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Several semiconducting compounds with the skutterudite structure are attractive materials for thermoelectric and electronic applications.
Recent experimental results on semiconductors with the skutterudite crystal structure show that these materials possess attractive trasport properties and have a good potential for achieving ZT values substantially larger than for state-of-the-art thermoelectic materials.
New semiconducting materials with p-type carrier mobility values much higher than state-of-art semiconductors discovered. Nine compounds, antimonides CoSb(sub3), RhSb(sub3), IrSb(sub3), arsenides CoAs(sub3), RhAs(sub3), IrAs(sub3), and phosphides CoP(sub3), RhP(sub3) and IrP(sub3), exhibit same skutterudite crystallographic structure and form solid solutions of general composition Co(1-x-y)RH(x)Ir(y)P(1-w-z)As(w)Sb(z). Materials exhibit high hole mobilities, high doping levels, and high electronic figures of merit. Some compositions show great potential for application to thermoelectric devices.
Materials with the skutterudite crystal structure possess attractive transport properties and have a good potential for achieving ZT values substantially larger than for state-of-the-art thermoelectric materials.
Two types of promising phosphide skutterudite materials, Co(1-x)NixP3 (x= 0.025 to 0.70) and CoAs(3-x)Px (x=0.5 to 0.10), have been synthesized and their transport properties measured. These compounds were prepared using a direct synthesis technique. The samples were hot pressed and analyzed by electron microprobe microscopy. Hall Effect measurements were conducted to determine the electrical conductivity, mobility and carrier concentration. In addition, Seebeck voltage and thermal conductivity measurements were performed. The thermoelectric properties are presented anddiscussed as a function of temperature up to 1273 K. The thermal stability of the primary CoP3 was examined in a static vacuum under isothermal and in-gradient conditions. The effect of the presence of 1 atm of a cover gas on the material loss rate was analyzed.
Compounds with the skutterudite structure have recently been identified as advanced.
The Thermal Energy Conversion Technologies Group at the Jet Propulsion Laboratory has been pursuing the development of thermopiles capable of higher temperature operation in support of terrestrial and space sensing applications in extreme environments. The next-generation sensor technology would rely on filled skutterudite (SKD) compounds, the same materials currently being considered for use in the enhanced Multi-Mission Radioisotope Thermoelectric Generator (eMMRTG). We report on the design, development and fabrication of SKD-based prototype thermopile devices. The beginning-of-life (BOL) experimental and predicted performance of the SKD-based prototype thermopile in terms of electrical resistance, output voltage, current, power output and efficiency in the 423 to 723 K operating temperature range is reported and discussed.
A performance test of a Skutterudite-based unicouple (MAY-04) with a metallic coating to suppress the sublimation of antimony from the legs near the hot junction is performed in vacuum (~ 9 x10-7 torr) for ~ 2,000 hours at hot and cold junction temperatures of 892.1 + 11.9 K and 316.1 + 5.5 K, respectively. The p-leg is made of CeFe3.5Co0.5Sb12 and the n-leg is made of CoSb3. Presented are the measured voltage-current characteristics, electrical power, open-circuit voltage, and Seebeck coefficients of the legs as functions of cumulative test time. Also presented is the estimate of the conversion efficiency, shortly (~ 96 hrs) after the start of test. To demonstrate the effectiveness of the metallic coating, the measurements for MAY-04 are compared with those of two uncoated unicouples of the same leg materials (MAR-03 and JUN-03), which had been tested earlier. The cross-sectional areas of the legs in MAY-04 are larger than those in MAR-03 and JUN-03, tested in argon cover gas at ~ 0.051-0.068 MPa for 450 and 1200 hours, respectively. The open circuit voltage, Voc (204 mV) of MAY-04 at Beginning-Of-Test (BOT) is almost the same as that of MAR-03, but higher than that of JUN-03 (~180 mV). Although the argon gas effectively decreased antimony loss from legs of MAR-03 and JUN-03, marked degradations in performance occurred with time in these tests. Conversely, the metallic coating in MAY-04 effectively reduced the performance degradation with cumulative test time. The estimated peak efficiency of MAY-04, shortly after BOT (10.65%) is only ~ 0.37 percentage point lower than the theoretical value, assuming zero side heat losses and zero contact resistance per leg. The peak power of MAY- 04 decreased by only ~12%, from its BOT value of ~1.6 We to ~ 1.4 We after ~ 2,000 of cumulative testing
Thermoelectric properties of CoP(sub 3) and CeFe(sub 4)P(sub 12) have been measured for the first time.
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Young's modulus, bulk density, fracture strength, and fracture toughness of alpha silicon carbide manufactured by extrusion and by isopressing were measured at room and elevated temperature in order to determine material feasibility as augers for the Tile Overlay Repair attachment. The measured properties of extruded and isopressed materials differ significantly, with the extruded material exhibiting marked strength anisotropy and lower density. The measurements were made between July and September 2006 at Glenn Research Center (GRC), in order to obtain design data for use in structural and thermal mathematical models.
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