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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Several Microstrip-Based Conductor/Thin Film Ferroelectric Phase Shifter Designs Using (YBa2Cu3O(7 - Delta), Au)/SrTiO3/LaAlO3 Structures

We have designed, fabricated, and tested several novel microstrip-base YBa2Cu3O7-delta/SrTiO3/LaAlO3 (YBCO/STO/LAO) and Au/SrTiO3ALO3 (Au/STO/LAO) phase shifters. The first design consists of eight coupled microstrip phase shifters (CMPS) in series. This design using YBCO achieved a relative insertion phase shift (Delta f) of 484 degrees with a figure of merit of 80 degrees/dB at Vdc = 375 V, 16 GHz, and 40 K. A Delta f of 290 degrees was observed while maintaining the insertion loss below 4.5 dB. At 77 K, a Delta of 420 degrees was obtained for this phase shifter at the same bias and frequency. Both results correspond to an effective coupling length of 0.33 cm. A second compact design, consisting of an Au meander line and a CMPS section was also tested. Of the two samples tested, the best showed a figure of merit of 43 degrees/dB with Delta f = 290 degrees and 6.8 dB loss, at 40 K, 10 GHz and 400 V. Experimental and modeling results on these circuits will be discussed in the context of potential applications.

VanKeuls, F. W.↗
NASA NTRS2003

Interplay Between Thin Film Ferroelectric Composition, Microstructure and Microwave Phase Shifter Performance

One of the keys to successfully incorporating ferroelectric films into Ku-band (12 to 18 GHz) phase shifters is to establish the composition, microstructure, and thickness required to meet the tuning needs, and tailor the film properties to meet these needs. Optimal performance is obtained when the film composition and device design are such that the device performance is limited by odd mode dielectric losses, and these losses are minimized as much as possible while still maintaining adequate tunability. The parameters required to maintain device performance will vary slightly depending on composition, but we can conclude that the best tuning-to-loss figures of merit (K-factor) are obtained when there is minimal variation between the in-plane and out-of-plane lattice parameters, and the full-width half maximum values of the BSTO (002) peaks are less than approximately 0.04 deg. We have observed that for phase shifters in which the ferroelectric crystalline quality and thickness are almost identical, higher losses are observed in films with higher BaISr ratios. The best performance was observed in phase shifters with Ba:Sr = 30:70. The superiority of this composition was attributed to several interacting factors: the B a: Sr ratio was such that the Curie temperature (180 K) was far removed from room temperature, the crystalline quality of the film was excellent, and there was virtually no difference between the inplane and out-of-plane lattice parameters of the film.

Mueller, Carl H.↗
NASA NTRS1990

Control of a GaAs monolithic Ka-band phase shifter using a high-speed optical interconnect

The use of a high-speed optical interconnect in the control of a Ka-band GaAs monolithic phase shifter is described. A 16-b serial control signal was used to modulate the output of a laser transmitter, and the transmitted optical signal was detected and demultiplexed into 16 parallel electrical outputs using a high-speed hybrid GaAs optoelectronic integrated circuit. Four of the parallel output lines were interfaced to the 4-b phase shifter, and high-speed, optically controlled switching of the phase shifter was observed at clock frequencies to 30 MHz using an interferometric technique.

Bhasin, K. B.↗
DOE OSTI2023

Vertical-cavity surface-emitting phase shifter

This study proposes a novel technique for a 2D beam steering system using hybrid plasmonic phase shifters with a cylindrical configuration in a 2D periodic array suitable for LIDAR applications. A nanoscale VCSEP design facilitates a sub-wavelength spacing between individual phase shifters, yielding an expanded field of view and side lobes suppression. The proposed design includes a highly doped sub-micron silicon pillar covered by a thin layer of nonlinear material and an additional conductive metal layer. Characterization of a single VCSEP demonstrated a Free Spectral Range (FSR) of 53.28 ± 2.5 nm and a transmission variation of 3 dB, with V π L equal to 0.075 V-mm.

47 OTHER INSTRUMENTATION↗
NASA NTRS1992

Monolithic mm-wave phase shifter using optically activated superconducting switches

A phase shifter is disclosed having a reference path and a delay path, light sources, and superconductive switches. Each of the superconductive switches is terminated in a virtual short circuit, which may be a radial stub. Switching between the reference path and delayed path is accomplished by illuminating the superconductive switches connected to the desired path, while not illuminating the superconductive switches connected to the other path.

Romanofsky, Robert R.↗
NASA NTRS2006

Slow-Wave Phase Shifters, Based on Thin Ferroelectric Films, for Reflectarray Antennas

We have developed relatively broadband K- and Ka-band phase shifters using synthetic (slow-wave) transmission lines employing coupled microstripline "varactors". The tunable coupled microstripline circuits are based on laser ablated BaSrTiO films on lanthanum aluminate substrates. A model and design criteria for these novel circuits will be presented, along with measured performance including anomalous phase delay characteristics. The critical role of phase shifter loss and transient response in reflectarray antennas will be emphasized.

Romanofsky, Robert R.↗
NASA NTRS1991

Comparative study of bolometric and non-bolometric switching elements for microwave phase shifters

The performance of semiconductor and high critical temperature superconductor switches is compared as they are used in delay-line-type microwave and millimeter-wave phase shifters. Such factors as their ratios of the off-to-on resistances, parasitic reactances, power consumption, speed, input-to-output isolation, ease of fabrication, and physical dimensions are compared. Owing to their almost infinite off-to-on resistance ratio and excellent input-to-output isolation, bolometric superconducting switches appear to be quite suitable for use in microwave phase shifters; their only drawbacks are their speed and size. The SUPERFET, a novel device whose operation is based on the electric field effect in high critical temperature ceramic superconductors is also discussed. Preliminary results indicate that the SUPERFET is fast and that it can be scaled; therefore, it can be fabricated with dimensions comparable to semiconductor field-effect transistors.

Tabib-Azar, Massood↗
NASA NTRS1991

Comparative study of bolometric and non-bolometric switching elements for microwave phase shifters

The performance of semiconductor and high critical temperature superconductor switches is compared as they are used in delay-line-type microwave and millimeter-wave phase shifters. Such factors as their ratios of the off-to-on resistances, parasitic reactances, power consumption, speed, input-to-output isolation, ease of fabrication, and physical dimensions are compared. Owing to their almost infinite off-to-on resistance ratio and excellent input-to-output isolation, bolometric superconducting switches appear to be quite suitable for use in microwave phase shifters; their only drawbacks are their speed and size. The SUPERFET, a novel device whose operation is based on the electric field effect in high critical temperature ceramic superconductors is also discussed. Preliminary results indicate that the SUPERFET is fast and that it can be scaled; therefore, it can be fabricated with dimensions comparable to semiconductor field-effect transistors.

Tabib-Azar, Massood↗
NASA NTRS2011

A Truncated Waveguide Phase Shifter

The design, fabrication and performance of a simple phase shifter based upon truncated circular and square waveguides is presented. An emphasis is placed upon validation of simple analytical formulae that describe the propagation properties of the structure. A test device is prototyped at approximately 40GHz; however, the concepts explored can be directly extended to millimeter and submillimeter applications.

Lourie, Nathan P.↗
NASA NTRS1991

Phase shifter technology assessment - Prospects and applications

Capabilities and limitations of MMIC phase shifter technology at microwave and millimeter wave frequencies are reviewed. MMIC-based phase arrays make it possible to integrate active elements at the array face, i.e., to incorporate transmit power amplifiers and/or low noise amplifiers at each antenna element. Active elements make it possible to increase power efficiency and reliability and provide graceful degradation. Monolithic integration of the various transmit/receive functions including phase shifting is considered to be feasible through at least the lower millimeter-wave frequency range (about 30-100 GHz). MMIC integration also allows more flexibility in array design including those that are intended for airborne conformal applications.

Sokolov, Vladimir↗
NASA NTRS2004

Broadband, Low-Loss Phase Shifters Based on Thin Ferroelectric Films

Several different types of microwave transmission line phase shifters based on thin ferroelectic films have been developed at the NASA Glenn Research Center. These include a series of coupled microstrip lines, slotline incorporating Marchand balms, odd-mode coplanar strips, and hybrid devices incorporating a switch to toggle the output termination between an open and virtual short circuit. A review of the theory of operation of each of these devices will be presented along with measured performance. Also, devices of the first variety have been subjected to total dose (proton) radiation exposure using a 200 MeV beam energy with a total dose up to nearly 1 kRad (Si). Results of these radiation tests will be discussed.

Romanofsky, Robert↗
NASA NTRS2010

Thin-Film Ferro Electric-Coupled Microstripline Phase Shifters With Reduced Device Hysteresis

This work deals with the performance of coupled microstripline phase shifters (CMPS) fabricated using BaxSr 1 -xTiO 3 (BST) ferroelectric thin films. The CMPS were fabricated using commercially available pulsed laser deposition BST films with Ba:Sr ratios of 30:70 and 20:80. Microwave characterization of these CMPS was performed at upper Kuband frequencies, particularly at frequencies near 16 and 18 GHz. X-ray diffraction studies indicate that the 30:70 films exhibit almost a 1:1 ratio between the in-plane and out-of-plane lattice parameters, suggesting that their cubics create strain -free films suitable for producing CMPS devices with reduced hysteresis in the paraelectric state. The quality of performance of the CMPS was studied based on their relative phase shift and insertion loss within the DC bias range of 0 to 400 V (i.e., E-field ranges within 0 to 53 V/micron). The performance of the CMPS was tested as a function of temperature to investigate their operation in the paraelectric, as well as in the ferroelectric, state (i.e., above and below the Curie temperature, respectively). The novel behavior discussed here is based on the experimental observation of the CMPS. This behavior, observed for the aforementioned cation ratio, highlights the relevance of good crystalline structure for high-quality CMPS.

Miranda, Felix A.↗
NASA NTRS2000

Finite Ground Coplanar Waveguide Shunt MEMS Switches for Switched Line Phase Shifters

Switches with low insertion loss and high isolation are required for switched line phase shifters and the transmit/receive switch at the front end of communication systems. A Finite Ground Coplanar (FGC) waveguide capacitive, shunt MEMS switch has been implemented on high resistivity Si. The switch has demonstrated an insertion loss of less than 0.3 dB and a return loss greater than 15 dB from 10 to 20, GHz. The switch design, fabrication, and characteristics are presented.

Ponchak, George E.↗