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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Third-order nonlinearities in molecular hydrogen - Two-photon resonance enhanced third-harmonic generation and Raman scattering

Effects of quantum mechanical interferences on third-order susceptibilities in molecules are studied. First principle calculations for molecular hydrogen are presented and shown to agree with results derived from experimental stimulated Raman gain and spontaneous Raman cross-section data. 10 percent third-harmonic conversion efficiency in H2 at 1 atm without phase matching should require a 150 MW per sq cm at 4.81 microns. As little as 5.9-MW power is sufficient when the beam is properly focused. Resonance Raman scattering (RRS) is proposed for experimentally investigating the interference effects, which tend to reduce the strength of third-order nonlinear susceptibilities.

Pan, C.-L.↗
NASA NTRS1978

Arrhenius' law in turbulent media and an equivalent tunnel effect

The indeterminacy inherent to the formal extension of Arrhenius' law to reactions in turbulent flows is shown to be surmountable in the case of a binary exchange reaction with a sufficiently high activation energy. A preliminary calculation predicts that the turbulent reaction rate is invariant in the Arrhenius form except for an equivalently lowered activation energy. This is a reflection of turbulence-augmented molecular vigor, and causes an appreciable increase in the reaction rate. A similarity to the tunnel effect in quantum mechanics is indicated. The anomaly associated with the mild ignition of oxy-hydrogen mixtures is discussed in this light.

Tsuge, S.↗
NASA NTRS1988

Computed potential energy surfaces for chemical reactions

The minimum energy path for the addition of a hydrogen atom to N2 is characterized in CASSCF/CCI calculations using the (4s3p2d1f/3s2p1d) basis set, with additional single point calculations at the stationary points of the potential energy surface using the (5s4p3d2f/4s3p2d) basis set. These calculations represent the most extensive set of ab initio calculations completed to date, yielding a zero point corrected barrier for HN2 dissociation of approx. 8.5 kcal mol/1. The lifetime of the HN2 species is estimated from the calculated geometries and energetics using both conventional Transition State Theory and a method which utilizes an Eckart barrier to compute one dimensional quantum mechanical tunneling effects. It is concluded that the lifetime of the HN2 species is very short, greatly limiting its role in both termolecular recombination reactions and combustion processes.

Walch, Stephen P.↗
NASA NTRS1993

Finite element analysis of time-independent superconductivity

The development of electromagnetic (EM) finite elements based upon a generalized four-potential variational principle is presented. The use of the four-potential variational principle allows for downstream coupling of EM fields with the thermal, mechanical, and quantum effects exhibited by superconducting materials. The use of variational methods to model an EM system allows for a greater range of applications than just the superconducting problem. The four-potential variational principle can be used to solve a broader range of EM problems than any of the currently available formulations. It also reduces the number of independent variables from six to four while easily dealing with conductor/insulator interfaces. This methodology was applied to a range of EM field problems. Results from all these problems predict EM quantities exceptionally well and are consistent with the expected physical behavior.

Schuler, James J.↗
NASA NTRS2000

Quantum Corrections to the 'Atomistic' MOSFET Simulations

We have introduced in a simple and efficient manner quantum mechanical corrections in our 3D 'atomistic' MOSFET simulator using the density gradient formalism. We have studied in comparison with classical simulations the effect of the quantum mechanical corrections on the simulation of random dopant induced threshold voltage fluctuations, the effect of the single charge trapping on interface states and the effect of the oxide thickness fluctuations in decanano MOSFETs with ultrathin gate oxides. The introduction of quantum corrections enhances the threshold voltage fluctuations but does not affect significantly the amplitude of the random telegraph noise associated with single carrier trapping. The importance of the quantum corrections for proper simulation of oxide thickness fluctuation effects has also been demonstrated.

Asenov, Asen↗
NASA NTRS1999

Quantum Mechanical Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations and Lowering in Sub 0.1 Micron MOSFETs

A detailed study of the influence of quantum effects in the inversion layer on the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs has been performed. This has been achieved using a full 3D implementation of the density gradient (DG) formalism incorporated in our previously published 3D 'atomistic' simulation approach. This results in a consistent, fully 3D, quantum mechanical picture which implies not only the vertical inversion layer quantisation but also the lateral confinement effects manifested by current filamentation in the 'valleys' of the random potential fluctuations. We have shown that the net result of including quantum mechanical effects, while considering statistical fluctuations, is an increase in both threshold voltage fluctuations and lowering.

Asenov, Asen↗
NASA NTRS1985

Physical concepts in the development of constitutive equations

Proposed viscoplastic material models include in their formulation observed material response but do not generally incorporate principles from thermodynamics, statistical mechanics, and quantum mechanics. Numerous hypotheses were made for material response based on first principles. Many of these hypotheses were tested experimentally. The proposed viscoplastic theories and the experimental basis of these hypotheses must be checked against the hypotheses. The physics of thermodynamics, statistical mechanics and quantum mechanics, and the effects of defects, are reviewed for their application to the development of constitutive laws.

Cassenti, B. N.↗
NASA NTRS1971

Basic characteristics of high-frequency Stark-effect modulation of CO2 lasers.

The molecular Stark effect and its application to the modulation of infrared laser radiation have been investigated both theoretically and experimentally. Using a density matrix approach, a quantum mechanical description of the effect of a time-varying electric field on the absorption coefficient and refractive index of a molecular gas near an absorption line has been formulated. For modulation applications a quantity known as the ?modulation depth' is of prime importance. Theoretical expressions for the frequency dependence of the modulation depth show that the response to the frequency of a time-varying Stark field is separated into a nondispersive and a dispersive region, depending on whether the modulating frequency is less than or greater than the homogeneous absorption linewidth. Experimental results showing nondispersive modulation at frequencies to 30 MHz are presented. In addition it is shown that the response of modulation depth to Stark field amplitude is separated into linear and nonlinear regions, the field at which nonlinearities begin being determined by the absorption spectrum of the molecule being used.

Claspy, P. C.↗
NASA NTRS1994

Quantum phase uncertainties in the classical limit

Several sources of phase noise, including spontaneous emission noise and the loss of coherence due to which-path information, are examined in the classical limit of high field intensities. Although the origin of these effects may appear to be quantum-mechanical in nature, it is found that classical analogies for these effects exist in the form of chaos.

Franson, James D.↗
NASA NTRS1987

High temperature transport properties of air

A general computer code was developed to allow calculation of atom-atom and ion-atom transport collision integrals from accurate potential energy curves described by a set of discrete data points for a broad range of scattering conditions. This code is based upon semiclassical approximations that properly account for quantum mechanical behavior such as tunneling effects near a barrier maximum, resonance charge exchange, and nuclear symmetry effects. Transport collision integrals were determined for N-N, O-O, N(+)-N, and O(+)-O interactions from complete sets of accurate potential functions derived from combined experimental and ab initio structure calculations. For the O-O case, this includes results for excited states. The calculated values of the N(+)-N and O(+)-O resonance charge exchange cross section Q(ex) agree well with measurements from beam experiment that are available at high energies where the diffusion cross section Q(d) satisfies Q(d) approximately equal to 2Q(ex).

Levin, E.↗