Spin-lattice relaxation in ruby.
Spin-lattice relaxation times for ruby of very low chromium concentration at low temperatures for one-phonon kronig-van vleck process
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Infrared absorptivities of transition metals at room and liquid-helium temperatures.
Evaluation of experimental data concerning the normal spectral absorptivities of the transition metals, nickel, iron, platinum, and chromium, at both room and liquid-helium temperatures in the wavelength range from 2.5 to 50 microns. The absorptivities were derived from reflectivity measurements made relative to a room-temperature vapor-deposited gold reference mirror. The absorptivity of the gold reference mirror was measured calorimetrically, by use of infrared laser sources. Investigation of various methods of sample-surface preparation resulted in the choice of a vacuum-annealing process as the final stage. The experimental results are discussed on the basis of the anomalous-skin-effect theory modified for multiple conduction bands. As predicted, the results approach a single-band model toward the longer wavelengths. Agreement between theory and experiment is considerably improved by taking into account the modification of the relaxation time due to the photon-electron-phonon interaction proposed by Holstein (1954) and Gurzhi (1958); but, particularly at helium temperatures, the calculated curve is consistently below the experimental results.
Jones, M. C.↗
A Hot-electron Direct Detector for Radioastronomy
A hot-electron transition-edge superconducting bolometer with adjustable thermal relaxation speed is proposed. The bolometer contacts are made from a superconductor with high critical temperature which blocks the thermal diffusion of hot carriers into the contacts. Thus electron-phonon interaction is the only mechanism for heat removal. The speed of thermal relaxation for hot electrons in a nanometer-size superconducting bolometer with T(sub c) = 100-300 mK is controlled by the elastic electron mean free path l. The relaxation rate behaves as T(sup 4)l at subkelvin temperatures and can be reduced by a factor of 10-100 by decreasing 1. Then an antenna- or wave guide-coupled bolometer with a time constant approx. = 10(exp -3) to 10(exp -4) s will exhibit photon-noise limited performance at millimeter and submillimeter wavelengths. The bolometer will have a figure-of-merit NEPtau = 10(exp -22) - 10(exp -21) W/Hz at 100 mK which is 10(exp 3) to 10(exp 4) times better (ie: smaller) than that of a state-of-the-art bolometer. A tremendous increase in speed and sensitivity will have a significant impact for observational mapping applications.
Karasik, Boris S.↗
A Hydrodynamic Theory for Spatially Inhomogeneous Semiconductor Lasers: Microscopic Approach
Starting from the microscopic semiconductor Bloch equations (SBEs) including the Boltzmann transport terms in the distribution function equations for electrons and holes, we derived a closed set of diffusion equations for carrier densities and temperatures with self-consistent coupling to Maxwell's equation and to an effective optical polarization equation. The coherent many-body effects are included within the screened Hartree-Fock approximation, while scatterings are treated within the second Born approximation including both the in- and out-scatterings. Microscopic expressions for electron-hole (e-h) and carrier-LO (c-LO) phonon scatterings are directly used to derive the momentum and energy relaxation rates. These rates expressed as functions of temperatures and densities lead to microscopic expressions for self- and mutual-diffusion coefficients in the coupled density-temperature diffusion equations. Approximations for reducing the general two-component description of the electron-hole plasma (EHP) to a single-component one are discussed. In particular, we show that a special single-component reduction is possible when e-h scattering dominates over c-LO phonon scattering. The ambipolar diffusion approximation is also discussed and we show that the ambipolar diffusion coefficients are independent of e-h scattering, even though the diffusion coefficients of individual components depend sensitively on the e-h scattering rates. Our discussions lead to new perspectives into the roles played in the single-component reduction by the electron-hole correlation in momentum space induced by scatterings and the electron-hole correlation in real space via internal static electrical field. Finally, the theory is completed by coupling the diffusion equations to the lattice temperature equation and to the effective optical polarization which in turn couples to the laser field.
Li, Jianzhong↗
Microscopic Foundation and Simulation of Coupled Carrier-Temperature Diffusions in Semiconductor Lasers
A typical semiconductor-based optoelectronic device, such as a diode laser, consists of three subsystems: an optical field, an electron-hole plasma (EHP), and a host crystal lattice. The physics of such a device involves the interplay of optical, electrical and thermal processes. A proper description of such a device requires that all three processes are treated on equal footing and in a self-consistent fashion. Furthermore, since a semiconductor laser has intrinsic spatial inhomogeneity, such a self-consistency naturally leads to a set of partial differential equations in space and time. There is a significant lacking of research interest and results on the transport aspects of optical devices in the literature with only a few exceptions. Even the most important carrier diffusion coefficient has not been properly derived and studied so far for optically excited plasma, while most of the work adopted results from electronics community where heavily doped semiconductors with mainly one type of carriers are dealt with. The corresponding transport equation for plasma energy or temperature has received even less attention. In this talk we describe our recent results on such a self-consistent derivation of temperature and carrier-density diffusion equations coupled with the lasing process. Starting from the microscopic semiconductor Bloch equations (SBEs) including the Boltzmann transport terms in the distribution function equations for electrons and holes, we derived a closed set of diffusion equations for carrier densities and temperatures with self-consistent coupling to Maxwell's equation and to an effective optical polarization equation. The coherent many-body effects are included within the screened Hartree-Fock approximation, while scatterings are treated within the second Born approximation including both the in- and out-scatterings. Microscopic expressions for electron-hole (e-h) and carrier-LO (c-LO) phonon scatterings are directly used to derive the momentum and energy relaxation rates. These rates expressed as functions of temperatures and densities lead to microscopic expressions for self- and mutual-diffusion coefficients in the coupled density-temperature diffusion equations. Approximations for reducing the general two-component description of the electron-hole plasma (EHP) to a single-component one are discussed. In particular, we show that a special single-component reduction is possible when e-h scattering dominates over c-LO phonon scattering. The ambipolar diffusion approximation is also discussed and we show that the ambipolar diffusion coefficients are independent of e-h scattering, even though the diffusion coefficients of individual components depend sensitively on the e-h scattering rates. Our discussions lead to new perspectives into the roles played in the single-component reduction by the electron-hole correlation in momentum space induced by scatterings and the electron-hole correlation in real space via internal static electrical field. Finally, the theory is completed by coupling the diffusion equations to the lattice temperature equation and to the effective optical polarization which in turn couples to the laser field. The equations derived above are implemented in various limiting cases to a typical diode laser to study the consequences of nonlinear diffusion and the cross diffusion terms on laser behavior, especially the dynamic behavior of a diode laser under modulation. Detailed results will be presented by comparing with the standard rate equation results.
Li, J.↗
Temperature Sensing to Above 1500 °C Using Y 2 SiO 5 :Er Phosphor Thermometry
A transition from metallic to ceramic turbine components that can operate at higher turbine engine temperatures will push component surface temperatures from below 1200 °C into a 1300 to 1500 °C temperature range that is much more challenging for phosphor thermometry measurements. To address this challenge, Y 2 SiO 5 :Er was selected for its high temperature sensing performance by both luminescence lifetime and luminescence intensity ratio (LIR) methods as well as its thermochemical compatibility with the current generation of rare earth silicate environmental barrier coatings (EBCs) that are required to protect SiC/SiC ceramic composite components. Lifetime measurements that monitor the Er3+ 4S3/2→4I15/2 emission decay at 542 nm exhibited a slow decrease in decay time with temperature up to 1300° C, above which the decay decreased steeply to provide good temperature sensitivity in the 1300 to 1500 °C range (Fig. 1). LIR images were obtained where each pixel represented the ratio I488/I561 (I488 and I561 are the detected 488 nm 4F7/2→4I15/2 and the 561 nm 4S3/2→4I15/2 emission band intensities, respectively). Good temperature sensitivity (Fig. 2) and signal-to-background ratios were observed to above 1500 °C. Contrary to conventional guidance on selecting phosphors for high temperature sensing, the detected emission band intensities and decay times exhibited remarkably slow decreases with temperature up into the 1300 to 1500 °C range despite high phonon energies (>900 cm-1) that allow the energy gap between the 4S3/2 emitting reservoir level and the 4F9/2 level below it to be bridged by as few as three phonons. The benefits of utilizing a thermographic phosphor at very high temperatures that exhibits strong nonradiative multiphonon relaxation even at room temperature is explained by a competition between spontaneous and stimulated multiphonon emission, and the more temperature-sensitive decay time above 1300 °C is explained by a transition from high to low effective phonon energies.
temperature measurement↗
Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion
The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module includes a plurality of quantum well structure that collectively generate at least an upper lasing state, a lower lasing state, and a relaxation state such that the upper and the lower lasing states are separated by an energy corresponding to an optical frequency in a range of about 1 to about 10 Terahertz. The lower lasing state is selectively depopulated via resonant LO-phonon scattering of electrons into the relaxation state.
Hu, Qing↗
Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion
The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module includes a plurality of quantum well structure that collectively generate at least an upper lasing state, a lower lasing state, and a relaxation state such that the upper and the lower lasing states are separated by an energy corresponding to an optical frequency in a range of about 1 to about 10 Terahertz. The lower lasing state is selectively depopulated via resonant LO-phonon scattering of electrons into the relaxation state.
Hu, Qing↗
Raman scattering of InGaAs/InP grown by uniform radial flow epitaxy
Uniform radial flow epitaxy, a novel growth technique, has been used to grown InGaAs films on InP. Epitaxial layers above and below the critical thickness for the onset of slip were grown. Raman spectroscopy was used to characterize the quality of epitaxial layers, determine alloy composition, and measure the strain. Raman spectra from both pseudomorphic (strained) and relaxed (unstrained) InGaAs films were obtained at 300 and 80 K. The difference in the frequencies of their GaAs-like longitudinal optical phonons was used to calculate stress for the strained InGaAs/InP, leading to a direct formula for the evaluation of the layer stress.
Feng, Z. C.↗
Studies of superconducting materials with muon spin rotation
The muon spin rotation/relaxation technique was found to be an exceptionally effective means of measuring the magnetic properties of superconductors, including the new high temperature superconductor materials, at the microscopic level. The technique directly measures the magnetic penetration depth (type II superconductors (SC's)) and detects the presence of magnetic ordering (antiferromagnetism or spin-glass ordering were observed in some high temperature superconductor (HTSC's) and in many closely related compounds). Extensive studies of HTSC materials were conducted by the Virginia State University - College of William and Mary - Columbia University collaboration at Brookhaven National Laboratory and TRIUMF (Vancouver). A survey of LaSrCuO and YBaCaCuO systems shows an essentially linear relationship between the transition temperature T(sub c) and the relaxation rate. This appears to be a manifestation of the proportionality between T(sub c) and the Fermi energy, which suggests a high energy scale for the SC coupling, and which is not consistent with the weak coupling of phonon-mediated SC. Studies of LaCuO and YBaCuO parent compounds show clear evidence of antiferromagnetism. YBa2Cu(3-x)CO(x)O7 shows the simultaneous presence of spin-glass magnetic ordering and superconductivity. Three-dimensional SC, (Ba, K) BiO3, unlike the layered CuO-based compounds, shows no suggestion of magnetic ordering. Experimental techniques and theoretical implications are discussed.
Davis, Michael R.↗
The effect of the strain relaxation in InAs/GaAs stacked quantum dots and multiple quantum wells on the Raman spectrum
Atomistic-level simulations of the Raman shift in InAs/GaAs multiple quantum well (MQW) and stacked quantum dot (SQD) structures as a function of interlayer separation are reporter.
phonons↗
Superconducting Mixers for Far-Infrared Spectroscopy
The goal of this project was to fabricate and test planar arrays of superconducting mixers for the 2-6 THz band. The technology is intended for multi-beam receivers aboard Explorer-class missions and the SOFIA Airborne Observatory. The mixer technology is the superconducting transition-edge microbolometer, which is more commonly known as the Hot-Electron micro-Bolometer (HEB). As originally proposed, two superconducting technologies were to be developed: (1) low-Tc niobium HEBs which could approach quantum-noise-limited sensitivities but require cooling to 2- 4 K, and (2) high-Tc YBCO HEBs with sensitivities 10 times worse but with a relaxed cooling requirement of 30-60 K. The low-Tc devices would be best for astronomy applications on SOFIA, whereas the high-Tc devices would be more suitable for planetary missions using systems without stored cryogens. The work plan called for planar micro-fabrication and initial testing of HEB devices at the NIST Boulder clean-room facility. Subsequent assembly and RF testing of selected devices would be done at the CASA laboratory at U. Colorado. Approximately 1-year after work began on this project, Dr. Eyal Gerecht joined the NIST group, and assumed day-to-day responsibility for Nb-HEB development at NIST outside of micro-fabrication. The YBCO-HEB work was to be guided by Dr. Ron Ono, who was the NIST expert in YBCO technology. Unfortunately, recurrent health problems limited the time Ron could devote to the project in its first year. These problems became aggravated in early 2001, and sadly led to Ron's death in October, 2001. His loss was not only a blow to his friends and associates at NIST, but was mounted by the US superconductivity community at large. With his passing, work on high-Tc HEBs ceased at NIST. There was no one to replace him or his expertise. Our work subsequently shifted solely to Nb-HEB devices. In the sections which follow, our progress in the development of diffusion-cooled Nb-HEB mixers is detailed. To simplify the terminology, these devices will subsequently be called DHEB mixers to distinguish them from phonon-cooled devices (PHEBs).
Betz, A. L.↗