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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Enhanced annealing of GaAs solar cell radiation damage

Solar cells are degraded by radiation damage in space. Investigations have been conducted concerning possibilities for annealing this radiation damage in GaAs solar cells, taking into account the conditions favoring such annealing. It has been found that continuous annealing as well as the combination of injection annealing with thermal annealing can lead to recovery from radiation damage under particularly favorable conditions in GaAs solar cells. The damage caused by both electrons and protons in GaAs solar cells can be substantially reduced by annealing at temperatures as low as 150 C, under appropriate conditions. This possibility makes the GaAs solar cells especially attractive for long space missions, or for missions in severe radiation environments. Attention is given to results concerning periodic thermal annealing, continuous annealing, and injection annealing combined with thermal annealing.

Loo, R.↗
DOE OSTI2020

A Quantum-Based Approach to Predict Primary Radiation Damage in Polymeric Networks

Initial atomistic-level radiation damage in chemically reactive materials is thought to induce reaction cascades that can result in undesirable degradation of macroscale properties. Ensembles of quantum-based molecular dynamics (QMD) simulations can accurately predict these cascades, but extracting chemical insights from the many underlying trajectories is a labor-intensive process that can require substantial a priori intuition. We develop here a general and automated graph-based approach to extract all chemically distinct structures sampled in QMD simulations and apply our approach to predict primary radiation damage of polydimethylsiloxane (PDMS), the main constituent of silicones. A postprocessing protocol is developed to identify underlying polymer backbone structures as connected components in QMD trajectories. Furthermore, these backbones form a repository of radiation-damaged structures. A scheme for extracting and updating a library of isomorphically distinct structures is proposed to identify the spanning set and aid chemical interpretation of the repository. The analyses are applied to ensembles of cascade QMD simulations in which the four element types in PDMS are selectively excited in primary knock-on atom events. Our approach reveals a much higher degree of combinatorial complexity in this system than was inferred through radiolysis experiments. Probabilities are extracted for radiation-induced network changes including formation of branch points, carbon linkages, cycles, bond scissions, and carbon uptake into the Si–O siloxane backbone network. The general analysis framework presented here is readily extendable to modeling chemical degradation of other polymers and molecular materials and provides a basis for future quantum-informed multiscale modeling of radiation damage.

36 MATERIALS SCIENCE↗
DOE OSTI2023

An Introduction to Radiation Damage in Minerals and Ceramics [Slides]

Radiation effects in minerals and ceramics are quite distinct from effects observed in metals. This is largely due to interactions between radiation and the electronic structure of insulating materials that are unique compared to metallic conductors. Most notably, insulators exhibit property changes when energetic particles lose energy to electrons in the solid, whereas metals are unaffected by electronic energy losses. In addition, displacive radiation damage effects (atoms being knocked off their lattice sites by energetic particles) are much more complex in insulators, due to the complexities of their crystal structures (multiple cation and anion sublattices). In this presentation, we will focus on the atomistic mechanisms responsible for radiation damage in minerals and ceramics, when energetic particles lose energy while penetrating a solid. We will consider several examples, including (i) irradiation induced color center formation in gemstones; (ii) latent defects in alkali halides (relevance to thermoluminescent detectors); (iii) radioactive decay-induced amorphization of natural minerals; and (iv) extended defect formation and phase stability in complex oxides.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Radiation damage and dose limits in serial synchrotron crystallography at cryo- and room temperatures

Radiation damage limits the accuracy of macromolecular structures in X-ray crystallography. Cryogenic (cryo-) cooling reduces the global radiation damage rate and, therefore, became the method of choice over the past decades. The recent advent of serial crystallography, which spreads the absorbed energy over many crystals, thereby reducing damage, has rendered room temperature (RT) data collection more practical and also extendable to microcrystals, both enabling and requiring the study of specific and global radiation damage at RT. Here, we performed sequential serial raster-scanning crystallography using a microfocused synchrotron beam that allowed for the collection of two series of 40 and 90 full datasets at 2- and 1.9-Å resolution at a dose rate of 40.3 MGy/s on hen egg white lysozyme (HEWL) crystals at RT and cryotemperature, respectively. The diffraction intensity halved its initial value at average doses ( D 1/2 ) of 0.57 and 15.3 MGy at RT and 100 K, respectively. Specific radiation damage at RT was observed at disulfide bonds but not at acidic residues, increasing and then apparently reversing, a peculiar behavior that can be modeled by accounting for differential diffraction intensity decay due to the nonuniform illumination by the X-ray beam. Specific damage to disulfide bonds is evident early on at RT and proceeds at a fivefold higher rate than global damage. The decay modeling suggests it is advisable not to exceed a dose of 0.38 MGy per dataset in static and time-resolved synchrotron crystallography experiments at RT. This rough yardstick might change for proteins other than HEWL and at resolutions other than 2 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2022

GaAs Neutron Response Functions and Radiation Damage Metrics

The radiation effects community needs clear, well-documented, neutron energy-dependent responses that can be used in assessing radiation-induced material damage to GaAs semiconductors and for correlating observed radiation-induced changes in the GaAs electronic properties with computed damage metrics. In support of the objective, this document provides: a) a clearly defined set of relevant neutron response functions for use in dosimetry applications; b) clear mathematical expressions for the defined response functions; and c) updated quantitative values for the energy- dependent response functions that reflect the best current nuclear data and modelling. This document recaps the legacy response functions. It then surveys the latest nuclear data and updates the recommended response function to support current GaAs damage studies. A detailed tabulation for six of the energy-dependent response functions is provided in an Appendix.

36 MATERIALS SCIENCE↗
NASA NTRS1989

Radiation damage in scientific charge-coupled devices

Radiation damage is reported on CCDs (charge-coupled devices) that have been primarily exposed to 1.25-MeV gamma rays (Co-60 source). Two important classes of radiation damage are discussed, namely, bulk and ionization effects. Bulk damage or displacement damage is a process in which silicon atoms are displaced from their normal lattice positions by high-energy photons or particles. Single atomic displacements or cluster defect damage is produced, depending on the energy and type of radiation experienced by the detector. Bulk damage creates trapping sites within the CCD's signal channel which in turn degrades charge-transfer efficiency.

Janesick, James↗
NASA NTRS1999

Future Radiation Damage in Space due to South Atlantic Anomaly

Predictions of radiation damage for Low Earth Orbit (LEO) satellites now use semi-empirical models developed from prior satellite data. From these models it is clear that the low field strength of the South Atlantic Anomaly (SAA) controls where the maximum radiation damage occurs. One may make an estimate of future radiation damage to LEO spacecraft if one can predict the future of the SAA. Although reliable maps of the geomagnetic field strength and its secular change have only been made in the last few decades, certain geomagnetic observatories in South America and Africa have recorded the geomagnetic field for a much longer time. These observatories show that the present geomagnetic field change has persisted for more than 100 years. In spite of the fact that a few observatories have shown sudden changes in secular variation, those around the SAA have shown a stable secular variation. Assuming that this will continue for the next 50 to 100 years one can show that the SAA will expand to cover most of the South Atlantic Ocean and will become much weaker. This will greatly intensify the radiation hazard in LEO, put significant new limitations on radiation-hardened hardware, severely restrict the length of time that humans can remain in orbit, and materially change the configuration of the radiation belts.

Heirtzler, J. R.↗
NASA NTRS1980

Space solar cells - High efficiency and radiation damage

The proceedings of the Third Solar Cell High Efficiency and Radiation Damage Meeting are outlined. The topics covered included high efficiency silicon solar cells, silicon solar cell radiation damage, GaAs solar cell performance, and 30 percent conversion devices. The study of radiation damage from a fundamental defect-centered basis is discussed and evaluated as a focus of future work. 18% AM0 efficiency and 0.7 V open-circuit voltages are designated as achievable goals for silicon solar cells, and the potential for 30% AM0 efficiencies from monolithic tandem cell designs without sunlight concentration is noted. In addition to its potential for 20% AM0 efficiencies, the GaAs cell offers the possibility of a radiation-insensitive power supply when operated at temperatures near 200 C.

Brandhorst, H. W., Jr.↗
NASA NTRS1980

Periodic annealing of radiation damage in GaAs solar cells

Continuous annealing of GaAs solar cells is compared with periodic annealing to determine their relative effectiveness in minimizing proton radiation damage. It is concluded that continuous annealing of the cells in space at 150 C can effectively reduce the proton radiation damage to the GaAs solar cells. Periodic annealing is most effective if it can be initiated at relatively low fluences (approximating continuous annealing), especially if low temperatures of less than 200 C are to be used. If annealing is started only after the fluence of the damaging protons has accumulated to a high value 10 to the 11th power sq/pcm), effective annealing is still possible at relatively high temperatures. Finally, since electron radiation damage anneals even more easily than proton radiation damage, substantial improvements in GaAs solar cell life can be achieved by incorporating the proper annealing capabilities in solar panels for practical space missions where both electron and proton radiation damage have to be minimized.

Loo, R. Y.↗
NASA NTRS1985

Radiation damage in high-resistivity silicon solar cells

High-resistivity silicon solar cells exhibit reduced radiation damage when light is incident on the gridded back surface. Under back illumination, radiation damage decreases as cell resistivity increases; under front illumination, radiation damage increases as cell resistivity increases. Thin back-illuminated cells outperform conventional 10 omega cm 50 and 200 micron cells at low 1-MeV electron fluences. However, at higher fluences, the conventional cells exhibit superior radiation resistance. This is attributed to the low BOL diffusion lengths observed in the thin, sack-illuminated cell. These results are discussed in terms of injected charge distributions, electric fields in the cell base, and the effects of a dominant boron-oxygen defect.

Weinberg, I.↗