where p-type is probably due to the oxidation in air or the trapped charges in the silicon dioxide. Additional information is contained in the original extended abstract.

Yamada, Toshishige↗
NASA NTRS2013

ESD Test Apparatus for Soldering Irons

ESDA (Electrostatic Discharge Association) ESD STM 13.1-2000 requires frequent testing of the voltage leakage from the tip of a soldering iron and the resistance from the tip of the soldering iron to the common point ground. Without this test apparatus, the process is time-consuming and requires several wires, alligator clips, or test probes, as well as additional equipment. Soldering iron tips must be tested for electrostatic discharge risks frequently, and this typically takes a lot of time in setup and testing. This device enables the operator to execute the full test in one minute or less. This innovation is a simple apparatus that plugs into a digital multimeter (DMM) and the Common Point Ground (CPG) reference. It enables the user to perform two of the electrostatic discharge tests required in ESD STM 13.1-2000. The device consists of a small black box with two prongs sticking out of one end, two inputs on the opposite end (one of the inputs is used to connect the reference CPG to the DMM), and a metal tab on one side. Inside the box are wires, several washers of various materials, and assembly hardware (nuts and screws/bolts). The device is a passive electronic component that is plugged into a DMM. The operator sets the DMM to read voltage. The operator places the heated tip of the soldering iron onto the metal tab with a small amount of solder to ensure a complete connection. The voltage is read and recorded. The operator switches the DMM to read resistance. The operator places the heated tip of the soldering iron onto the metal tab with a small amount of solder to ensure a complete connection. The resistance is recorded. If the recorded voltage and resistance are below a number stated in ESDA ESD STM 13.1-2000, the test is considered to pass. The device includes all the necessary wiring internal to its body so the operator does not need to do any independent wiring, except for grounding. It uses a stack of high-thermal-resistance washers to minimize the heat transfer from the soldering iron to the wiring used to measure the resistance and voltages. This minimizes thermal error. The device allows very rapid execution of a test that is performed frequently.

Sancho, Jose↗
NASA NTRS2015

Numerical Computation of a Continuous-thrust State Transition Matrix Incorporating Accurate Hardware and Ephemeris Models

A significant body of work exists showing that providing a nonlinear programming (NLP) solver with expressions for the problem constraint gradient substantially increases the speed of program execution and can also improve the robustness of convergence, especially for local optimizers. Calculation of these derivatives is often accomplished through the computation of spacecraft's state transition matrix (STM). If the two-body gravitational model is employed as is often done in the context of preliminary design, closed form expressions for these derivatives may be provided. If a high fidelity dynamics model, that might include perturbing forces such as the gravitational effect from multiple third bodies and solar radiation pressure is used then these STM's must be computed numerically. We present a method for the power hardward model and a full ephemeris model. An adaptive-step embedded eight order Dormand-Prince numerical integrator is discussed and a method for the computation of the time of flight derivatives in this framework is presented. The use of these numerically calculated derivatieves offer a substantial improvement over finite differencing in the context of a global optimizer. Specifically the inclusion of these STM's into the low thrust missiondesign tool chain in use at NASA Goddard Spaceflight Center allows for an increased preliminary mission design cadence.

Low Thrust↗
NASA NTRSDate not supplied

A Numerical Method for Computing the State Transition Matrix Using Poincare Integral Invariants

The Poincare integral invariants describe the volumes of sets in Hamiltonian phase space. We use these invariants to derive a new numerical procedure for obtaining the state transition matrix (STM), which can be applied to both conservative and nonconservative systems. The method is analogous to a finite difference approximation of the STM, where perturbed states are numerically propagated along with the reference trajectory. We discuss the mathematical similarities between this new STM and existing methods, show numerical results for orbital motion and uncertainty propagation, and discuss new insights afforded by the Hamiltonian properties of phase flow.

state transition matrix↗
NASA NTRS1987

Energy-gap spectroscopy of superconductors using a tunneling microscope

A unique scanning tunneling microscope (STM) system has been developed for spectroscopy of the superconducting energy gap. High-resolution control of tunnel current and voltage allows for measurement of superconducting properties at tunnel resistance levels 100-1000 greater than that achieved in prior work. The previously used STM methods for superconductor spectroscopy are compared to those developed for the work reported here. Superconducting energy-gap spectra are reported for three superconductors, Pb, PbBi, and NbN, over a range of tunnel resistance. The measured spectra are compared directly to theory.

Le Duc, H. G.↗
NASA NTRS1988

Direct control and characterization of a Schottky barrier by scanning tunneling microscopy

Scanning tunneling microscopy (STM) methods are used to directly control the barrier height of a metal tunnel tip-semiconductor tunnel junction. Barrier behavior is measured by tunnel current-voltage spectroscopy and compared to theory. A unique surface preparation method is used to prepare a low surface state density Si surface. Control of band bending with this method enables STM investigation of semiconductor subsurface properties.

Bell, L. D.↗
NASA NTRS1988

Imaging graphite in air by scanning tunneling microscopy - Role of the tip

Atomically resolved images of highly oriented pyrolytic graphite (HOPG) in air at point contact have been obtained. Direct contact between tip and sample or contact through a contamination layer provides a conduction mechanism in addition to the exponential tunneling mechanism responsible for scanning tunneling microscopy (STM) imaging. Current-voltage (I-V) spectra were obtained while scanning in the current imaging mode with the feedback circuit interrupted in order to study the graphite imaging mechanism. Multiple tunneling tips are probably responsible for images without the expected hexagonal or trigonal symmetry. The observations indicate that the use of HOPG for testing and calibration of STM instrumentation may be misleading.

Colton, R. J.↗
NASA NTRS1988

The solar simulation test of the ITALSAT thermal structural model

The ITALSAT structural/thermal model (STM) was submitted to a solar simulation test in order to verify the spacecraft thermal design and the thermal mathematical model which will be used to predict the on orbit temperatures. The STM was representative of the flight model in terms of configuration, structures, appendages and thermal hardware; dissipating dummy units were used to simulate the electronic units. The test consisted of the main phases: on station (beginning of life), on station (end of life), and transfer orbit. Preliminary results indicate that the test performances were satisfactory. The spacecraft measured temperatures were up to 15 degrees higher than the predicted ones. This imposes a careful correlation analysis in order to have reliable flight temperature predictions.

Giommi, M.↗
NASA NTRS1989

Superconducting phonon spectroscopy using a low-temperature scanning tunneling microscope

The low-temperature scanning tunneling microscope (STM) system described by LeDuc et al. (1987) was used to observe the phonon density of states effects in a superconductor. Using techniques based on those employed in macroscopic tunneling spectroscopy, electron tunneling current-voltage (I-V) spectra were measured for NbN and Pb, and dI/dV vs V spectra were measured using standard analog derivative techniques. I-V measurements on NbN and Pb samples under typical STM conditions showed no evidence for multiparticle tunneling effects.

Leduc, H. G.↗
NASA NTRS1993

Imaging Genetic Molecules At Atomic Resolution

Proposed method of imaging informational polymeric biological molecules at atomic resolution enables determination of sequences of component monomers about 10 to the 3rd power to 10 to the 4th power times as fast as conventional methods do. Accelerates research on genetic structures of animals and plants. Also contributes significantly to imaging processes like scanning electron microscopy (SEM), atomic-force microscopy (AFM), and scanning tunneling microscopy (STM) in cases in which necessary to locate or identify small specimens on relatively large backgrounds and subtract background images to obtain images of specimens in isolation. V-grooves on silicon wafer laid out in square pattern, intersections of which marked to identify coordinates. Specimen molecules held in grooves for reproducible positioning and scanning by AFM or STM.

Coles, L. Stephen↗
NASA NTRS1992

Initial value and two point boundary value solutions to the Clohessy-Wiltshire equations

The nonhomogeneous Clohessy-Wiltshire (C-W) equations are formulated and solved as an initial value problem in the form structure of linear systems theory. The state transition matrix (STM) and its inverse are obtained explicitly in both Newtonian and Hamiltonian form. It is shown that the STM for the C-2 equations possesses a special property making its inverse easily obtainable. Since solutions to the C-W equations are needed in two-point boundary value form to construct a good mission design tool for orbit transfer, the Lambert problem is solved in the context of the C-W equations.

Mullins, Larry D.↗
NASA NTRS1993

Atomic probe microscopy of 3C SiC films grown on 6H SiC substrates

The surface of 3C SiC films grown on 6H SiC substrates has been studied by atomic probe microscopy in air. Atomic-scale images of the 3C SiC surface have been obtained by STM which confirm the 111 line type orientation of the cubic 3C layer grown on the 0001 plane type surface of the hexagonal 6H substrate. The nearest-neighbor atomic spacing for the 3C layer has been measured to be 3.29 +/- 0.2 A, which is within 7 percent of the bulk value. Shallow terraces in the 3C layer have been observed by STM to separate regions of very smooth growth in the vicinity of the 3C nucleation point from considerably rougher 3C surface regions. These terraces are oriented at right angles to the growth direction. Atomic force microscopy has been used to study etch pits present on the 6H substrate due to high temperature HCl cleaning prior to CVD growth of the 3C layer. The etch pits have hexagonal symmetry and vary in depth from 50 nm to 1 micron.

Steckl, A. J.↗