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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Detailed investigation of electrical and optical properties of textured n-type and roughened p-type tunnel oxide passivated contacts for screen-printed double-side passivated contact silicon solar cell application

Here, this paper presents detailed characterization and analyses of the optical, electrical, and contact properties of a 35 nm phosphorus-doped (n-type) polysilicon (poly-Si) and a 250 nm boron-doped (p-type) poly-Si deposited respectively on textured and roughed surface. These layers could be applied respectively to the front and rear sides of an n-type Si to produce back junction bifacial screen-printed double-side tunnel oxide passivated contacts (DS-TOPCon) solar cells. Optical and device modeling revealed a short circuit current density loss of 1.5 mA/cm 2 and 0.5 mA/cm 2 due to absorption in the front n-TOPCon and rear side p-TOPCon layers, respectively. The passivation and contact properties including metalized and unmetallized recombination current density (J 0 ), as well as contact resistivity, were determined as a function of contact firing temperature in the range of 700~800°C. The passivation quality of the front thin n-TOPCon was found to deteriorate with increased firing temperature while the rear thick p-TOPCon improved. The study showed that the simulated contact firing at 730°C resulted in the best unmetallized double-side TOPCon precursor, with an excellent implied open-circuit voltage of 730 mV and implied fill factor of ~86 %. However, the metalized J0 increased and contact resistivity decreased monotonically with the increase in the firing temperature. The 2D device simulations revealed that these layers can produce screen-printed DS-TOPCon cells with an efficiency of ~22.5 %. Solar cell modeling also showed that the DS-TOPCon solar cell efficiency can reach 24.1 % by decreasing the n-TOPCon thickness to 20 nm and lowering the full area metalized J 0 to ~100 mA/cm 2 .

14 SOLAR ENERGY↗
DOE OSTI2023

Characterizing Density and Spatial Distribution of Trap States in Ta 3 N 5 Thin Films for Rational Defect Passivation

Tantalum nitride (Ta 3 N 5 ) has gained significant attention as a potential photoanode material, yet it has been challenged by material quality issues. Defect-induced trap states are detrimental to the performance of any semiconductor material. Beyond influencing the performance of Ta 3 N 5 films, defects can also accelerate the degradation in water during desired electrochemical applications. Defect passivation has provided an enormous boost to the development of many semiconductor materials but is currently in its infancy for Ta 3 N 5 . This is in part due to a lack of experimental understanding regarding the spatial and energetic distribution of trap states throughout Ta 3 N 5 thin films. Here, we employ drive-level capacitance profiling (DLCP) to experimentally resolve the spatial and energetic distribution of trap states throughout Ta 3 N 5 thin films. The density of deeper energetic traps is found to reach ∼2.5 to 6 × 10 22 cm –3 at the interfaces of neat Ta 3 N 5 thin films, over an order of magnitude greater than the bulk. In addition to the spatial profile of deep trap states, we report neat Ta 3 N 5 thin films to be highly n-type in nature, owning a free carrier density of ∼9.74 × 10 17 cm –3 . This information, coupled with the present understanding of native oxide layers on Ta 3 N 5 , has facilitated the rational design of a targeted passivation strategy that simultaneously provides a means for catalyst immobilization. Loading catalyst via silatrane moieties suppresses the density of defects at the surface of Ta 3 N 5 thin films by two orders of magnitude, while also reducing the free carrier density of films by over one order of magnitude, effectively dedoping the films to ∼2.40 × 10 16 cm –3 . The surface passivation of Ta 3 N 5 films translates to suppressed defect-induced trapping and recombination of photoexcited carriers, as determined through absorption, photoluminescence, and transient photovoltage. Here, this illustrates how developing a deeper understanding of the distribution and influence of defects in Ta 3 N 5 thin films has the potential to guide future works and ultimately accelerate the integration and development of high-performance Ta 3 N 5 thin film devices.

defect passivation↗
DOE OSTI2023

Mechanism of Hydrogen Passivation in Passivated Contact Si Solar Cells

In this abstract, we discuss the mechanism of hydrogen passivation on symmetrical n-Si/ultra-thin SiO2/polySi structures. The hydrogen was introduced from different hydrogen-containing dielectric layers (AlOx:H and SiNx:H and their stacks), as well as by forming gas anneal (FGA). The effusion of hydrogen both from the dielectric layers and in the underlying poly-Si was explored using a quadrupole mass spectrometer (QMS) and FTIR spectroscopy. We show that the strength of hydrogen bonds depend on the deposition technique as well as hydrogenation mechanism. While a PECVD SiNx:H loses hydrogen at a peak temperature of ~450 degrees C, LPCVD SiNx:H, although having less hydrogen compared to PECVD, effuses at a peak temperature of ~850 degrees C. This becomes important to maintain passivation of passivated contacts after firing of metal contacts at high temperatures. On the other hand, it has been observed that SiNx:H provides larger amount of hydrogen to poly-Si after FGA compared to FGA treated AlOx:H, which acts as a capping layer and helps in retaining the hydrogen up to higher temperatures.

hydrogen bonding configuration↗
DOE OSTI2024

Field-Effect Passivation by Desired Charge Injection into SiNx Passivation in Crystalline-Silicon Solar Cells

Effective surface passivation is a necessity for high efficiency crystalline silicon solar cells. The field effect passivation of p-type surfaces is typically accomplished using aluminum oxide (Al 2 O 3 ) which contains a high density of negative fixed charges. The accumulation layer formed by the negative charges prevents surface recombination loss of photo-generated carriers by repelling minority carriers (electrons) from the surface with interface state recombination centers. However, the Al 2 O 3 surface passivation technology has two key concerns of cost and safety associated with the precursor material tri-methyl-aluminum (TMA).

14 SOLAR ENERGY↗
DOE OSTI2021

Effective Dielectric Passivation Scheme in Area-Selective Front/Back Poly-Si/SiOx Passivating Contact Solar Cells

Explored different dielectric passivation schemes on lifetime samples after removing poly-Si completely. Showed that SiNx/Al2O3 had the best passivation properties on SiOx/n+ c-Si in diffused surface. Applied SiNx/Al2O3 stack on poly-Si/SiOx passivating contact device and showed large improvement in Jsc, with best device efficiency of 21.8%. Future work: CV measurement of dielectric stacks to obtain Qf and Dit.

dielectric↗
DOE OSTI2022

All-perovskite tandem solar cells with improved grain surface passivation

All-perovskite tandem solar cells hold the promise of surpassing the efficiency limits of single-junction solar cells; however, until now, the best-performing all-perovskite tandem solar cells have exhibited lower certified efficiency than have single-junction perovskite solar cells. A thick mixed Pb–Sn narrow-bandgap subcell is needed to achieve high photocurrent density in tandem solar cells, yet this is challenging owing to the short carrier diffusion length within Pb–Sn perovskites. Here we develop ammonium-cation-passivated Pb–Sn perovskites with long diffusion lengths, enabling subcells that have an absorber thickness of approximately 1.2 μm. Molecular dynamics simulations indicate that widely used phenethylammonium cations are only partially adsorbed on the surface defective sites at perovskite crystallization temperatures. The passivator adsorption is predicted to be enhanced using 4-trifluoromethyl-phenylammonium (CF3-PA), which exhibits a stronger perovskite surface-passivator interaction than does phenethylammonium. By adding a small amount of CF3-PA into the precursor solution, we increase the carrier diffusion length within Pb–Sn perovskites twofold, to over 5 μm, and increase the efficiency of Pb–Sn perovskite solar cells to over 22%. Here, we report a certified efficiency of 26.4% in all-perovskite tandem solar cells, which exceeds that of the best-performing single-junction perovskite solar cells. Encapsulated tandem devices retain more than 90% of their initial performance after 600 h of operation at the maximum power point under 1 Sun illumination in ambient conditions.

14 SOLAR ENERGY↗
DOE OSTI2020

Isolating p- and n-Doped Fingers With Intrinsic Poly-Si in Passivated Interdigitated Back Contact Silicon Solar Cells

Polycrystalline silicon on silicon oxide (poly-Si/SiO x ) passivating contacts enable ultra high efficiency interdigitated back contact silicon solar cells. To prevent shunt between n- and p-type doped fingers, an insulating region is required between them. We evaluate the use of intrinsic poly Si for this isolation region. Interdigitated fingers were formed by plasma deposition of doped hydrogenated amorphous silicon through mechanically aligned shadow masks, on top of a full-area intrinsic amorphous silicon layer. High temperature annealing then crystallized the a-Si:H to poly Si and drove in the dopants. Two mechanisms were identified which cause contamination of the intrinsic poly Si gap during processing. During deposition of doped fingers, we show using secondary ion mass spectrometry and conductivity measurements that the intrinsic gap becomes contaminated by doped a-Si:H tails several nanometers thick to concentrations of ~10 20 cm -3 . Another source of contamination occurs during high-temperature annealing, where dopants desorb from doped regions and readsorb onto intrinsic a Si:H. Both pathways reduce the resistivity of the intrinsic gap from ~10 5 Ω·cm to ~10 -1 Ω·cm. We show that plasma etching of the a-Si:H surface before crystallizing with a capping layer can eliminate the contamination of the intrinsic poly-Si, maintaining a resistivity of ~10 5 Ω·cm. Lastly, this demonstrates masked plasma deposition as a dopant patterning method for Si solar cells.

14 SOLAR ENERGY↗
DOE OSTI2025

Degradation and Accelerated Recovery of Surface Passivation in n+ Poly-Si/SiOx Passivating Contacts for TOPCon Solar Cells

We studied the surface degradation and recovery of fired poly-Si/SiOx passivating contacts during subsequent dark and illuminated annealing. We report on an industrially-viable path for accelerated recovery of surface passivation. The degradation is influenced by the type of doping in the poly-Si. Phosphorus doped n+ poly-Si/SiOx contacts show degradation followed by recovery, undoped poly-Si/SiOx contacts only show recovery during annealing. Boron doped p+ poly-Si/SiOx contacts show neither degradation nor improvement with annealing. Both degradation and recovery are thermally-activated processes and are completely reversible and cyclic in nature. The activation energy of degradation and recovery in dark for n+ poly-Si/SiOx contacts are 1.27 and 1.33 eV respectively. Dark annealing at elevated temperatures is effective for complete recovery but takes a long time (~30 min at 350 degrees C) due to higher activation energies. Annealing under 7.5 Suns of illumination lowers the activation energy for degradation and recovery to 0.88 and 0.90 eV, respectively. Using this data, we have developed an industrially viable post-firing treatment for accelerated recovery of TOPCon cells by annealing them at elevated temperatures and under intense illumination for a few minutes.

14 SOLAR ENERGY↗
DOE OSTI2023

Design, development and analysis of large-area industrial silicon solar cells featuring a full area polysilicon based passivating contact on the rear and selective passivating contacts on the front

We present SERIS’ biPoly™ technology platform on large-area (M2), n-type rear-junction silicon solar cells featuring selective poly-Si/SiOx based passivated contacts on the front side and full-area poly-Si/SiOx contacts on the rear. The selective poly-Si ‘fingers’ are formed using an industrial ink-jet masking process followed by wet-chemical etching. The metal contacts are formed by an industrial screen-printing process using high-temperature fire-though metal pastes. We obtain excellent passivation on the front and rear surfaces, resulting in iVoc values between 720 mV and 730 mV on unmetallized solar cells. After high-temperature metallization, we achieve 22% efficiency on solar cells with selective poly-Si fingers on the front. We further develop the model for biPoly™ solar cells and with the help of a detailed loss analysis and simulations, identify the various loss components to identify the device modifications required for efficiency improvements.

36 MATERIALS SCIENCE↗
NASA NTRS2020

Passive Thermal Coating Observatory Operating in Low-Earth Orbit (PATCOOL) – Cubesat Design to Test Passive Thermal Coatings in Space

The PATCOOL is a NASA sponsored, University of Florida developed 3U Cu-beSat meant to investigate the feasibility of using a cryogenic selective surface coating as a new, more efficient way of passively cooling components in space. Initial tests on the ground demonstrate that this coating should provide a much higher reflectance of the Sun’s irradiant power than any existing coating, while still providing far-infrared power emission. The ultimate validation of this tech-nology requires on-orbit testing. PATCOOL hosts a 4-sample housing, with the samples shaped as thin cylinders (coin-like). Two samples are coated with state-of-the-art material, while the other pair uses the new coating to be evaluated. The temperatures of all samples during the mission (minimum 72 hours of data col-lection) are measured via thermistors. The samples are connected via thin Kevlar strings to the housing, to minimize heat transfer. The housing is designed to shield the samples from Earth’s thermal radiation, and the CubeSat is attitude stabilized and controlled via a gravity gradient boom, magnetorquers and a reaction wheel set. Thermal Desktop simulations show PATCOOL’s ability to thermally isolate the samples from heat exchanges other than with Sun and deep space, thanks to its thermal design and the chosen attitude profile.

Ojeda, Carlos↗