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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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236 records · Page 2

Programmable Digital Devices used in Advanced Reactors

This paper introduces the concepts of common cause failure, diversity, and defense-in-depth used by the nuclear industry to analyze resilience in reactors. A survey of publicly traded and private companies building advanced reactors and their licensing status is presented. Safety and non-safety systems found in the NuScale Power design are summarized and the likely hardware and software categories used by those systems are enumerated. The importance of industry partners is highlighted. This paper also identifies an alternate path forward without industry partners to advance the knowledge needed to use artificial intelligence to analyze HBOMs and SBOMs to better understand reactor resiliency.

cybersecurity

A Predictive Bubble Point Pressure Model for Porous Liquid Acquisition Device Screens

This article presents a simplified model for porous screen channel liquid acquisition devices based on a maximum bubble point pressure method from Adamson and Gast (1997). To validate the model, three 304 stainless steel (325 × 2300, 450 × 2750, and 510 × 3600) mesh samples were tested in methanol, acetone, isopropyl alcohol, and water. Screen pores are estimated based on analysis from scanning electron microscopy, historical data, and current test data. Results show that the bubble point pressure is proportional to the surface tension of the fluid only when accounting for nonzero contact angles. The previous assumption that bubble point pressure scales inversely with effective pore diameter is shown to be invalid, as the second finest 450 × 2750 produced the highest bubble point of the three screens. The simplified bubble point model can be used to make predictions for any pure fluid when pore diameters are based on bubble point tests and not SEM analysis.

Liquid Acquisition Device

Battery testing device

A battery testing device is described for testing the cells of a multiple-cell battery, the battery having a cover plate with access holes to provide access to the connecting straps between cells. A panel of probe assembly receiving holes is located to correspond to the location of the access holes when the panel is positioned on top of the battery. A probe assembly is positioned within each probe assembly receiving hole, with a spring biased electrically conductive plunger to make electrical contact with the connecting strap through the corresponding access hole when the panel is pushed towards the top of the battery.

Boshers, W. A.

Influential Factors for Liquid Acquisition Device Screen Selection for Cryogenic Propulsion Systems

This paper presents the influential factors which govern screen selection for liquid acquisition devices (LADs) operating in microgravity conditions for future in-space cryogenic propulsion engines and cryogenic propellant depots. Space flight requirements, which include mass flow rate, acceleration level and direction, and thermal environment, dictate screen selection for a particular mission. The five influential factors include bubble point pressure, flow-through-screen pressure drop, wicking rate, screen compliance, and material compatibility. Governing equations and analytical models for these parameters are developed from first principles. A comprehensive survey of the historical data on coarser LAD meshes over four decades of work is conducted, and liquid hydrogen data for finer Dutch Twill meshes (325 x 2300, 450 x 2750, 510 x 3600) from recently concluded experiments is also presented to validate analytical models. Each of these parameters is measurable from ground based tests, making it facile to predict flight system performance. Therefore analytical models in this paper will be valuable for future LAD designs for both cryogenic and storable propulsion systems. Additionally, analysis will be given on the impact of the factors on liquid hydrogen systems.

Fuel Depot

Theory of stimulated and spontaneous axion scattering.

We present a theory for nonlinear, resonant excitation of dynamical axions by counterpropagating electromagnetic waves in materials that break both 𝒫 and 𝒯 symmetries. We show that dynamical axions can mediate an exponential growth in the amplitude of the lower frequency (Stokes) beam. We also discuss spontaneous generation of a counterpropagating Stokes mode, enabled by resonant amplification of quantum and thermal fluctuations in the presence of a single pump laser. Remarkably, the amplification can be orders of magnitude larger than that obtained via stimulated Brillouin and Raman scattering processes, and can be modulated with the application of external magnetic fields, making stimulated axion scattering promising for optoelectronics applications.

Smith, M.

Screen Channel Liquid Acquisition Device Outflow Tests in Liquid Hydrogen

This paper presents experimental design and test results of the recently concluded 1-g inverted vertical outflow testing of two 325x2300 full scale liquid acquisition device (LAD) channels in liquid hydrogen (LH 2 ). One of the channels had a perforated plate and internal cooling from a thermodynamic vent system (TVS) to enhance performance. The LADs were mounted in a tank to simulate 1-g outflow over a wide range of LH 2 temperatures (20.3 – 24.2 K), pressures (100 – 350 kPa), and flow rates (0.010 – 0.055 kg/s). Results indicate that the breakdown point is dominated by liquid temperature, with a second order dependence on mass flow rate through the LAD. The best performance is always achieved in the coldest liquid states for both channels, consistent with bubble point theory. Higher flow rates cause the standard channel to break down relatively earlier than the TVS cooled channel. Both the internal TVS heat exchanger and subcooling the liquid in the propellant tank are shown to significantly improve LAD performance.

Fuel Depot

A Transient Hydrodynamic Model of Screen Channel Liquid Acquisition Devices for In-Space Cryogenic Propellant Management

Screen channel liquid acquisition devices (LADs) will play a crucial role in future deep space travel. It is essential that vapor-free delivery of propellants during tank-to-tank transfer is ensured to maximize yield from storage tanks and prevent potential combustion instabilities. The screen channel LAD utilizes a fine screen wire mesh that can separate phases in a low Bond number (i.e. microgravity) environment using surface tension forces. This study presents the development and verification of a new model for transient screen compliance, one of the influential factors for screen channel LAD design. Screen compliance is crucial during LAD channel outflow transients because the slight deflection of the screen can provide needed mass to satisfy rapid outflow demands and reduce the pressure difference across the screen. The model is successfully verified against CFD simulations. In addition, the characteristic speed for the governing screen compliance equations is derived which allows for numerical stability criteria to be established. As shown in this study, the transient maximum pressure difference across the screen can greatly exceed the steady state maximum pressure difference across the screen in many cases.

Hydrodynamics Simulations

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

Abstract Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material characteristics can enable more robust and efficient devices, particularly in scenarios involving high power, high frequency, and extreme environmental conditions. Despite the promising outlook, the physics of UWBG materials remains inadequately understood, leading to a notable gap between theoretical predictions and experimental device behavior. To address this knowledge gap and pinpoint areas where further research can have the most significant impact, this review provides an overview of the progress and limitations in U/WBG materials. The review commences by discussing Gallium Nitride, a more mature WBG material that serves as a foundation for establishing fundamental concepts and addressing associated challenges. Subsequently, the focus shifts to the examination of various UWBG materials, including AlGaN/AlN, Diamond, and Ga 2 O 3 . For each of these materials, the review delves into their unique properties, growth methods, and current state-of-the-art devices, with a primary emphasis on their applications in power and radio-frequency electronics.

Materials Science

Kinetic control of phase evolution and defect-mediated recombination in AACVD-grown copper antimony sulphide thin films

Copper antimony sulphide (CAS) is a multinary chalcogenide semiconductor in which small deviations from stoichiometry can drive phase competition and strong defect-mediated modulation of optoelectronic properties. However, the systematic roles of copper precursor fraction and deposition time in governing phase evolution, off-stoichiometry, and recombination dynamics in aerosol-assisted chemical vapour deposition (AACVD)-grown undoped CAS thin films remain insufficiently understood. In this work, undoped CAS thin films were deposited by AACVD using Cu(dedtc)2 and Sb(dedtc)3 single-source precursors at 550 °C and a carrier gas flow rate of 150 sccm, while the Cu(dedtc)2 mole fraction (x = 0.15 – 0.55) and deposition time (1 – 2 hours) were systematically varied to probe how growth kinetics influence phase composition, microstructure, and defect-mediated optical properties without post-deposition annealing or extrinsic doping. Increasing copper precursor content drives phase evolution toward tetrahedrite-dominant CAS films at intermediate Cu(dedtc)2 mole fractions, with the film deposited at x = 0.35 exhibiting the strongest tetrahedrite character within the parameter space examined. The films are also copper-rich, antimony-poor, and sulphur-deficient, consistent with off-stoichiometric growth and intrinsic defect formation, plausibly including copper interstitials, Cu-on-Sb antisites, and sulphur vacancies. These growth-dependent compositional deviations are accompanied by tunable indirect optical bandgaps of approximately 1.60 – 2.18 eV and weak visible photoluminescence governed by defect-mediated recombination. Time-resolved photoluminescence reveals bi-exponential decay behaviour with lifetimes of approximately 0.1 – 3.6 ns, with emission dominated by slower donor–acceptor pair recombination and a smaller contribution from faster trap-assisted pathways. Collectively, these results establish an explicit kinetic process–structure–defect–property relationship for AACVD-grown CAS thin films and provide a growth–structure–property framework relevant to future optimization of CAS-based optoelectronic and energy materials.

36 MATERIALS SCIENCE

Maximizing dynamic range and performance of anatase TiO 2 ECRAM through structure and programming

Here, in this study, we investigate the structure-dependent modulation characteristics of all-solid-state three-terminal electrochemical random-access memory (ECRAM) based on an anatase Li x TiO 2 channel. By directly comparing “asymmetric” and “symmetric” ECRAM device architectures, we reveal significant insight into the impact of a non-zero gate-drain open-circuit voltage and its influence on voltage vs. current-controlled gating. We also explore the impact of potentiation/depression write parameters on the symmetry, linearity, and dynamic range of the device response. Together, initial results from optimizing structure and programming approaches yielded unprecedented G max /G min ratios of >1,000 for ECRAM and hundreds of tunable memory states with excellent linearity and symmetry. Simulations based on these ECRAM devices further illustrate the promise of this analog memory technology, achieving near 2% classification error in the MNIST digit recognition benchmark for a range of training parameters compared to a theoretical best of 1.66% and outperforming other device models extracted from the literature.

AIHWKit

Direct comparison of gamma, electron beam and X-ray radiation effects on the polymers of a pulsed lavage device

Gamma radiation used for sterilization of medical devices is challenged by cobalt-60 supply and commercial capacity. To maintain a robust radiation sterilization marketplace for the rapidly growing single-use medical device industry, investigation of potential alternatives to gamma technology, such as electron beam (e-beam) and X-ray technology, is critical. In this work, we directly compare the effects of radiation source and absorbed dose level on the polymeric materials and function of a commercial pulsed lavage device used for wound care. Product functionality, polymer mechanical, and polymer optical properties were evaluated using standard methods and input from the device manufacturer. Test results show that functionality of the product was not inhibited by radiation although the battery in the device exposed to X-ray exhibited greater voltage loss compared to batteries in products exposed to gamma or e-beam. Statistically significant differences between gamma and e-beam exposure and between gamma and X-ray exposure were also observed for product appearance in terms of yellowness index of several of the polymers considered. Overall, the results of this study support the viability of e-beam and X-ray radiation technologies as alternatives to cobalt-60 gamma technology for sterilization of the single-use pulsed lavage medical device investigated.

Electron beam

Analysis of Screen Channel LAD Bubble Point Tests in Liquid Methane at Elevated Temperature

This paper examines the effect of varying the liquid temperature and pressure on the bubble point pressure for screen channel Liquid Acquisition Devices in cryogenic liquid methane using gaseous helium across a wide range of elevated pressures and temperatures. Testing of a 325 x 2300 Dutch Twill screen sample was conducted in the Cryogenic Components Lab 7 facility at the NASA Glenn Research Center in Cleveland, Ohio. Test conditions ranged from 105 to 160K and 0.0965 – 1.78 MPa. Bubble point is shown to be a strong function of the liquid temperature and a weak function of the amount of subcooling at the LAD screen. The model predicts well for saturated liquid but under predicts the subcooled data.

Reaction Control System

How efficiently can AI recognize Wireless Devices?

This poster presents a hardware benchmarking methodology for a 3-layer CNN waveform classifier deployed using ONNX Runtime on an NVIDIA Jetson AGX Orin. The dataset consist of 9 signal types, -30 to +30 dB SNR with 5dB increments. Benchmarking on the Jetson AGX Orin gave an accuracy of 91.9% and GPU throughput of 107,120 predictions/sec (23× faster than CPU). The Jetson GPU reached approximately 27M samples/sec with stable performance but fell below the 40 MHz rate needed for real-time radio feeds. Sustained testing of 5 minutes confirmed stable performance with no memory leaks, establishing a reproducible benchmarking baseline for future edge-deployment optimization.

99 - GENERAL AND MISCELLANEOUS

Mechanisms of Protonic Nonvolatile Memory Device

A nonvolatile memory device based on protonic transport in oxides has been proposed. The mobile H+ ions are introduced into the SiO2 layer by annealing Si/SiO2/Si structures in H2 at temperatures greater than 500 deg C. This effect has only been observed for confined oxides that have been annealed at greater than or equal to 1100 C prior to the hydrogenation anneal. This includes buried oxides such as Unibond and SIMOX as well as thermal oxides annealed with a polysilicon cap. An applied field moves the charge within the oxide and the charge stops moving when the field is removed. In a memory device, the hydrogen-annealed oxide is the gate oxide and the position of the mobile charge is sensed by the shift of the I-V curve. Much is still not understood about the motion of the charge across the buried oxide. Previous work has assumed that H+ transport and the time it takes to traverse the oxide is governed by interactions within the bulk of the oxide. Based on parameters that affect the transport time, we conclude that H+ trapping and detrapping at the Si/SiO2 interface are more important than H+ interactions within the oxide bulk. These parameters include the applied field, the H+ concentration and the oxide thickness. One consequence is that projections of device write-time based on the previous assumptions of H+ transport mechanisms may be overly optimistic.

P J Macfarlane