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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Three-Dimensional Microbatteries beyond Lithium Ion

Ubiquitous implementation of microelectronics in microelectromechanical systems requires stable power supplies and necessitates development of on-chip miniature power sources, such as microbatteries. However, conventional thin-film batteries exhibit limited surface area and sluggish diffusion kinetics with insufficient energy and power density. In contrast, three-dimensional (3D) beyond-lithium (sodium, zinc, aluminum, etc.) battery architectures can significantly enhance the areal energy and power and meanwhile maintain the low-cost mass production. Despite this, the future of beyond-lithium systems is being questioned as they each present shortcomings. In this Comment, we discuss scientific advancements in reaction kinetics control, electrochemical stability improvements, and reaction mechanism understandings in 3D beyond-lithium battery systems, and finally, call for intensive research effort to address the challenges and develop strategies that can pave the way toward their commercialization.

25 ENERGY STORAGE↗
DOE OSTI2021

Grain growth of nanocrystalline aluminum under tensile deformation: A combined in situ TEM and atomistic study

Nanocrystalline Al thin films have been strained in situ in a transmission electron microscope using two separate nanomechanical techniques involving a push-to-pull device and a microelectromechanical system (MEMS) device. Deformation-induced grain growth was observed to occur via stress-assisted grain boundary migration with extensive grain growth occurring in the necked region, indicating that the increase in local stress drives the boundary migration. Under applied tensile stresses close to the ultimate tensile strength of 450 MPa for a nanocrystalline Al specimen, measured boundary migration speeds are 0.2 – 0.7 nm s -1 for grains outside necked region and increases to 2.5 nm s -1 for grains within the necked region where the local estimated tensile stresses are elevated to around 630 MPa. By tracking grain boundary motion over time, molecular dynamics simulations showed qualitative agreement in terms of pronounced grain boundary migration with the experimental observations. The combined in situ observation and molecular dynamics simulation results underscore the important role of stress-driven grain growth in plastically deforming nanocrystalline metals, leading to intergranular fracture through predominant grain boundary sliding in regions with large localized deformation.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Optically read Coriolis vibratory gyroscope based on a silicon tuning fork

In this work, we describe the design, fabrication, and characterization of purely mechanical miniature resonating structures that exhibit gyroscopic performance comparable to that of more complex microelectromechanical systems. Compared to previous implementations of Coriolis vibratory gyroscopes, the present approach has the key advantage of using excitation and probing that do not require any on-chip electronics or electrical contacts near the resonating structure. More specifically, our design relies on differential optical readout, each channel of which is similar to the 'optical lever' readout used in atomic force microscopy. The piezoelectrically actuated stage provides highly efficient excitation of millimeter-scale tuning fork structures that were fabricated using widely available high-throughput wafer-level silicon processing. In our experiments, reproducible responses to rotational rates as low as 1.8 × 10 3° h –1 were demonstrated using a benchtop prototype without any additional processing of the raw signal. The noise-equivalent rate, ΩNER, derived from the Allan deviation plot, was found to be <0.5° h –1 for a time of 10 3 s. Despite the relatively low Q factors (<10 4 ) of the tuning fork structures operating under ambient pressure and temperature conditions, the measured performance was not limited by thermomechanical noise. In fact, the performance demonstrated in this proof-of-principle study is approximately four orders of magnitude away from the fundamental limit.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Predicting strength distributions of MEMS structures using flaw size and spatial density

The populations of flaws in individual layers of microelectromechanical systems (MEMS) structures are determined and verified using a combination of specialized specimen geometry, recent probabilistic analysis, and topographic mapping. Strength distributions of notched and tensile bar specimens are analyzed assuming a single flaw population set by fabrication and common to both specimen geometries. Both the average spatial density of flaws and the flaw size distribution are determined and used to generate quantitative visualizations of specimens. Scanning probe-based topographic measurements are used to verify the flaw spacings determined from strength tests and support the idea that grain boundary grooves on sidewalls control MEMS failure. The findings here suggest that strength controlling features in MEMS devices increase in separation, i.e., become less spatially dense, and decrease in size, i.e., become less potent flaws, as processing proceeds up through the layer stack. The method demonstrated for flaw population determination is directly applicable to strength prediction for MEMS reliability and design.

Instruments & Instrumentation↗
DOE OSTI2019

Rosette-scan video-rate atomic force microscopy: Trajectory patterning and control design

We introduce an analysis and a systematic design methodology for a novel nonraster scan method based on a rosette pattern and demonstrate its application in video-rate atomic force microscopy. This pattern is traced when the lateral axes of a parallel kinematic scanner are commanded to follow a combination of two sinusoids with identical amplitudes and different frequencies. We create an internal-model-based controller to enhance the tracking performance of this pattern and implement the scheme on a microelectromechanical system scanner. The conclusions reveal high-precision tracking of the rosette pattern in order to acquire time-lapsed atomic force microscope images at the rate of 10 frames/s.

42 ENGINEERING↗
DOE OSTI2021

High-throughput bend-strengths of ultra-small polysilicon MEMS components

The strength distribution of polysilicon bend specimens, approximately 10 μm in size, is measured using a high-throughput microelectromechanical system fabrication and testing method. The distribution is predicted from reference tests on tensile specimens and finite element analysis of the bend specimen geometry incorporated into a stochastic extreme-value strength framework. Agreement between experiment and prediction suggests that the ultra-small specimens may be at the limit of extreme-value scaling and contain only one strength-controlling flaw/specimen.

Cook, Robert F. (ORCID:0000000304228881)↗
DOE OSTI2024

Atom-resolved imaging with a silicon tip integrated into an on-chip scanning tunneling microscope

Limited throughput is a shortcoming of the Scanning Tunneling Microscope (STM), particularly when used for atomically precise lithography. To address this issue, we have developed an on-chip STM based on Microelectromechanical-Systems (MEMS) technology. The device reported here has one degree of freedom, replacing the Z axis in a conventional STM. The small footprint of the on-chip STM provides a great opportunity to increase STM throughput by incorporating a number of on-chip STMs in an array to realize parallel STM. The tip methodology adopted for the on-chip STM presented here, which is a batch-fabricated Si tip, makes our design conducive to this goal. In this work, we investigate the capability of this on-chip STM with an integrated Si tip for STM imaging. We integrate the on-chip STM into a commercial ultrahigh-vacuum STM system and perform imaging with atomic resolution on par with conventional STMs but at higher scan speeds due to the higher sensitivity of the MEMS actuator relative to a piezotube. The results attest that it is possible to achieve a parallel and high-throughput STM platform, which is a fully batch-fabricated MEMS STM nanopositioner capable of performing atomic-resolution STM imaging.

Instruments & Instrumentation↗
DOE OSTI2020

Interferometric measurements of graphene-based membranes for micromechanical applications

Recent studies on piezoelectricity in 2D materials, such as graphene, have revealed their potential in multiple applications including microelectromechanical systems. Herein, we reveal piezoelectricity in few-layer graphene sheets deposited on amorphous Si 3 N 4 membranes. The response in the center of square membrane of 6.7 × 6.7 mm 2 size reaches about 14 nm at resonance and could be further enhanced by adjusting the composite structure. Resonance piezoelectric phenomena are fully consistent with the earlier piezoresponse force microscopy observations on free-standing piezoelectric graphene and open up a possibility of using 2D materials in micromechanical applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Strain-tuning of domain walls in multilayer graphene probed in the quantum Hall regime

Domain walls, topological defects that define the frontier between regions of different stacking order in multilayer graphene, have proved to host exciting physics. The ability to tune these topological defects in situ in an electronic transport experiment brings a wealth of possibilities in terms of fundamental understanding of domain walls as well as for electronic applications. Here, we demonstrate, through a MEMS (microelectromechanical system) actuator and magnetoresistance measurements, the effect of domain walls in multilayer graphene quantum Hall effect. Reversible and controlled uniaxial strain triggers the topological defects, manifested as addtional quantum Hall effect plateaus as well as a discrete and reversible modulation of the current across the device. Furthermore, our findings are supported by theoretical calculations and constitute indication of the in situ tuning of topological defects in multilayer graphene probed through electronic transport, opening the way for the use of reversible topological defects in electronic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Iterative Learning Control for High-Speed Rosette Trajectory Tracking

We demonstrate high-speed tracking of a selfrepeating non-raster scan AFM pattern known as rosette. To generate this pattern, the lateral axes of the scanner trace a sum of two sinusoids with different frequencies but identical amplitudes. A feedback controller is combined with an iterative learning controller (ILC) to track this repetitive pattern. The feedback controller is designed based on the internal model principle and incorporates the fundamental reference frequencies. The ILC eliminates the repeating deterministic disturbances that appear in the tracking error. To verify the efficacy of the control approach, an experiment is conducted using a two degrees-of-freedom microelectromechanical system nanopositioner to track a rosette pattern sequentially at the rate= of five frames per second. The experimental results show that the root-mean-square value of tracking error has been reduced by more than 50% owing to the ILC

42 ENGINEERING↗
DOE OSTI2019

AlN/SiC MEMS for High-Temperature Applications

The creation of microelectromechanical systems (MEMS) that can operate through elevated temperatures would enable systems diagnostics and controls that are not possible with conventional-off-the-shelf components. The integration of silicon carbide (SiC) with aluminum nitride (AlN) has led to the fabrication of devices that can withstand elevated temperature anneals >935 °C. The results from a piezoelectric micromachined ultrasonic transducer (PMUT) and a microresonator are reported as demonstrations of the fabrication process. Testing the PMUT response before and after annealing at 935 °C led to a change in resonant frequency of less than 1%, which is attributable to a shift in film stress. The response of the microresonator was RF tested in situ up to 500 °C and showed no degradation in its electromechanical coupling coefficient. The resonant frequency decreased with temperature due to the temperature coefficient of Young's modulus, and the quality factor decreased with temperature and remained unrecoverable upon cooling. The degradation in the quality factor is suspected to be a result of oxidation of the titatium nitride (TiN) top electrode, which increases the resistivity and leads to an unrecoverable reduction in the quality factor. As a result, the robust piezoelectric response of AlN at these temperatures show that AlN is a very promising candidate for elevated temperature applications. [2019-0019]

42 ENGINEERING↗
DOE OSTI2022

Fabrication of Polymer Membrane-Suspended Microstructures on Printed Circuit Boards

When microelectromechanical systems are manufactured in high densities, the necessary routing layer structures can become complex and thus expensive if executed in silicon technology. If, additionally, the microstructures are also to be fabricated suspended on membranes, complex thinning processes become necessary to form these often rather fragile membranes. Here, a novel fabrication concept is demonstrated that allows for the fabrication of membrane-suspended microstructures using standard microfabrication techniques directly integrated with printed circuit boards (PCB) by laminating polyimide (PI) films over cavities in the PCB. This results in cost-effective routing layer fabrication and direct compatibility with common electronic component standards such as SMT (surface-mount technology) and THT (through-hole technology). To illustrate the capabilities of the fabrication process, we fabricated an array of membrane suspended microheaters. Individual platinum microheater elements are suspended on PI membranes that are 25 μm thick and 500 μm in diameter. The fabricated PCB carries a 10x10 array of suspended microheaters on an area of 26,mm x 26,mm. Here, the characterization of the microheater array shows that a yield of 86% functional microheaters was achieved. An individual microheater shows an almost linear heating characteristic at least up to 200°C demonstrating the viability of the technique for creating functional membrane-suspended microstructures on a PCB. [2021-0226]

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials

Chalcogenide Phase Change Materials (PCM) and metal insulator transition (MIT) materials are a group of materials that are capable of switching between low resistance and high resistance states. These emerging materials have been widely used in optical storage media and memory devices. Over the past recent years, there have been interests in exploiting the PCM and MIT materials, especially germanium antimony telluride (GST) alloys and vanadium dioxide (VO 2 ), for radio frequency (RF) applications. The PCM and MIT-based RF devices are expected to bridge the gap between semiconductor switches and microelectromechanical system (MEMS) switches as they combine the low insertion loss performance of MEMS technology and the small size and reliability performance of semiconductor technology. This article presents an overview of the PCM and MIT materials for RF circuits and discusses the recent advancements in reconfigurable millimeter-wave (mmWave) devices based on PCM and MIT materials in depth.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Design and Characterization of a MEMS Probe Scanner for On-chip Atomic Force Microscopy

This paper presents the design and characterization of a microelectromechanical systems (MEMS)-based probe scanner proposed to function as an on-chip atomic force microscope (AFM). The device comprises an in-plane stage with electrostatic actuators and electrothermal displacement sensors. The stage is able to precisely position an AFM probe over a sample to perform tapping-mode AFM imaging. For implementation, a standard silicon-on-insulator (SOI) microfabrication process is used. In a previously reported design, the embedded AFM probe featured only one piezoelectric transducer for simultaneous actuation and sensing, making its use in imaging problematic. To address this issue, the new design features separate actuation and sensing AlN piezoelectric transducers. An extra electrode is also incorporated on the probe that enables canceling the electrical feedthrough from the actuation to sensing. To accommodate the extra signal routing paths, mechanical design of the probe scanner is modified. Device characterization reveals an in-plane displacement range of 8 µm×7 µm with a bandwidth of up to 2.7 kHz. The frequencydomain behavior of the AFM probe is also studied and feedthrough cancellation is performed at the resonant frequency of 127.35 kHz.

42 ENGINEERING↗
DOE OSTI2020

Piezoelectric Actuation of Graphene-Coated Polar Structures

Ferroelectric materials based on lead zirconate titanate (PZT) are widely used as sensors and actuators because of their strong piezoelectric activity. However, their application is limited because of the high processing temperature, brittleness, lack of conformal deposition, and a limited possibility to be integrated with the microelectromechanical systems (MEMS). Recent studies on the piezoelectricity in the 2-D materials have demonstrated their potential in these applications, essentially due to their flexibility and integrability with the MEMS. In this work, we deposited a few layer graphene (FLG) on the amorphous oxidized Si 3 N 4 membranes and studied their piezoelectric response by sensitive laser interferometry and rigorous finite-element modeling (FEM) analysis. Modal analysis by FEM and comparison with the experimental results show that the driving force for the piezoelectric-like response can be a polar interface layer formed between the residual oxygen in Si 3 N 4 and the FLG. The response was about 14 nm/V at resonance and could be further enhanced by adjusting the geometry of the device. These phenomena are fully consistent with the earlier piezoresponse force microscopy (PFM) observations of the piezoelectricity of the graphene on SiO 2 and open up an avenue for using graphene-coated structures in the MEMS.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Fabrication of ultrathin suspended membranes from atomic layer deposition films

In this report, ultrathin films suspended as freestanding membranes are critical to many microelectronic and materials science applications. However, fabrication methods are currently limited in either their flexibility, due to material selectivity issues during the final membrane release, or their scalability. Here, we demonstrate a novel fabrication process for suspending ultrathin films with thicknesses as low as 4 nm and lateral dimensions up to 20 x 1000 μm from a variety of materials grown by atomic layer deposition. A silicon nitride membrane serves as the support for a sacrificial polymer layer and an ultrathin atomic layer deposition film which, after plasma etching, will form the membrane. The high chemical selectivity between atomic layer deposition-grown transition metal nitrides and oxides and the sacrificial polymer means that ultrathin films of a variety of materials can be released without damage using a single process. Electrically conductive titanium nitride membranes can be produced by this method and are of significant interest for electron microscopy applications. Electron transparency of titanium nitride membranes was found to be ~14% higher than silicon nitride of the same thickness, and of similar conductivity to graphite, meaning that ultrathin, conductive, and electron transparent membranes can be fabricated at scale. These membranes are ideal supports for electron and photon characterization techniques, as well as microelectromechanical system applications that require a conductive membrane.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Atomic-resolution lithography with an on-chip scanning tunneling microscope

In this work, atomic-resolution lithography with a Microelectromechanical-System (MEMS) based Scanning Tunneling Microscope (STM) is demonstrated for the first time. The microscope consists of a commercial UltraHigh-Vacuum (UHV) STM whose regular tip is replaced with a 1-Degree-of-Freedom (1-DOF) MEMS nanopositioner. This results in a hybrid STM system where XY-plane motions are provided by the piezotube of the original system and Z-axis motion by the MEMS with a higher bandwidth. Sharp tips made of Pt or W are added to the MEMS devices with postfabrication techniques. With this hybrid system, STM-based lithography is demonstrated on an H-passivated Si (100)-2×1 sample under UHV condition. Results prove the capability of the hybrid STM system for atomic-scale lithography. This capability, paired with the small footprint of the MEMS device, makes this approach a candidate for building a high-throughput parallel STM lithography platform by incorporating an array of 1-DOF MEMS devices that perform lithography in parallel.

Alipour, Afshin (ORCID:0000000263252067)↗
DOE OSTI2024

Zone plate-based extreme ultraviolet mask microscope with through-pellicle imaging capability

Mirror-based and zone plate-based imaging systems are being used in actinic extreme ultraviolet (EUV) reticle review tools. With regard to zone plates, a short working distance is advantageous in terms of the required spectral bandwidth, manufacturability, and potential throughput and imaging performance. Zone plates therefore typically have a short working distance. The industry has adopted the use of an EUV pellicle to protect the photomask. Imaging photomask through-pellicle requires a working distance larger than 2.5 mm. A zone-plate-based EUV mask microscope with a 3-mm working distance has been commissioned at beamline 11.3.2 of the Advanced Light Source. Through-pellicle imaging at an exposure time of 2 s is demonstrated. The instrument achieves an image contrast of 95% on large features on a photomask with a tantalum-based absorber. Imaging down to 45-nm half pitch (mask scale) is demonstrated. A NILS of 2.55 is achieved on 60-nm half-pitch (mask scale) lines and spaces. These results demonstrate that zone-plate-based imaging systems can meet the requirements of an actinic EUV mask review tool in terms of imaging performance and throughput in an instrument compatible with EUV pellicles.

Extreme ultraviolet↗