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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Manganese oxide microswitch for electronic memory based on neural networks

A solid-state, resistance tailorable, programmable-once, binary, nonvolatile memory switch based on manganese oxide thin films is reported. MnO(x) exhibits irreversible memory switching from conducting (on) to insulating (off) state, with the off and on resistance ratio of greater than 10,000. The switching mechanism is current-triggered chemical transformation of a conductive MnO(2-Delta) to an insulating Mn2O3 state. The energy required for switching is of the order of 4-20 nJ/sq micron. The low switching energy, stability of the on and off states, and tailorability of the on state resistance make these microswitches well suited as programmable binary synapses in electronic associative memories based on neural network models.

Ramesham, R.↗
NASA NTRS2008

Radiation effects assessment of MRAM devices

The Magneto-resistive Random Access Memory (MRAM) from Freescale Semiconductor, MR2A16A, was subjected to heavy ion single event testing. Test results show that this device is sensitive to Single Event Latchup (SEL). The sensitivity of the MRAM was attributed to the complementary metal oxide semiconductor (CMOS) process in which the active portion of this device is constructed. Therefore, the device must be used with caution and may require mitigation techniques if used in a space environment. There was no indication that the MRAM technology itself, the memory element construction, is subject to damage from heavy ions.

McClure, Steve↗
NASA NTRS2001

Future Development of Dense Ferroelectric Memories for Space Applications

The availability of high density, radiation tolerant, nonvolatile memories is critical for space applications. Ferroelectric memories, when fabricated with radiation hardened complementary metal oxide semiconductors (CMOS), can be manufactured and packaged to provide high density replacements for Flash memory, which is not radiation tolerant. Previous work showed ferroelectric memory cells to be resistant to single event upsets and proton irradiation, and ferroelectric storage capacitors to be resistant to neutron exposure. In addition to radiation hardness, the fast programming times, virtually unlimited endurance, and low voltage, low power operation make ferroelectric memories ideal for space missions. Previously, a commercial double level metal 64-kilobit ferroelectric memory was presented. Although the capabilities of radiation hardened wafer fabrication facilities lag behind those of the most modern commercial wafer fabrication facilities, several paths to achieving radiation tolerant, dense ferroelectric memories are emerging. Both short and long term solutions are presented in this paper. Although worldwide major semiconductor companies are introducing commercial ferroelectric memories, funding limitations must be overcome to proceed with the development of high density, radiation tolerant ferroelectric memories.

Philpy, Stephen C.↗
NASA NTRS2010

Electrical Switching of Perovskite Thin-Film Resistors

Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article, Electrically Variable Resistive Memory Devices (MFS-32511-1).

Liu, Shangqing↗
NASA NTRS1989

Read disturb errors in a CMOS static RAM chip

Results are reported from an extensive investigation into pattern-sensitive soft errors (read disturb errors) in the TCC244 CMOS static RAM chip. The TCC244, also known as the SA2838, is a radiation-hard single-event-upset-resistant 4 x 256 memory chip. This device is being used by the Jet Propulsion Laboratory in the Galileo and Magellan spacecraft, which will have encounters with Jupiter and Venus, respectively. Two aspects of the part's design are shown to result in the occurrence of read disturb errors: the transparence of the signal path from the address pins to the array of cells, and the large resistance in the Vdd and Vss lines of the cells in the center of the array. Probe measurements taken during a read disturb failure illustrate how address skews and the data pattern in the chip combine to produce a bit flip. A capacitive charge pump formed by the individual cell capacitances and the resistance in the supply lines pumps down both the internal cell voltage and the local supply voltage until a bit flip occurs.

Wood, Steven H.↗
NASA NTRS1991

Ferroelectric Memory Capacitors For Neural Networks

Thin-film ferroelectric capacitors proposed as nonvolatile analog memory devices. Intended primarily for use as synaptic connections in electronic neural networks. Connection strengths (synaptic weights) stored as nonlinear remanent polarizations of ferroelectric films. Ferroelectric memory and interrogation capacitors combined into memory devices in vertical or lateral configurations. Photoconductive layer modulated by light provides variable resistance to alter bias signal applied to memory capacitor. Features include nondestructive readout, simplicity, and resistance to ionizing radiation. Interrogated without destroying stored analog data. Also amenable to very-large-scale integration. Allows use of ac coupling, eliminating errors caused by dc offsets in amplifier circuits of neural networks.

Thakoor, Sarita↗
NASA NTRS1990

Programmable Analog Memory Resistors For Electronic Neural Networks

Electrical resistance of new solid-state device altered repeatedly by suitable control signals, yet remains at steady value when control signal removed. Resistance set at low value ("on" state), high value ("off" state), or at any convenient intermediate value and left there until new value desired. Circuits of this type particularly useful in nonvolatile, associative electronic memories based on models of neural networks. Such programmable analog memory resistors ideally suited as synaptic interconnects in "self-learning" neural nets. Operation of device depends on electrochromic property of WO3, which when pure is insulator. Potential uses include nonvolatile, erasable, electronically programmable read-only memories.

Ramesham, Rajeshuni↗
NASA NTRS1987

Resistive synaptic interconnects for electronic neural networks

The use of the alpha-Ge(1-x):Al(x) and alpha-Ge(1-x):Cu(x) alloys and Pt/Al2O3 cermet thin films as resistive interconnects for binary synaptic memory arrays is evaluated. The fabrication of the 10-20 microns long, 10 microns wide, and 0.1 micron thick interconnects from the alloys and cermet is described. The current-voltage and switching characteristics of the as-deposited films and the patterned test structure are studied. The resistivity, uniformity, stability, and compatibility of the interconnects are examined. It is observed that alpha-Ge(1-x):Cu(x) alloys have a wide resistivity range and low temperature coefficients of resistance; however, their long-term stability is limited due to their low crystallization temperature. It is detected that the alpha-Ge(1-x):Al(x) alloys have higher crystallization temperatures and their resistivity is not greatly affected by large changes in metal content. The Pt/Al2O3 samples display excellent stability, easy fabrication, and control of resistivity with metal content.

Lamb, J. L.↗
NASA NTRS2011

Source-Coupled, N-Channel, JFET-Based Digital Logic Gate Structure Using Resistive Level Shifters

A circuit topography is used to create usable, digital logic gates using N (negatively doped) channel junction field effect transistors (JFETs), load resistors, level shifting resistors, and supply rails whose values are based on the DC parametric distributions of these JFETs. This method has direct application to the current state-of-the-art in high-temperature (300 to 500 C and higher) silicon carbide (SiC) device production, and defines an adaptation to the logic gate described in U.S. Patent 7,688,117 in that, by removing the level shifter from the output of the gate structure described in the patent (and applying it to the input of the same gate), a source-coupled gate topography is created. This structure allows for the construction AND/OR (sum of products) arrays that use far fewer transistors and resistors than the same array as constructed from the gates described in the aforementioned patent. This plays a central role when large multiplexer constructs are necessary; for example, as in the construction of memory. This innovation moves the resistive level shifter from the output of the basic gate structure to the front as if the input is now configured as what would be the output of the preceding gate, wherein the output is the two level shifting resistors. The output of this innovation can now be realized as the lone follower transistor with its source node as the gate output. Additionally, one may leave intact the resistive level shifter on the new gate topography. A source-coupled to direct-coupled logic translator will be the result.

Krasowski, Michael J.↗
NASA NTRS1990

Solid-state thin-film memistor for electronic neural networks

This paper reports on a tungsten-oxide-based, nonvolatile, electrically reprogrammable, variable resistance device as an analog synaptic memory connection for electronic neural networks. A voltage controlled, reversible injection of H(+) ions in electrochromic thin films of WO3 is utilized to modulate its resistance. A hygroscopic thin film of Cr2O3 is the source of H(+) ions. The resistance of the device can be tailored and stabilized over a wide dynamic range (about 4 orders of magnitude), and the programming speed is modulated by the control voltage. The suitability of such a device in terms of its response speed, reversibility, stability, and cyclability for its use in electronic neural networks is discussed.

Thakoor, S.↗
NASA NTRS2007

The Naturalistic Flight Deck System: An Integrated System Concept for Improved Single-Pilot Operations

This paper reviews current and emerging operational experiences, technologies, and human-machine interaction theories to develop an integrated flight system concept designed to increase the safety, reliability, and performance of single-pilot operations in an increasingly accommodating but stringent national airspace system. This concept, know as the Naturalistic Flight Deck (NFD), uses a form of human-centered automation known as complementary-automation (or complemation) to structure the relationship between the human operator and the aircraft as independent, collaborative agents having complimentary capabilities. The human provides commonsense knowledge, general intelligence, and creative thinking, while the machine contributes specialized intelligence and control, extreme vigilance, resistance to fatigue, and encyclopedic memory. To support the development of the NFD, an initial Concept of Operations has been created and selected normal and non-normal scenarios are presented in this document.

Schutte, Paul C.↗
NASA NTRS2018

Polyurethane Microparticles for Stimuli Response and Reduced Oxidative Degradation in Highly Porous Shape Memory Polymers

Shape memory polymers (SMPs) have been found to be promising biomaterials for a variety of medical applications; however, the clinical translation of such technology is dependent on tailorable properties such as gravimetric changes in degradation environments. For SMPs synthesized from amino-alcohols, oxidation resulting in rapid mass loss may be problematic in terms of loss of material functionality as well as toxicity and cytocompatibility concerns. Control of gravimetric changes was achieved through the incorporation of small molecule antioxidants, either directly into the polymer matrix or included in microparticles to form a SMP composite material. Direct incorporation of small molecule antioxidants, such as phenolic alcohols, was found to alter shape memory attributes and increase elastic modulus at the expense of the strain to failure. Such changes could not ensure retention of the antioxidants and therefore did not increase oxidative stability. However, the inclusion of antioxidants in microparticles was found to produce materials with similar thermomechanical and shape memory properties while increasing oxidative resistance compared to controls. The microparticle composite SMPs also act as a platform for environmental sensing, such as pH-dependent fluorescence shifts and payload release, as demonstrated by fluorescent dyes and the release of antioxidants. The use of polyurethane-urea microparticles in porous SMPs is demonstrated to increase biostability of the materials, by approximately 25%, and ultimately extend their lifespan for use in aneurysm occlusion as determined through calculated in vivo degradation rates corresponding to a porcine aneurysm environment.

Weems, A. C.↗
NASA NTRS2013

Fatigue Resistance of Liquid-assisted Self-repairing Aluminum Alloys Reinforced with Shape Memory Alloys

A self-repairing aluminum-based composite system has been developed using a liquid-assisted healing theory in conjunction with the shape memory effect of wire reinforcements. The metal-metal composite was thermodynamically designed to have a matrix with a relatively even dispersion of a low-melting eutectic phase, allowing for repair of cracks at a predetermined temperature. Additionally, shape memory alloy (SMA) wire reinforcements were used within the composite to provide crack closure. Investigators focused the research on fatigue cracks propagating through the matrix in order to show a proof-of-concept Shape Memory Alloy Self-Healing (SMASH) technology for aeronautical applications.

Wright, M. Clara↗
NASA NTRS1990

Forward Bias Inhibits Single-Event Upsets

Bipolar integrated circuits more resistant to ionizing radiation. Tests show resistance of bipolar integrated logic or memory circuit by single-event upsets increased by imparting forward bias to diode constituted by buried layer of substrate and collector.

Zoutendyk, John A.↗
NASA NTRS1990

Memory switches based on metal oxide thin films

MnO.sub.2-x thin films (12) exhibit irreversible memory switching (28) with an OFF/ON resistance ratio of at least about 10.sup.3 and the tailorability of ON state (20) resistance. Such films are potentially extremely useful as a connection element in a variety of microelectronic circuits and arrays (24). Such films provide a pre-tailored, finite, non-volatile resistive element at a desired place in an electric circuit, which can be electrically turned OFF (22) or disconnected as desired, by application of an electrical pulse. Microswitch structures (10) constitute the thin film element, contacted by a pair of separate electrodes (16a, 16b) and have a finite, pre-selected ON resistance which is ideally suited, for example, as a programmable binary synaptic connection for electronic implementation of neural network architectures. The MnO.sub.2-x microswitch is non-volatile, patternable, insensitive to ultraviolet light, and adherent to a variety of insulating substrates (14), such as glass and silicon dioxide-coated silicon substrates.

Ramesham, Rajeshuni↗
NASA NTRS2020

Comparing Cumulative Flight Thermal Fatigue to Ground Test Results for Memory Components on the Mars Curiosity Rover

This paper explores the methods used to examine Mars Curiosity Rover’s flight temperature data to the Package Qualification and Verification (PQV) accelerated thermal cycle life test data in response to flight anomalies. The redundant Rover Compute Element (RCE-A, B) has experienced an inability to mount the flash memory several times. The leading cause of these anomalies is likely the loss of electrical connectivity, which is theorized to be due to cracks on the memory component solder joints by thermal cycle fatigue. To investigate this theory, the number of thermal cycles accumulated in flight was compared to PQV accelerated thermal cycle life test data. The goal of this study was to inform mission operations of the risk associated with thermal cycling damage on the RCE. However, since the RCE-B does not have continuous temperature data from the Platinum Resistance Thermometer (PRT) closest to the flash memory, a model was made to correlate continuous data from two other nearby sensors on the RCE-B to the noncontiguous sensor. Using the Rainflow Counting Algorithm, the reconstituted data was converted into the number of equivalent thermal cycles. The Coffin-Manson Equation was used to compare flight thermal cycles to the PQV test. The accelerated life test showed cracking on the memory component solder joints after 500 cycles of 80°C temperature excursions. This study found that the RCE-A and RCE-B have undergone an equivalent of 144 and 430 cycles of 80°C temperature excursions during flight, respectively.

Berger, Lindsey N↗
NASA NTRS2021

Comparing Cumulative Flight Thermal Fatigue to Ground Test Results for Memory Components on the Mars Curiosity Rover

This paper explores the methods used to examine Mars Curiosity Rover’s flight temperature data in relation to the Package Qualification and Verification (PQV) accelerated thermal cycle life test data in response to flight anomalies. The redundant Rover Compute Element (RCE-A, B) has experienced an inability to mount the flash memory several times. The leading cause of these anomalies is likely the loss of electrical connectivity, which is theorized to be due to cracks on the memory component solder joints by thermal cycle fatigue. To investigate this theory, the number of thermal cycles accumulated in flight was compared to PQV accelerated thermal cycle life test data. The goal of this study was to inform mission operations of the risk associated with thermal cycling damage on the RCE. However, since the RCE-B does not have continuous temperature data from the Platinum Resistance Thermometer (PRT) closest to the flash memory, a model was made to correlate continuous data from two other nearby sensors on the RCE-B to the noncontiguous sensor. Using the Rainflow Counting Algorithm, the reconstituted data was converted into the number of equivalent thermal cycles. The Coffin-Manson Equation was used to compare flight thermal cycles to the PQV test. The accelerated life test showed cracking on the memory component solder joints after 500 cycles of 80°C temperature excursions. This study found that the RCE-A and RCE-B have undergone an equivalent of 144 and 430 cycles of 80°C temperature excursions during flight, respectively.

Bell, Charles↗