The effects of sub-threshold electron irradiation on surface recombination in Ge and Si.
Subthreshold electron irradiation effects on surface recombination properties of n- and p-type germanium and silicon crystals
SILICON↗
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Proton Damage to Silicon as a Function of Proton Energy
Proton damage to n and p-type silicon crystals as function of proton energy using hall effect
Breckenridge, R. A.↗
Evidence of hole-optical-phonon interaction in degenerate silicon in tunneling measurements.
Hole-optical-phonon interaction in degenerate p-type Si deduced from tunneling measurements
Wolf, E. L.↗
Epitaxial growth of GaSb from the liquid phase.
Epitaxial growth of n-type layers of gallium antimonide from liquid phase on p-type substrates, discussing growing process applications and advantages
Burns, J. W.↗
Temperature coefficient of resistivity of silicon and germanium near room temperature.
Temperature coefficients for resistivity of n- and p-type germanium and silicon near room temperature
Brewer, F. H.↗
Galvanomagnetic investigation of the metal-non- metal transition in silicon.
Metal-nonmetal transition in n- and p-type Si from high magnetic field galvanometric measurements, noting abnormally large magnetoresistance accompanied by Hall coefficient increase
Bernard, W.↗
Improved method of fabricating planar gallium arsenide diodes
Improved method fabricates electroluminescent planar P-N gallium arsenide diodes. GaAs is masked with silicon monoxide to allow P-type impurities to be diffused into unmasked portions of GaAs to form P-N junctions.
Roy, M. M.↗
Effect of 50 Mev electrons of the ultimate Fermi level in germanium.
Fermi level in n- and p-type Ge after irradiation by 50 Mev electrons determined by temperature dependence of carrier concentration
Bohlke, W. H.↗
Beryllium as an acceptor in silicon.
Strong p-type conductivity of silicon doped with beryllium by thermal diffusion, giving electrical and optical measurements
Franks, R. K.↗
Copper-titanium eutectic alloy improves electrical and mechanical contact to silicon carbide
Contact preparation at low temperatures is possible with the use of a copper-titanium eutectic alloy. Contacts formed with this alloy are ohmic on p-type silicon carbide and rectifying on n-type.
Shier, J. S.↗
Aluminum-silicon eutectic alloy improves electrical and mechanical contact to silicon carbide
Alloy contact layer is made at relatively low temperature and has good wetting characteristics. Contacts adhere well to silicon carbide surface, penetrating about 300 to 500 angstroms into it. Contacts are ohmic on p-type silicon carbide and blocking on n-type.
Shier, J. S.↗
P-n junctions formed in gallium antimonide
Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride. Temperatures as low as 400 degrees C are required.
Clough, R.↗
Investigation of the detectivity of radiation- produced defect levels in n and p type silicon and germanium Semiannual progress report
Black body responsivity data of n-type and p-type silicon
Mattauch, R. J.↗
Electrochemical behavior of the boron anode in aqueous solutions
Electrochemical oxidation of p-type boron anode in aqueous solutions
Del Duca, B. S.↗
Diodes in silicon carbide by ion implantation
N-type layer formation with ion implanted nitrogen or Sb in p-type alpha-SiC, evaluating electrical characteristics, discussing junction devices formed
Dunlap, H. L.↗
Electrochemical behavior of the boron anode in aqueous solutions
Electrochemical oxidation of p-type boron anode in aqueous solutions, using galvanostatic technique
Del Duca, B. S.↗
Method of changing the conductivity of vapor deposited gallium arsenide by the introduction of water into the vapor deposition atmosphere Patent
Water content in vapor deposition atmosphere for forming n-type and p-type junctions of zinc doped gallium arsenide
Ellis, S. G.↗
Hybrid TE panel test results
Test results are presented for a nine couple (3 x 3 array) thermoelectric panel of hybrid thermocouples. In the hybrid couple, a hollow cylinder of p-type Si-Ge is used to encapsulate a segmented PbTe/Si-Ge n-leg. The hybrid couple is predicted to offer a 10- to 15-percent improvement in performance relative to all Si-Ge couples. The efficiency, output power, and internal resistance of the panel as well as the resistances of the individual hybrid couples are presented as a function of test time covering a period of more than 2600 hours. Initial test results indicated hybrid couple performance consistent with design predictions. Extraneous resistance ranged from 20 to 25% of the hybrid couple thermoelectric resistance.
Bifano, W. J.↗