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At least 37 records · Page 2

200 mm sensor development using bonded wafers

Sensors fabricated from high resistivity, float zone, silicon material have been the basis of vertex detectors and trackers for the last 30 years. The areas of these devices have increased from a few square cm to > 200m 2 for the existing CMS tracker. High Luminosity Large Hadron Collider (HL-LHC), CMS and ATLAS tracker upgrades will each require more than 200 m 2 of silicon and the CMS High Granularity Calorimeter (HGCAL) will require more than 600 m 2 . The cost and complexity of assembly of these devices is related to the area of each module, which in turn is set by the size of the silicon sensors. In addition to large area, the devices must be radiation hard, which requires the use of sensors thinned to 200 microns or less. The combination of wafer thinning and large wafer diameter is a significant technical challenge, and is the subject of this work. In this paper we describe work on development of thin sensors on 200 mm wafers using wafer bonding technology. Results of development runs with float zone, Silicon-on-Insulator and Silicon-Silicon bonded wafer technologies are reported.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Advancing simulations of coupled electron and phonon nonequilibrium dynamics using adaptive and multirate time integration

Electronic structure calculations in the time domain provide a deeper understanding of nonequilibrium dynamics in materials. The real-time Boltzmann equation (rt-BTE), used in conjunction with accurate interactions computed from first principles, has enabled reliable predictions of coupled electron and lattice dynamics. However, the timescales and system sizes accessible with this approach are still limited, with two main challenges being the different timescales of electron and phonon interactions and the cost of computing collision integrals. As a result, only a few examples of these calculations exist, mainly for two-dimensional (2D) materials. Here we leverage adaptive and multirate time integration methods to achieve a major step forward in solving the coupled rt-BTEs for electrons and phonons. Relative to conventional (non-adaptive) time-stepping, our approach achieves a 10x speedup for a target accuracy, or greater accuracy by 3–6 orders of magnitude for the same computational cost, enabling efficient calculations in both 2D and bulk materials. This efficiency is showcased by computing the coupled electron and lattice dynamics in graphene up to ~100 ps, as well as modeling ultrafast lattice dynamics and thermal diffuse scattering maps in bulk materials (silicon and gallium arsenide). In addition to improved efficiency, our adaptive method can resolve the characteristic rates of different physical processes, thus naturally bridging different timescales. This enables simulations of longer timescales and provides a framework for modeling multiscale dynamics of coupled degrees of freedom in matter. Our work opens new opportunities for quantitative studies of nonequilibrium physics in materials, including driven lattice dynamics with phonons coupled to electrons, spin, and other degrees of freedom.

Yao, Jia [California Institute of Technology (CalT↗

Probing Clustering Dynamics between Silicon and PAA or LiPAA Slurries under Processing Conditions

This work explores the complex interplay between slurry aggregation, agglomeration, and conformation (i.e., shape) of poly(acrylic acid) (PAA)- and lithiated PAA-based silicon slurries as a function of the shear rate and the resulting slurry homogeneity. These values were measured by small-angle neutron scattering (SANS) and rheology-coupled ultra-SANS at conditions relevant to battery electrode casting. Different binder solution preparation methods, either a ball milling (BM) process or a planetary centrifugal mixing (PCM) process, dramatically modify the resulting polymer dynamics and organization around a silicon material. This is due to the different energy profiles of mixing where the more violent and higher energy PCM causes extensive breakdown and reformation of the binder, which is now likely in a branched conformation, while the lower energy BM results in simply lower-molecular weight linear polymers. In conclusion, the breakdown and reorganization of the polymer structure affect silicon slurry homogeneity, which affects subsequent electrode architecture.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Reversibly growing crosslinked polymers with programmable sizes and properties

Growth constitutes a powerful method to post-modulate materials’ structures and functions without compromising their mechanical performance for sustainable use, but the process is irreversible. To address this issue, we here report a growing-degrowing strategy that enables thermosetting materials to either absorb or release components for continuously changing their sizes, shapes, compositions, and a set of properties simultaneously. The strategy is based on the monomer-polymer equilibrium of networks in which supplying or removing small polymerizable components would drive the networks toward expansion or contraction. Using acid-catalyzed equilibration of siloxane as an example, we demonstrate that the size and mechanical properties of the resulting silicone materials can be significantly or finely tuned in both directions of growth and decomposition. The equilibration can be turned off to yield stable products or reactivated again. During the degrowing-growing circle, material structures are selectively varied either uniformly or heterogeneously, by the availability of fillers. Our strategy endows the materials with many appealing capabilities including environment adaptivity, self-healing, and switchability of surface morphologies, shapes, and optical properties. Since monomer-polymer equilibration exists in many polymers, we envision the expansion of the presented strategy to various systems for many applications.

36 MATERIALS SCIENCE↗

Two-Dimensional Siloxene Nanosheets: Understanding the Effect of Heat Treatment on the Surface Chemistry and Resulting Electrochemistry in Lithium-Based Batteries

Two-dimensional (2D) silicon materials are conceptually appealing as negative electrode materials in lithium-ion batteries due to their layered morphology, which can accommodate (de)lithiation-induced volume changes. Herein, heat treatment of 2D Siloxene materials was used to modify the surface functional groups to determine the impact on the electrochemical behavior. Spectroscopic characterization of the heat-treated nanosheets confirmed the loss of oxygenated and hydride surface functional groups with an increased annealing temperature. Formation and disproportionation of the amorphous suboxides with increasing heat treatment were affirmed with lab and synchrotron-based measurements. A reduced irreversible capacity was observed for Siloxene with a higher temperature heat treatment consistent with the formation of a more favorable surface electrolyte interphase (SEI). A Siloxene-400||NMC622 full cell (prepared with 400 °C-annealed Siloxene (Siloxene-400) and LiNi 0.6 Mn 0.2 Co 0.2 O 2 (NMC622)) showed significantly enhanced capacity and rate capability compared to a nano Si||NMC622 cell. Finally, these results illustrate the ability of thermal annealing to modify the surface functional groups of Siloxene and highlight the favorable impact of the appropriate surface functionality on the electrochemistry of Siloxene in lithium cells.

25 ENERGY STORAGE↗

Fluoro‐Ethylene‐Carbonate Plays a Double‐Edged Role on the Stability of Si Anode‐Based Rechargeable Batteries During Cycling and Calendar Aging

Abstract The energy storage density of Li‐ion batteries can be improved by replacing graphite anodes with high‐capacity Si‐based materials, though instabilities have limited their implementation. Performance degradation mechanisms that occur in Si anodes can be divided into cycling stability (capacity retention after repeated battery cycles) and calendar aging (shelf life). While cycling instabilities and improvement strategies have been researched intensively, there is little known about the underlying mechanisms that cause calendar aging. In this work, multiple electron microscope techniques are used to explore the mechanism that governs calendar aging from the sub‐nanometer‐to‐electrode scale. Plasma focused ion beam tomography is used to create 3D reconstructions of calendar aged electrodes and revealed the growth of a LiF‐rich layer at the interface between the copper current collector and the silicon material, which can lead to delamination and increased interfacial impendence. The LiF layer appeared to derive from the fluoro‐ethylene‐carbonate electrolyte additive, which is commonly used to improve cycling stability in Si‐based systems. The results reveal that additives necessary to improve cycling stability can cause performance degradation over the long‐term during calendar aging. The results show that high performing, stable systems require careful design to simultaneously mitigate both cycling and calendar aging instabilities.

25 ENERGY STORAGE↗

High thermoelectric figure of merit of porous Si nanowires from 300 to 700 K.

Thermoelectrics operating at high temperature can cost-effectively convert waste heat and compete with other zero-carbon technologies. Among different high-temperature thermoelectrics materials, silicon nanowires possess the combined attributes of cost effectiveness and mature manufacturing infrastructures. Despite significant breakthroughs in silicon nanowires based thermoelectrics for waste heat conversion, the figure of merit (ZT) or operating temperature has remained low. Here, we report the synthesis of large-area, wafer-scale arrays of porous silicon nanowires with ultra-thin Si crystallite size of ~4 nm. Concurrent measurements of thermal conductivity (κ), electrical conductivity (σ), and Seebeck coefficient (S) on the same nanowire show a ZT of 0.71 at 700 K, which is more than ~18 times higher than bulk Si. This ZT value is more than two times higher than any nanostructured Si-based thermoelectrics reported in the literature at 700 K. Experimental data and theoretical modeling demonstrate that this work has the potential to achieve a ZT of ~1 at 1000 K.

36 MATERIALS SCIENCE↗

Characterization of PIPS detectors for measurement of radioxenon

The International Monitoring System arm of the Comprehensive Nuclear-Test-Ban Treaty Organization utilizes sampling of atmospheric radioxenon to scan the world for nuclear testing events. Current designs utilized in the field involve plastic scintillator cells run in coincidence with Sodium Iodide (NaI) or High Purity Germanium (HPGe) detectors. The use of plastic scintillators as electron detectors exhibit some issues in comparison to other materials. Silicon detectors are analyzed as an alternative to plastic scintillators for beta detection based on their higher energy resolution and lowered memory effect. A radioxenon detection setup was created with the intent of measuring radioxenon samples using coincidence counting between silicon and NaI detectors as well as silicon and HPGe. Finally, the absolute efficiency of both setups is calculated and compared.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗

Selection of optimal wavelengths for optical soiling modelling and detection in photovoltaic modules

Soiling impacts the photovoltaic (PV) module performance by decreasing the amount of light reaching the photovoltaic cells and by changing their external spectral response. Currently, the soiling monitoring market is moving toward optical sensors that measure transmittance or reflectance, rather than directly measuring the impact of soiling on the performance of photovoltaic modules. These sensors, which use a single optical measurement, are not able to correct the soiling losses that depend on the solar irradiance spectra and on the spectral response of the monitored PV material. This work investigates methods that can improve the optical detection of soiling by extracting the full soiling spectrum profiles using only two or three monochromatic measurements. Spectral transmittance data, measured with a spectrophotometer and collected during a 46-week experimental soiling study carried out in Jaén, Spain, was analysed in this work. The use of a spectral profile for the hemispherical transmittance of soiled PV glass is found to significantly improve the soiling detection, returning the lowest errors independently of the PV materials and irradiance conditions. In addition, this work shows that it is also possible to select the measurement wavelengths to minimize the soiling loss detection error depending on the monitored PV semiconductor material (silicon, CdTe, a-Si, CIGS and a representative perovskite). The approaches discussed in this work are also found to be more robust to potential measurement errors compared to single wavelength measurement techniques.

14 SOLAR ENERGY↗

X-ray diffraction characterization of magnetostriction in Terfenol-D

The magnetostrictive response of a Terfenol-D pellet was measured via a laboratory-based X-ray diffractometer. X-ray diffraction patterns were collected from the pellet sample with and without the presence of an applied magnetic field (~30 mT) generated by placing a large magnet under the pellet. A standard reference material, Silicon 640c, was employed as an internal standard. Magnetostriction values of 323 and 227 ppm Δl/l were determined for the (104) and (110) indexed peaks, respectively, assuming a rhombohedral structure for Terfenol-D. A threshold noise level value of ~20 to 30 ppm Δl/l was suggested based on before/after measurements in the absence of the applied field. No clear evidence of domain wall rotation was detected via changes in relative intensities of diffraction peaks in the presence of the applied magnetic field.

Magnetostriction↗

Specifications and pre-production of n + -in-p large-format strip sensors fabricated in 6-inch silicon wafers, ATLAS18, for the Inner Tracker of the ATLAS Detector for High-Luminosity Large Hadron Collider

Abstract The ATLAS experiment is constructing new all-silicon inner tracking system for HL-LHC. The strip detectors cover the radial extent of 40 to 100 cm. A new approach is adopted to use p-type silicon material, making the readout in n + -strips, so-called n + -in-p sensors. This allows for enhanced radiation tolerance against an order of magnitude higher particle fluence compared to the LHC. To cope with varying hit rates and occupancies as a function of radial distance, there are two barrel sensor types, the short strips (SS) for the inner 2 and the long strips (LS) for the outer 2 barrel cylinders, respectively. The barrel sensors exhibit a square, 9.8 × 9.8 cm 2 , geometry, the largest possible sensor area from a 6-inch wafer. The strips are laid out in parallel with a strip pitch of 75.5 μm and 4 or 2 rows of strip segments. The strips are AC-coupled and biased via polysilicon resistors. The endcap sensors employ a “stereo-annulus” geometry exhibiting a skewed-trapezoid shapes with circular edges. They are designed in 6 unique shapes, R0 to R5, corresponding to progressively increasing radial extents and which allows them to fit within the petal geometry and the 6-inch wafer maximally. The strips are in fan-out geometry with an in-built rotation angle, with a mean pitch of approximately 75 μm and 4 or 2 rows of strip segments. The eight sensor types are labeled as ATLAS18xx where xx stands for SS, LS, and R0 to R5. According to the mechanical and electrical specifications, CAD files for wafer processing were laid out, following the successful designs of prototype barrel and endcap sensors, together with a number of optimizations. A pre-production was carried out prior to the full production of the wafers. The quality of the sensors is reviewed and judged excellent through the test results carried out by vendor. These sensors are used for establishing acceptance procedures and to evaluate their performance in the ATLAS collaboration, and subsequently for pre-production of strip modules and stave and petal structures.

Instruments & Instrumentation↗

Insights on the cycling behavior of a highly-prelithiated silicon–graphite electrode in lithium-ion cells

Nanosized silicon materials are being developed for use in the anodes of high-energy lithium-ion batteries. However, the high surface areas of these materials increase the rate of parasitic reactions in the electrode, which consume cyclable Li + and degrade battery performance. Prelithiation offers a realistic strategy to compensate for this reactivity, by injecting additional charge into the cell to counterbalance the Li + loss. Interestingly, the benefits offered by prelithiation extend beyond its more obvious purpose. Here, by using a reference electrode in NMC532//Si–Gr cells, we show how prelithiation alters the cycling potentials experienced by the Si-containing anode and how that translates into gains in cycle life. The rate of consumption of the prelithiated charge is lower than that expected from the behavior of non-prelithiated cells. Curiously, the Si particles become partially unresponsive during the C/3 cycling apparently because of kinetic constraints. Electrochemical studies on harvested electrodes in half-cells show that capacities are intact after the long-term cycling and that most of the lithium reservoir is still present in the anode. We conclude that the high capacity retention displayed by the prelithiated cells mainly results from a higher participation of graphite particles during the extended electrochemical cycling.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Understanding the Origin of Tabula Rasa Process-Induced Defects in CZ n-type c-Si

High-temperature annealing, known as Tabula Rasa (TR) has been the subject of recent studies as a method to make n-type CZ silicon material resistant to temperature-induced and process-induced lifetime degradation during solar cell fabrication. In this work, we study the defects responsible for the lifetime changes after TR treatment. We use temperature and injection dependent lifetime spectroscopy (T-IDLS) and the recently introduce defect parameter contour mapping to identify the Energy Level (E t ) and capture cross-section ratio (k) of the most likely process-induced defect. We also present a closer look at changes in surface recombination velocity before and after TR annealing.

bulk lifetime↗

NED_Asteroid_Energy_Deposition

In the event of a potentially catastrophic asteroid impact, with sufficient warning time, deploying a nuclear device remains a powerful option for planetary defense if a kinetic impactor proves insufficient. Predicting the effectiveness of a potential nuclear deflection or disruption mission depends on accurate multiphysics simulations of the device's x-ray energy deposition into the asteroid and the resulting material ablation. These simulations span many orders of magnitude, require a variety of different complex physics packages, and are computationally expensive. Having an efficient and accurate way of modeling this system is necessary for exploring a mission's sensitivity to the asteroid's range of physical properties. To expedite future simulations, we present a completed x-ray energy deposition model developed using the radiation-hydrodynamics code Kull which can be used to initiate a nuclear mitigation mission hydrocode. The model spans a wide variety of possible mission initial conditions: four different asteroid-like materials (Silicon Dioxide, Forsterite, Iron, and Ice), two different source spectra (1 and 2 keV blackbodies), and then a broad range of radiation fluences (0.0001 to 1 kt per square meter), source durations (10 to 100 ns), and asteroid porosities (0 to 80 percent). Using blowoff momentum as the primary metric, the modelinitiated simulation results match the full radiation-hydrodynamics results to within 10 percent. Please reference the journal article: Burkey et al., X-Ray Energy Deposition Model for Simulating Asteroid Response to a Nuclear Planetary Defense Mitigation Mission, Planetary Science Journal, (2023) for more information.

Managan, RobertA↗

Low Threshold Acquisition controller for Skipper CCDs

The development of the Skipper Charge Coupled Devices (Skipper-CCDs) has been a major technological breakthrough for sensing very weak ionizing particles. The sensor allows to reach the ultimate sensitivity of silicon material as a charge signal sensor by unambiguous determination of the charge signal collected by each cell or pixel, even for single electron-hole pair ionization. Extensive use of the technology was limited by the lack of specific equipment to operate the sensor at the ultimate performance. In this work a simple, single-board Skipper-CCD controller is presented, aimed for the operation of the detector in high sensitivity scientific applications. The article describes the main components and functionality of the Low Threshold Acquisition (LTA) together with experimental results when connected to a Skipper-CCD sensor. Measurements show unprecedented deep sub-electron noise of 0.039 e$^-_{rms}$/pix for 5000 pixel measurements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Electrodes with silicon oxide active materials for lithium ion cells achieving high capacity, high energy density and long cycle life performance

Improved negative electrodes can comprise a silicon based active material blended with graphite to provide more stable cycling at high energy densities. In some embodiments, the negative electrodes comprise a blend of polyimide binder mixed with a more elastic polymer binder with a nanoscale carbon conductive additive. The silicon-based blended graphite negative electrodes can be matched with positive electrodes comprising nickel rich lithium nickel manganese cobalt oxides to form high energy density cells with good cycling properties.

Venkatachalam, Subramanian↗

Electrodes with silicon oxide active materials for lithium ion cells achieving high capacity, high energy density and long cycle life performance

Improved negative electrodes can comprise a silicon based active material blended with graphite to provide more stable cycling at high energy densities. In some embodiments, the negative electrodes comprise a blend of polyimide binder mixed with a more elastic polymer binder with a nanoscale carbon conductive additive. The silicon-based blended graphite negative electrodes can be matched with positive electrodes comprising nickel rich lithium nickel manganese cobalt oxides to form high energy density cells with good cycling properties.

Venkatachalam, Subramanian↗

Single‐photon emitters in PECVD‐grown silicon nitride films: from material growth to photophysical properties

Abstract Silicon nitride (SiN) is a key material for quantum photonics due to its wide transparency window, high refractive index, low optical losses, and semiconductor foundry compatibility. We study the formation of single‐photon emitters in SiN films grown by plasma‐enhanced chemical vapor deposition (PECVD), exploring their photophysical properties and dependence on growth conditions. Emitters were observed across the entire range of nitrogen‐to‐silicon precursor ratios, from silicon‐rich to nitrogen‐rich conditions, enabled by the low background fluorescence. We demonstrate single‐photon emitters in SiN films with a higher refractive index (1.8–1.9) compared to our previous reports (∼1.7). Notably, nitrogen‐rich, thinner films yield particularly bright emitters with shorter emission lifetimes, likely due to more efficient annealing. Silicon‐rich SiN films exhibit red‐shifted emission, suggesting that composition may provide a mechanism for wavelength tuning. These findings establish the feasibility of emitters formation in foundry standard PECVD tools, advancing the scalability and lab‐to‐fab transition of SiN‐based quantum photonic technologies.

Materials Science↗