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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Volumetric imaging of space debris using sun microsystem's TAAC-1 application accelerator board

Analysis of space debris requires the researcher to have a three-dimensional spatial framework and understanding. By using computers to image and display the space debris volumes, the researcher is provided with an added visual analysis tool. This paper describes volumetric visualization of space debris. Two imaging approaches are used. The first method visualizes the cube faces of the volumetric image. The second method uses a ray-tracing technique to display surfaces within the volume. Three examples of space debris volumes are described.

Luetkemeyer, Kelly G.↗
NASA NTRS2000

Smart Microsystems with Photonic Element and Their Applications to Aerospace Platforms

The need to make manufacturing, operation, and support of airborne vehicles safer and more efficient forces engineers and scientists to look for lighter, cheaper, more reliable technologies. Light weight, immunity to EMI, fire safety, high bandwidth, and high signal fidelity have already made photonics in general and fiber optics in particular an extremely attractive medium for communication purposes. With the fiber optics serving as a central nervous system of the vehicle, generation, detection, and processing of the signal occurs at the peripherals that include smart structures and devices. Due to their interdisciplinary nature, photonic technologies cover such diverse areas as optical sensors and actuators, embedded and distributed sensors, sensing schemes and architectures, harnesses and connectors, signal processing and algorithms. The paper includes a brief description of work in the photonic area that is going on at NASA, especially at the Glenn Research Center (GRC).

Adamovsky, G.↗
NASA NTRS2002

Glennan Microsystems Initiative

During the 2001-2002 award period, we performed research on Pt/Ti/bare 6H-SiC and bare 4H-SiC interfaces in order to identify their electronic properties as a function of surface preparation. The overall aim of this work is to optimize the electronic properties of metal contacts to SiC as well as the active SiC material itself as a function of surface preparation and subsequent processing. Initially, this work has involved identifying bare surface, subsurface, and metal induced gap states at the metal-SiC contact and correlating energies and densities of deep levels with Schottky barrier heights. We used low energy electron-excited nanoluminescence (LEEN) spectroscopy, X-ray photoemission spectroscopy (XPS), and Secondary Ion Mass Spectrometry (SIMS) in order to correlate electronic states and energy bands with chemical composition, bonding, and crystal structure. A major development has been the discovery of polytype transformations that occur in 4H-SiC under standard microelectronic process conditions used to fabricate SiC devices. Our results are consistent with the stacking fault generation, defect formation, and consequent degradation of SiC recently reported for state-of-the-art ABB commercial diodes under localized electrical stress. Our results highlight the importance of -optimizing process conditions and material properties - anneal times, temperatures and doping to control such structural changes within epitaxial SiC layers. Thus far, we have established threshold times and temperatures beyond which 4H-SiC exhibits 3C-SiC transformation bands for a subset of dopant concentrations and process conditions. On the basis of this temperature time behavior, we have been able to establish an activation energy of approximately 2.5 eV for polytype transformation and dislocation motion. Work continues to establish the fundamental mechanisms underlying the polytype changes and its dependence on material parameters.

Brillson, Leonard J.↗
NASA NTRS1999

Fourier-transform optical microsystems

The design, fabrication, and initial characterization of a miniature single-pass Fourier-transform spectrometer (FTS) that has an optical bench that measures 1 cm x 5 cm x 10 cm is presented. The FTS is predicated on the classic Michelson interferometer design with a moving mirror. Precision translation of the mirror is accomplished by microfabrication of dovetailed bearing surfaces along single-crystal planes in silicon. Although it is miniaturized, the FTS maintains a relatively high spectral resolution, 0.1 cm-1, with adequate optical throughput.

NASA Discipline Environmental Health↗
NASA NTRS1998

NASA Center for Integrated Space Microsystems

Develop and maintain a world class, leading edge capability in Advanced Avionic Systems and Advanced Microelectronics Technologies for future highly integrated, miniaturized, autonomous spacecraft systems for deep-space and Earth orbiting missions.

CISM Avionics Microelectronics Miniaturization Aut↗
NASA NTRS2009

VLSI Microsystem for Rapid Bioinformatic Pattern Recognition

A system comprising very-large-scale integrated (VLSI) circuits is being developed as a means of bioinformatics-oriented analysis and recognition of patterns of fluorescence generated in a microarray in an advanced, highly miniaturized, portable genetic-expression-assay instrument. Such an instrument implements an on-chip combination of polymerase chain reactions and electrochemical transduction for amplification and detection of deoxyribonucleic acid (DNA).

Fang, Wai-Chi↗
NASA NTRS2011

Biochip microsystem for bioinformatics recognition and analysis

A system with applications in pattern recognition, or classification, of DNA assay samples. Because DNA reference and sample material in wells of an assay may be caused to fluoresce depending upon dye added to the material, the resulting light may be imaged onto an embodiment comprising an array of photodetectors and an adaptive neural network, with applications to DNA analysis. Other embodiments are described and claimed.

Lue, Jaw-Chyng↗
NASA NTRS2024

Development of a High Frequency Class-A Amplifier for High Temperature Wireless Microsystems based on a Silicon Carbide Static Induction Transistor

Next generation gas turbine engine health monitoring for high performance jet engine-powered aircraft will incorporate integrated microelectronic sensors specifically designed to enhance aircraft functionality, engine efficiency, and safety. Temperature, air flow and pressure associated with the gas path as well as emissions from the engine correlate to the state of the combustor and other engine health conditions. Monitoring these parameters accurately requires positioning electronic sensors in the hot zone of the gas turbine engine, which exposes them to temperatures in excess of 400ºC. At these temperatures, signal amplification is needed at the transducer level to distinguish the desired measured signal from the significant electronic noise generated by the harsh environment. In this presentation, we report on the simulation, development, fabrication, and testing on a high temperature Class-A amplifier which utilizes a 4H-SiC Static Induction Transistor (SIT) as the active device and input/output matching and DC bias networks comprised of thin-film spiral inductors, metal-insulator-metal capacitors, and thick film chip resistors. A small signal model that emulates the operation of the 4H-SiC SIT from 25 to 400ºC, with an emphasis on operation at 400οC, was utilized. Measurements were performed from 25 to 400ºC to generate current-voltage curves, capacitive transistor characteristics and high frequency scattering parameters (S-parameters). The measured data was used to extrapolate the transconductance, gm, as a function of temperature for model development. Circuit simulation tools were used to generate S-parameters, which were compared to the measured values. At 400οC, a maximum difference between measured and simulated S-parameters for frequencies from 20 to 100 MHz were 3.84%, 0.68%, 10.61%, and 3.26% for S21, S12, S11, and S22, respectively. The average transit frequency, ft, was calculated from measured values to be 197.8 MHz, while the simulated value from the model was found to be 200 MHz. The Amplifier’s S-parameters were recorded at 20-100 MHz over a temperature range of 25-400ºC and show a gain of approximately 15.8 and 5.80 dBm at 25 and 400ºC, respectively. The input and output reflection coefficients at 50 MHz and 400ºC were -18.5 and -15.2 dB, respectively. The noise figure and phase noise were measured over the temperature range of 25-400ºC and recorded. The noise figure increased 21% at 50 MHz over the temperature range, while the 1 kHz offset of the phase noise remained below -110 dB. The stability factor, K, calculated with measured and simulated data demonstrates unconditional stability over the frequency range at 400ºC. Lastly, the 1-dB compression point was measured at 50 MHz and 400ºC with an approximated output of 9.5 dBm.

SiC↗
NASA NTRS2003

Microelectromechanical System (MEMS) Device Being Developed for Active Cooling and Temperature Control

High-capacity cooling options remain limited for many small-scale applications such as microelectronic components, miniature sensors, and microsystems. A microelectromechanical system (MEMS) using a Stirling thermodynamic cycle to provide cooling or heating directly to a thermally loaded surface is being developed at the NASA Glenn Research Center to meet this need. The device can be used strictly in the cooling mode or can be switched between cooling and heating modes in milliseconds for precise temperature control. Fabrication and assembly employ techniques routinely used in the semiconductor processing industry. Benefits of the MEMS cooler include scalability to fractions of a millimeter, modularity for increased capacity and staging to low temperatures, simple interfaces, limited failure modes, and minimal induced vibration. The MEMS cooler has potential applications across a broad range of industries such as the biomedical, computer, automotive, and aerospace industries. The basic capabilities it provides can be categorized into four key areas: 1) Extended environmental temperature range in harsh environments; 2) Lower operating temperatures for electronics and other components; 3) Precision spatial and temporal thermal control for temperature-sensitive devices; and 4) The enabling of microsystem devices that require active cooling and/or temperature control. The rapidly expanding capabilities of semiconductor processing in general, and microsystems packaging in particular, present a new opportunity to extend Stirling-cycle cooling to the MEMS domain. The comparatively high capacity and efficiency possible with a MEMS Stirling cooler provides a level of active cooling that is impossible at the microscale with current state-of-the-art techniques. The MEMS cooler technology builds on decades of research at Glenn on Stirling-cycle machines, and capitalizes on Glenn s emerging microsystems capabilities.

Beach, Duane E.↗