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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Optimization of transistor design including large signal device/circuit interactions at extremely high frequencies (20-100+GHz)

Transistor design for extremely high frequency applications requires consideration of the interaction between the device and the circuit to which it is connected. Traditional analytical transistor models are to approximate at some of these frequencies and may not account for variations of dopants and semiconductor materials (especially some of the newer materials) within the device. Physically based models of device performance are required. These are based on coupled systems of partial differential equations and typically require 20 minutes of Cray computer time for a single AC operating point. A technique is presented to extract parameters from a few partial differential equation solutions for the device to create a nonlinear equivalent circuit model which runs in approximately 1 second of personal computer time. This nonlinear equivalent circuit model accurately replicates the contact current properties of the device as computed by the partial differential solver on which it is based. Using the nonlinear equivalent circuit model of the device, optimization of systems design can be performed based on device/circuit interactions.

Levy, Ralph↗
NASA NTRS1977

Computer aided nonlinear electrical networks analysis

Techniques used in simulating an electrical circuit with nonlinear elements for use in computer-aided circuit analysis programs are described. Elements of the circuit include capacitors, resistors, inductors, transistors, diodes, and voltage and current sources (constant or time varying). Simulation features are discussed for dc, ac, and/or transient circuit analysis. Calculations are based on the model approach of formulating the circuit equations. A particular solution of transient analysis for nonlinear storage elements is described.

Slapnicar, P.↗
NASA NTRS1998

Magnetic current sensor

A current determiner having an output at which representations of input currents are provided having an input conductor for the input current and a current sensor supported on a substrate electrically isolated from one another but with the sensor positioned in the magnetic fields arising about the input conductor due to any input currents. The sensor extends along the substrate in a direction primarily perpendicular to the extent of the input conductor and is formed of at least a pair of thin-film ferromagnetic layers separated by a non-magnetic conductive layer. The sensor can be electrically connected to a electronic circuitry formed in the substrate including a nonlinearity adaptation circuit to provide representations of the input currents of increased accuracy despite nonlinearities in the current sensor, and can include further current sensors in bridge circuits.

Black, Jr., William C.↗
NASA NTRS2001

Magnetically coupled signal isolator

A current determiner having an output at which representations of input currents are provided having an input conductor for the input current and a current sensor supported on a substrate electrically isolated from one another but with the sensor positioned in the magnetic fields arising about the input conductor due to any input currents. The sensor extends along the substrate in a direction primarily perpendicular to the extent of the input conductor and is formed of at least a pair of thin-film ferromagnetic layers separated by a non-magnetic conductive layer. The sensor can be electrically connected to electronic circuitry formed in the substrate including a nonlinearity adaptation circuit to provide representations of the input currents of increased accuracy despite nonlinearities in the current sensor, and can include further current sensors in bridge circuits.

Black, Jr., William C.↗
NASA NTRS1966

Feedback loop compensates for rectifier nonlinearity

Signal processing circuit with two negative feedback loops rectifies two sinusoidal signals which are 180 degrees out of phase and produces a single full-wave rectified output signal. Each feedback loop incorporates a feedback rectifier to compensate for the nonlinearity of the circuit.

Source record↗
NASA NTRS1995

Simulation of 100-300 GHz solid-state harmonic sources

Accurate and efficient simulations of the large-signal time-dependent characteristics of second-harmonic Transferred Electron Oscillators (TEO's) and Heterostructure Barrier Varactor (HBV) frequency triplers have been obtained. This is accomplished by using a novel and efficient harmonic-balance circuit analysis technique which facilitates the integration of physics-based hydrodynamic device simulators. The integrated hydrodynamic device/harmonic-balance circuit simulators allow TEO and HBV circuits to be co-designed from both a device and a circuit point of view. Comparisons have been made with published experimental data for both TEO's and HBV's. For TEO's, excellent correlation has been obtained at 140 GHz and 188 GHz in second-harmonic operation. Excellent correlation has also been obtained for HBV frequency triplers operating near 200 GHz. For HBV's, both a lumped quasi-static equivalent circuit model and the hydrodynamic device simulator have been linked to the harmonic-balance circuit simulator. This comparison illustrates the importance of representing active devices with physics-based numerical device models rather than analytical device models.

NONLINEAR CIRCUITS↗
NASA NTRS1975

Dynamic Discharge Arc Driver

A computer program using nonlinear RLC circuit analysis was developed to accurately model the electrical discharge performance of the Ames 1-MJ energy storage and arc-driver system. Solutions of circuit parameters are compared with experimental circuit data and related to shock speed measurements. Computer analysis led to the concept of a Dynamic Discharge Arc Driver (DDAD) capable of increasing the range of operation of shock-driven facilities. Utilization of mass addition of the driver gas offers a unique means of improving driver performance. Mass addition acts to increase the arc resistance, which results in better electrical circuit damping with more efficient Joule heating, producing stronger shock waves. Preliminary tests resulted in an increase in shock Mach number from 34 to 39 in air at an initial pressure of 2.5 torr.

Dannenberg, R. E.↗
NASA NTRS1977

FM oscillator has improved deviation linearity

Device can be obtained by driving basic circuit through nonlinear FET input stage. Frequency of VCO is linearized with FET and total variance is varactor controlled. Experimental device exhibited linearity of better than plus or minus one percent for total frequency of plus or minus 10 millihertz.

Honnell, M. A.↗
NASA NTRS2001

Temperature Effects in Varactors and Multipliers

Varactor diode multipliers are a critical part of many THz measurement systems. The power and efficiencies of these devices limit the available power for THz sources. Varactor operation is determined by the physics of the varactor device and a careful doping profile design is needed to optimize the performance. Higher doped devices are limited by junction breakdown and lower doped structures are limited by current saturation. Higher doped structures typically have higher efficiencies and lower doped structures typically have higher powers at the same operating frequency and impedance level. However, the device material properties are also a function of the operating temperature. Recent experimental evidence has shown that the power output of a multiplier can be improved by cooling the device. We have used a particle Monte Carlo simulation to investigate the temperature dependent velocity vs. electric field in GaAs. This information was then included in a nonlinear device circuit simulator to predict multiplier performance for various temperatures and device designs. This paper will describe the results of this analysis of temperature dependent multiplier operation.

East, J.↗
NASA NTRS2012

Progress Toward Accurate Measurements of Power Consumptions of DBD Plasma Actuators

The accurate measurement of power consumption by Dielectric Barrier Discharge (DBD) plasma actuators is a challenge due to the characteristics of the actuator current signal. Micro-discharges generate high-amplitude, high-frequency current spike transients superimposed on a low-amplitude, low-frequency current. We have used a high-speed digital oscilloscope to measure the actuator power consumption using the Shunt Resistor method and the Monitor Capacitor method. The measurements were performed simultaneously and compared to each other in a time-accurate manner. It was found that low signal-to-noise ratios of the oscilloscopes used, in combination with the high dynamic range of the current spikes, make the Shunt Resistor method inaccurate. An innovative, nonlinear signal compression circuit was applied to the actuator current signal and yielded excellent agreement between the two methods. The paper describes the issues and challenges associated with performing accurate power measurements. It provides insights into the two methods including new insight into the Lissajous curve of the Monitor Capacitor method. Extension to a broad range of parameters and further development of the compression hardware will be performed in future work.

Ashpis, David E.↗
NASA NTRS1988

Difference-Equation/Flow-Graph Circuit Analysis

Numerical technique enables rapid, approximate analyses of electronic circuits containing linear and nonlinear elements. Practiced in variety of computer languages on large and small computers; for circuits simple enough, programmable hand calculators used. Although some combinations of circuit elements make numerical solutions diverge, enables quick identification of divergence and correction of circuit models to make solutions converge.

Mcvey, I. M.↗
NASA NTRS1990

Asymmetric Memory Circuit Would Resist Soft Errors

Some nonlinear error-correcting codes more efficient in presence of asymmetry. Combination of circuit-design and coding concepts expected to make integrated-circuit random-access memories more resistant to "soft" errors (temporary bit errors, also called "single-event upsets" due to ionizing radiation). Integrated circuit of new type made deliberately more susceptible to one kind of bit error than to other, and associated error-correcting code adapted to exploit this asymmetry in error probabilities.

Buehler, Martin G.↗