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At least 37 records · Page 2

Waveguides in Thin Film Polymeric Materials

Results on the fabrication of integrated optical components in polymeric materials using photo printing methods will be presented. Optical waveguides were fabricated by spin coating preoxidized silicon wafers with organic dye/polymer solution followed by soft baking. The waveguide modes were studied using prism coupling technique. Propagation losses were measured by collecting light scattered from the trace of a propagation mode by either scanning photodetector or CCD camera. We observed the formation of graded index waveguides in photosensitive polyimides after exposure of UV light from a mercury arc lamp. By using a theoretical model, an index profile was reconstructed which is in agreement with the profile reconstructed by the Wentzel-Kramers-Brillouin calculation technique using a modal spectrum of the waveguides. Proposed mechanism for the formation of the graded index includes photocrosslinking followed by UV curing accompanied with optical absorption increase. We also developed the prototype of a novel single-arm double-mode interferometric sensor based on our waveguides. It demonstrates high sensitivity to the chance of ambient temperature. The device can find possible applications in aeropropulsion control systems.

Sakisov, Sergey↗

Coherent Wavelength Switched Co-Packaged Optics to Disrupt Datacenters/HPC (AKA "QRock") (Final Report)

This project resulted in multiple first-of-a-kind demonstrations, including two generations of transmitters, a receiver, and a complete coherent link. The transmitter architecture, based on EAMs to generate QPSK modulation was first demonstrated in InP, which has limitations for scaling up to chips with multiple channels for full WDM architectures, and implementing the densities and level of integration needed to implement co-packaging with electronics. Our work resulted in the first demonstration of this architecture on a Si platform compatible with copackaging, and our working prototypes illustrated the potential of the approach. The link demonstration was also the first coherent optical link realized in a multi-micron waveguide platform. For the transmitters, integrating efficient III-V EAM devices into the large waveguide Si platform simultaneously enables significant reduction in driver power consumption while minimizing optical losses in routing and fiber coupling. On the receiver side, optical coupling and propagation losses are also minimized in the multi-micron platform, reducing required laser optical power which improves link energy efficiency. The measurement results presented in the final report demonstrate that we achieved the speed objectives for the program (112Gb/s: 56Gbaud QPSK), albeit at a higher BER than targeted. The report provides assessments of the low-powercoherent link architecture and associated components developed under the program from both technological and commercial viewpoints.

97 MATHEMATICS AND COMPUTING↗

Integrated optical components in thin films of polymers

The results will be reported on the study of integrated optical components based on nonlinear optical polymeric films. Polymers poly(methyl methacrylate) (PMMA) and polyimide (PI) doped with organic laser dyes 4-dicyanomethylene-2-methyl-6-p dimethylaminostyryl-4H pyran (DCM) and 1, 3, 5, 7, 8 - pentamethyl-2,6 -diethyl-pyrromethene -BF2-complex (Pyrommethene 567, PM-567) were selected as materials for light guiding films. Additionally, UV polymerized polydiacetylene (PDA) on glass substrate was used as a waveguide material. Optical waveguides were fabricated using spin coating of preoxidized silicon wafers (1.5 micrometer silicon oxide layer) with organic dye/polymer solution followed by soft baking. the modes in slab waveguides were studied using prism coupling techniques. Measured values of mode coupling angles in multimode waveguides were used to calculate film thickness and refractive index for different polarizations. Refractive index anisotropy was found in PDA waveguide. The optimal conditions of spin coating for single mode waveguide fabrication were estimated. Propagation losses were measured by collecting the light scattered from the trace of a propagating mode either by scanning photo detector or by CCD camera. Different types of light coupling techniques were used including end-dire coupling, prism and grating coupling. Mechanical printing technique was developed for coupling grating fabrication resulting in gratings with 4% diffraction efficiency. The gratings demonstrated good stability with diffraction efficiency relaxation rate 2.4 dB/hour at a temperature approximately 15-20 C below glass transition point. Dye doped waveguides were transversally pumped with frequency doubled Nd:YAG Q-switched laser producing intensive light emission with apparent 6 kW/sq cm pump threshold and spectrum narrowing near 617 nm peak in the case of DCM doped waveguide. PM-567 doped waveguide pumped with CW Ar(+) laser (514 nm wavelength) far below threshold (0.1 W/sq.cm pump power) demonstrated emission spectrum narrowing near 616 nm peak with 18% power conversion slope efficiency. In this case emission spectrum modification was caused by the enhanced light absorption along the direction of propagating waveguide modes. Changing length, thickness, and other morphlogical waveguide parameters one can modify emission spectrum in predictable direction. The results show that polymeric waveguides, especially based on high temperature polymers such as Pl, can be used to produce a varietiy of active and passive silicon compatible integrated optical components for aerospace applications.

Sarkisov, Sergey↗

Velocity surface measurements for ZnO films over /001/-cut GaAs

A potential application for a piezoelectic film deposited on a GaAs substrate is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the filmed structure is critical for the optimum design of such devices. In this article, the measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metallized ZnO/SiO2 or Si3N4/GaAs /001/-cut samples are reported using two different techniques: (1) knife-edge laser probe, (2) line-focus-beam scanning acoustic microscope. Comparisons, such as measurement accuracy and tradeoffs, between the former (dry) and the latter (wet) method are given. It is found that near the group of zone axes (110) propagation direction the autocollimating SAW property of the bare GaAs changes into a noncollimating one for the layered structure, but a reversed phenomenon exists near the group of zone axes (100) direction. The passivation layer of SiO2 or Si3N4 (less than 0.2 micrometer thick) and the metallization layer change the relative velocity but do not significantly affect the velocity surface. On the other hand, the passivation layer reduces the propagation loss by 0.5-1.3 dB/microseconds at 240 MHz depending upon the ZnO film thickness. Our SAW propagation measurements agree well with theorectical calculations. We have also obtained the anisotropy factors for samples with ZnO films of 1.6, 2.8, and 4.0 micrometer thickness. Comparisons concerning the piezoelectric coupling and acoustic loss between dc triode and rf magnetron sputtered ZnO films are provided.

Kim, Yoonkee↗

Reduction of acoustic losses by outgassing

Heat treatment procedure at low pressure increases internal-friction quality factor of treated samples. Method can reduce propagation losses in porous ferroelectric ceramics by as much as a factor of 100.

Cirlin, E. H.↗

Interference estimate around Canberra DSN Station at 2.04 GHz during Huygens release phase from Cassini

During the descent phase of the Huygens Probe released from the Cassini spacecraft and inserted at Titan, the Deep Space Network (DSN) Canberra Deep Space Station (DSS) 43 (with its 70-m antenna) is being considered as a backup station to directly receive the Huygens Probe data being transmitted at 2.04 GHz. This study provides an assessment on the interference level from the major nearby transmitters operating in this frequency band. The minimum trans-horizon attenuations are calculated using terrain topographic data and the Trans-Horizon Interference Propagation Loss (THIPL) Computing Program recently developed based on ITU-R P.452, and the calculations take into account all propagation modes under a 0.1% of time exceeded. We find that there are five terrestrial transmitters within 100 km of DSS 43. Transmitter 1 is the closest to DSS 43, and needs to be coordinated to avoid interference. The rest of the four transmitters will not interfere with DSS 43. The interference levels from these transmitters are all below the DSN protection criteria of 99.9% of time.

Deep Space Network (DSN)↗

Measuring and Modeling of the Dielectric Properties and Attenuation of Vegetation

The dielectric properties of vegetation material--primarily agricultural plants--as a function of moisture content and microwave frequency was measured and used to develop dielectric mixing models for the vegetation-water mixture. A model for the loss factor of a vegetation canopy was also developed. During the first phase of this investigation, three waveguide transmission systems covering from 1 to 2-GHz, from 3.5 to 6.5-GHz, and from 7.5 to 8.5-GHz bands were constructed and calibrated. By measuring the magnitude and phase of the field transmission coefficient of a given sample, it was possible to calculate the real and imaginary parts of the complex dielectric constant of the sample. Measurements were made for numerous samples of leaves and stalks of wheat and corn, and for wheat heads. Also, dielectric measurements were made of the liquid included in the vegetation material after extraction by mechanical means. The propagation loss is more than an order of magnitude greater than had previously been assumed. Various types of dielectric mixing models were investigated in terms of the available data, and a propagation model was developed and evaluated against direct canopy attenuation measurements. The canopy measurements were made by transmitting a signal from a radar antenna mounted atop a truck-mounted boom, and using a small antenna mounted on a rail beneath the canopy to receive it.

Ulaby, F. T.↗

Propagation characteristics of 20/30 GHz links with a 40 deg masking angle

An effective means of reducing Ka-band propagation loss is the use of high elevation angle paths, i.e., a large masking angle, between earth stations and the space platform. Experimental data have shown that the signal loss associated with most atmospheric effects is inversely proportional to sin(theta), where theta denotes the path elevation angle. A large masking angle and a generous link margin are the primary tools used in the Teledesic Corporation network to minimize atmospheric-related signal outages. This report documents the results of a study sponsored by Teledesic Corporation to characterize the effect of radiowave propagation on Teledesic's links. The recent Olympus campaign in Europe and the U.S. has provided new information that is not included. Therefore, CCIR recommendations and NASA Propagation Handbook models constitute the base of this study, and, when applicable, data from other sources have been used to improve the predictions. Furthermore, attention has been given to data from the Olympus campaign. The effects investigated during this study include gas, rain, fog, sand, and cloud attenuation; diversity gain; scintillation; and depolarization.

Davarian, Faramaz↗

Interference from the Robledo DSN Transmitters to Central Madrid IMT-2000/UMTS System through Terrain Diffraction at S-Band

This study evaluates the possible interference from DSN Robledo 70-m transmitter with Madrid IMT-2000/UMTS wireless users in Spain as both systems will share the same frequency band. Using the effective earth radius, the 50 km terrain profile between Robledo and Madrid is modified and reconstructed. The diffraction propagation losses due to mountain peaks are calculated for the receivers in Madrid urban area. The mountains along the path are simplified into a rounded knife-edge and a rounded obstacle. The results show that for a near surface receiver (1.5 m above the ground) in Madrid, interference signal powers received are less than -135 dBm, which is far below the -109 dBm, the IMT-2000 wireless phone threshold. When a receiver is located at about 40 m above the ground (e.g., the top of Clock Tower of Cibeles Palace), diffraction will generate interference power less than -115 dBm. We find that our calculation results are basically consistent with those from the Longley-Rice model, while the latter has smaller loss because of the low resolution terrain profile used. As a comparison, we also find that the measurements of interference powers of -121.2 dBm at the top of Clock tower is in the range of the estimation. We conclude that the interference through the diffraction mechanism will not cause any problem to IMT-2000/UMTS users at near the surface of Madrid urban area.

telecommunications↗

ZnO Films on {001}-Cut <110>-Propagating GaAs Substrates for Surface Acoustic Wave Device Applications

A potential application for piezoelectric films on GaAs substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the layered structure is critical for the optimum and accurate design of such devices. The acoustic properties of ZnO films sputtered on {001}-cut <110> -propagating GaAs substrates are investigated in this article, including SAW Velocity effective piezoelectric coupling constant, propagation loss. diffraction, velocity surface, and reflectivity of shorted and open metallic gratings. The measurements of these essential SAW properties for the frequency range between 180 and 360 MHz have been performed using a knife-edge laser probe for film thicknesses over the range of 1.6-4 micron and with films or different grain sizes. The high quality of dc triode sputtered films was observed as evidenced by high K(exp 2) and low attenuation. The measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metalized ZnO on SiO2, or Si3N4 on {001}-cut GaAs samples are reported using two different techniques: 1) knife-edge laser probe, 2) line-focus-beam scanning acoustic microscope. It was found that near the <110> propagation direction, the focusing SAW property of the bare GaAs changes into a nonfocusing one for the layered structure, but a reversed phenomenon exists near the <100> direction. Furthermore, to some extent the diffraction of the substrate can be controlled with the film thickness. The reflectivity of shorted and open gratings are also analyzed and measured. Zero reflectivity is observed for a shorted grating. There is good agreement between the measured data and theoretical values.

Kim, Yoonkee↗

ZnO films on /001/-cut (110)-propagating GaAs substrates for surface acoustic wave device applications

A potential application for piezoelectric films substrates is the monolithic integration of surface acoustic wave (SAW) devices with GaAs electronics. Knowledge of the SAW properties of the layered structure is critical for the optimum and accurate design of such devices. The acoustic properties of ZnO films sputtered on /001/-cut group of (110) zone axes-propagating GaAs substrates are investigated in this article, including SAW velocity, effective piezoelectric coupling constant, propagation loss, diffraction, velocity surface, and reflectivity of shorted and open metallic gratings. The measurements of these essential SAW properties for the frequency range between 180 and 360 MHz have been performed using a knife-edge laser probe for film thicknesses over the range of 1.6-4 micron and with films of different grain sizes. The high quality of dc triode sputtered films was observed as evidenced by high K(sup 2) and low attenuation. The measurements of the velocity surface, which directly affects the SAW diffraction, on the bare and metalized ZnO on SiO2 or Si3N4 on /001/-cut GaAs samples are reported using two different techniques: (1) knife-edge laser probe, (2) line-focus-beam scanning acoustic microscope. It was found that near the group of (110) zone axes propagation direction, the focusing SAW property of the bare GaAs changes into a nonfocusing one for the layered structure, but a reversed phenomenon exists near the (100) direction. Furthermore, to some extent the diffraction of the substrate can be controlled with the film thickness. The reflectivity of shorted and open gratings are also analyzed and measured. Zero reflectivity is observed for a shorted grating. There is good agreement between the measured data and theoretical values.

Hickernell, Frederick S.↗

Diffuse Galactic Continuum Gamma Rays. A Model Compatible with EGRET Data and Cosmic-ray Measurements

We present a study of the compatibility of some current models of the diffuse Galactic continuum gamma-rays with EGRET data. A set of regions sampling the whole sky is chosen to provide a comprehensive range of tests. The range of EGRET data used is extended to 100 GeV. The models are computed with our GALPROP cosmic-ray propagation and gamma-ray production code. We confirm that the "conventional model" based on the locally observed electron and nucleon spectra is inadequate, for all sky regions. A conventional model plus hard sources in the inner Galaxy is also inadequate, since this cannot explain the GeV excess away from the Galactic plane. Models with a hard electron injection spectrum are inconsistent with the local spectrum even considering the expected fluctuations; they are also inconsistent with the EGRET data above 10 GeV. We present a new model which fits the spectrum in all sky regions adequately. Secondary antiproton data were used to fix the Galactic average proton spectrum, while the electron spectrum is adjusted using the spectrum of diffuse emission it- self. The derived electron and proton spectra are compatible with those measured locally considering fluctuations due to energy losses, propagation, or possibly de- tails of Galactic structure. This model requires a much less dramatic variation in the electron spectrum than models with a hard electron injection spectrum, and moreover it fits the y-ray spectrum better and to the highest EGRET energies. It gives a good representation of the latitude distribution of the y-ray emission from the plane to the poles, and of the longitude distribution. We show that secondary positrons and electrons make an essential contribution to Galactic diffuse y-ray emission.

Strong, Andrew W.↗

Low-loss low thermo-optic coefficient Ta 2 O 5 on crystal quartz planar optical waveguides

Optical resonator-based frequency stabilization plays a critical role in ultra-low linewidth laser emission and precision sensing, atom clocks, and quantum applications. However, there has been limited success in translating traditional bench-top stabilization cavities to compact on-chip integrated waveguide structures that are compatible with photonic integration. The challenge lies in realizing waveguides that not only deliver low optical loss but also exhibit a low thermo-optic coefficient and frequency noise stability. Given the problematic sources of frequency noise within dielectrics, such as thermorefractive noise, resonators with small thermo-optic response are desirable for on-chip reference cavities. We report the first demonstration of a Ta 2 O 5 (tantala) waveguide core fabricated on a crystal quartz substrate lower cladding with TEOS-PECVD SiO 2 upper cladding. This waveguide offers significant advantages over other waveguides in terms of its low thermo-optic coefficient and reduced thermorefractive-related frequency noise. We describe the waveguide structure and key design parameters as well as fabrication considerations for processing tantala on quartz waveguides. We report a waveguide thermo-optic coefficient of -1.14 × 10 -6 RIU/K, a value that is over 6 times smaller in magnitude than that of SiO 2 -substrate tantala waveguides, with a propagation loss of 1.19 dB/cm at 1550 nm and <1.33 dB/cm across the 1525 nm–1610 nm wavelength range. Within a 1.6 mm radius ring resonator, we demonstrate a 2.54 × 10 5 intrinsic Q factor. With the potential for very low loss and the ability to control the thermal response, this waveguide platform takes a key step toward creating thermally stable integrated resonators for on-chip laser frequency stabilization and other applications.

42 ENGINEERING↗

Silicon-On-Silicon Carbide Platform for Integrated Photonics

Silicon carbide (SiC)'s nonlinear optical properties and applications to quantum information have recently brought attention to its potential as an integrated photonics platform. However, despite its many excellent material properties, such as large thermal conductivity, wide transparency window, and strong optical nonlinearities, it is generally a difficult material for microfabrication. Here, it is shown that directly bonded silicon-on-silicon carbide can be a high-performing hybrid photonics platform that does not require the need to form SiC membranes or directly pattern in SiC. The optimized bonding method yields defect-free, uniform films with minimal oxide at the silicon–silicon–carbide interface. Ring resonators are patterned into the silicon layer with standard, complimentary metal–oxide–semiconductor (CMOS) compatible (Si) fabrication and measure room-temperature, near-infrared quality factors exceeding 10 5 . The corresponding propagation loss is 5.7 dB cm -1 . The process offers a wafer-scalable pathway to the integration of SiC photonics into CMOS devices.

36 MATERIALS SCIENCE↗

High-speed programmable photonic circuits in a cryogenically compatible, visible–near-infrared 200 mm CMOS architecture

Abstract Recent advances in photonic integrated circuits have enabled a new generation of programmable Mach–Zehnder meshes (MZMs) realized by using cascaded Mach–Zehnder interferometers capable of universal linear-optical transformations on N input/output optical modes. MZMs serve critical functions in photonic quantum information processing, quantum-enhanced sensor networks, machine learning and other applications. However, MZM implementations reported to date rely on thermo-optic phase shifters, which limit applications due to slow response times and high power consumption. Here we introduce a large-scale MZM platform made in a 200 mm complementary metal–oxide–semiconductor foundry, which uses aluminium nitride piezo-optomechanical actuators coupled to silicon nitride waveguides, enabling low-loss propagation with phase modulation at greater than 100 MHz in the visible–near-infrared wavelengths. Moreover, the vanishingly low hold-power consumption of the piezo-actuators enables these photonic integrated circuits to operate at cryogenic temperatures, paving the way for a fully integrated device architecture for a range of quantum applications.

47 OTHER INSTRUMENTATION↗

Monolithic AlScN/SiC phononic waveguides for scalable acoustoelectric and quantum devices

Unlike conventional surface acoustic wave devices, phononic waveguide systems enable higher circuit density and stronger strain and piezoelectric fields, making them promising for advanced acoustoelectric and quantum applications. One such material system for generating and guiding phonons at gigahertz frequencies is AlScN on SiC, which can be synthesized by sputter depositing AlScN directly onto SiC wafers. The AlScN on the SiC platform allows for tightly vertically-confined acoustic modes with high electromechanical coupling, high speed of sound, and simple fabrication of strip and rib waveguides. Until now, this system has only been studied as a slab waveguide platform, i.e., without any lateral waveguiding. Here, we demonstrate a two-dimensionally confined phononic architecture in AlScN on SiC that supports guided modes at 2.95 and 4.05 GHz. These modes exhibit strong electromechanical coupling coefficients (k 2 = 4.27%) and propagation losses on the order of 10 dB/mm. Furthermore, this architecture is well-suited for phononic routing and power-efficient active or nonlinear devices such as amplifiers, mixers, and oscillators, and is compatible with the integration of quantum systems, including vacancy centers, charge carriers, photons, and spins, either embedded in SiC or heterogeneously integrated on the surface.

Electrical components↗

High-bandwidth CMOS-voltage-level electro-optic modulation of 780 nm light in thin-film lithium niobate

Integrated photonics operating at visible-near-infrared (VNIR) wavelengths offer scalable platforms for advancing optical systems for addressing atomic clocks, sensors, and quantum computers. The complexity of free-space control optics causes limited addressability of atoms and ions, and this remains an impediment on scalability and cost. Networks of Mach-Zehnder interferometers can overcome challenges in addressing atoms by providing high-bandwidth electro-optic control of multiple output beams. Here, we demonstrate a VNIR Mach-Zehnder interferometer on lithium niobate on sapphire with a CMOS voltage-level compatible full-swing voltage of 4.2 V and an electro-optic bandwidth of 2.7 GHz occupying only 0.35 mm 2 . Our waveguides exhibit 1.6 dB/cm propagation loss and our microring resonators have intrinsic quality factors of 4.4 × 10 5 . This specialized platform for VNIR integrated photonics can open new avenues for addressing large arrays of qubits with high precision and negligible cross-talk.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Optical bistability in PECVD silicon-rich nitride

We present a study of optical bi-stability in a 3.02 refractive index at 1550nm plasma enhanced chemical vapor deposition (PECVD) silicon-rich nitride (SRN) film, as it pertains to bi-stable switching, memory applications, and thermal sensing applications. In this work we utilize an SRN ring resonator device, which we first characterize at low-power and then compare thermo-optic coefficients, (2.12 ± 0.125) × 10 −4 /°C, obtained from thermal-heating induced resonance shifts to optically induced resonance shifts as well as estimated propagation loss and absorption. We then measure the time response of this nonlinearity demonstrating the relaxation time to be 18.7 us, indicating the mechanism to be thermal in nature. Finally, we demonstrate bi-stable optical switching.

42 ENGINEERING↗