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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Chemical, electrical, and optical properties of cobalt as gallium phosphide impurity
Studies of metallurgical, electrical, and optical properties of gallium phosphide
Extrinsic and intrinsic epitaxially deposited single crystal gallium phosphide solar cells, noting conversion efficiencies
Absorption spectra of divalent iron in transition group elements and gallium phosphide
Metallurgical, optical, and electrical properties of gallium arsenide and gallium phosphide, and imperfections and donor impurities in GaP
Photoelectrical and optical properties of gallium phosphide
Photoconductivity, solubility, diffusion and electric properties of doped and undoped gallium phosphide crystals
Metallurgical, electrical, and optical properties of gallium phosphide
Metallurgical, electrical, and optical properties of gallium phosphide crystals
Summary information on various studies to determine metallurgical, electrical, and optical properties of gallium phosphides
Radiotracer technique for sulfur diffusion in gallium phosphide and arsenide as function of temperature and pressure
Barrier diodes formed by nickel evaporation on undoped gallium phosphide by vertical liquid epitaxy
Preparation of ohmic contacts from alloying germanium and gallium phosphide
Vapor deposition and acceptor impurity diffusion techniques are used to prepare indium-gallium phosphide junctions. Certain problems in preparation are overcome by altering gas flow conditions and by increasing the concentration of phosphine in the gas. A general formula is given for the alloy's composition.
Design and fabrication of gallium phosphide rectifiers
Epitaxial boron phosphides single crystals growth, using thermal decomposition and reduction for deposition on hexagonal silicon carbide substrates basal plane
Work done on the development of gallium aluminum phosphide alloys for electroluminescent light sources is described. The preparation of this wide band gap semiconductor alloy, its physical properties (particularly the band structure, the electrical characteristics, and the light emitting properties) and work done on the fabrication of diode structures from these alloys are broadly covered.
The unique properties of single-junction gallium phosphide devices incorporating both red and green radiative recombination centers were investigated in application to the fabrication of monolithic 5 x 7 displays capable of displaying symbolic and alphanumeric information in a multicolor format. A number of potentially suitable material preparation techniques were evaluated in terms of both material properties and device performance. Optimum results were obtained for double liquid-phase-epitaxial process in which an open-tube dipping technique was used for n-layer growth and a sealed tipping procedure for subsequent p-layer growth. It was demonstrated that to prepare devices exhibiting a satisfactory range of dominant wavelengths which can be perceived as distinct emission colors extending from the red through green region of the visible spectrum involves a compromise between the material properties necessary for efficient red emission and those considered optimum for efficient green emission.