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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Resilience of High-Efficiency CdSeTe:As and CdSeTe:Cu Solar Cells to Proton Irradiation

Power generation in space is currently dominated by expensive III-V multi-junction photovoltaic (PV) devices and cheap crystalline silicon (c-Si) PV devices. Both of these technologies degrade rapidly in proton-radiation-rich space environments, such as the Van Allen belt. The present study of cadmium selenide telluride- (CdSeTe-) based PV devices exposed to 150-to-1500 keV proton irradiation with fluences up to 9 x 1013 cm-2 reveal a more radiation-hard alternative to III-V and c-Si PV technologies. We report on measurement and analysis of current density vs voltage (JV), external quantum efficiency (EQE), external radiative efficiency, and capacitance vs voltage (CV) characteristics. JV characteristics of As-doped CdSeTe devices show 80% remaining power conversion efficiency (PCE) relative to unexposed controls when exposed to 650 keV protons at a fluence of 1012 cm-2. Under these same irradiation conditions, Cu-doped CdSeTe devices demonstrate an even better 95% PCE retention compared with unirradiated control devices. Evidence of radiation-induced absorber p-type doping compensation is observed in the glass-side EQE at 0 V and CV characteristics of most of the irradiated CdSeTe:As devices, but clear compensation is evident only for the most heavily irradiated CdSeTe:Cu devices. Elevated blue-green photocurrent in the film-side 0 V EQE suggests a buried junction in the most heavily irradiated CdSeTe:As devices. Although CdSeTe:Cu devices are the more resilient of the CdSeTe structures, both CdSeTe-based technologies are radiation-hard when compared to c-Si and III-V multi-junction PV.

14 SOLAR ENERGY↗
NASA NTRSDate not supplied

Technology Assessment and Modelling of Three Terminal Tandem Solar Cells for In-Space Utilization

NASA seeks a sustained human presence on the lunar surface. High-efficiency and resilient energy systems are critical to supporting habitats, scientific outposts, and lunar surface operations. Photovoltaics have long been the backbone of space power systems, transitioning from silicon solar cells to multi-junction III-V solar cells, which now dominate state-of-the-art (SOA) technology. Multi-junction cells achieve high efficiency by layering semiconductors, each absorbing a specific portion of the solar spectrum. However, efficiency gains are increasingly constrained by device physics and manufacturing complexity. Additionally, higher-order junctions pose challenges for accurate modelling and performance characterization due to difficulties in replicating the AM0 spectrum.

solar cells↗
DOE OSTI2025

Space environment considerations for perovskite solar cell operations: A review

Designing new technology for extraterrestrial applications certainly presents unique challenges. The environmental stressors perovskite-based photovoltaics must overcome will vary with the environment in which they are deployed. One must consider mission requirements when designing photovoltaic devices and packaging. Different space "theaters" can have dramatically different stressors needing consideration for designing panels for solar power generation. Here, in this article, we review the relevant space environmental conditions that must be considered when designing perovskite-based photovoltaic devices for implementation in space. We specifically consider thermal, radiation, gaseous, weather, and other phenomena most relevant to photovoltaic operation for specific theaters such as Low Earth Orbit, Geosynchronous Orbit, Lunar surface, Mars (orbit and surface), and interplanetary exploration pathways.

14 SOLAR ENERGY↗
NASA NTRS1990

Solar Array Arcing in Plasmas

Solar cells in space plasma conditions are known to arc into the plasma when the interconnects are at a negative potential of a few hundred volts, relative to plasma potential. For cells with silver-coated interconnects, a threshold voltage for arcing exists at about -230 V, as found in both ground and LEO experiments. The arc rate beyond the threshold voltage depends nearly linearly on plasma density, but has a strong power-law dependence on voltage, such that for small increments in operating voltage there is a large increment in arc rate. The arcs generate broadband radio interference and visible light. In ground tests, interconnects have been damaged by arcs in cells having insufficient isolation from a source of high current. Models for the arcs are highly dependent on the choice of interconnect conductor material exposed to the plasma and possibly on the geometry and choice of adjacent insulator material. Finally, new technology solar cells use copper for the cell interconnects, a material which may have a lower arcing threshold voltage than silver. It is expected, from ground tests of simulated solar cells, that any junction of conductor and insulator exposed to space plasma conditions will arc into the plasma at a few hundred volts negative potential, relative to the local plasma.

Dale C Ferguson↗