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All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Curved-Focal-Plane Arrays Using Deformed-Membrane Photodetectors

A versatile and simple approach to the design and fabrication of curved-focal-plane arrays of silicon-based photodetectors is being developed. This approach is an alternative to the one described in "Curved Focal-Plane Arrays Using Back- Illuminated High-Purity Photodetectors" (NPO-30566), NASA Tech Briefs, Vol. 27, No. 10 (October 2003), page 10a. As in the cited prior article, the basic idea is to improve the performance of an imaging instrument and simplify the optics needed to obtain a given level of performance by making an image sensor (in this case, an array of photodetectors) conform to a curved focal surface, instead of designing the optics to project an image onto a flat focal surface. There is biological precedent for curved-focal-surface designs: retinas - the image sensors in eyes - conform to the naturally curved focal surfaces of eye lenses. The present approach is applicable to both front-side- and back-side-illuminated, membrane photodetector arrays and is being demonstrated on charge-coupled devices (CCDs). The very-large scale integrated (VLSI) circuitry of such a CCD or other array is fabricated on the front side of a silicon substrate, then the CCD substrate is attached temporarily to a second substrate for mechanical support, then material is removed from the back to obtain the CCD membrane, which typically has a thickness between 10 and 20 m. In the case of a CCD designed to operate in back-surface illumination, delta doping can be performed after thinning to enhance the sensitivity. This approach is independent of the design and method of fabrication of the front-side VLSI circuitry and does not involve any processing of a curved silicon substrate. In this approach, a third substrate would be prepared by polishing one of its surfaces to a required focal-surface curvature. A CCD membrane fabricated as described above would be pressed against, deformed into conformity with, and bonded to, the curved surface. The technique used to press and bond the CCD membrane would depend on the nature of the supporting material (see figure). For example, if the third substrate were made of quartz frit, the substrate would be prepared by suffusing it with epoxy. Then one would take advantage of the porosity of the frit by applying a partial vacuum to the opposite surface of the frit, causing atmospheric pressure to push the CCD membrane against the curved surface. The curing of the epoxy would bond the CCD membrane to the curved surface. Alternatively, if the third substrate were made of a nonporous material, the curved substrate surface would be prepared by coating it with a wax or an uncured epoxy. The CCD membrane would be pressed against the coated, curved surface by use of a suitably pressurized balloon. The CCD membrane would then become bonded to the curved surface by curing of the epoxy or freezing of the wax.

Nikzad, Shouleh↗
NASA NTRS2008

Mid-Wave and Long-Wave Infrared Dualband Megapixel QWIP Focal Plane Array

Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024x1024 pixel InGaAs/GaAs/AlGaAs based quantum well infrared photodetector (QWIP) focal planes and a 320x256 pixel dual-band pixel co-registered simultaneous QWIP focal plane array have been demonstrated as pathfinders. In this paper, we discuss the development of 1024x1024 MWIR/LWIR dual-band pixel co-registered simultaneous QWIP focal plane array.

Gunapala, S. D.↗
NASA NTRS2005

Multi-Color Megapixel QWIP focal plane arrays for remote sensing

In this paper, we will discuss the performance in terms of quantum efficiency, NEAT, uniformity, operability, and modulation transfer functions of the 1024x1024 pixel arrays and the progress of dualband QWIP focal plane array development work.

infixed imaging↗
NASA NTRS2001

Review of Concepts and Applications for Multispectral/Hyperspectral Focal Plane Array (FPA) Technology

Multispectral, and ultimately hyperspectral, focal plane arrays (FPAs) represent the logical extension of two-color FPA technology, which has already shown its utility in military applications. Incorporating the spectral discrimination function directly in the FPA would offer the potential for orders-of-magnitude increase in remote sensor system performance. It would allow reduction or even elimination of optical components currently required to provide spectral discrimination in atmospheric remote sensors. The result would be smaller, simpler instruments with higher performance than exist today.

McAdoo, James A.↗
NASA NTRS1989

Blocked impurity band hybrid infrared focal plane arrays for astronomy

High-performance infrared hybrid focal plane arrays using 10- x 50-element Si:As blocked-impurity-band (BIB) detectors (cutoff wavelength = 28 microns) and matching switched MOSFET multiplexers have been developed and characterized for space astronomy. Use of impurity-band-conduction technology provides detectors which are nuclear-radiation-hard and free of the many anomalies associated with conventional silicon photoconductive detectors. Emphasis in the present work is on recent advances in detector material quality which have led to significantly improved detector and hybrid characteristics. Results demonstrating increased quantum efficiency (particularly at short-wavelength infrared), obtained by varying the BIB detector properties (infrared active layer thickness and arsenic doping profile), are summarized. Measured read noise and dark current for different temperatures are reported. The hybrid array performance achieved demonstrates that BIB detectors are well suited for use in astronomical instrumentation.

Reynolds, D. B.↗
NASA NTRS2007

Focal-Plane Arrays of Quantum-Dot Infrared Photodetectors

Focal-plane arrays of semiconductor quantum-dot infrared photodetectors (QDIPs) are being developed as superior alternatives to prior infrared imagers, including imagers based on HgCdTe devices and, especially, those based on quantum-well infrared photodetectors (QWIPs). HgCdTe devices and arrays thereof are difficult to fabricate and operate, and they exhibit large nonunformities and high 1/f (where f signifies frequency) noise. QWIPs are easier to fabricate and operate, can be made nearly uniform, and exhibit lower 1/f noise, but they exhibit larger dark currents, and their quantization only along the growth direction prevents them from absorbing photons at normal incidence, thereby limiting their quantum efficiencies. Like QWIPs, QDIPs offer the advantages of greater ease of operation, greater uniformity, and lower 1/f noise, but without the disadvantages: QDIPs exhibit lower dark currents, and quantum efficiencies of QDIPs are greater because the three-dimensional quantization of QDIPs is favorable to the absorption of photons at normal or oblique incidence. Moreover, QDIPs can be operated at higher temperatures (around 200 K) than are required for operation of QWIPs. The main problem in the development of QDIP imagers is to fabricate quantum dots with the requisite uniformity of size and spacing. A promising approach to be tested soon involves the use of electron-beam lithography to define the locations and sizes of quantum dots. A photoresist-covered GaAs substrate would be exposed to the beam generated by an advanced, high-precision electron beam apparatus. The exposure pattern would consist of spots typically having a diameter of 4 nm and typically spaced 20 nm apart. The exposed photoresist would be developed by either a high-contrast or a low-contrast method. In the high-contrast method, the spots would be etched in such a way as to form steep-wall holes all the way down to the substrate. The holes would be wider than the electron beam spots perhaps as wide as 15 to 20 nm, but may be sufficient to control the growth of the quantum dots. In the low-contrast method, the resist would be etched in such a way as to form dimples, the shapes of which would mimic the electron-beam density profile. Then by use of a transfer etching process that etches the substrate faster than it etches the resist, either the pattern of holes or a pattern comprising the narrow, lowest portions of the dimples would be imparted to the substrate. Having been thus patterned, the substrate would be cleaned. The resulting holes or dimples in the substrate would serve as nucleation sites for the growth of quantum dots of controlled size in the following steps. The substrate would be cleaned, then placed in a molecular-beam-epitaxy (MBE) chamber, where native oxide would be thermally desorbed and the quantum dots would be grown.

Gunapala, Sarath↗
NASA NTRS2006

Coherent Optical Focal Plane Array Receiver for PPM Signals: Investigation and Applications

The performance of a coherent optical focal plane array receiver for PPM signals under atmospheric turbulence is investigated and applications of this system are addressed. The experimental demonstration of this project has already been explained in previous publications [1]. This article shows a more exhaustive analysis of the expressions needed to obtain the Bit Error Rate (BER) for the real system under study in the laboratory. Selected experimental results of this system are described and compared with theoretical BER expressions, and array combining gains are presented. Receiver sensitivity in terms of photons per bit (PPB) is examined; BER results are shown as a function of signal to noise ratios, (SNR), as well as a function of photons per symbol, and photons per bit.

shot noise limited↗
NASA NTRS1981

Submillisecond measurements of system optical modulation functions in mosaic focal plane arrays

Measurements of system optical modulation functions (MTF, SWR) may be distorted by time-dependent environmental effects (thermal, vibration, flexure) and by electronics drift. Fast data collection may therefore be advantageous by minimizing drift time. The problem of fast data collection is accentuated when modulation data must be taken on a large number of detectors in a focal plane array. A method has been developed for the generation and storage of knife edge data from focal plane arrays, where data collection time per detector is in the submillisecond range. Once knife edge collects are completed, MTF response is found using conventional convolution techniques. SWR is obtained directly from knife edge response using a computerized simulation algorithm which bypasses use of MTF harmonics. Requirements for detector electronics speed, damping, and dynamic range are considered.

Thurlow, P. E.↗
NASA NTRS1983

HgCdTe infrared focal plane arrays for imaging spectrometer applications

It is pointed out that the development of two-dimensional infrared focal plane arrays (FPAs) offers new alternatives in imaging and remote sensing. Attention is given to an imaging spectrometer which represents a new concept exploiting two-dimensional arrays. This instrument is to be used for the remote sensing of the earth on the basis of a utilization of reflected sunlight in both the visible (VIS) and short wavelength infrared (SWIR). The imaging spectrometer concept is to make it possible to obtain contiguous spectral coverage at high resolution without having to use increasingly complex scanners. The concept utilizes a prism spectrometer to disperse the image of the slit across the area arrays in the focal plane. The focal plane consists of silicon CCDs for the VIS and near infrared portions of the spectrum and HgCdTe hybrid arrays for the SWIR.

Rode, J. P.↗
NASA NTRS2012

320 x 256 Complementary Barrier Infrared Detector Focal Plane Array for Long-Wave Infrared Imaging

A 320 x 256 Complementary Barrier Infrared (CBIRD) focal plane array for long-wavelength infrared (LWIR) imaging is reported. The arrays were grown by molecular beam expitaxy (MBE) with a 300 period 1.9 um thick absorber. The mean dark current density of 2.2 x 10-4 A/cm2 was measured at an operating bias of 128 mV with a long wavelength cutoff of 8.8 ?m observed at 50% of the peak. The maximum quantum efficiency was 54% measured at 5.6 ?m. Operating at T = 80K, the array yielded an 81% fill factor with 97% operability. Good imagery with a mean noise equivalent different temperature (NE?T) of 18.6 mK and a mean detectivity of D* = 1.3 x 1011 cm-Hz1/2/W was achieved. The substrate was thinned using mechanical lapping and neither an AR coating nor a passivation layer was applied. This article provides the details of the fabrication process for achieving low-dark current LWIR CBIRD arrays. Discussion for an effective hard mask for excellent pattern transfer is given and appropriate mounting techniques for good thermal contact during the dry etching process is described. The challenges and differences between etching large 200 ?m test diodes and small 28 ?m FPA pixels are given.

Focal Plane Arrays (FPA)↗
NASA NTRS2021

High operating temperature T2SL digital focal plane arrays for earth remote sensing instruments

In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II superlattice (T2SL) based infrared photodetectors using the barrier infrared detector (BIRD) architecture. The high operating temperature (HOT) BIRD focal plane arrays (FPAs) offer the same high performance, uniformity, operability, manufacturability, and affordability advantages as InSb. However, mid-wavelength infrared (MWIR) HOT-BIRD FPAs can operate at significantly higher temperatures (>150K) than InSb FPAs (typically 80K). Moreover, while InSb has a fixed cutoff wavelength (~5.4 µm), the HOT-BIRD offers a continuous adjustable cutoff wavelength, ranging from ~4 µm to >15 µm, and is therefore also suitable for long wavelength infrared (LWIR) as well. The LWIR detectors based on the BIRD architecture has also demonstrated significant operating temperature advantages over those based on traditional p-n junction designs. Two 6U SmalSat missions CIRAS (Cubesat Infrared Atmospheric Sounder) and HyTI (Hyperspectral Thermal Imager) are based on JPL’s T2SL BIRD focal plane arrays (FPAs). Based on III-V compound semiconductors, the BIRD FPAs offer a breakthrough solution for the realization of low cost (high yield), high-performance FPAs with excellent uniformity and pixel-to-pixel operability. We have also exploring the possibilities of integrating either metasurface resonator cavity or metasurface based flatlens with individual pixels to improve the signal-to-noise ratio of the detectors. Furthermore, we will discuss the advantages of the utilization of all digital read out integrated circuits with HOT-BIRDs.

Ghuman, and Parminder↗
NASA NTRS1992

Focal plane arrays for submillimeter waves using two-dimensional electron gas elements: A grant under the Innovative Research Program

This final report describes a three-year research effort, aimed at developing new types of THz low noise receivers, based on bulk effect ('hot electron') nonlinearities in the Two-Dimensional Electron Gas (2DEG) Medium, and the inclusion of such receivers in focal plane arrays. 2DEG hot electron mixers have been demonstrated at 35 and 94 GHz with three orders of magnitude wider bandwidth than previous hot electron mixers, which use bulk InSb. The 2DEG mixers employ a new mode of operation, which was invented during this program. Only moderate cooling is required for this mode, to temperatures in the range 20-77 K. Based on the results of this research, it is now possible to design a hot electron mixer focal plane array for the THz range, which is anticipated to have a DSB receiver noise temperature of 500-1000K. In our work on this grant, we have found similar results the the Cronin group (resident at the University of Bath, UK). Neither group has so far demonstrated heterodyne detection in this mode, however. We discovered and explored some new effects in the magnetic field mode, and these are described in the report. In particular, detection of 94 GHz and 238 GHz, respectively, by a new effect, 'Shubnikov de Haas detection', was found to be considerably stronger in our materials than the cyclotron resonance detection. All experiments utilized devices with an active 2DEG region of size of the order of 10-40 micrometers long, and 20-200 micrometers wide, formed at the heterojunction between AlGaAs and GaAs. All device fabrication was performed in-house. The materials for the devices were also grown in-house, utilizing OMCVD (Organo Metallic Chemical Vapor Deposition). In the course of this grant, we developed new techniques for growing AlGaAs/GaAs with mobilities equalling the highest values published by any laboratory. We believe that the field of hot electron mixers and detectors will grow substantially in importance in the next few years, partly as a result of the opportunity given us through this grant, which represents the major effort in the US so far. We note, however, that parallel research on hot electron mixers in thin film superconductors in Russia, and recently in Sweden, have demonstrated mixing up to 1 THz, with the potential for low-noise receivers for frequencies up to many THz. The three groups recently assessed the relative adtantages of 2DEG and superconducting film mixers in a joint paper (Kollberg et al., 1992; see Appendix II).

Yngvesson, K. Sigfrid↗
NASA NTRS1987

Mercury cadmium telluride short- and medium-wavelength infrared staring focal plane arrays

Short and medium IR wavelength 64 x 64 hybrid focal plane arrays (FPAs) have been developed using sapphire-grown HgCdTe. The short wavelength arrays were developed for a prototype airborne imaging spectrometer, while those of medium wavelength are suitable for tactical missile seekers and strategic surveillance systems. Attention is presently given to results obtained for these FPAs' current-voltage characteristics, as well as for their characterization at different temperatures. The detector arrays were also mated to a multiplexer and characterized under different operating conditions. The unit cell size used is 52 x 52 microns.

Vural, Kadri↗
NASA NTRS2003

640 X 512 pixel long-wavelength infrared narrowband, multiband, and broadband QWIP focal plane arrays

A 640 512 pixel, long-wavelength cutoff, narrowband(delta lambda/lambda ~ 10%) quantum-well infrared photodetector(QWIP) focal plane array (FPA), a four-band QWIP FPA in the 4??m spectral region, and a broadband (delta lambda/lambda ~ 42%)QWIP FPA having a 15.4 m cutoff have been demonstrated. In this paper, we discuss the electrical and optical characterization of these FPAs, and their performance. In addition, we discuss the development of a very sensitive (NEDT ~ 10.6 mK) 640 X 512 pixel thermal imaging camera having a 9 lambda m cutoff.

broadband↗