Phonon-induced splitting of exciton lines in MgO and BeO.
Exciton line splitting in MgO and BeO induced by exciton-phonon coupling, comparing splitting with longitudinal optical phonon energy
Loh, E.↗
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Subpicosecond time-resolved studies of coherent phonon oscillations in thin-film YBa2Cu3O(6+x) (x less than 0.4)
The results are reported of the first time-resolved observation of impulsively generated coherent optical phonon oscillations in the semiconducting cuprate compound YBa2Cu3O(6+x ) (x less than 0.4). The oscillations, which were probed through time-resolved transmissivity modulation, had a period of 237 fsec at room temperature, corresponding to a Raman active mode at A(1g) symmetry at 142/cm. No oscillations were observed in the superconducting form of Y-Ba-Cu-O either above or below Tc. The amplitude, frequency, and linewidth of this mode were measured over a temperature range from about 7 K to room temperature.
Chwalek, J. M.↗
Temperature-dependent optical properties of Cd(1-x),Zn(x),Te substitute material
In this study, we report cryogenic optical properties of Cd(l-x), Zn(x), Te wafers that are used as substrate seed layers in the manufacturing of HgCdTe focal-plane array detectors. These studies are motivated by the fact that the substrate optical properties influence the overall detector performance. The studies consist of measuring the substrate frequency dependent transmittance T(W) and reflectance R(W) above and below the optical band-gap in the UV/Visible and infrared frequency ranges, and with temperature variation of the sample from 5 to 300 K. Determination of the optical absorption from these measurements show that the optical absorption energy gap near 1.6 eV shows a substantial increase as the temperature is reduced from 300 to 5 K. Furthermore, we observe the presence of infrared-active optical phonons whose peak frequency shifts as the temperature of the sample is varied over the measured temperature range. The theoretical frequency dependent optical conductivity, with allowance for redistribution of spectral weight among the interband transition charge carriers, will be discussed.
Quijada, Manuel A.↗
Raman scattering studies of chemical-vapor-deposited cubic SiC films of (100)Si
Raman scattering studies for a series of CVD-grown cubic SiC single-crystal films with film thickness from 600 A to 17 microns are discussed. The results suggest that the crystalline orientations of the Si substrate and the 3C-SiC film are the same. It is found that the Si 522/cm phonon from a Si wafer is enhanced in intensity by a factor of 2-3 due to a CVD overlayer of cubic SiC, and that the 3C-SiC longitudinal optical phonon at the Gamma point from SiC/Si samples is enhanced by a factor of two or three following the removal of the Si substrate. The variation of the Raman spectrum with incident power is investigated, and a method for determining the Raman cross section for 3 C-SiC is proposed.
Feng, Z. C.↗
Superconductivity in the palladium-hydrogen system
Band theory and phonon measurements are used to calculate the electron-phonon coupling constant wavelength for Pd and PdD. The results indicate that superconductivity is absent in Pd metal because of the large value of the Coulomb pseudopotential, and that superconductivity occurs in PdD primarily because of coupling with the optic phonons. These results are consistent with superconducting transition-temperature measurements for these systems.
Papaconstantopoulos, D. A.↗
Polarons in Anisotropic Energy Bands
Calculation of polaron properties in anisotropic energy bands, and results for electron on spheroidal energy surface interacting with optical phonons
Kahn, A. H.↗
An experimental investigation of radiation effects in semiconductors Semiannual status report, Jul. 1 - Dec. 31, 1967
Recombination luminescence of irradiated silicon, and hole-optical phonon interaction in degenerate silicon
Compton, W. D.↗
Polarons in anisotropic energy bands.
Polaron coupling approximation applied to electron-longitudinal optical phonon interaction on spheroidal energy band surface of strontium titanate
Kahn, A. H.↗
Electrical characterization of Hg(1-x)Cd(x)Te alloys
Theoretical models are described for calculations of charge-carrier concentrations, Fermi energy, and conduction electron mobility as functions of x, temperature, and ionized and neutral defect concentrations of Hg(1-x)Cd(x)Te alloys. Measurements are reported of electron concentration and electron mobility from 5-300 K for alloys with x values of between 0.17 and 0.30. The electrical data are in reasonable agreement with theory, and were analyzed to obtain estimates of donor and acceptor state concentrations. The electron mobilities are calculated in terms of a microscopic theory of electrical conduction derived from the solution of the Boltzmann equation for the perturbed steady-state electron distribution function, and they show that longitudinal optical-phonon and charged and neutral defect scattering are the dominant mobility-limiting mechanisms.
Lehoczky, S. L.↗
Ballistic transport in II-VI semiconductor compounds and alloys
Realistic band structures are used in calculating the group velocity and scattering rates for electrons with injection energies up to 1 eV in ZnTe, CdTe, and the low-effective-mass alloy Hg(0.7)Cd(0.3)Te. Scattering from longitudinal optical phonons, ionized impurities, and alloy disorder have been included in the full band-structure calculation, which automatically includes both intra- and intervalley scattering. Of the II-VI materials considered, at 77 K HgCdTe is superior for low injection energies (up to 0.25 eV) while CdTe is superior at higher injection energies (1 eV) at room temperature. The attainable mean free paths (equal to or greater than 1000 A) and group velocities (equal to or greater than 10 to the 8th cm/s) for both systems are comparable to values found in III-V systems.
Berding, M. A.↗
Tunable superlattice p-i-n photodetectors: Characteristics, theory, and applications
Extended measurements and theory on the recently developed monolithic wavelength demultiplexer consisting of voltage-tunable superlattice p-i-n photodetectors in a waveguide configuration are discussed. It is shown that the device is able to demultiplex and detect two optical signals with a wavelength separation of 20 nm directly into different electrical channels at a data rate of 1 Gb/s and with a crosstalk attenuation varying between 20 and 28 dB, depending on the polarization. The minimum acceptable crosstalk attenuation at a data rate of 100 Mb/s is determined to be 10 dB. The feasibility of using the device as a polarization angle sensor for linearly polarized light is also demonstrated. A theory for the emission of photogenerated carriers out of the quantum wells is included, since this is potentially a speed limiting mechanism in these detectors. It is shown that a theory of thermally assisted tunneling by polar optical phonon interaction is able to predict emission times consistent with the observed temporal response.
Larsson, Anders↗
Evaluation of the feasibility of a far-infrared laser based on intersubband transitions in GaAs quantum wells
The threshold current and quantum efficiency are calculated for an FIR injection laser based on intersubband transitions in GaAs single quantum wells. By considering the balance of gain against the free carrier and transverse optical phonon absorption, and the intersubband transition time, the wavelength dependence of the threshold current is calculated. For the wavelength range 50-120 microns, the required threshold currents are the lowest and have reasonable values of 1-10 kA/sq cm. The threshold quantum efficiency in that range is expected to be about 0.0001.
Borenstain, Shmuel I.↗
Thermoelectric properties of pressure-sintered Si(0.8)Ge(0.2) thermoelectric alloys
The thermoelectric properties of 28 sintered Si(0.8)Ge(0.2) alloys, heavily doped with either B or P and prepared from powders with median particle sizes ranging from about 1 to over 100 microns, have been determined from 300 to 1300 K. The thermal conductivity decreases with decreasing particle size; however, the figure of merit is not significantly increased due to a compensating reduction in the electrical conductivity. The thermoelectric figure of merit is in good agreement with results of Dismukes et al. (1964) on similarly doped alloys prepared by zone-leveling techniques. The electrical and thermal conductivity are found to be sensitive to preparation procedure while the Seebeck coefficient and figure of merit are much less sensitive. The high-temperature electrical properties are consistent with charge carrier scattering by acoustic or optical phonons.
Vining, Cronin B.↗
Charge transfer polarisation wave in high Tc oxides and superconductive pairing
A general formalism of quantized charge transfer polarization waves was developed. The nature of possible superconductive pairing between oxygen holes is discussed. Unlike optical phonons, these polarization fields will give rise to dielectric bipolarons or bipolaron bubbles. In the weak coupling limit, a new class of superconductivity is to be expected.
Chakraverty, B. K.↗
Raman scattering of InGaAs/InP grown by uniform radial flow epitaxy
Uniform radial flow epitaxy, a novel growth technique, has been used to grown InGaAs films on InP. Epitaxial layers above and below the critical thickness for the onset of slip were grown. Raman spectroscopy was used to characterize the quality of epitaxial layers, determine alloy composition, and measure the strain. Raman spectra from both pseudomorphic (strained) and relaxed (unstrained) InGaAs films were obtained at 300 and 80 K. The difference in the frequencies of their GaAs-like longitudinal optical phonons was used to calculate stress for the strained InGaAs/InP, leading to a direct formula for the evaluation of the layer stress.
Feng, Z. C.↗
Raman scattering characterization of space solar cell structures
A contactless method for the determination of the free-carrier density and the composition distribution across the thickness of 3-5 multi-layer solar cell structures, using the Raman scattering method, is developed. The method includes a step analysis of Raman spectra from optical phonons and phonon-plasmon modes of different layers. The method provides simultaneous measurements of the element composition and the thickness of the structure's layers together with the free-carrier density. The results of measurements of the free-carrier density composition distributions of the liquid phase epitaxy grown AlGaAs/GaAs and GaSb solar cell structures are presented and discussed.
Mintairov, Alexander M.↗
Microscopic Modeling of Intersubband Optical Processes in Type II Semiconductor Quantum Wells: Linear Absorption
Linear absorption spectra arising from intersubband transitions in semiconductor quantum well heterostructures are analyzed using quantum kinetic theory by treating correlations to the first order within Hartree-Fock approximation. The resulting intersubband semiconductor Bloch equations take into account extrinsic dephasing contributions, carrier-longitudinal optical phonon interaction and carrier-interface roughness interaction which is considered with Ando s theory. As input for resonance lineshape calculation, a spurious-states-free 8-band kp Hamiltonian is used, in conjunction with the envelop function approximation, to compute self-consistently the energy subband structure of electrons in type II InAs/AlSb single quantum well structures. We demonstrate the interplay of nonparabolicity and many-body effects in the mid-infrared frequency range for such heterostructures.
Li, Jian-Zhong↗
Lattice Thermal Conductivity of Ultra High Temperature Ceramics ZrB2 and HfB2 from Atomistic Simulations
Atomistic Green-Kubo simulations are performed to evaluate the lattice thermal conductivity for single crystals of the ultra high temperature ceramics ZrB2 and HfB2 for a range of temperatures. Recently developed interatomic potentials are used for these simulations. Heat current correlation functions show rapid oscillations which can be identified with mixed metal-Boron optical phonon modes. Agreement with available experimental data is good.
Lawson, John W.↗