Creep of a Recrystallized Aluminum SAP-Type Alloy
Creep of a recrystallized aluminum sap-type alloy
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Creep of a recrystallized aluminum sap-type alloy
Mechanical properties and recrystallization of electron-beam-melted tungsten and arc-melted tungsten
Evaporation and recrystallization of cadmium sulfide layers - vapor deposition
Recrystallization of evaporated CdS layers in enviroment containing various elements, obtaining oxygen enhanced crystal growth
Recrystallization effect on sliding friction of metals in single-crystal polycrystalline form
Rough surface recrystallization of heated polyethylene extended-chain crystals
Bend transition temperature of arc-cast worked, recrystallized, and welded molybdenum and molybdenum-titanium alloy sheet
Transmission electron microscopic study of microstructure of three recrystallized aluminum- aluminum oxide SAP type alloys
Use of thermally-induced straining for grain refinement in recrystallized tungsten
Evaporated and recrystallized CdS layers, discussing electron mobility, level distribution, capture cross section and techniques of measurement
Friction characteristics and interfacial recrystallization of single-crystal and polycrystalline copper sliding on aluminum oxide
X ray transmission technique to study preferred orientation in recrystallized hot pressed MgO
Chemical vapor deposition welding below recrystallization temperatures for low temperature joining of refractory and nonrefractory metal aerospace structures
Recrystallization characteristics and mechanism of TD nickel
Hugoniot measurements on 15,418, a recrystallized and brecciated gabbroic anorthosite, yield a value of the Hugoniot elastic limit (HEL) varying from 45 to 70 kbar as the final shock pressure is varied from 70 to 280 kbar. Above the HEL and to 150 kbar, the pressure-density Hugoniot is closely described by a hydrostatic equation of state constructed from ultrasonic data for single-crystal plagioclase and pyroxene. Above 150 kbar, the Hugoniot states indicate that a series of one or more shock-induced phase changes are occurring in the plagioclase and pyroxene. From Hugoniot data for both the single-crystal minerals and the Frederick diabase, we infer that the shock-induced high-pressure phases in 15,418 probably consists of a 3.71 g/cu cm density, high-pressure structure for plagioclase and a 4.70 g/cu cm perovskite-type structure for pyroxene.
Silicon recrystallization by laser-beam heating of ribbons proposed. One or both vertical edges of ribbon would not be melted, providing rigid support for moving ribbon. Use of rigid edge means no special atmosphere is required; consequently, electron-beam heating could be used instead of laser-beam heating.
Aluminide intermetallics, because of their strength, microstructural stability, and oxidation resistance at elevated temperatures, represent potential structural materials for use in advanced energy conversion systems. This inherent potential of the intermetallics can currently not be realized in connection with the general brittleness of the materials under ambient conditions. It is pointed out, however, that brittleness is not an inherent characteristic. Single crystals are ductile and polycrystals may be, too, if their grains are fine enough. The present investigation is concerned with an approach for reducing material brittleness, taking into account thermal-mechanically induced grain refinement in NiAl, a B2 aluminide which melts at 1638 C and which retains complete order to its melting point. Attention is given to the kinetics of recrystallization and grain growth of warm-worked, nickel-rich material.
The development of an organic semiconductor solar cell and the effects of the recrystallization of metal free phthalocyanine (H2PC) on the characteristics of NESA/H2PC-PVK/Au sandwich cells were investigated. Alfa-H2PC sandwich cells showed photovoltage and photocurrent in a two direction opposite to that shown y as supplied H2PC cells, which consists mainly of beta-H2PC. Some difference was observed in the response times of the two cells. It is suggested that photocharacteristics change with the specific resistance of the H2PC, which is related to its crystal forms. In the cells with low resistance H2PC carriers are generated in H2PC by illumination, while in high resistance H2PC cells, carriers are generated in PVK which is sensitized with H2PC.