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All sourcesNASA NTRSDOE OSTI
NASA NTRS1996

Physical Meaning of the Optimum Measurement Process in Quantum Detection Theory

The optimum measurement processes are represented as the optimum detection operators in the quantum detection theory. The error probability by the optimum detection operators goes beyond the standard quantum limit automatically. However the optimum detection operators are given by pure mathematical descriptions. In order to realize a communication system overcoming the standard quantum limit, we try to give the physical meaning of the optimum detection operators.

Osaki, Masao↗
NASA NTRS1987

Innovative methods for the measurement of I* quantum yields and kinetics by diode laser gain-versus-absorption

The quantum yields of a variety of candidate molecules for solar lasant materials to produce I* were tested. The absorption spectrum was measured for each compound and the I* yield determined by the diode laser or by infrared emission, using C3F7I as a standard. The results of these measurements are summarized. A GaAsInP diode laser system was developed to probe I and I* atoms to obtain yields and kinetics. A technique of gain-versus-absorption spectroscopy was investigated to measure quantum yields with high accuracy. The errors in the yield data were reduced to +/- 2% or less. In addition, experiments were set up to measure the rates of F-sublevel changing collisions in both the I ground state and the I* excited state. Finally, experiments and modelling were carried out to explore the possibility of measuring the recombination rates of I* with C3F7 radicals.

Leone, Stephen R.↗
NASA NTRS1992

The ultimate quantum limits on the accuracy of measurements

A quantum generalization of rate-distortion theory from standard communication and information theory is developed for application to determining the ultimate performance limit of measurement systems in physics. For the estimation of a real or a phase parameter, it is shown that the root-mean-square error obtained in a measurement with a single-mode photon level N cannot do better than approximately N exp -1, while approximately exp(-N) may be obtained for multi-mode fields with the same photon level N. Possible ways to achieve the remarkable exponential performance are indicated.

Yuen, Horace P.↗
NASA NTRS1996

Diffusion lengths in irradiated N/P InP-on-Si solar cells

Indium phosphide (InP) solar cells were made on silicon (Si) wafers (InP/Si) by to take advantage of both the radiation-hardness properties of the InP solar cell and the light weight and low cost of Si wafers. The InP/Si cell application is for long duration and/or high radiation orbit space missions. Spire has made N/P InP/Si cells of sizes up to 2 cm by 4 cm with beginning-of-life (BOL) AM0 efficiencies over 13% (one-sun, 28C). These InP/Si cells have higher absolute efficiency and power density after a high radiation dose than gallium arsenide (GaAs) or silicon (Si) solar cells after a fluence of about 2e15 1 MeV electrons/sq. cm. In this work, we investigate the minority carrier (electron) base diffusion lengths in the N/P InP/Si cells. A quantum efficiency model was constructed for a 12% BOL AM0 N/P InP/Si cell which agreed well with the absolutely measured quantum efficiency and the sun-simulator measured AM0 photocurrent (30.1 mA/sq. cm). This model was then used to generate a table of AM0 photocurrents for a range of base diffusion lengths. AM0 photocurrents were then measured for irradiations up to 7.7e16 1 MeV electrons/sq. cm (the 12% BOL cell was 8% after the final irradiation). By comparing the measured photocurrents with the predicted photocurrents, base diffusion lengths were assigned at each fluence level. A damage coefficient K of 4e-8 and a starting (unirradiated) base electron diffusion length of 0.8 microns fits the data well. The quantum efficiency was measured again at the end of the experiment to verify that the photocurrent predicted by the model (25.5 mA/sq. cm) agreed with the simulator-measured photocurrent after irradiation (25.7 mA/sq. cm).

Wojtczuk, Steven↗
NASA NTRS2008

In Situ Irradiation and Measurement of Triple Junction Solar Cells at Low Intensity, Low Temperature (LILT) Conditions

The performance of triple junction InGaP/(In)GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell characterization was carried out in situ at the irradiation temperature while using low intensity illumination, and, as such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements and quantum efficiency measurements. The low temperature irradiations caused substantial degradation that differs in some ways from that seen after room temperature irradiations. The short circuit current degrades more at low temperature while the open circuit voltage degrades more at room temperature. A room temperature anneal after the low temperature irradiation produced a substantial recovery in the degradation. Following irradiation at both temperatures and an extended room temperature anneal, quantum efficiency measurement suggests that the bulk of the remaining damage is in the (In)GaAs sub-cell

Quantum Efficiency↗
NASA NTRS1971

Optimum doping achieves high quantum yields in GaAs photoemitters

Experimental data indicate that optimum doping exists. Measured quantum yield curves indicate optimum overall response is obtained in GaAs emitters with doping in high 10 to the 18th power per cu cm range. Doping for optimum response is not necessarily in this range.

Sonnenberg, H.↗
NASA NTRS1992

Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

Hoenk, Michael E.↗
NASA NTRS1997

Investigation of Photoluminescence and Photocurrent in InGaAsP/InP Strained Multiple Quantum Well Heterostructures

Multiple quantum well InGaAsP/InP p-i-n laser heterostructures with different barrier thicknesses have been investigated using photoluminescence (PL) and photocurrent (PC) measurements. The observed PL spectrum and peak positions are in good agreement with those obtained from transfer matrix calculations. Comparing the measured quantum well PC with calculated carrier escape rates, the photocurrent changes are found to be governed by the temperature dependence of the electron escape time.

Raisky, O. Y.↗
NASA NTRS1994

Decoherence and dissipation for a quantum system coupled to a local environment

Decoherence and dissipation in quantum systems has been studied extensively in the context of Quantum Brownian Motion. Effective decoherence in coarse grained quantum systems has been a central issue in recent efforts by Zurek and by Hartle and Gell-Mann to address the Quantum Measurement Problem. Although these models can yield very general classical phenomenology, they are incapable of reproducing relevant characteristics expected of a local environment on a quantum system, such as the characteristic dependence of decoherence on environment spatial correlations. I discuss the characteristics of Quantum Brownian Motion in a local environment by examining aspects of first principle calculations and by the construction of phenomenological models. Effective quantum Langevin equations and master equations are presented in a variety of representations. Comparisons are made with standard results such as the Caldeira-Leggett master equation.

Gallis, Michael R.↗
NASA NTRS1973

Correlation and prediction of gaseous diffusion coefficients.

A new correlation method for binary gaseous diffusion coefficients from very low temperatures to 10,000 K is proposed based on an extended principle of corresponding states, and having greater range and accuracy than previous correlations. There are two correlation parameters that are related to other physical quantities and that are predictable in the absence of diffusion measurements. Quantum effects and composition dependence are included, but high-pressure effects are not. The results are directly applicable to multicomponent mixtures.

Marrero, T. R.↗
NASA NTRS1973

Processing and transmission of information

Techniques, useful in transmitting and processing information, are discussed. In particular, restrictions of the law of conservation of energy on allowable forms of interaction Hamiltonians and optimum quantum measurement by extension of Hilbert space technique are discussed.

Source record↗
NASA NTRS1979

Optical communication with two-photon coherent states. II - Photoemissive detection and structured receiver performance

In a previous paper (1978), the authors developed a method of analyzing the performance of two-photon coherent state (TCS) systems for free-space optical communications. General theorems permitting application of classical point process results to detection and estimation of signals in arbitrary quantum states were derived. The present paper examines the general problem of photoemissive detection statistics. On the basis of the photocounting theory of Kelley and Kleiner (1964) it is shown that for arbitrary pure state illumination, the resulting photocurrent is in general a self-exciting point process. The photocount statistics for first-order coherent fields reduce to those of a special class of Markov birth processes, which the authors term single-mode birth processes. These general results are applied to the structure of TCS radiation, and it is shown that the use of TCS radiation with direct or heterodyne detection results in minimal performance increments over comparable coherent-state systems. However, significant performance advantages are offered by use of TCS radiation with homodyne detection. The abstract quantum descriptions of homodyne and heterodyne detection are derived and a synthesis procedure for obtaining quantum measurements described by arbitrary TCS is given.

Shapiro, J. H.↗
NASA NTRS1994

Third International Workshop on Squeezed States and Uncertainty Relations

The purpose of these workshops is to bring together an international selection of scientists to discuss the latest developments in Squeezed States in various branches of physics, and in the understanding of the foundations of quantum mechanics. At the third workshop, special attention was given to the influence that quantum optics is having on our understanding of quantum measurement theory. The fourth meeting in this series will be held in the People's Republic of China.

Han, D.↗