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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Dimensional crossover in spin Hall oscillators

Auto-oscillations of magnetization driven by direct spin current have been previously observed in multiple quasi-zero-dimensional (0D) ferromagnetic systems such as nanomagnets and nanocontacts. Recently, it was shown that pure spin Hall current can excite coherent auto-oscillatory dynamics in quasi-one-dimensional (1D) ferromagnetic nanowires but not in quasi-two-dimensional (2D) ferromagnetic films. Here we study the 1D to 2D dimensional crossover of current-driven magnetization dynamics in wire-based Pt/Ni 80 Fe 20 bilayer spin Hall oscillators via varying the wire width. We find that increasing the wire width results in an increase of the number of excited auto-oscillatory modes accompanied by a decrease of the amplitude and coherence of each mode. We also observe a crossover from a hard to a soft onset of the auto-oscillations with increasing wire width. The amplitude of auto-oscillations rapidly decreases with increasing temperature suggesting that interactions of the phase-coherent auto-oscillatory modes with incoherent thermal magnons play an important role in suppression of the auto-oscillatory dynamics. Our measurements in this work set the upper limit on the dimensions of an individual spin Hall oscillator and elucidate the mechanisms leading to suppression of coherent auto-oscillations with increasing oscillator size.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

The Cosmological Bootstrap: Spinning correlators from symmetries and factorization

We extend the cosmological bootstrap to correlators involving massless spinning particles, focusing on spin-1 and spin-2. In de Sitter space, these correlators are constrained both by symmetries and by locality. In particular, the de Sitter isometries become conformal symmetries on the future boundary of the spacetime, which are reflected in a set of Ward identities that the boundary correlators must satisfy. We solve these Ward identities by acting with weight-shifting operators on scalar seed solutions. Using this weight-shifting approach, we derive three- and four-point correlators of massless spin-1 and spin-2 fields with conformally coupled scalars. Four-point functions arising from tree-level exchange are singular in particular kinematic configurations, and the coefficients of these singularities satisfy certain factorization properties. We show that in many cases these factorization limits fix the structure of the correlators uniquely, without having to solve the conformal Ward identities. The additional constraint of locality for massless spinning particles manifests itself as current conservation on the boundary. We find that the four-point functions only satisfy current conservation if the s, t, and u-channels are related to each other, leading to nontrivial constraints on the couplings between the conserved currents and other operators in the theory. For spin-1 currents this implies charge conservation, while for spin-2 currents we recover the equivalence principle from a purely boundary perspective. For multiple spin-1 fields, we recover the structure of Yang--Mills theory. Finally, we apply our methods to slow-roll inflation and derive a few phenomenologically relevant scalar-tensor three-point functions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Entanglement Benchmarking in Quantum Simulations of Spin Systems

We simulate quantum spin systems and measure entanglement using circuits tailored for near-term quantum computers. Traditional tools like entanglement entropy are limited to pure states and require full state tomography, making them impractical on current hardware. Instead, we employ the novel approach, Positive Partial Transpose (PPT) criterion to efficiently detect pairwise entanglement from two-spin reduced density matrices, applicable to both pure and mixed states. This method enables scalable entanglement detection, providing a practical route to study quantum correlations, phase transitions, and benchmark quantum devices.

Baul, Anshumitra [ORNL] (ORCID:0000000268947191)↗
DOE OSTI2020

Topological orders of monopoles and hedgehogs: From electronic and magnetic spin-orbit coupling to quarks

Topological states of matter are, generally, quantum liquids of conserved topological defects. We establish this by constructing and analyzing topological field theories which introduce gauge fields to describe the dynamics of singularities in the original field configurations. In this work, homotopy groups are utilized to identify topologically protected singularities, and the conservation of their protected number is captured by a topological action term that unambiguously obtains from the given set of symmetries. Stable phases of these theories include quantum liquids with emergent massless Abelian and non-Abelian gauge fields, as well as topological orders with long-range quantum entanglement, fractional excitations, boundary modes, and unconventional responses to external perturbations. This paper focuses on the derivation of topological field theories and basic phenomenological characterization of topological orders associated with homotopy groups π n (S n ), n ≥ 1 . These homotopies govern monopole and hedgehog topological defects in d = n + 1 dimensions, and enable the generalization of both weakly interacting and fractional quantum Hall liquids of vortices to d > 2 . Hedgehogs have not been in the spotlight so far, but they are particularly important defects of magnetic moments because they can be stimulated in realistic systems with spin-orbit coupling, such as chiral magnets and d = 3 topological materials. We predict topological orders in systems with U(1) × Spin(d) symmetry in which fractional electric charge attaches to hedgehogs. Monopoles, the analogous defects of charge or generic U(1) currents, may bind to hedgehogs via Zeeman effect, or effectively emerge in purely magnetic systems. The latter can lead to spin liquids with different topological orders than that of the resonant valence bond spin liquid. Charge fractionalization of quarks in atomic nuclei is also seen as possibly arising from the charge-hedgehog attachment.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Progress toward picosecond on-chip magnetic memory

Here, we offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ~3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ~6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.

42 ENGINEERING↗
DOE OSTI2023

Spin-Orbit Interactions in Transdimensional Heterostructures (Final Technical Report)

A summary of the theory development for the fundamental understanding of intrinsic electronic processes and interactions in transdimensional heterostructures. The transdimensional regime lays in between three (3D) and two (2D) dimensions. Current research has been largely focused on purely 2D or conventional 3D materials, being guided by a traditional view that only the dimensionality and the chemical composition are important to control the physical properties of quantum materials. The transitional, transdimensional regime has been largely overlooked. The theoretical and experimental results reported herewith fill in this gap by providing the missing aspects of the spin-orbit interaction theory and the associated magneto-optical response for ultrathin films of metals and semiconductors in the transdimensional regime.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Manipulating electron redistribution to achieve electronic pyroelectricity in molecular [FeCo] crystals

Pyroelectricity plays a crucial role in modern sensors and energy conversion devices. However, obtaining materials with large and nearly constant pyroelectric coefficients over a wide temperature range for practical uses remains a formidable challenge. Attempting to discover a solution to this obstacle, we combined molecular design of labile electronic structure with the crystal engineering of the molecular orientation in lattice. This combination results in electronic pyroelectricity of purely molecular origin. Here, we report a polar crystal of an [FeCo] dinuclear complex exhibiting a peculiar pyroelectric behavior (a substantial sharp pyroelectric current peak and an unusual continuous pyroelectric current at higher temperatures) which is caused by a combination of Fe spin crossover (SCO) and electron transfer between the high-spin Fe ion and redox-active ligand, namely valence tautomerism (VT). As a result, temperature dependence of the pyroelectric behavior reported here is opposite from conventional ferroelectrics and originates from a transition between three distinct electronic structures. The obtained pyroelectric coefficient is comparable to that of polyvinylidene difluoride at room temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Voltage-Controlled Magnetic Reversal in Orbital Chern Insulators

Chern insulator ferromagnets are characterized by a quantized anomalous Hall effect and have so far been identified experimentally in magnetically doped topological insulator thin films and in bilayer graphene moiré superlattices. We classify Chern insulator ferromagnets as either spin or orbital, depending on whether the orbital magnetization results from spontaneous spin polarization combined with spin-orbit interactions, as in the magnetically doped topological insulator case, or directly from spontaneous orbital currents, as in the moiré superlattice case. We argue that, in a given magnetic state, characterized, for example, by the sign of the anomalous Hall effect, the magnetization of an orbital Chern insulator will often have opposite signs for weak n and weak p electrostatic or chemical doping. Finally, this property enables pure electrical switching of a magnetic state in the presence of a fixed magnetic field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Strontium Tris(cyclopentadienyl) Complexes: Isostructural f0/d0 Analogues of Divalent Lanthanides

Isostructural, diamagnetic diluents are commonly used in magnetic investigations to eliminate interactions between neighboring electron spins. For divalent lanthanides, these diluents are currently limited to closed-shell ytterbium(II) complexes; ytterbium(II), however, is a poor size-match for the large early- and mid-lanthanides, precluding access to certain ligand frameworks. To aid in the study of lanthanide(II) complexes with unconventional electronic structures and magnetic properties, three strontium tris-cyclopentadienyl complexes, [K(2.2.2-cryptand)][SrCpR3], with common substituted cyclopentadienyl ligands, CpR = C5Me4H (Cptet), C5H4(SiMe3) (Cp'), and C5H3(SiMe3)2 (Cp″) were synthesized, characterized, and examined as diamagnetic diluents. En route to their synthesis, two new Sr metallocenes, [SrCpR2] CpR = Cptet, Cp', were also prepared. [K(2.2.2-cryptand)][SrCptet3] was used to dilute the new complex [K(2.2.2-cryptand)][EuIICptet3], and the EPR spectra of the diluted material shows narrower linewidths than those of pure [K(2.2.2-cryptand)][EuIICptet3], suggesting an increase in the spin-spin relaxation time that enables determination of the europium hyperfine coupling constant.

Zlotnikov, Samuel B↗
DOE OSTI2020

Dynamic Nuclear Spin Polarization Induced by the Edelstein Effect at Bi(111) Surfaces

Nuclear spin polarization induced by hyperfine interaction and mainly the Edelstein effect due to strong spin-orbit interaction, is investigated by quantum transport in Bi(111) thin film samples. The Bi(111) films are deposited on mica by van der Waals epitaxial growth. The Bi(111) films show micrometer-sized triangular islands with 0.39 nm step height, corresponding to the Bi(111) bilayer height. At low temperatures a high current density is applied to generate a nonequilibrium carrier spin polarization by mainly the Edelstein effect at the Bi(111) surface, which then induces dynamic nuclear polarization by hyperfine interaction. Here, comparative quantum magnetotransport antilocalization measurements indicate a suppression of antilocalization by the in-plane Overhauser field from the nuclear polarization and allow a quantification of the Overhauser field. Hence nuclear polarization was both achieved and quantified by a purely electronic transport-based approach.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Two-step spin-coating of vacancy-ordered double perovskites enables growth of thin films for electronic devices

Vacancy-ordered double perovskites (VODPs), such as Cs 2 TeX 6 (X = Cl, Br, I), are lead-free alternatives to conventional metal-halide perovskites (MHPs). One limitation of VODPs is the lack of processes to form thin films relevant for physical characterization and electronic devices. A two-step spin-coating method was developed for synthesizing high-quality films of Cs 2 TeBr 6 . Independently depositing CsBr and TeBr 4 enables high precursor concentrations and control over crystallization kinetics. By optimizing the spin-coating parameters, conversion of precursors to phase pure films was observed using structural and surface characterization methods. The growth of mixed-halide systems was investigated using alternative salts including CsCl and CsI. The formation of halide alloys was found to depend on the existence of routes to byproducts. Lastly, single carrier diodes of Cs2TeBr6 were designed following valence band characterization with photoelectron spectroscopy. Temperature-dependent space-charge-limited current measurements revealed that transport occurs by hopping and the hole mobility is 3.2 × 10 −5 cm 2 V −1 s −1 near room temperature. As a result, the insights from the 2-step procedure provide a pathway towards making semiconducting devices from VODPs.

Kuklinski, Owen [University of California, Santa B↗
DOE OSTI2024

Critical enhancement of the spin Hall effect by spin fluctuations

The spin Hall (SH) effect, the conversion of the electric current to the spin current along the transverse direction, relies on the relativistic spin-orbit coupling (SOC). Here, we develop a microscopic theory on the mechanisms of the SH effect in magnetic metals, where itinerant electrons are coupled with localized magnetic moments via the Hund exchange interaction and the SOC. Both antiferromagnetic metals and ferromagnetic metals are considered. It is shown that the SH conductivity can be significantly enhanced by the spin fluctuation when approaching the magnetic transition temperature of both cases. For antiferromagnetic metals, the pure SH effect appears in the entire temperature range, while for ferromagnetic metals, the pure SH effect is expected to be replaced by the anomalous Hall effect below the transition temperature. We discuss possible experimental realizations and the effect of the quantum criticality when the antiferromagnetic transition temperature is tuned to zero temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Direct imaging of electrical switching of antiferromagnetic Néel order in α-Fe 2 O 3 epitaxial films

In this work, we report the direct observation of switching of the Néel vector of antiferromagnetic (AFM) domains in response to electrical pulses in micron-scale Pt/α-Fe 2 O 3 Hall bars using photoemission electron microscopy. Current pulses lead to reversible and repeatable switching with the current direction determining the final state, consistent with Hall effect experiments that probe only the spatially averaged response. Current pulses also produce irreversible changes in domain structure, in and even outside the current path. In both cases only a fraction of the domains switch in response to pulses. Furthermore, the analysis of images taken with different x-ray polarizations shows that the AFM Néel order has an out-of-plane component in equilibrium that is important to consider in analyzing the switching data. These results show that—in addition to effects associated with spin-orbit torques from the Pt layer, which can produce reversible switching—changes in AFM order can be induced by purely thermal effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Understanding Topological Pseudospin Transport in Van Der Waals' Materials

Because of symmetry, crystals often have degenerate valleys in the conduction or the valence band. This “valley” degree of freedom, similar to electronic charge and spin, has been proposed as an information carrier for new classes of electronic and optoelectronic devices. The basic requirement of information processing is to be able to create and manipulate a flow of valley pseudospin, i.e. valley pseudospin current. Valley pseudospin currents have been demonstrated in recent experiments in monolayer molybdenum disulfide and graphene on hexagonal boron nitride. However, the key fundamental questions regarding the nature of valley pseudospin transport remain open. This project will investigate the importance of Berry curvature effects in valley pseudospin transport and explore regimes for quantized valley Hall conductivity and pure valley pseudospin currents. The study will rely on combined optical and electrical transport techniques to create, manipulate and detect valley pseudospin currents in two-dimensional (2D) van der Waals’ materials of hexagonal structure. The insights provided by this research will deepen the understanding of valley pseudospin transport in 2D and help the development of novel valley-based technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Revealing the Transient Formation Dynamics and Optoelectronic Properties of 2D Ruddlesden–Popper Phases on 3D Perovskites

Using in situ photoluminescence measurements during the spin-coating and annealing steps, this study probes the formation of 2D layers on 3D triple cation perovskite films comparing phenylethylammonium and 2-thiophenemethylammonium iodide bulky cations. This study elucidates the formation mechanisms of the surface layers for both cases and reveals two regimes during 2D layer formation: a kinetic-driven and a thermodynamic-driven process. These driving forces result in different compositions of the 2D/3D interface for each treatment, namely, different ratios of pure 2D (n = 1) and quasi-2D (n > 1) structures. Further, this study shows that a higher ratio of quasi-2D phases is more beneficial for device performance, as pure-2D layers may hamper current extraction. Due to a more evenly distributed formation energy profile among 2D and quasi-2D phases, highly concentrated 2-thiophenemethylammonium iodide appears to be more suited for effective surface passivation than its phenylethylammonium analog.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Digital-analog quantum computation

Digital quantum computing paradigm offers highly desirable features such as universality, scalability, and quantum error correction. However, physical resource requirements to implement useful error-corrected quantum algorithms are prohibitive in the current era of NISQ devices. As an alternative path to performing universal quantum computation, within the NISQ era limitations, we propose to merge digital single-qubit operations with analog multiqubit entangling blocks in an approach we call digital-analog quantum computing (DAQC). Along these lines, although the techniques may be extended to any resource, we propose to use unitaries generated by the ubiquitous Ising Hamiltonian for the analog entangling block and we prove its universal character. Here, we construct explicit DAQC protocols for efficient simulations of arbitrary inhomogeneous Ising, two-body, and M-body spin Hamiltonian dynamics by means of single-qubit gates and a fixed homogeneous Ising Hamiltonian. Additionally, we compare a sequential approach where the interactions are switched on and off (stepwise DAQC) with an always-on multiqubit interaction interspersed by fast single-qubit pulses (banged DAQC). Finally, we perform numerical tests comparing purely digital schemes with DAQC protocols, showing a remarkably better performance of the latter. The proposed DAQC approach combines the robustness of analog quantum computing with the flexibility of digital methods.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

Influence of Nb alloying on Nb recrystallization and the upper critical field of Nb 3 ⁢Sn

Nb 3 Sn conductors are important candidates for high-field magnets for particle accelerators, and they continue to be widely used for many laboratory and NMR magnets. However, the critical current density, J c , of present Nb 3 Sn conductors declines swiftly above 12-15 T. State-of-the-art Ta- and Ti-doped strands exhibit upper critical field, H c2 , values of ~ 24-26.5 T (4.2 K) and do not reach the FCC target J c , which serves as the present stretch target for Nb 3 Sn development. As recently demonstrated, to meet this goal requires enhanced vortex pinning but an independent and supplementary approach is to significantly enhance H c2 . In this study, we have arc-melted multiple Nb alloys with added Hf, Zr, Ta and Ti and drawn them successfully into monofilament wires to investigate the possibilities of H c2 enhancement through alloying. H c2 (T) was measured for all samples in fields up to 16 T and some up to 31 T. We have found that all alloys show good agreement with the standard Werthamer, Helfand, and Hohenberg (WHH) fitting procedure without the need to adjust the paramagnetic limitation parameter (α) and spin-orbit scattering parameter (λ so ). The evaluation of dH c2 /dT near T c , which is proportional to the electronic specific heat coefficient γ and the normal state resistivity ρn, allows a better understanding of the induced disorder introduced by alloying in the A15 phase. So far, we have observed that Hf alloying of pure Nb can enhance H c2 (0) by 3-4 T to ~28 T, while adding just 1 at. %Hf or Zr into a Nb4Ta base alloy can raise H c2 (0) to ~31 T. Very importantly we find that Hf and Zr raise the alloy recrystallization temperature above the usual A15 reaction temperature range of 650°C – 750°C, thus ensuring denser A15 phase nucleation in the Nb alloy grain boundaries, possibly leading to a more homogeneous A15 phase Sn content and refined A15 grain size. Furthermore, the potential for further advancements in Nb 3 Sn properties is explored in relation to the recrystallization of the Nb alloy and the factors controlling the upper critical field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗