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At least 37 records · Page 2

Effective Dielectric Passivation Scheme in Area-Selective Front/Back Poly-Si/SiOx Passivating Contact Solar Cells

Explored different dielectric passivation schemes on lifetime samples after removing poly-Si completely. Showed that SiNx/Al2O3 had the best passivation properties on SiOx/n+ c-Si in diffused surface. Applied SiNx/Al2O3 stack on poly-Si/SiOx passivating contact device and showed large improvement in Jsc, with best device efficiency of 21.8%. Future work: CV measurement of dielectric stacks to obtain Qf and Dit.

dielectric↗

All-perovskite tandem solar cells with improved grain surface passivation

All-perovskite tandem solar cells hold the promise of surpassing the efficiency limits of single-junction solar cells; however, until now, the best-performing all-perovskite tandem solar cells have exhibited lower certified efficiency than have single-junction perovskite solar cells. A thick mixed Pb–Sn narrow-bandgap subcell is needed to achieve high photocurrent density in tandem solar cells, yet this is challenging owing to the short carrier diffusion length within Pb–Sn perovskites. Here we develop ammonium-cation-passivated Pb–Sn perovskites with long diffusion lengths, enabling subcells that have an absorber thickness of approximately 1.2 μm. Molecular dynamics simulations indicate that widely used phenethylammonium cations are only partially adsorbed on the surface defective sites at perovskite crystallization temperatures. The passivator adsorption is predicted to be enhanced using 4-trifluoromethyl-phenylammonium (CF3-PA), which exhibits a stronger perovskite surface-passivator interaction than does phenethylammonium. By adding a small amount of CF3-PA into the precursor solution, we increase the carrier diffusion length within Pb–Sn perovskites twofold, to over 5 μm, and increase the efficiency of Pb–Sn perovskite solar cells to over 22%. Here, we report a certified efficiency of 26.4% in all-perovskite tandem solar cells, which exceeds that of the best-performing single-junction perovskite solar cells. Encapsulated tandem devices retain more than 90% of their initial performance after 600 h of operation at the maximum power point under 1 Sun illumination in ambient conditions.

14 SOLAR ENERGY↗

Degradation and Accelerated Recovery of Surface Passivation in n+ Poly-Si/SiOx Passivating Contacts for TOPCon Solar Cells

We studied the surface degradation and recovery of fired poly-Si/SiOx passivating contacts during subsequent dark and illuminated annealing. We report on an industrially-viable path for accelerated recovery of surface passivation. The degradation is influenced by the type of doping in the poly-Si. Phosphorus doped n+ poly-Si/SiOx contacts show degradation followed by recovery, undoped poly-Si/SiOx contacts only show recovery during annealing. Boron doped p+ poly-Si/SiOx contacts show neither degradation nor improvement with annealing. Both degradation and recovery are thermally-activated processes and are completely reversible and cyclic in nature. The activation energy of degradation and recovery in dark for n+ poly-Si/SiOx contacts are 1.27 and 1.33 eV respectively. Dark annealing at elevated temperatures is effective for complete recovery but takes a long time (~30 min at 350 degrees C) due to higher activation energies. Annealing under 7.5 Suns of illumination lowers the activation energy for degradation and recovery to 0.88 and 0.90 eV, respectively. Using this data, we have developed an industrially viable post-firing treatment for accelerated recovery of TOPCon cells by annealing them at elevated temperatures and under intense illumination for a few minutes.

14 SOLAR ENERGY↗

Design, development and analysis of large-area industrial silicon solar cells featuring a full area polysilicon based passivating contact on the rear and selective passivating contacts on the front

We present SERIS’ biPoly™ technology platform on large-area (M2), n-type rear-junction silicon solar cells featuring selective poly-Si/SiOx based passivated contacts on the front side and full-area poly-Si/SiOx contacts on the rear. The selective poly-Si ‘fingers’ are formed using an industrial ink-jet masking process followed by wet-chemical etching. The metal contacts are formed by an industrial screen-printing process using high-temperature fire-though metal pastes. We obtain excellent passivation on the front and rear surfaces, resulting in iVoc values between 720 mV and 730 mV on unmetallized solar cells. After high-temperature metallization, we achieve 22% efficiency on solar cells with selective poly-Si fingers on the front. We further develop the model for biPoly™ solar cells and with the help of a detailed loss analysis and simulations, identify the various loss components to identify the device modifications required for efficiency improvements.

36 MATERIALS SCIENCE↗

Passive Thermal Coating Observatory Operating in Low-Earth Orbit (PATCOOL) – Cubesat Design to Test Passive Thermal Coatings in Space

The PATCOOL is a NASA sponsored, University of Florida developed 3U Cu-beSat meant to investigate the feasibility of using a cryogenic selective surface coating as a new, more efficient way of passively cooling components in space. Initial tests on the ground demonstrate that this coating should provide a much higher reflectance of the Sun’s irradiant power than any existing coating, while still providing far-infrared power emission. The ultimate validation of this tech-nology requires on-orbit testing. PATCOOL hosts a 4-sample housing, with the samples shaped as thin cylinders (coin-like). Two samples are coated with state-of-the-art material, while the other pair uses the new coating to be evaluated. The temperatures of all samples during the mission (minimum 72 hours of data col-lection) are measured via thermistors. The samples are connected via thin Kevlar strings to the housing, to minimize heat transfer. The housing is designed to shield the samples from Earth’s thermal radiation, and the CubeSat is attitude stabilized and controlled via a gravity gradient boom, magnetorquers and a reaction wheel set. Thermal Desktop simulations show PATCOOL’s ability to thermally isolate the samples from heat exchanges other than with Sun and deep space, thanks to its thermal design and the chosen attitude profile.

Ojeda, Carlos↗

Hydrogenation and C-S bond activation pathways in thiophene and tetrahydrothiophene reactions on sulfur-passivated surfaces of Ru, Pt, and Re nanoparticles

Thiophene-H2 reactions proceed via sulfur removal and hydrogenation routes on dispersed metal nanoparticles that become decorated by refractory S-adlayers during catalysis. The identity and kinetic relevance of the required elementary steps are described here based on rates measured at S-chemical potentials set by H2S/H2 ratios similar to those prevalent during practical catalysis on Re, ReSx, Ru, and Pt catalysts. Free energies for S adatom formation (from H2S decomposition and H2 evolution) are strongly exothermic (< -50 kJ mol-1 on Pt(111) and < -150 kJ mol-1 on Re and Ru(0001)), but strong repulsions between S adatoms cause adsorption free energies to increase significantly with coverage on all three surfaces, preventing complete monolayer formation. These adlayers, composed of unreactive S-atoms (S') that cover 1/3–2/3 ML leave residual interstitial spaces (*) that bind S-atoms (S*), intermediates, and transition states reversibly, as required for catalytic turnovers. The number and binding properties of these interstices depend on the identity and chemical state of the nanoparticle bulk phase, which influences S'-binding and coverages and cause large differences in direct desulfurization and hydrogenation turnover rates (per exposed metal atom) on dispersed Re, ReSx, Ru, and Pt. The identity and kinetic relevance of elementary steps for desulfurization (to C4¬ hydrocarbons) and hydrogenation (to tetrahydrothiophene; THT) are similar among these catalysts; they involve the kinetically-relevant formation of a thiophene-derived intermediate (monohydrothiophene on Re and ReSx; dihydrothiophene on Ru and Pt) that either cleaves its C-S bond or “over-hydrogenates” to THT in one surface sojourn. THT then undergoes C-S bond cleavage in secondary reactions that correct such over-hydrogenation to form the more unsaturated species that cleave C-S bonds. THT/C4 product ratios are insensitive to H2S/H2 ratios and thiophene pressure, even though active interstitial spaces are covered by kinetically-detectable coverages of S* and thiophene; therefore, primary and secondary reactions must involve the same active surfaces. The observed increase in THT/C4 ratios with H2 pressure shows that THT formation transition states involve a larger number of H-atoms than for C-S cleavage. The requirement for bound species with intermediate unsaturation (between THT and thiophene) for C-S bond cleavage is reminiscent of the H-shuttling required in C-C and C-O hydrogenolysis, reactions that involve the partial dehydrogenation of alkanes and alkanols, respectively, to weaken such bonds and to increase the formation entropy of the relevant transition states via the evolution of H2(g). These mechanistic details challenge prevalent paradigms about different site requirements for hydrogenation and desulfurization pathways and about how metal-sulfur bond energies act as descriptors of reactivity; in fact, such binding energies merely act to define the refractory S-adlayers that enable the formation of weakly-binding interstices that reversibly bind intermediates and transition states, thus allowing catalytic turnovers.

Yik, Edwin↗