Magnetization reversal induced by antiphase domain boundaries in Ni 2 Mn Z Heusler compounds
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75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
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Results for “magnetization reversal”
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Spintronics Meets Density Matrix Renormalization Group: Quantum Spin-Torque-Driven Nonclassical Magnetization Reversal and Dynamical Buildup of Long-Range Entanglement
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75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Structural role in temperature-induced magnetization reversal revealed in distorted perovskite G d 1 – x Y x Cr O 3
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Jain, Pooja (ORCID:0000000239779854)↗
Probing antiferromagnetic coupling in magnetic insulator/metal heterostructures
Using depth- and element-resolved characterization, we report insights into antiferromagnetic coupling in Y 3 Fe 5 O 12 /permalloy (YIG/Py) and Y 3 Fe 5 O 12 /Co (YIG/Co) thin-film heterostructures grown on Si/SiO 2 and Gd 3 Ga 5 O 12 substrates. We build on recent work demonstrating antiferromagnetic coupling in polycrystalline YIG/metallic-ferromagnetic systems by characterizing differences in the structural and magnetic properties which depend on the choice of ferromagnet (Py vs Co), seed layer (with and without Pt), and substrate (Si/SiO 2 vs Gd 3 Ga 5 O 12 ). These differences in the sample structure manifest as notable changes in interface coupling sign, magnetic reversal mechanisms, magnetic depth profiles, and domain structure. Through a combination of magnetometry, polarized neutron reflectometry, and x-ray photoemission electron microscopy, a comprehensive picture of the magnetic interactions is realized, with lateral- and depth resolution at submicrometer and nanometer scales, respectively. These results confirm that both Co and Py share a preference to align antiparallel to polycrystalline YIG grown on some substrates (Si/SiO 2 and Si/SiO 2 /Pt), while coupling ferromagnetically with highly oriented YIG on (111) Gd 3 Ga 5 O 12 and (110) Gd 3 Ga 5 O 12 /Pt substrates. The complex interplay among magnetic interactions at the YIG/ferromagnetic interface has important implications for spintronic and magnonic devices based on this platform.
Exchange interaction↗
Sign reversal in magnetic field amplification by relativistic laser-driven microtube implosions
In this work, we demonstrate and explain the surprising phenomenon of sign reversal in magnetic field amplification by the laser-driven implosion of a structured target. Relativistically intense laser pulses incident on the outer surface of a microtube target consisting of a thin opaque shell surrounding a μm-scale cylindrical void drive an initial ion implosion and later explosion capable of generating and subsequently amplifying strong magnetic fields. While the magnetic field generation is enhanced and spatially smoothed by the application of a kilotesla-level seed field, the sign of the generated field does not always follow the sign of the seed field. One unexpected consequence of the amplification process is a reversal in the sign of the amplified magnetic field when, for example, the target outer cross section is changed from square to circular. Using 2D particle-in-cell simulations, we demonstrate that sign reversal is linked to the stability of the surface magnetic field of opposite sign from the seed, which arises at the target inner surface during laser irradiation. The stability of the surface magnetic field and, consequently, the sign of the final amplified field depend sensitively on the target, laser, and seed magnetic field conditions, which could be leveraged to make laser-driven microtube implosions an attractive platform for the study of magnetic fields in high energy density plasma in regimes where sign reversal either is or is not desired.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Interfacial Exchange Phenomena Driven by Ferromagnetic Domains
Abstract Interfacial proximity effects in antiferromagnetic/ferromagnetic (AFM/FM) bilayers control the exchange‐bias (EB) phenomena exploited in most spintronic devices, although still is lack of full understanding. Discordant results, including different exchange‐bias field ( H E ), coercivity ( H C ), or blocking temperature ( T B ) found even in similar systems, are usually ascribed to uncontrolled parameters, namely dissimilar interfacial defects, structure, and thicknesses. Here, it is shown in the very same sample that the magnetic domain structure during the magnetization reversal of the FM layer controls those mentioned effects. Simultaneous transport and vectorial‐resolved magnetic measurements performed in a V 2 O 3 /Co system during warming after different field cooling (FC) procedures exhibit a strong dependence on the FC angle and the domain structure of the FM layer. Remarkably, magnetization reversal analysis reveals 35 K of variation in T B and up to a factor of two in H E . These observations can be explained within the random‐field model for the interfacial exchange coupling with a fixed AFM domain structure in contact with a variable (angle‐dependent) FM domain structure. The results highlight the importance of the domain structure and magnetization reversal of the FM layer (not previously considered) in the EB phenomena, with potential to tailor interfacial effects in future spintronic devices.
36 MATERIALS SCIENCE↗
Chirality reversal of magnetic solitons in chiral Cr 1/3 TaS 2
Ferromagnetism in two-dimensional (2D) materials provides an ideal platform to study emergent electromagnetic phenomena in low dimensions for future spintronics. In magnetic-element intercalated transition metal dichalcogenides, topologically nontrivial spin textures, such as chiral helimagnetic spin states and chiral soliton lattices, are realized due to the chiral lattice distortions induced by intercalated magnetic ions. Consequently, the magnetic chirality is predictably determined by the sign of antisymmetric exchange interaction (or Dzyaloshinskii–Moriya interaction, DMI) vector that is coupled to the underlying crystal chirality. Here, using cryogenic Lorentz phase microscopy, we directly observed the chirality reversal behavior of the chiral soliton lattices in Cr 1/3 TaS 2 across the structural defects. We show that a partial 1 T stacking in 2H-TaS 2 locally reduces DMI, leading to magnetic chirality reversal with direct atomic resolution imaging. Furthermore, our experimental results show that manipulation of stacking sequence provides a viable way to control the chirality of topologically nontrivial soliton lattices in 2D magnets.
2D materials↗
In situ observation of the magnetization configuration and reversal in cylindrical nanowires
Curvilinear magnetic structures often have unique magnetic behavior compared to their rectilinear counterparts. This is due to the unique curvilinear boundary conditions as well as the curvature induced Dzyaloshinskii–Moriya-like interaction and the curvature induced anisotropy. The effects of a curvilinear geometry are best studied in 3D structures, where the curvature can have a significant spatial extent. Of these 3D structures, the simplest structure to study is the cylindrical nanowire. Here, we have simulated the magnetization reversal in cylindrical NiFe nanowires and present in situ Lorentz TEM images to support the findings of the simulations. We studied the domain formation and reversal of nanowires with two distinct diameters that give rise to a different reversal behavior. We have, thus, found that the zero-field magnetization configuration in these wires can take on a double helix type of configuration. The reversal in these structures then proceeds through the winding and unwinding of these helical configurations rather than through domain wall propagation.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Behavior of thermally quenched topological defects in quasicrystal artificial spin ices
We report that understanding the formation of topological defects in connected magnetic nanowires such as in artificial spin ices (ASIs) is critical to controlling their behavior. Moreover, emergent frustration behavior of these defects can be expected due to complex underlying lattice geometry of the ASIs. We have explored in situ thermalization and quenching of quasicrystalline ASIs, which exhibit additional frustration due to aperiodicity from near the Curie temperature, and we observe the formation of two sets of topological vortex defects: within the magnetic bars and within the vertices at which the bars meet. By varying the laser fluence, we show that the number of defects in the vertices varies as the quenching rate changes following a power law relation, which we interpret as being related to the ferromagnetic-to-paramagnetic phase transition. Conversely, the defects formed within the bars are metastable states related to the spontaneous magnetization reversal of the magnetic bars and are therefore strongly dependent on underlying lattice geometry. These results provide insight into the emergence and control of topological defects in confined frustrated magnetic systems.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Quantized resistance revealed at the criticality of the quantum anomalous Hall phase transitions
In multilayered magnetic topological insulator structures, magnetization reversal processes can drive topological phase transitions between quantum anomalous Hall, axion insulator, and normal insulator states. Here we report an examination of the critical behavior of two such transitions: the quantum anomalous Hall to normal insulator (QAH-NI), and quantum anomalous Hall to axion insulator (QAH-AXI) transitions. By introducing a new analysis protocol wherein temperature dependent variations in the magnetic coercivity are accounted for, the critical behavior of the QAH-NI and QAH-AXI transitions are evaluated over a wide range of temperature and magnetic field. Despite the uniqueness of these different transitions, quantized longitudinal resistance and Hall conductance are observed at criticality in both cases. Furthermore, critical exponents were extracted for QAH-AXI transitions occurring at magnetization reversals of two different magnetic layers. The observation of consistent critical exponents and resistances in each case, independent of the magnetic layer details, demonstrates critical behaviors in quantum anomalous Hall transitions to be of electronic rather than magnetic origin. Our finding offers a new avenue for studies of phase transition and criticality in QAH insulators.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Electric‐Field‐Driven Reversal of Ferromagnetism in (110)‐Oriented, Single Phase, Multiferroic Co‐Substituted BiFeO 3 Thin Films
Abstract While multiferroic materials are attractive systems for the promise of ultra‐low‐power‐consumption computational technologies, electric‐field‐induced magnetization reversal is a key challenge for realizing devices at scale. Though significant research efforts have been working toward the realization of a material which couples ferroelectricity and ferromagnetism, there are few, even composite, systems which are practical for device scale applications at room temperature. Co‐substituted multiferroic BiFe 0.9 Co 0.1 O 3 is a promising candidate system, due to coupled ferroelectricity and weak ferromagnetism at room temperature. Here, it is theoretically indicated that the ferroic orders in this material are statically coupled, where an in‐plane 109° ferroelectric switching event can result in the reversal of this out‐of‐plane component of magnetization, and the electric field‐induced magnetization reversal is experimentally observed. Such an in‐plane poling configuration is particularly desirable for device applications.
Chemistry↗
3D Nanomagnetism in Low Density Interconnected Nanowire Networks
Free-standing, interconnected metallic nanowire networks with densities as low as 40 mg/cm 3 have been achieved over centimeter-scale areas, using electrodeposition into polycarbonate membranes that have been ion-tracked at multiple angles. Networks of interconnected magnetic nanowires further provide an exciting platform to explore 3-dimensional nanomagnetism, where their structure, topology, and frustration may be used as additional degrees of freedom to tailor the materials properties. New magnetization reversal mechanisms in cobalt networks are captured by the first-order reversal curve method, which demonstrate the evolution from strong demagnetizing dipolar interactions to intersection-mediated domain wall pinning and propagation, and eventually to shape-anisotropy dominated magnetization reversal. These findings open up new possibilities for 3-dimensional integrated magnetic devices for memory, complex computation, and neuromorphics.
36 MATERIALS SCIENCE↗
Collective Ferromagnetism of Artificial Square Spin Ice
In this work, we study the temperature and magnetic field dependence of the total magnetic moment of large-area permalloy artificial square spin ice arrays. The temperature dependence and hysteresis behavior are consistent with the coherent magnetization reversal expected in the Stoner-Wohlfarth model, with clear deviations due to interisland interactions at small lattice spacing. Through micromagnetic simulations, we explore this behavior and demonstrate that the deviations result from increasingly complex magnetization reversal at small lattice spacing, induced by interisland interactions, and depending critically on details of the island shapes. These results establish new means to tune the physical properties of artificial spin ice structures and other interacting nanomagnet systems, such as patterned magnetic media.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Magnetic properties of CrX 3 (X = Cl, Br, I) monolayers in excited states
The presence of intrinsic ferromagnetism in a new class of magnetic semiconductors CrX 3 (X = Cl, Br, I) in a reduced dimension is associated with magnetic anisotropy energy (MAE). MAE is relevant for the magnetic order of CrX 3 . The control of magnetism in such 2D materials through external stimuli is gaining importance in view of potential technological applications. Here, we use all-electron density functional theory to investigate the magnetism of monolayers of chromium halides in excited states using a cluster model. We study the magnetization reversal barrier for two types of electronic singly excited states: (a) spin-preserving transitions, and (b) spin-flip transitions. While all the three halides show enhancement of MAE in excited states, the MAEs are significant for CrI 3 due to the large spin–orbit coupling in the iodines. The changes in the MAE in the excited state are influenced by the local charge distribution surrounding the iodine atoms. Using a model system, we also show that the MAE in chromium tri-iodides is strongly influenced by the charge transfer to the iodines in an excited state. Furthermore, controlling the charge transfer to the iodines can potentially be used to control the magnetization reversal barrier.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Concurrence of quantum anomalous Hall and topological Hall effects in magnetic topological insulator sandwich heterostructures
The quantum anomalous Hall (QAH) effect is a consequence of non-zero Berry curvature in momentum space. The QAH insulator harbours dissipation-free chiral edge states in the absence of an external magnetic field. Yet, the topological Hall (TH) effect, a hallmark of chiral spin textures, is a consequence of real-space Berry curvature. Herein, by inserting a topological insulator (TI) layer between two magnetic TI layers, we realized the concurrence of the TH effect and the QAH effect through electric-field gating. The TH effect is probed by bulk carriers, whereas the QAH effect is characterized by chiral edge states. The appearance of the TH effect in the QAH insulating regime is a consequence of chiral magnetic domain walls that result from the gate-induced Dzyaloshinskii–Moriya interaction and occurs during the magnetization reversal process in the magnetic TI sandwich samples. The coexistence of chiral edge states and chiral spin textures provides a platform for proof-of-concept dis- sipationless spin-textured spintronic applications.
36 MATERIALS SCIENCE↗
Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin-orbit torque
Here the electrical manipulation of magnetization and exchange bias in antiferromagnet/ferromagnet thin films could be of use in the development of the next generation of spintronic devices. Current-controlled magnetization switching can be driven by spin-orbit torques generated in an adjacent heavy metal layer, but these structures are difficult to integrate with exchange bias switching and tunnelling magnetoresistance measurements. Here, we report the current-induced switching of the exchange bias field in a perpendicularly magnetized IrMn/CoFeB bilayer structure using a spin-orbit torque generated in the antiferromagnetic IrMn layer. By manipulating the current direction and amplitude, independent and repeatable switching of the magnetization and exchange bias field below the blocking temperature can be achieved. The critical current density for the exchange bias switching is found to be larger than that for CoFeB magnetization reversal. X-ray magnetic circular dichroism, polarized neutron reflectometry measurements and micromagnetic simulations show that a small net magnetization within the IrMn interface plays a crucial role in these phenomena.
42 ENGINEERING↗