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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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25 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

PANTHER: A Programmable Architecture for Neural Network Training Harnessing Energy-Efficient ReRAM

The wide adoption of deep neural networks has been accompanied by ever-increasing energy and performance demands due to the expensive nature of training them. Additionally, numerous special-purpose architectures have been proposed to accelerate training: both digital and hybrid digital-analog using resistive RAM (ReRAM) crossbars. ReRAM-based accelerators have demonstrated the effectiveness of ReRAM crossbars at performing matrix-vector multiplication operations that are prevalent in training. However, they still suffer from inefficiency due to the use of serial reads and writes for performing the weight gradient and update step. A few works have demonstrated the possibility of performing outer products in crossbars, which can be used to realize the weight gradient and update step without the use of serial reads and writes. However, these works have been limited to low precision operations which are not sufficient for typical training workloads. Moreover, they have been confined to a limited set of training algorithms for fully-connected layers only. To address these limitations, we propose a bit-slicing technique for enhancing the precision of ReRAM-based outer products, which is substantially different from bit-slicing for matrix-vector multiplication only. We incorporate this technique into a crossbar architecture with three variants catered to different training algorithms. To evaluate our design on different types of layers in neural networks (fully-connected, convolutional, etc.) and training algorithms, we develop PANTHER, an ISA-programmable training accelerator with compiler support. Our design can also be integrated into other accelerators in the literature to enhance their efficiency. Our evaluation shows that PANTHER achieves up to 8.02×, 54.21×, and 103× energy reductions as well as 7.16×, 4.02×, and 16× execution time reductions compared to digital accelerators, ReRAM-based accelerators, and GPUs, respectively.

42 ENGINEERING↗
DOE OSTI2024

Variation-Resilient FeFET-Based In-Memory Computing Leveraging Probabilistic Deep Learning

Reliability issues stemming from device level nonidealities of nonvolatile emerging technologies like ferroelectric field-effect transistors (FeFETs), especially at scaled dimensions, cause substantial degradation in the accuracy of in-memory crossbar-based AI systems. Here, in this work, we present a variation-aware design technique to characterize the device level variations and to mitigate their impact on hardware accuracy employing a Bayesian neural network (BNN) approach. An effective conductance variation model is derived from the experimental measurements of cycle-to-cycle (C2C) and device-to-device (D2D) variations performed on FeFET devices fabricated using 28 nm high-k metal gate technology. The variations were found to be a function of different conductance states within the given programming range, which sharply contrasts earlier efforts where a fixed variation dispersion was considered for all conductance values. Such variation characteristics formulated for three different device sizes at different read voltages were provided as prior variation information to the BNN to yield a more exact and reliable inference. Near-ideal accuracy for shallow networks (MLP5 and LeNet models) on the MNIST dataset and limited accuracy decline by ~3.8%–16.1% for deeper AlexNet models on CIFAR10 dataset under a wide range of variations corresponding to different device sizes and read voltages, demonstrates the efficacy of our proposed device-algorithm co-design technique.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2025

ReSpike: A Co-Design Framework for Evaluating SNNs on ReRAM-Based Neuromorphic Processors

With Moore’s law approaching its end, traditional von Neumann architectures are struggling to keep up with the exceeding performance and memory requirements of artificial intelligence and machine learning algorithms. Unconventional computing approaches such as neuromorphic computing that leverage spiking neural networks (SNNs) to perform computation are gaining traction and seek the paradigm shift necessary to sustain the increasing demands of modern applications. Novel memory technologies, such as resistive RAM (ReRAM), employ a crossbar architecture that possesses the inherent capability of efficiently computing vector-matrix multiplication—a dominant operation in SNNs. The prospect of naturally mapping SNNs to the crossbar structures provides a unique opportunity for achieving a high-performance, power-efficient neuromorphic system. In this work, we present ReSpike, which is a new framework, behavioral simulator, and architectural design based on ReRAM crossbar architectures, enabling modeling and co-design to achieve efficient execution of SNNs. We drive this co-design forward by quantifying the impact that ReRAM cell nonidealities have on the corresponding accuracy of an SNN application.

Asifuzzaman, Kazi [ORNL] (ORCID:0000000240044791)↗
DOE OSTI2022

DFSynthesizer: Dataflow-based Synthesis of Spiking Neural Networks to Neuromorphic Hardware

Spiking Neural Networks (SNNs) are an emerging computation model that uses event-driven activation and bio-inspired learning algorithms. SNN-based machine learning programs are typically executed on tile-based neuromorphic hardware platforms, where each tile consists of a computation unit called a crossbar, which maps neurons and synapses of the program. However, synthesizing such programs on an off-the-shelf neuromorphic hardware is challenging. This is because of the inherent resource and latency limitations of the hardware, which impact both model performance, e.g., accuracy, and hardware performance, e.g., throughput. We propose DFSynthesizer, an end-to-end framework for synthesizing SNN-based machine learning programs to neuromorphic hardware. The proposed framework works in four steps. First, it analyzes a machine learning program and generates SNN workload using representative data. Second, it partitions the SNN workload and generates clusters that fit on crossbars of the target neuromorphic hardware. Third, it exploits the rich semantics of the Synchronous Dataflow Graph (SDFG) to represent a clustered SNN program, allowing for performance analysis in terms of key hardware constraints such as number of crossbars, dimension of each crossbar, buffer space on tiles, and tile communication bandwidth. Finally, it uses a novel scheduling algorithm to execute clusters on crossbars of the hardware, guaranteeing hardware performance. We evaluate DFSynthesizer with 10 commonly used machine learning programs. Our results demonstrate that DFSynthesizer provides a much tighter performance guarantee compared to current mapping approaches.

Computer Science↗
DOE OSTI2021

Design of a Robust Memristive Spiking Neuromorphic System with Unsupervised Learning in Hardware

Spiking neural networks (SNN) offer a power efficient, biologically plausible learning paradigm by encoding information into spikes. The discovery of the memristor has accelerated the progress of spiking neuromorphic systems, as the intrinsic plasticity of the device makes it an ideal candidate to mimic a biological synapse. Despite providing a nanoscale form factor, non-volatility, and low-power operation, memristors suffer from device-level non-idealities, which impact system-level performance. To address these issues, this article presents a memristive crossbar-based neuromorphic system using unsupervised learning with twin-memristor synapses, fully digital pulse width modulated spike-timing-dependent plasticity, and homeostasis neurons. Additionally, the implemented single-layer SNN was applied to a pattern-recognition task of classifying handwritten-digits. The performance of the system was analyzed by varying design parameters such as number of training epochs, neurons, and capacitors. Furthermore, the impact of memristor device non-idealities, such as device-switching mismatch, aging, failure, and process variations, were investigated and the resilience of the proposed system was demonstrated.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2025

Dendritic Computing with Multigate Ferroelectric Field-Effect Transistors

Although inspired by neuronal systems in the brain, artificial neural networks generally employ point-neurons, which offer computational complexity far less than that of their biological counterparts. Neurons have dendritic arbors that connect to different sets of synapses and offer local nonlinear accumulation – playing a pivotal role in processing and learning. Inspired by this, we propose a novel neuron design based on a multigate ferroelectric field-effect transistor that mimics dendrites. It leverages ferroelectric nonlinearity for local computations within dendritic branches while utilizing the transistor action to generate the neuronal output. The branched architecture enables smaller crossbar arrays in hardware integration, improving efficiency. Using an experimentally calibrated device-circuit-algorithm cosimulation framework, we demonstrate that networks incorporating our dendritic neurons achieve superior performance compared to much larger networks without dendrites (∼ 17× fewer trainable weight parameters). These findings suggest that dendritic hardware can significantly improve computational efficiency and learning capacity of neuromorphic systems optimized for edge applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

The organic redox transistor for neuromorphic computing

Inspired by the in-memory computing architectures of biological systems, neuromorphic computing using crossbar arrays of artificial synapses based on non-volatile memory (NVM) devices with variable conductances has emerged as a new paradigm to enable massively parallel and ultra-low power computing hardware for data centric applications. Although inference has been demonstrated successfully using crossbars based on a variety of NMV technologies, efficient learning and scaling to large arrays (>10 6 elements) remains a challenge due to the synaptic elements' non-ideal electrical characteristics which degrades ANN accuracy. A further challenge is that in the conductive state memristors draw large currents >μA resulting in significant voltage drops in the interconnect wires and increased probability of failure in scaled arrays. We suggest the organic polymer redox transistor (RT) is an alternate approach that could solve many of these challenges, enabling both inference and parallel outer product updates, as recently demonstrated by Fuller et al. An RT consists of redox-active channel and gate electrodes in contact with a liquid or solid electrolyte. lon insertion through the electrolyte controls the channel electronic conductivity, while electron transfer through an external circuit maintains overall charge neutrality. Unlike a rechargeable battery, in the RT the voltage built-up across the electrolyte is kept to a minimum (typically <100 mV) by using the same material for the gate and channel. Elimination of the voltage offset simplifies integration of the RT into programmable arrays by enabling the use of various selectors. RTs based on inorganic and organic materials have been recently demonstrated with conductance tuning occurring at potentials of just a few mV and hundreds to thousands of linearly and symmetrically programmable conductance states, enabling near ideal accuracy in neural network simulations. Introduced in the 1980's, redox transistors with metallic gate electrodes and organic channel materials, also known as organic electrochemical transistors (OECTs), have been explored for a variety of applications such as chem- and bio-sensing, neural interfaces, and low cost printed circuits. A typical channel material for OECTs is the conducting polymer poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS). PEDOT is a p-type semiconducting polymer with mobile positively charged polarons that hop chain-to-chain.

Talin, Albert Alec↗