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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Nonvolatile Electric Field Control of Thermal Magnons in the Absence of an Applied Magnetic Field

Spin transport through magnetic insulators has been demonstrated in a variety of materials and is an emerging pathway for next-generation spin-based computing. To modulate spin transport in these systems, one typically applies a sufficiently strong magnetic field to allow for deterministic control of magnetic order. Here, we make use of the well-known multiferroic magnetoelectric, BiFeO 3 , to demonstrate nonvolatile, hysteretic, electric-field control of thermally excited magnon current in the absence of an applied magnetic field. The findings in this work are an important step toward magnon-based devices, where electric-field-only control is highly desirable.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1977

DIFMOS - A floating-gate electrically erasable nonvolatile semiconductor memory technology

Electrically alterable read-only memories (EAROM's) or reprogrammable read-only memories (RPROM's) can be fabricated using a single-level metal-gate p-channel MOS technology with all conventional processing steps. Given the acronym DIFMOS for dual-injector floating-gate MOS, this technology utilizes the floating-gate technique for nonvolatile storage of data. Avalanche injection of hot electrons through gate oxide from a special injector diode in each bit is used to charge the floating gates. A second injector structure included in each bit permits discharge of the floating gate by avalanche injection of holes through gate oxide. The overall design of the DIFMOS bit is dictated by the physical considerations required for each of the avalanche injector types. The end result is a circuit technology which can provide fully decoded bit-erasable EAROM-type circuits using conventional manufacturing techniques.

Gosney, W. M.↗
NASA NTRS1981

Semiconductor-ferroelectric nonvolatile memory using anomalous high photovoltages in ferroelectric ceramics

A small ferroelectric ceramic element is used with an insulating gate transistor and two diodes as an electrically addressed, nonvolatile memory device which is read out nondestructively. The device uses the anomalous photovoltaic effect in ferroelectric ceramics, an effect in which the polarity and magnitude of photovoltages depend on the direction and magnitude of remanent polarization. Experimental results give memory characteristics. The device could be programmed with pulses as short as 200 ns. There is long-time retention of stored data.

Brody, P. S.↗
NASA NTRS1985

Analysis of Nonvolatile Residue (NVR) from Spacecraft Systems

Organic contamination on critical spacecraft surfaces can cause electronic problems, serious attenuation of various optical signals, thermal control changes, and adhesion problems. Such contaminants can be detected early by the controlled use of witness mirrors, witness plates, wipe sampling, or direct solvent extraction. Each method requires careful control of variables of technique and materials to attain the ultimate sensitivities inherent to that procedure. Subsequent chemical analysis of the contaminant sample by infrared and mass spectrometry identifies the components, gives semiquantitative estimates of contaminant thickness, indicates possible sources of the nonvolatile residue (NVR), and provides guidance for effective cleanup procedures.

Colony, J. A.↗
NASA NTRS1991

Precision Cleaning Verification of Nonvolatile Residues by Using Water, Ultrasonics, and Turbidity Analyses

Chlorofluorocarbons (CFC's) in the atmosphere are believed to present a major environmental problem because they are able to interact with and deplete the ozone layer. NASA has been mandated to replace chlorinated solvents in precision cleaning, cleanliness verification, and degreasing of aerospace fluid systems hardware and ground support equipment. KSC has a CFC phase-out plan which provides for the elimination of over 90 percent of the CFC and halon use by 1995. The Materials Science Laboratory and KSC is evaluating four analytical methods for the determination of nonvolatile residues removal by water: (1) infrared analyses using an attenuated total reflectance; (2) surface tension analyses, (3) total organic content analyses, and (4) turbidity analyses. This research project examined the ultrasonic-turbidity responses for 22 hydrocarbons in an effect to determine: (1) if ultrasonics in heated water (70 C) will clean hydrocarbons (oils, greases, gels, and fluids) from aerospace hardware; (2) if the cleaning process by ultrasonics will simultaneously emulsify the removed hydrocarbons in the water; and (3) if a turbidimeter can be used successfully as an analytical instrument for quantifying the removal of hydrocarbons. Sixteen of the 22 hydrocarbons tested showed that ultrasonics would remove it at least 90 percent of the contaminated hydrocarbon from the hardware in 10 minutes or less giving a good ultrasonic-turbidity response. Six hydrocarbons had a lower percentage removal, a slower removal rate, and a marginal ultrasonic-turbidity response.

Skinner, S. Ballou↗
NASA NTRS1993

Nonvolatile Array Of Synapses For Neural Network

Elements of array programmed with help of ultraviolet light. A 32 x 32 very-large-scale integrated-circuit array of electronic synapses serves as building-block chip for analog neural-network computer. Synaptic weights stored in nonvolatile manner. Makes information content of array invulnerable to loss of power, and, by eliminating need for circuitry to refresh volatile synaptic memory, makes architecture simpler and more compact.

Tawel, Raoul↗
NASA NTRS1994

Nonvolatile GaAs Random-Access Memory

Proposed random-access integrated-circuit electronic memory offers nonvolatile magnetic storage. Bits stored magnetically and read out with Hall-effect sensors. Advantages include short reading and writing times and high degree of immunity to both single-event upsets and permanent damage by ionizing radiation. Use of same basic material for both transistors and sensors simplifies fabrication process, with consequent benefits in increased yield and reduced cost.

Katti, Romney R.↗
NASA NTRS1995

A Real-Time Nonvolatile Residue (NVR) Monitor

New development and application of device described in "Surface-Acoustic-Wave Piezoelectric Microbalance," (LAR-14476). Active sensing element of Real-Time NVR Monitor comprises pair of piezoelectric surface-acoustic-wave resonators resonating at frequency of 200 MHz. Bare, uncoated resonator exposed to atmosphere and directly in contact with airborne volatile and nonvolatile materials leaving residues on surface. Resonant frequency of exposed resonator decreases with increasing mass of adsorbed residue; resulting beat frequency between two resonators increases with mass and serves as sensitive real-time indication of airborne contaminants or non-volatile residue.

Bowers, William D.↗
NASA NTRS1996

Performance Enhancement of a High Speed Jet Impingement System for Nonvolatile Residue Removal

A high speed jet impingement cleaning facility has been developed to study the effectiveness of the nonvolatile residue removal. The facility includes a high pressure air compressor which charges the k-bottles to supply high pressure air, an air heating section to vary the temperature of the high pressure air, an air-water mixing chamber to meter the water flow and generate small size droplets, and a converging- diverging nozzle to deliver the supersonic air-droplet mixture flow to the cleaning surface. To reliably quantify the cleanliness of the surface, a simple procedure for measurement and calibration is developed to relate the amount of the residue on the surface to the relative change in the reflectivity between a clean surface and the greased surface. This calibration procedure is economical, simple, reliable, and robust. a theoretical framework is developed to provide qualitative guidance for the design of the test and interpretation of the experimental results. The result documented in this report support the theoretical considerations.

Klausner, James F.↗
NASA NTRS2001

Nonvolatile Memory Solution for Near-Term NASA Missions

Nonvolatile memory (NVM) system that could reliably function in extreme environments is one of the most critical components for many spacecrafts being developed for NASA missions to be launched in next four to seven years. NVM supports the computer system in saving and updating critical state data required for a warm restart after power cycling or in case of a power bus failure. It also provides a power independent mass storage capacity for the scientific data gathered by the instruments. In some cases the window for gathering such data is very small and occurs only once in a given mission. Commercially popular and fully developed Flash NVM technology is inappropriate for many reasons such as the limited read write cycles with slower access speeds, radiation intolerance, higher Single Event Upsets (SEU) rates, etc. It is desirable to have an NVM system based upon a robust cell technology making it immune to the SEUs and with sufficient radiation hardness. Availability of such NVM system seems to be still 5 to 10 years in the future. Meanwhile, it is possible to provide an interim hybrid solution by combining the existing rad-hard technologies. Additional information is contained in the original extended abstract.

Patel, J. U.↗
NASA NTRS2000

Mechanisms of Protonic Nonvolatile Memory Device

A nonvolatile memory device based on protonic transport in oxides has been proposed. The mobile H+ ions are introduced into the SiO2 layer by annealing Si/SiO2/Si structures in H2 at temperatures greater than 500 deg C. This effect has only been observed for confined oxides that have been annealed at greater than or equal to 1100 C prior to the hydrogenation anneal. This includes buried oxides such as Unibond and SIMOX as well as thermal oxides annealed with a polysilicon cap. An applied field moves the charge within the oxide and the charge stops moving when the field is removed. In a memory device, the hydrogen-annealed oxide is the gate oxide and the position of the mobile charge is sensed by the shift of the I-V curve. Much is still not understood about the motion of the charge across the buried oxide. Previous work has assumed that H+ transport and the time it takes to traverse the oxide is governed by interactions within the bulk of the oxide. Based on parameters that affect the transport time, we conclude that H+ trapping and detrapping at the Si/SiO2 interface are more important than H+ interactions within the oxide bulk. These parameters include the applied field, the H+ concentration and the oxide thickness. One consequence is that projections of device write-time based on the previous assumptions of H+ transport mechanisms may be overly optimistic.

P J Macfarlane↗
NASA NTRS2004

Effects of Heavy Ion Exposure on Nanocrystal Nonvolatile Memory

We have irradiated engineering samples of Freescale 4M nonvolatile memories with heavy ions. They use Silicon nanocrystals as the storage element, rather than the more common floating gate. The irradiations were performed using the Texas A&M University cyclotron Single Event Effects Test Facility. The chips were tested in the static mode, and in the dynamic read mode, dynamic write (program) mode, and dynamic erase mode. All the errors observed appeared to be due to single, isolated bits, even in the program and erase modes. These errors appeared to be related to the micro-dose mechanism. All the errors corresponded to the loss of electrons from a programmed cell. The underlying physical mechanisms will be discussed in more detail later. There were no errors, which could be attributed to malfunctions of the control circuits. At the highest LET used in the test (85 MeV/mg/sq cm), however, there appeared to be a failure due to gate rupture. Failure analysis is being conducted to confirm this conclusion. There was no unambiguous evidence of latchup under any test conditions. Generally, the results on the nanocrystal technology compare favorably with results on currently available commercial floating gate technology, indicating that the technology is promising for future space applications, both civilian and military.

Oldham, Timothy R.↗
NASA NTRS2007

Nonvolatile Analog Memory

A nonvolatile analog memory uses pairs of ferroelectric field effect transistors (FFETs). Each pair is defined by a first FFET and a second FFET. When an analog value is to be stored in one of the pairs, the first FFET has a saturation voltage applied thereto, and the second FFET has a storage voltage applied thereto that is indicative of the analog value. The saturation and storage voltages decay over time in accordance with a known decay function that is used to recover the original analog value when the pair of FFETs is read.

MacLeod, Todd C.↗