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NASA NTRS2021

Utilizing local phase transformation strengthening for nickel-based superalloys

Almost 75 years of research has been devoted to producing superalloys capable of higher operating temperatures in jet turbine engines, and there is an ongoing need to increase operating temperature further. Here, a new disk Nickel-base superalloy is designed to take advantage of strengthening atomic-scale dynamic complexions. This local phase transformation strengthening provides the alloy with a three times improvement in creep strength over similar disk superalloys and comparable strength to a single crystal blade alloy at 760 °C. Ultra-high-resolution chemical mapping reveals that the improvement in creep strength is a result of atomic-scale η (D024) and χ (D019) formation along superlattice stacking faults. To understand these results, the energy differences between the L12 and competing D024 and D019 stacking fault structures and their dependence on composition are computed by density functional theory. This study can help guide researchers to further optimize local phase transformation strengthening mechanisms for alloy development.

Timothy M. Smith↗

NASA NTRSDate not supplied

Twin nucleation and growth mechanism in Ni-based superalloys

While micro-twinning is the dominant creep deformation mechanism in Ni-based superalloys at temperatures above 700 C, many aspects of twin nucleation and growth remain unexplored. Kolbe mechanism for micro-twinning, based on thermally activated reordering, is probably the only concept currently widely accepted by the scientific community. We propose a qualitatively different mechanism for nucleation and growth of twins. The mechanism can be briefly described as follows. Penetration of a gamma prime precipitate by two 1/2(110) edge dislocations travelling on adjacent {111} glide planes triggers nucleation (at the interface of the precipitate and the matrix) and emission of Shockley partial of screw character on the glide plane of the edge dislocation, which entered the precipitate first (generating trailing high-energy anti-phase boundary (APB)). Propagation of this Shockley partial into the precipitate converts the APB into super intrinsic stacking fault (SISF). The recurring arrival of additional edge dislocations on the glide planes adjacent to the configuration described above leads to formation of super extrinsic stacking fault SESF, subsequent micro-twin formation, and growth of the twinned region. We demonstrate the proposed mechanism via molecular dynamics simulations.

Ni-superalloys↗

NASA NTRSDate not supplied

Twin nucleation and growth mechanism in Ni-based superalloys

While micro-twinning is the dominant creep deformation mechanism in Ni-based superalloys at temperatures above 700 C, many aspects of twin nucleation and growth remain unexplored. Kolbe mechanism for micro-twinning, based on thermally activated reordering, is probably the only concept currently widely accepted by the scientific community. We propose a qualitatively different mechanism for nucleation and growth of twins. The mechanism can be briefly described as follows. Penetration of a   precipitate by two 1/2(110) edge dislocations travelling on adjacent {111} glide planes triggers nucleation (at the interface of the precipitate and the matrix) and emission of Shockley partial of screw character on the glide plane of the edge dislocation, which entered the precipitate first (generating trailing high-energy anti-phase boundary (APB)). Propagation of this Shockley partial into the precipitate converts the APB into super intrinsic stacking fault (SISF). The recurring arrival of additional edge dislocations on the glide planes adjacent to the configuration described above leads to formation of super extrinsic stacking fault SESF, subsequent micro-twin formation, and growth of the twinned region. We demonstrate the proposed mechanism via molecular dynamics simulations.

Ni-based superalloys↗

NASA NTRSDate not supplied

Energy landscape in Ni-Co-Cr and related alloys

Among multi-principal element alloys, the NiCoCr middle-entropy alloy has an outstanding combination of strength and ductility at both low and elevated temperatures. Equiatomic NiCoCr is a single-phase alloy with the face centered cubic (fcc) crystal structure. A low stacking fault energy in the fcc matrix is a cause of a relatively low creep in this alloy. The hexagonal close-packed (hcp) structure differs from the fcc by a stacking of atomic layers. The energy difference between the hcp and fcc structures is known to correlate with the stacking fault energy in the fcc phase. We compute formation and relative structural energies versus composition in the Ni-Co-Cr ternary and related quaternary systems, discuss possibilities of compositional adjustments, and compare theoretical predictions with experiment. We acknowledge funding by NASA’s Aeronautics Research Mission Directorate (ARMD) via Transformational Tools and Technologies (TTT) Project.

NiCoCr↗

NASA NTRSDate not supplied

Energy landscape in Ni-Co-Cr and related alloys

Multiscale↗

NASA NTRS1988

Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates

GaAs has been grown on porous Si directly and on Si buffer layer-porous Si substrates by molecular-beam epitaxy. In the case of GaAs growth on porous Si, transmission electron microscopy (TEM) reveals that the dominant defects in GaAs layers grown on porous Si are microtwins and stacking faults, which originate from the GaAs/porous Si interface. GaAs is found to penetrate into the porous Si layers. By using a thin Si buffer layer (50 nm), GaAs penetration diminishes and the density of microtwins and stacking faults is largely reduced and localized at the GaAs/Si buffer interface. However, there is a high density of threading dislocations remaining. Both Si (100) aligned and four degree tilted substrates have been examined in this study. TEM results show no observable effect of the tilted substrates on the quality of the GaAs epitaxial layer.

Mii, Y. J.↗

NASA NTRS1980

Dislocation dissociation in some f.c.c. metals

The dissociation of a perfect screw dislocation into a stacking fault in an f.c.c. lattice is modeled by the modified lattice statics. The interatomic potentials are obtained from the work of Esterling and Swaroop and differ substantially from those empirical potentials usually employed in defect simulations. The calculated stacking fault widths for aluminum, copper, and silver are in good agreement with weak beam microscopy results.

Esterling, D. M.↗

NASA NTRS1987

TEM investigation of beta-SiC grown epitaxially on Si substrate by CVD

A transmission electron microscopy study is being conducted on the microstructure of beta-SiC films grown epitaxially on 001-plane silicon by chemical vapor deposition. Observations have been made in plain view and in cross-section. A high density of stacking faults has been found in the bulk of the epilayer which are bounded by partials of the Shockley type with Burgers vectors 1/6 211-line. Cross-sectional high resolution electron microscopy of the interface has shown it to be semicoherent with misfit dislocations to accommodate the lattice parameter difference between the substrate and the epilayer. In addition to misfit dislocations, a high density of twins and some stacking faults are present in the SiC near the interface. Mechanisms for the nucleation and growth of these defects are discussed.

Chorey, C. M.↗

NASA NTRS2024

Effects of alloying elements on twinning in Ni-based superalloys

Micro-twinning is the major creep deformation mechanism in Ni-based superalloys at temperatures above 700 °C. Recent experiments suggest that superlattice stacking faults in y' phase may serve as the precursors to twin formation. Segregation of alloying elements to these precursors may have a significant effect on formation and extension of micro-twins. Using atomistic modeling we investigate and explain the effects of Nb and Cr alloying additions on these processes. The simulation shows that Nb increases the creep resistance which is mostly associated with impeding the reordering of the high energy double complex stacking fault. Cr, on the other hand, promotes twin growth, degrading the high temperature creep properties. These results can help to understand the effects of elemental composition of the alloy on creep resistance.

Ni-based superalloys↗

NASA NTRSDate not supplied

Effects of Alloying Elements on Twinning in Ni-Based Superalloys

Ni-based superalloys↗

NASA NTRS1987

Improved beta-SiC heteroepitaxial films using off-axis Si substrates

All beta-SiC films grown using on-axis (001) Si substrates that have been examined with transmission electron microscopy exhibit a high density of interfacial twins, stacking faults, and antiphase disorder. The antiphase boundaries can be decorated by chemical etching, sputter etching, wet oxidation, and beta-SiC growth in the presence of diborane. All traces of antiphase disorder are eliminated when the heteroepitaxial growth is carried out on vicinal (001) Si substrates that are tilted 2 deg about a 110-line axis. In addition, growth on the off-axis Si produces beta-SiC films that are significantly smoother than on-axis films. The density of stacking faults is apparently unaffected by growth on the off-axis substrates.

Powell, J. A.↗

NASA NTRS1978

The impact of defects on the photovoltaic potential of RTR silicon ribbon

Silicon ribbon grown at a high rate by the ribbon-to-ribbon (RTR) method contains a variety of defects and can exhibit an unusual dendritic morphology. This paper is a study of the effect of the defect structure and dendritic morphology on the photovoltaic potential of RTR ribbon. Defects found in RTR ribbon include grain boundaries, twin planes, stacking faults and dislocations. The electrical activity of these defects is investigated by measuring the diffusion length in the ribbon; by fabricating small area diodes on the ribbon and evaluating their photoresponse; and by using a scanning electron microscope in the electron beam induced current mode. It is concluded that although grain boundaries serve very effectively as recombination centers, they do not occur frequently enough in RTR ribbons to significantly affect the generation current. Dislocation densities up to 1,000,000/sq cm can be tolerated without strongly reducing the photoresponse. Similarly, linear boundaries such as twin planes or stacking faults do not affect the cell performance up to densities of 1000/sq cm.

Baghdadi, A.↗

NASA NTRS1971

Evaluation of structural defects in crystals: A prerequisite to crystal growth in space

Analysis of crystals to be grown in space with emphasis on dislocations and stacking faults

Jain, V. K.↗

NASA NTRS1975

Oxide nucleation on thin films of copper during in situ oxidation in an electron microscope

Single-crystal copper thin films were oxidized at an isothermal temperature of 425 C and at an oxygen partial pressure of 0.005 torr. Specimens were prepared by epitaxial vapor deposition onto polished faces of rocksalt and were mounted in a hot stage inside the ultrahigh-vacuum chamber of a high-resolution electron microscope. An induction period of roughly 30 min was established which was independent of the film thickness but depended strongly on the oxygen partial pressure and to exposure to oxygen prior to oxidation. Neither stacking faults nor dislocations were found to be associated with the Cu2O nucleation sites. The experimental data, including results from oxygen dissolution experiments and from repetitive oxidation-reduction-oxidation sequences, fit well into the framework of an oxidation process involving the formation of a surface charge layer, oxygen saturation of the metal with formation of a supersaturated zone near the surface, and nucleation followed by surface diffusion of oxygen and bulk diffusion of copper for lateral and vertical oxide growth, respectively.

Heinemann, K.↗

NASA NTRS1976

Oxidation of metals and alloys in controlled atmospheres using in situ transmission electron microscopy and Auger spectrography

Single-crystalline thin films of copper were oxidized at an isothermal temperature of 425 C and at an oxygen partial pressure of .005 Torr in situ in a high-resolution electron microscope. The specimens were prepared by epitaxial vapor deposition onto polished 100 and 110 faces of rocksalt and mounted in a hot stage inside an ultra-high-vacuum specimen chamber of the microscope. Large amounts of sulfur, carbon, and oxygen were detected by Auger electron spectroscopy on the surface of the as-received films and were removed in situ by ion-sputter etching immediately prior to the oxidation. The nucleation and growth characteristics of Cu2O on Cu were studied. Results show that neither stacking faults nor dislocations are associated with the Cu2O nucleation sites. The growth of Cu2O nuclei is linear with time. The experimental findings, including results from oxygen dissolution experiments and from repetitive oxidation-reduction-oxidation sequences, fit well into the framework of an oxidation process involving (a) the formation of a surface-charge layer, (b) oxygen saturation in the metal and (c) nucleation, followed by surface diffusion of oxygen and bulk diffusion of copper for lateral and vertical oxide growth, respectively.

Rao, D. B.↗

NASA NTRS1977

The effect of oxidation-expanded defects upon MOS parameters

Implantation of Ne ions was chosen as a means of introducing a uniformly distributed quantitatively controllable and reproducible amount of microdefects at the silicon surface. Each wafer was ion-implanted on one half of its surface, the other half remaining as a control. Seven implant fluences from 1 trillion to 5 by 10 to the 14th power Ne ions/sq cm were used. The fluences, as well as the concentrations of defects expanded by the subsequent gate oxidation, were correlated with seven different MOS parameters. For implant fluences of 10 to the 14th power per sq cm and above, increasing stacking-fault densities were found. The oxide defect density associated with time-dependent breakdown increased significantly with Ne dose. The presence of oxidation-expanded defects drastically increases the surface-generation velocity and decreases the bulk lifetime. Slight increases in flatband voltage and surface-state density occurred only for the wafers having the greatest defect concentrations. Oxidation of a P-containing damaged silicon surface results in a greater pileup of P at the surface than occurs for the oxidation of a similar but undamaged surface. It appears that the expanding defects restrain the diffusion of P inward from the surface.

Prussin, S.↗

NASA NTRS1979

Fatigue crack propagation behaviour of unidirectionally solidified gamma/gamma-prime-delta eutectic alloys

Fatigue crack propagation studies were carried out on unidirectionally solidified gamma/gamma-prime-delta (Ni-Nb-Al) alloys over an aluminum content range of 1.5-2.5% by weight. The variation of Al content of as-grown alloys did not significantly affect the crack growth behavior of these eutectic composites. The results indicate that the addition of Al to the eutectic dramatically improved the FCP behavior. The gamma/gamma-prime-delta alloy exhibited crack growth rates for a given stress intensity range that are an order of magnitude lower than those for the gamma-delta alloy. It is suggested that this difference in FCP behavior can be explained on the basis of stacking fault energy considerations. Extensive delaminations at the crack tip were also revealed, which contributed to the superior fatigue response. Delamination was predominantly intergranular in nature.

Bretz, P. E.↗

NASA NTRS1978

Flow stress model in metal cutting

A model for the plastic deformation that occurs in metal cutting, based on dislocation mechanics, is presented. The model explains the fundamental deformation structure that develops during machining and is based on the well known Cottrell-Stokes Law, wherein the flow stress is partitioned into two parts; an athermal part which occurs in the shear fronts (or shear bands); and a thermal part which occurs in the lamella regions. The deformation envokes the presence of a cellular dislocation distribution which always exists in the material ahead of the shear process. This 'alien' dislocation distribution either exists in the metal prior to cutting or is produced by the compressive stress field which operates in front of the shear process. The magnitude of the flow stress and direction of the shear are shown to be correlated to the stacking fault energy of the metal being cut. The model is tested with respect to energy consumption rates and found to be consistent with observed values.

Black, J. T.↗