Absolute quantum efficiencies of phosphor CaWO4-Pb
Absolute quantum efficiency of phosphor calcium tungstate-lead under monochromatic far UV illumination
Bruner, E. C., Jr.↗
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Photosensor with enhanced quantum efficiency
A method to significantly increase the quantum efficiency (QE) of a CCD (or similar photosensor) applied in the UV, far UV and low energy x-ray regions of the spectrum. The increase in QE is accomplished by overthinning the backside of a CCD substrate beyond the epitaxial interface and UV flooding the sensor prior to use. The UV light photoemits electrons to the thinned surface and charges the backside negatively. This in turn forms an accumulation layer of holes near the Si-SiO.sub.2 interface creating an electric field gradient in the silicon which directs the photogenerated signal to the frontside where they are collected in pixel locations and later transferred. An oxide film, in which the backside charge resides, must have quality equivalent to a well aged native oxide which typically takes several years to form under ambient conditions. To reduce the amount of time in growing an oxide of sufficient quality, a process has been developed to grow an oxide by using deionized steam at 95.degree. C. which takes less than one hour to grow.
Janesick, James R.↗
OP09O-OP404-9 Wide Field Camera 3 CCD Quantum Efficiency Hysteresis
The HST/Wide Field Camera (WFC) 3 UV/visible channel CCD detectors have exhibited an unanticipated quantum efficiency hysteresis (QEH) behavior. At the nominal operating temperature of -83C, the QEH feature contrast was typically 0.1-0.2% or less. The behavior was replicated using flight spare detectors. A visible light flat-field (540nm) with a several times full-well signal level can pin the detectors at both optical (600nm) and near-UV (230nm) wavelengths, suppressing the QEH behavior. We are characterizing the timescale for the detectors to become unpinned and developing a protocol for flashing the WFC3 CCDs with the instrument's internal calibration system in flight. The HST/Wide Field Camera 3 UV/visible channel CCD detectors have exhibited an unanticipated quantum efficiency hysteresis (QEH) behavior. The first observed manifestation of QEH was the presence in a small percentage of flat-field images of a bowtie-shaped contrast that spanned the width of each chip. At the nominal operating temperature of -83C, the contrast observed for this feature was typically 0.1-0.2% or less, though at warmer temperatures contrasts up to 5% (at -50C) have been observed. The bowtie morphology was replicated using flight spare detectors in tests at the GSFC Detector Characterization Laboratory by power cycling the detector while cold. Continued investigation revealed that a clearly-related global QE suppression at the approximately 5% level can be produced by cooling the detector in the dark; subsequent flat-field exposures at a constant illumination show asymptotically increasing response. This QE "pinning" can be achieved with a single high signal flat-field or a series of lower signal flats; a visible light (500-580nm) flat-field with a signal level of several hundred thousand electrons per pixel is sufficient for QE pinning at both optical (600nm) and near-UV (230nm) wavelengths. We are characterizing the timescale for the detectors to become unpinned and developing a protocol for flashing the WFC3 CCDs with the instrument's internal calibration system in flight. A preliminary estimate of the decay timescale for one detector is that a drop of 0.1-0.2% occurs over a ten day period, indicating that relatively infrequent cal lamp exposures can mitigate the behavior to extremely low levels.
Collins, Nick↗
Enhanced quantum efficiency from optical interference in alkali antimonide photocathodes: Modeling and experimental results
We present measurements of enhanced quantum efficiency (QE) in thin film alkali antimonide photocathodes from optical interference in the cathode-substrate multilayer. Modulations in the spectral response are observed over a range of visible wavelengths and are shown to increase the QE by more than a factor of two at specific wavelengths. We present a model describing the QE modulations based on the three step photoemission process incorporating cases of both constant density of states and density functional theory-derived density of states and show that the calculated results are in good agreement with the measurements. Model predictions demonstrate that QE can be enhanced by more than a factor of 5 by optimization of cathode and substrate layer thicknesses. Additionally, these calculations reveal that optical interference can yield higher quantum efficiencies in thin films compared to thick, optically dense films. We model the QE vs excitation wavelength of multiple alkali antimonide compounds at different thicknesses. We then discuss the advantages of this interference effect for electron accelerators.
73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
Optical devices to increase photocathode quantum efficiency
Optical devices for enhancement of semitransparent photocathode quantum efficiency applied to TV camera tubes, image intensifiers and other imaging detectors
Grant, G. R.↗
Quantum efficiencies of imaging detectors with alkali halide photocathodes. I - Microchannel plates with separate and integral CsI photocathodes
Measurements and comparisons have been made of the quantum efficiencies of microchannel plate (MCP) detectors in the far-UV (below 2000-A) wavelength range using CsI photocathodes (a) deposited on the front surfaces of microchannel plates and (b) deposited on solid substrates as opaque photocathodes with the resulting photoelectrons input to microchannel plates. The efficiences were measured in both pulse-counting and photodiode modes of operation. Typical efficiencies are about 15 percent at 1216 A for a CsI-coated MCP compared with 65 percent for an opaque CsI photocathode MCP detector. Special processing has yielded an efficiency as high as 20 percent for a CsI-coated MCP. This may possibly be further improved by optimization of the tilt angle of the MCP channels relative to the front face of the MCP and incident radiation. However, at present there still remains a factor of at least 3 quantum efficiency advantage in the separate opaque CsI photocathode configuration.
Carruthers, George R.↗
How to squeeze high quantum efficiency and high time resolution out of a SPAD
We address the issue whether Single-Photon Avalanche Diodes (SPADs) can be suitably designed to achieve a trade-off between quantum efficiency and time resolution performance. We briefly recall the physical mechanisms setting the time resolution of avalanche photodiodes operated in single-photon counting, and we give some criteria for the design of SPADs with a quantum efficiency better than l0 percent at 1064 nm together with a time resolution below 50 ps rms.
Lacaita, A.↗
Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency
Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.
Hoenk, Michael E.↗
Stable, high quantum efficiency silicon photodiodes for vacuum-UV applications
Silicon photodiodes have been developed by defect-free phosphorus diffusion having practically no carrier recombination at the SiSiO2 interface or in the front diffused region. The quantum efficiency of these photodiodes was found to be around 120 percent at 100 nm. Unlike the previously tested silicon photodiodes, the developed photodiodes exhibit extremely stable quantum efficiency over extended periods of time. The possibility of using these photodiodes as vacuum ultraviolet detector standards is being currently investigated.
Korde, Raj↗
Unexpected origin of the quantum efficiency reduction in long-wavelength (In,Ga)N light-emitting diodes
Differential carrier lifetime (DCL) measurements were performed on c-plane In 𝑥 Ga 1−𝑥 N/GaN single-quantum-well (QW) light-emitting diodes (LEDs) with varying indium-content QWs (x = 13.5%, 16%, 22%), emitting with violet, blue, and green wavelengths. The recombination lifetimes of LEDs were found to increase with increasing indium composition, resulting in increased carrier densities n measured by DCL. Extraction of the A coefficients, which are assumed to not vary with n, and of the effective B(n) and C(n) coefficients of the ABC model of the internal quantum efficiency (IQE) of QWs showed no significant changes in the A coefficient with increasing indium content [In] in the In 𝑥 Ga 1−𝑥 N QW, and a reduction in the B(n) and C(n) coefficients with increasing [In]. When looking at the Shockley-Read-Hall (SRH) recombination rate An, the radiative recombination rate B(n)𝑛 2 , and the Auger-Meitner (AM) recombination rate C(n)𝑛 3 , we observed that at any given n, the SRH rate is the same for the three [In] measured, while the radiative rate decreases (by up to approximately 9 times) and the AM rate decreases (by up to approximately 7 times) with increasing indium content. This shows that the larger reduction in radiative recombination rates relative to nonradiative recombination rates with increasing [In] is the largest contributor to the decreased quantum efficiencies of LEDs (the “green gap”) at any given n. While some of the reduction in the effective recombination coefficients B(n) and C(n) can be explained by the reduced wave-function overlaps of the QW with increasing indium content, the larger reduction of B(n) relative to C(n) motivates further study of the intrinsic recombination coefficients 𝐵 0 and 𝐶 0 of bulk In 𝑥 Ga 1−𝑥 N alloys and how they are related to the effective recombination coefficients B(n) and C(n) in QWs. The relative contributions of nonradiative recombination are enhanced at any given current density due to the sublinear relationship between the carrier density n and the current density. Thus, the solution to the green gap, up to any intrinsic limitations set by the indium content of the QW, from an IQE perspective, requires the design of long-wavelength (In,Ga)N LEDs with improved wave-function overlaps that can operate with a lower carrier density at any given current density.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Resonant infrared detector with substantially unit quantum efficiency
A resonant infrared detector includes an infrared-active layer which has first and second parallel faces and which absorbs radiation of a given wavelength. The detector also includes a first tuned reflective layer, disposed opposite the first face of the infrared-active layer, which reflects a specific portion of the radiation incident thereon and allows a specific portion of the incident radiation at the given wavelength to reach the infrared-active layer. A second reflective layer, disposed opposite the second face of the infrared-active layer, reflects back into the infrared-active layer substantially all of the radiation at the given wavelength which passes through the infrared-active layer. The reflective layers have the effect of increasing the quantum efficiency of the infrared detector relative to the quantum efficiency of the infrared-active layer alone.
Farhoomand, Jam↗
Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping
A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 °C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices ((CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.
Nikzad, Shouleh↗
Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping
A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450 (deg)C for compatibility with Al-metallized devices. Imaging with MBE-modified 1kx1k charge coupled devices (CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5 nm silicon cap layer.
charged coupled devices (CCDs)↗
Effects of a high-energy particle environment on the quantum efficiency of spectrally selective photocathodes for the middle and vacuum ultraviolet
Quantum efficiencies of spectrally selective photocathodes for ultraviolet
Heath, D. F.↗
Quantum efficiencies greater than 50 percent from commercially available photomultipliers
Photomultiplier tubes high quantum efficiency attainment by optical enhancement techniques
Grant, G. R.↗
Fluorescence quantum efficiencies of octa- coordinated europium homogeneous and mixed chelates in organic solvents.
Fluorescence quantum efficiencies of octa- coordinated europium homogeneous and mixed chelates in organic solvents, noting effect of oxygen removal
CHEMICAL LASER↗
Effects of drift fields and field gradients on the quantum efficiency of photocells.
Drift field, field gradient and diffused impurity effects on minority carriers and quantum efficiency in silicon photocells
DRIFT↗
Effect of activation temperature on quantum efficiency and lifetime of NEA truncated nanocone array GaAs photocathode
This study investigates the quantum efficiency (QE) and operational lifetime of a negative electron affinity GaAs truncated nanocone array (TNCA) photocathode benchmarked against a conventional flat GaAs photocathode under varying activation temperatures. The TNCA structure demonstrated a QE of up to 13.6% at 590 nm with room temperature (RT) activation—approximately 1.5 times higher than its flat counterpart. This enhancement is due to Mie resonance effects within the nanostructure, as confirmed by finite-difference time-domain simulations. Moreover, the TNCA photocathode exhibits significantly extended charge lifetime, with enhancement factors of ∼6.1 and ∼19.8 under RT and 50 °C activations, respectively. These gains are primarily attributed to increased effective surface area and optimized dipole layer formation at elevated temperatures. In addition, shorter excitation wavelengths further contribute to lifetime improvements. These findings underscore the TNCA GaAs photocathode’s potential as a high QE, long lifetime electron source for many large-scale electron accelerators.
Cs-NF3 activation↗