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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Combinatorial Deposition of Ultrathick Ta-W-Au-Bi High-Entropy Alloys for Next-Generation Hohlraums by Direct-Current Magnetron Sputtering

Hohlraum temperature calculations with the model by J. H. Hammer and M. D. Rosen predict a higher X-ray drive from Ta-W-Au-Bi high-entropy alloys compared to pure Au and recently developed Ta 4 Au and Au-Bi hohlraums. Here, we study the microstructure and properties of 25-75−µm-thick Ta-W-Au-Bi alloy films deposited via combinatorial direct-current magnetron sputtering. All of the films have promising physical properties, including high electrical resistivity, that satisfy the requirements for magnetically assisted inertial confinement fusion experiments. While porosity tends to increase with increasing Bi content, we also found that films with Bi content > 44 at. % exhibited densification close to the substrate/film interface and formed a single-phase alloy. In conclusion, these findings provide a potential path forward for the development of Ta-W-Au-Bi alloys for next-generation hohlraum materials.

Magnetron sputtering↗
DOE OSTI2026

Combinatorial deposition of Au–Bi alloys via high-rate magnetron sputtering

Gold–bismuth (Au–Bi) alloy films are promising candidate materials for inertial confinement fusion (ICF) hohlraums due to their high laser-to-x-ray conversion efficiency, particularly compared with Au, Ta–Au, and Bi hohlraums. However, the fabrication of uniform and dense Au–Bi alloy films remains a challenge. Here, we use a combination of Monte-Carlo modeling and experiments to demonstrate that the microstructure and properties of Au–Bi alloy films can be greatly improved when direct-current magnetron sputtering with high deposition rates of ⩾5 μm h -1 is used. Resultant films are ~90% of their maximum theoretical densities and have low O content of <1 at.%. Films with Bi content above 40 at. % exhibit high electrical resistivity >100μΩ cm, making them suitable for both magnetized and non-magnetized ICF schemes.

Materials science↗
NASA NTRS1983

Influence of the microstructure on the corrosion behavior of magnetron sputter-quenched amorphous metallic alloys

The microstructure and corrosion behavior of magnetron sputter deposited amorphous metallic films of (Mo6ORu40)82B18 under varying sputtering atmospheres have been investigated. The microstructural details and topology of the films have been studied by scanning electron microscopy and correlated with the deposition conditions. By reducing the pressure of pure argon gas, the characteristic features of rough surface and columnar growth full of vertical voids can be converted into a mirror-smooth finish with very dense deposits. Films deposited in the presence of O2 or N2 exhibit columnar structure with vertical voids. Film deposited in pure argon at low pressure show remarkably high corrosion resistance due to the formation of a uniform passive surface layer. The influence of the microstructure and surface texture on the corrosion behavior is discussed.

Thakoor, A. P.↗
NASA NTRS1985

Magnetron-Sputtered Amorphous Metallic Coatings

Amorphous coatings of refractory metal/metalloid-based alloys deposited by magnetron sputtering provide extraordinary hardness and wear resistance. Sputtering target fabricated by thoroughly mixing powders of tungsten, rhenium, and boron in stated proportions and pressing at 1,200 degrees C and 3,000 lb/in. to second power (21 MPa). Substrate lightly etched by sputtering before deposition, then maintained at bias of - 500 V during initial stages of film growth while target material sputtered onto it. Argon gas at pressure used as carrier gas for sputter deposition. Coatings dense, pinhole-free, extremely smooth, and significantly resistant to chemical corrosion in acidic and neutral aqueous environments.

Thakoor, A. P.↗
NASA NTRS1984

Corrosion behavior of magnetron sputter-deposited (Mo/0.6/Ru/0.4/)82B18 and Mo82B18 amorphous metal films

Amorphous metallic films of Mo49Ru33B18 and Mo82B18 have been prepared by magnetron sputtering, and their corrosion behavior was investigated and compared with amorphous liquid-quenched Mo49Ru33B18 and crystalline Mo i acidic and basic solutions. Sputtered Mo49Ru33B18 showed lower corrosion rates compared with liquid-quenched Mo49Ru33B18, owing to the superior surface smoothness and uniformity of the former. Amorphous Mo82B18 showed low corrosion rates in both acidic and basic aqueous solutions. Comparison of the corrosion properties of Mo49Ru33B18 with Mo82B18 and Mo demonstrates the roles of the alloys' constituents. Ru significantly extends the passive region to high-anodic potentials, but, at less-anodic potentials, Mo82B18 has the lowest corrosion rate.

Williams, R. M.↗
NASA NTRS1986

Highly conducting ZnSe films by reactive magnetron sputtering

This paper presents the results of an effort to deposit high-conductivity ZnSe on glass and conducting SnO2-coated glass substrates by reactive magnetron sputter deposition, using pure metal sputter targets of Zn and dopants such as In, Ga, and Al. Clear yellow ZnSe films were successfully obtained. By using substrate temperatures as low as 150 C, cosputtered dopants, and sputter parameters and H2Se injection rates which maximize the Zn-to-Se ratio in the films, ZnSe bulk resistivities have been lowered by up to seven orders of magnitude, reaching values as low as 20 ohm cm. The most effective dopant to data has been In, cosputtered with Zn in amounts leading to In atomic concentrations as high as 1.4 percent. Atomic-absorption measurements show an average 49.9/48.9 ratio of Zn to Se.

Nouhi, A.↗
NASA NTRS1988

Deposition of vanadium oxide films by direct-current magnetron reactive sputtering

It is demonstrated here that thin films of vanadium oxide can be deposited at modest substrate temperatures by dc reactive sputtering from a vanadium target in an O2-Ar working gas using a planar magnetron source. Resistivity ratios of about 5000 are found between a semiconductor phase with a resistivity of about 5 Ohm cm and a metallic phase with a resistivity of about 0.001 Ohm cm for films deposited onto borosilicate glass substrates at about 400 C. X-ray diffraction shows the films to be single-phase VO2 with a monoclinic structure. The VO2 films are obtained for a narrow range of O2 injection rates which correspond to conditions where cathode poisoning is just starting to occur.

Kusano, E.↗
NASA NTRS1988

Direct-current magnetron fabrication of indium tin oxide/InP solar cells

Efficient solar cells of indium tin oxide (ITO)/InP have been fabricated using dc magnetron deposition of the ITO into single-crystal InP substrates. Efficiencies of over 16.5 percent have been achieved, the highest ever recorded for devices of this construction. The results of studies of the annealing behavior of the cells and observations of interfacial changes using Raman spectroscopy and secondary ion mass spectroscopy, together with measurements of light and dark current/voltage and quantum efficiency characteristics, are used to model the behavior of the cells and explain their lack of sensitivity to fabrication conditions.

Coutts, T. J.↗
NASA NTRS1988

Hybrid solar cells based on dc magnetron sputtered films of n-ITO on APMOVPE grown p-InP

Hybrid indium-tin-oxide (ITO)/InP solar cells are discussed. The cells are constructed by dc magnetron sputter deposition of ITO onto high-quality InP films grown by atmospheric pressure metal-organic vapor-phase epitaxy (APMOVPE). A record efficiency of 18.9 percent, measured under standard Solar Energy Research Institute reporting conditions, has been obtained. The p-InP surface is shown to be type converted, principally by the ITO, but with the extent of conversion being modified by the nature of the sputtering gas. The deposition process, in itself, is not responsible for the type conversion. Dark currents have been suppressed by more than three orders of magnitude by the addition of hydrogen to the sputtering gas during deposition of a thin (5 nm) interface layer. Without this layer, and using only the more usual argon/oxygen mixture, the devices had poorer efficiencies and were unstable. A discussion of associated quantum efficiencies and capacitance/voltage measurements is also presented from which it is concluded that further improvements in efficiency will result from better control over the type-conversion process.

Coutts, T. J.↗
NASA NTRS1991

Multi-cathode unbalanced magnetron sputtering systems

Ion bombardment of a growing film during deposition is necessary in many instances to ensure a fully dense coating, particularly for hard coatings. Until the recent advent of unbalanced magnetron (UBM) cathodes, reactive sputtering had not been able to achieve the same degree of ion bombardment as other physical vapor deposition processes. The amount of ion bombardment of the substrate depends on the plasma density at the substrate, and in a UBM system the amount of bombardment will depend on the degree of unbalance of the cathode. In multi-cathode systems, the magnetic fields between the cathodes must be linked to confine the fast electrons that collide with the gas atoms. Any break in this linkage results in electrons being lost and a low plasma density. Modeling of the magnetic fields in a UBM cathode using a finite element analysis program has provided great insight into the interaction between the magnetic fields in multi-cathode systems. Large multi-cathode systems will require very strong magnets or many cathodes in order to maintain the magnetic field strength needed to achieve a high plasma density. Electromagnets offer the possibility of independent control of the plasma density. Such a system would be a large-scale version of an ion beam enhanced deposition (IBED) system, but, for the UBM system where the plasma would completely surround the substrate, the acronym IBED might now stand for Ion Blanket Enhanced Deposition.

Sproul, William D.↗