Research for the improvement of silicon solar cell efficiency
Research and development on silicon solar cell with improved efficiency
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Research and development on silicon solar cell with improved efficiency
The maximum efficiency of silicon solar cells was calculated and yielded a value near 18%. Additionally, the performance of these high efficiency cells in a synchronous orbit radiation field was calculated and it is suggested that these cells would be superior to present silicon cells. The performance of conventional cells was analyzed and several areas in which performance gains may be achieved are discussed. These areas include improvements in diffused region profile, in reduction of excess forward currents in cells made from low resistivity material, and in the theory for describing complex solar cell structures.
The maximum efficiency of silicon solar cells is calculated and yields a value near 18%. Additionally, the performance of these high efficiency cells in a synchronous orbit radiation field is calculated and indicates that these cells would be superior to present silicon cells at all times. The performance of conventional cells is analyzed and several areas in which performance gains may be achieved are discussed. These areas include improvements in diffused region profile, in reduction of excess forward currents in cells made from low resistivity material and in the theory for describing complex solar cell structures.
One potential means of improving the efficiency of solar cells especially after space irradiation is to incorporate built-in fields into the device through the use of impurity doping gradients. A detailed numerical calculation of solar cell performance has been used to study various types of doping gradients. In general, the predicted improvements in performance have been less than previously reported due to various device effects such as, high injection and the dependence of lifetime on doping density.
Efficiency and operating life is an economic attribute in silicon solar cells application. The efficiency improvements made during the 30 year existence of the silicon solar cells, from about 6% efficiency at the beginning to 19% in the most recent experimental cells is illustrated. In the more stationary periods, the effort was oriented towards improving radiation resistance and yields on the production lines, while, in other periods, the emphasis was on reaching new levels of efficiency through better cell design and improved material processing. First results were forthcoming from the recent efforts. Considerably more efficiency advancement in silicon solar cells is expected, and the anticipated attainment of efficiencies significantly above 20% is discussed. Major advances in material processing and in the resulting material perfection are required.
The capabilities of the new technique of Molecular Beam Epitaxy (MBE) are applied to the growth of high efficiency silicon solar cells. Because MBE can provide well controlled doping profiles of any desired arbitrary design, including doping profiles of such complexity as built-in surface fields or tandem junction cells, it would appear to be the ideal method for development of high efficiency solar cells. It was proposed that UCLA grow and characterize silicon films and p-n junctions of MBE to determine whether the high crystal quality needed for solar cells could be achieved.
Ion-beam sputtering, fabrication of oxide-semiconductor-on-silicon (OSOS) solar cells, results in cells of 12% efficiency. Ion-beam sputtering technique is compatible with low-cost continuous fabrication and requires no high-temperature processing.
A study was conducted to identify loss mechanisms in high efficiency silicon solar cells. The following were considered: (1) recombination loss mechanisms; (2) high efficiency cells; (3) very high efficiency cells; and (4) ultra high efficiency cells.
Organometallic sources are available for all the III-V elements and a variety of dopants; thus it is possible to use the technique to grow a wide variety of semiconductor compounds. AlGaAsSb and AlGaInAs alloys for multijunction monolithic solar cells were grown by OM-VPE. While the effort concentrated on terrestrial applications, the success of OM-VPE grown GaAs/AlGaAs concentrator solar cells (23% at 400 suns) demonstrates that OM-VPE is suitable for growing high efficiency solar cells in large quantities for space applications. In addition, OM-VPE offers the potential for substantial cost reduction of photovoltaic devices with scale up and automation and due to high process yield from reproducible, uniform epitaxial growths with excellent surface morphology.
A review is given of NASA photovoltaic research with emphasis on the activities of the Lewis Research Center. High efficiency solar cell research is discussed, as well as solar arrays, multi-junction cell bandgaps, and plasmon coupling.
NASA involvement in photovoltaic energy conversion research development and applications spans over two decades of continuous progress. Solar cell research and development programs conducted by the Lewis Research Center's Photovoltaic Branch have produced a sound technology base not only for the space program, but for terrestrial applications as well. The fundamental goals which have guided the NASA photovoltaic program are to improve the efficiency and lifetime, and to reduce the mass and cost of photovoltaic energy conversion devices and arrays for use in space. The major efforts in the current Lewis program are on high efficiency, single crystal GaAs planar and concentrator cells, radiation hard InP cells, and superlattice solar cells. A brief historical perspective of accomplishments in high efficiency space solar cells will be given, and current work in all of the above categories will be described. The applicability of space cell research and technology to terrestrial photovoltaics will be discussed.
Solar cells have been used to convert sunlight to electrical energy for many years and also offer great potential for non-solar energy conversion applications. Their greatly improved performance under monochromatic light compared to sunlight, makes them suitable as photovoltaic (PV) receivers in laser power beaming applications. Laser beamed power to a PV array receiver could provide power to satellites, an orbital transfer vehicle, or a lunar base. Gallium arsenide (GaAs) and indium phosphide (InP) solar cells have calculated efficiencies of more than 50 percent under continuous illumination at the optimum wavelength. Currently high power free-electron lasers are being developed which operate in pulsed conditions. Understanding cell behavior under a laser pulse is important in the selection of the solar cell material and the laser. An experiment by NAsA lewis and JPL at the AVLIS laser facility in Livermore, CA presented experimental data on cell performance under pulsed laser illumination. Reference 5 contains an overview of technical issues concerning the use of solar cells for laser power conversion, written before the experiments were performed. As the experimental results showed, the actual effects of pulsed operation are more complicated. Reference 6 discusses simulations of the output of GaAs concentrator solar cells under pulsed laser illumination. The present paper continues this work, and compares the output of Si and GaAs solar cells.
Under ideal conditions the GaAs solar cell should be able to operate at an AMO efficiency exceeding 27 percent, whereas to date the best measured efficiencies barely exceed 19 percent. Of more concern is the fact that there has been no improvement in the past half decade, despite the expenditure of considerable effort. State-of-the-art GaAs efficiency is analyzed in an attempt to determine the feasibility of improving on the status quo. The possible gains to be had in the planar cell. An attempt is also made to predict the efficiency levels that could be achieved with a grating geometry. Both the N-base and the P-base BaAs cells in their planar configurations have the potential to operate at AMO efficiencies between 23 and 24 percent. For the former the enabling technology is essentially in hand, while for the latter the problem of passivating the emitter surface remains to be solved. In the dot grating configuration, P-base efficiencies approaching 26 percent are possible with minor improvements in existing technology. N-base grating cell efficiencies comparable to those predicted for the P-base cell are achievable if the N surface can be sufficiently passivated.
Oxygen and carbon related defects in silicon, particularly as related to high-efficiency silicon solar cells were studied. A summary of oxygen processes in silicon versus process temperature was shown along with experimental results. The anamolous diffusion of oxygen was explained by the dissociation of the center allowing O sub i to move through the lattices.
High-efficiency, monolithic, two-color, three-terminal solar cells were fabricated by a novel growth technique, vacuum metal-organic chemical vapor deposition. The technique uses the expensive metal alkyls efficiently and toxic gases sparingly. The fact that the outer chamber is constructed of nonbreakable stainless steel is an attractive safety feature associated with this deposition system.
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High-efficiency dendritic cells were discussed. The influence of twin planes and heat treatment on the location and effect of trace impurities was of particular interest. Proper heat treatment often increases efficiency by causing impurities to pile up at twin planes. Oxide passivation had a beneficial effect on efficiency. A very efficient antireflective (AR) coating of zinc selenide and magnesium fluoride was designed and fabricated. An aluminum back-surface reflector was also effective.
Doping is used in many pn junction devices, such as polycrystalline solar cells, to increase the strength of the junction field to assist charge carrier collection and thus partially mitigate nonradiative recombination losses. We demonstrate a different doping characteristic for inorganic solar cells: using dopants to reduce charge carrier trapping and electronic band tails. Alloying CdTe with Se to form CdSeTe semiconductor reduced recombination, but CdSeTe has more complex defect states which can limit further efficiency gains due to charge carrier trapping and trap-limited mobility. Doping CdSeTe with P (but not N, As, or Sb in this study) reduces band tails (Urbach energies) and lessens the impact of the near valence band trap states, with ambipolar mobilities improving to >50 cm 2 V −1 s −1 , fill factor increasing from 76% to 79%, and efficiencies increasing by 0.9% absolute. Simulations are used to show how such defect reduction improves performance in the radiative limit.